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Product Description
SGA-6589Z Pb
RoHS Compliant
& Green Package
The SGA-6589 is a high performance SiGe HBT MMIC DC-3500 MHz, Cascadable
Amplifier. A Darlington configuration featuring 1 micron
emitters provides high F T and excellent thermal
SiGe HBT MMIC Amplifier
perfomance. The heterojunction increases breakdown
voltage and minimizes leakage current between junc-
tions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation prod-
ucts. Only 2 DC-blocking capacitors, a bias resistor and
an optional RF choke are required for operation.
IRL
Gain (dB)
ORL
16 -20 Applications
8 -30 • PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
0 -40
0 1 2 3 4 5
• IF Amplifier
Frequency (GHz)
• Wireless Data, Satellite
Preliminary
22
35
P1dB (dBm)
OIP3 (dBm)
20
30
18
25
16
TL=+25ºC TL=+25ºC
20 14
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
Frequency (GHz) Frequency (GHz)
Preliminary
|S | vs. Frequency
21
|S | vs. Frequency
11
VD= 4.9 V, ID= 80mA VD= 4.9 V, ID= 80 mA
32 0
24 -10
|S21| (dB)
|S11| (dB)
16 -20
8 -30
+25°C +25°C
TL -40°C TL -40°C
+85°C +85°C
0 -40
0 1 2 3 4 5 6 0 1 2 3 4 5 6
Frequency (GHz) Frequency (GHz)
|S | vs. Frequency
12
|S | vs. Frequency
22
VD= 4.9 V, ID= 80 mA VD= 4.9 V, ID= 80 mA
-10 0
-15 -10
|S12| (dB)
|S22| (dB)
-20 -20
-25 -30
+25°C +25°C
TL -40°C TL -40°C
+85°C +85°C
-30 -40
0 1 2 3 4 5 6 0 1 2 3 4 5 6
Frequency (GHz) Frequency (GHz)
* Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature.
Preliminary
RBIAS 12 39 62 91
Note: RBIAS provides DC bias stability over temperature.
VS
1 uF
RBIAS
1000 pF Mounting Instructions
CD 1. Solder the copper pad on the backside of the
A65 LC
device package to the ground plane.
2. Use a large ground pad area with many plated
CB CB
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
1 2 3 1 2 3
1