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NCP3218G
7-Bit, Programmable,
3-Phase, Mobile CPU
Synchronous Buck Controller
The APD3212/NCP3218/NCP3218G is a highly efficient,
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multi−phase, synchronous buck switching regulator controller. With
its integrated drivers, the APD3212/NCP3218/NCP3218G is
optimized for converting the notebook battery voltage into the core
supply voltage required by high performance Intel processors. An
internal 7−bit DAC is used to read a VID code directly from the
1 48
processor and to set the CPU core voltage to a value within the range 1 48
of 0.3 V to 1.5 V. The APD3212/NCP3218/NCP3218G is QFN48 QFN48
programmable for 1−, 2−, or 3−phase operation. The output signals CASE 485AJ CASE 485BA
ensure interleaved 2− or 3−phase operation.
The APD3212/NCP3218/NCP3218G uses a multimode architecture MARKING DIAGRAM
1
run at a programmable switching frequency and optimized for
xxx = Specific Device Code
efficiency depending on the output current requirement. The (ADP3212 or NCP3218/G)
APD3212/NCP3218/NCP3218G switches between single− and xxP321x A = Assembly Location
multi−phase operation to maximize efficiency with all load conditions. AWLYYWWG WL = Wafer Lot
The chip includes a programmable load line slope function to adjust the YY = Year
WW = Work Week
output voltage as a function of the load current so that the core voltage is
G = Pb−Free Package
always optimally positioned for a load transient. The APD3212/
NCP3218/NCP3218G also provides accurate and reliable short−circuit
protection, adjustable current limiting, and a delayed power−good ORDERING INFORMATION
output. The IC supports On−The−Fly (OTF) output voltage changes See detailed ordering and shipping information in the package
dimensions section on page 33 of this data sheet.
requested by the CPU.
The APD3212/NCP3218/NCP3218G are specified over • Active Current Balancing Between Output Phases
the extended commercial temperature range of −40°C to • Independent Current Limit and Load Line Setting
100°C. The ADP3212 is available in a 48−lead QFN 7x7mm Inputs for Additional Design Flexibility
0.5mm pitch package. The NCP3218/NCP3218G is
• Built−In Power−Good Blanking Supports Voltage
available in a 48−lead QFN 6x6mm 0.4mm pitch package.
Identification (VID) On−The−Fly (OTF) Transients
ADP3212/NCP3218 has 1.1 V Vboot Voltage, while
NCP3218G has 987.5 mV Vboot Voltage. Except for the • 7−Bit, Digitally Programmable DAC with 0.3 V to
packages and Vboot Voltages, the APD3212/NCP3218/ 1.5 V Output
NCP3218G are identical. APD3212/NCP3218/NCP3218G • Short−Circuit Protection with Programmable Latchoff
are Halogen−Free, Pb−Free and RoHS compliant. Delay
• Clock Enable Output Delays the CPU Clock Until the
Features
Core Voltage is Stable
• Single−Chip Solution • Output Power or Current Monitor Options
• Fully Compatible with the Intel® IMVP−6.5t • 48−Lead QFN 7x7mm (ADP3212), 48−Lead QFN
Specifications
6x6mm (NCP3218/NCP3218G)
• Selectable 1−, 2−, or 3−Phase Operation with Up to 1 • Vboot = 1.1 V (ADP3212/NCP3218)
MHz per Phase Switching Frequency
Vboot = 987.5 mV (NCP3218G)
• Phase 1 and Phase 2 Integrated MOSFET Drivers • These are Pb−Free Devices
• Input Voltage Range of 3.3 V to 22 V • Fully RoHS Compliant
• Guaranteed ±8 mV Worst−Case Differentially Sensed
Core Voltage Error Over Temperature Applications
• Automatic Power−Saving Mode Maximizes Efficiency • Notebook Power Supplies for Next−Generation Intel
with Light Load During Deeper Sleep Operation Processors
PIN ASSIGNMENT
DPRSLP
VID0
VID1
VID2
VID3
VID4
VID5
VID6
VCC
PH0
PH1
PSI
EN 1 BST1
PWRGD DRVH1
IMON SW1
CLKEN SWFB1
FBRTN ADP3212 PVCC
FB DRVL1
COMP NCP3218 PGND
TRDET (top view) DRVL2
VARFREQ SWFB2
VRTT SW2
TTSNS DRVH2
GND BST2
ILIM
CSCOMP
RT
RPM
LLINE
RAMP
SWFB3
IREF
CSSUM
CSREF
PWM3
OD3
GND VCC EN RPM RT RAMP VARFREQ
BST1
UVLO
TRDET Shutdown Oscillator DRVH1
TRDET Generator
and Bias
COMP Driver SW1
VEA Current Logic
FB − Balancing PVCC
+ + Circuit
S DRVL1
REF + CSREF
OVP PGND
LLINE S _ +
+ − BST2
1.55 V
SWFB1 DRVH2
SWFB2 SW2
SWFB3 PVCC
PH0 DRVL2
Number of
Phases PGND
PH1
DAC + 200 mV OD3
− OCP PWM3
+ Shutdown
CSREF Delay
PSI and PSI
− DPRSLP
+ Logic DPRSLP
Current
Limit
DAC − 300 mV Circuit Current
Current IMON
PWRGD Monitor
PWRGD Start Up Monitor
PWRGD Open Delay
Drain Soft CSREF
+
Transient −
Delay CSSUM
CLKEN CLKEN
Open CSCOMP
Delay
Drain CLKEN Disable ILIM
Start Up
Precision Delay Thermal TTSENSE
FBRTN Reference Throttle
Control VRTT
VID
DAC Soft Start
DAC
REF
IREF
VID6
VID5
VID4
VID3
VID2
VID1
VID0
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ADP3212, NCP3218, NCP3218G
PIN ASSIGNMENT
Pin No. Mnemonic Description
1 EN Enable Input. Driving this pin low shuts down the chip, disables the driver outputs, pulls PWRGD and
VRTT low, and pulls CLKEN high.
2 PWRGD Power−Good Output. Open−drain output. A low logic state means that the output voltage is outside of the
VID DAC defined range.
3 IMON Current Monitor Output. This pin sources a current proportional to the output load current. A resistor to
FBRTN sets the current monitor gain.
4 CLKEN Clock Enable Output. Open−drain output. A low logic state enables the CPU internal PLL clock to lock to
the external clock.
5 FBRTN Feedback Return Input/Output. This pin remotely senses the CPU core voltage. It is also used as the
ground return for the VID DAC and the voltage error amplifier blocks.
6 FB Voltage Error Amplifier Feedback Input. The inverting input of the voltage error amplifier.
7 COMP Voltage Error Amplifier Output and Frequency Compensation Point.
8 TRDET Transient Detect Output. This pin is pulled low when a load release transient is detected. During repetitive
load transients at high frequencies, this circuit optimally positions the maximum and minimum output
voltage into a specified loadline window.
9 VARFREQ Variable Frequency Enable Input. A high logic state enables the PWM clock frequency to vary with VID code.
10 VRTT Voltage Regulator Thermal Throttling Output. Logic high state indicates that the voltage regulator
temperature at the remote sensing point exceeded a set alarm threshold level.
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ADP3212, NCP3218, NCP3218G
PIN ASSIGNMENT
Pin No. Mnemonic Description
11 TTSNS Thermal Throttling Sense and Crowbar Disable Input. A resistor divider where the upper resistor is connected
to VCC, the lower resistor (NTC thermistor) is connected to GND, and the center point is connected to this
pin and acts as a temperature sensor half bridge. Connecting TTSNS to GND disables the thermal throttling
function and disables the crowbar, or Overvoltage Protection (OVP), feature of the chip.
12 GND Analog and Digital Signal Ground.
13 IREF This pin sets the internal bias currents. A 80 kW resistor is connected from this pin to ground.
14 RPM RPM Mode Timing Control Input. A resistor between this pin to ground sets the RPM mode turn−on
threshold voltage.
15 RT Multi−phase Frequency Setting Input. An external resistor connected between this pin and GND sets the
oscillator frequency of the device when operating in multi−phase PWM mode threshold of the converter.
16 RAMP PWM Ramp Slope Setting Input. An external resistor from the converter input voltage node to this pin sets
the slope of the internal PWM stabilizing ramp used for phase−current balancing.
17 LLINE Output Load Line Programming Input. The center point of a resistor divider between CSREF and
CSCOMP is connected to this pin to set the load line slope.
18 CSREF Current Sense Reference Input. This pin must be connected to the common point of the output inductors.
The node is shorted to GND through an internal switch when the chip is disabled to provide soft stop
transient control of the converter output voltage.
19 CSSUM Current Sense Summing Input. External resistors from each switch node to this pin sum the inductor
currents to provide total current information.
20 CSCOMP Current Sense Compensation Point. A resistor and capacitor from this pin to CSSUM determine the gain of
the current−sense amplifier and the positioning loop response time.
21 ILIM Current Limit Setpoint. An external resistor from this pin to CSCOMP sets the current limit threshold of the
converter.
22 OD3 Multi−phase Output Disable Logic Output. This pin is actively pulled low when the APD3212/NCP3218/
NCP3218G enters single−phase mode or during shutdown. Connect this pin to the SD inputs of the
Phase−3 MOSFET drivers.
23 PWM3 Logic−Level PWM Output for phase 3. Connect to the input of an external MOSFET driver such as the
ADP3611.
24 SWFB3 Current Balance Input for phase 3. Input for measuring the current level in phase 3. SWFB3 should be left
open for 1 or 2 phase configuration.
25 BST2 High−Side Bootstrap Supply for Phase 2. A capacitor from this pin to SW2 holds the bootstrapped voltage
while the high−side MOSFET is on.
26 DRVH2 High−Side Gate Drive Output for Phase 2.
27 SW2 Current Return for High−Side Gate Drive for phase 2.
28 SWFB2 Current Balance Input for phase 2. Input for measuring the current level in phase 2. SWFB2 should be left
open for 1 phase configuration.
29 DRVL2 Low−Side Gate Drive Output for Phase 2.
30 PGND Low−Side Driver Power Ground
31 DRVL1 Low−Side Gate Drive Output for Phase 1.
32 PVCC Power Supply Input/Output of Low−Side Gate Drivers.
33 SWFB1 Current Balance Input for phase 1. Input for measuring the current level in phase 1.
34 SW1 Current Return For High−Side Gate Drive for phase 1.
35 DRVH1 High−Side Gate Drive Output for Phase 1.
36 BST1 High−Side Bootstrap Supply for Phase 1. A capacitor from this pin to SW1 holds the bootstrapped voltage
while the high−side MOSFET is on.
37 VCC Power Supply Input/Output of the Controller.
38 PH1 Phase Number Configuration Input. Connect to VCC for 3 phase configuration.
39 PH0 Phase Number Configuration Input. Connect to GND for 1 phase configuration. Connect to VCC for
multi−phase configuration.
40 DPRSLP Deeper Sleep Control Input.
41 PSI Power State Indicator Input. Pulling this pin to GND forces the APD3212/NCP3218/NCP3218G to operate
in single−phase mode.
42 to VID6 to VID0 Voltage Identification DAC Inputs. When in normal operation mode, the DAC output programs the FB
48 regulation voltage from 0.3 V to 1.5 V (see Table 3).
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ADP3212, NCP3218, NCP3218G
ELECTRICAL CHARACTERISTICS
VCC = PVCC = 5.0 V, FBRTN = PGND = GND = 0 V, H = 5.0 V, L = 0 V, EN = VARFREQ = H, DPRSLP = L, PSI = 1.05 V,
VVID = VDAC = 1.2000 V, TA = −40°C to 100°C, unless otherwise noted. (Note 1) Current entering a pin (sink current) has a positive sign.
Parameter Symbol Conditions Min Typ Max Units
VOLTAGE CONTROL
VOLTAGE ERROR AMPLIFIER (VEAMP)
FB, LLINE Voltage Range (Note 2) VFB, VLLINE Relative to CSREF = VDAC −200 +200 mV
FB, LLINE Offset Voltage (Note 2) VOSVEA Relative to CSREF = VDAC −0.5 +0.5 mV
LLINE Bias Current ILLINE −100 +100 nA
FB Bias Current IFB −1.0 +1.0 mA
LLINE Positioning Accuracy VFB − VVID Measured on FB relative to VVID, −77.5 −80 −82.5 mV
LLINE forced 80 mV below CSREF
COMP Voltage Range (Note 2) VCOMP 0.85 4.0 V
COMP Current ICOMP COMP = 2.0 V, CSREF = VDAC mA
FB forced 200 mV below CSREF −0.75
FB forced 200 mV above CSREF 6
COMP Slew Rate SRCOMP CCOMP = 10 pF, CSREF = VDAC, V/ms
Open loop configuration
FB forced 200 mV below CSREF 15
FB forced 200 mV above CSREF −20
Gain Bandwidth (Note 2) GBW Non−inverting unit gain configuration, 20 MHz
RFB = 1 kW
VID DAC VOLTAGE REFERENCE
VDAC Voltage Range (Note 2) See VID table 0 1.5 V
VDAC Accuracy VFB − VVID Measured on FB (includes offset), mV
relative to VVID
VVID = 1.2000 V to 1.5000 V,
T = −40°C to 100°C −8.5 +8.5
VVID = 0.3000 V to 1.1875 V,
T = −40°C to 100°C −7.5 +7.5
VDAC Differential Non−linearity −1.0 +1.0 LSB
(Note 2)
VDAC Line Regulation ΔVFB VCC = 4.75 V to 5.25 V 0.02 %
VDAC Boot Voltage VBOOTFB Measured during boot delay period 1.100 V
(ADP3212, NCP3218)
VDAC Boot Voltage (NCP3218G) VBOOTFB Measured during boot delay period 987.5 mV
Soft−Start Delay (Note 2) tDSS Measured from EN pos edge to 200 ms
FB = 50 mV
Soft−Start Time tSS Measured from FB = 50 mV to FB 1.4 ms
settles to 1.1 V within 5%
Boot Delay tBOOT Measured from FB settling to 1.1 V 60 ms
within 5% to CLKEN neg edge
VDAC Slew Rate (Note 2) Soft−Start 0.0625 LSB/ms
Non−LSB VID step, DPRSLP = H, 0.25
Slow C4 Entry/Exit
Non−LSB VID step, DPRSLP = L, 1.0
Fast C4 Exit
LSB VID step, DVID transition 0.4
FBRTN Current IFBRTN −90 −200 mA
VOLTAGE MONITORING and PROTECTION
POWER GOOD
CSREF Undervoltage Threshold VUVCSREF Relative to nominal VDAC voltage −240 −300 −360 mV
CSREF Overvoltage Threshold VOVCSREF Relative to nominal VDAC voltage 150 200 250 mV
CSREF Crowbar Voltage VCBCSREF Relative to FBRTN, VVID > 1.1 V 1.5 1.55 1.6 V
Threshold Relative to FBRTN, VVID ≤ 1.1 V 1.3 1.35 1.4
1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
2. Guaranteed by design or bench characterization, not production tested.
3. Based on bench characterization data.
4. Timing is referenced to the 90% and 10% points, unless otherwise noted.
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ADP3212, NCP3218, NCP3218G
ELECTRICAL CHARACTERISTICS
VCC = PVCC = 5.0 V, FBRTN = PGND = GND = 0 V, H = 5.0 V, L = 0 V, EN = VARFREQ = H, DPRSLP = L, PSI = 1.05 V,
VVID = VDAC = 1.2000 V, TA = −40°C to 100°C, unless otherwise noted. (Note 1) Current entering a pin (sink current) has a positive sign.
Parameter Symbol Conditions Min Typ Max Units
VOLTAGE MONITORING and PROTECTION
POWER GOOD
CSREF Reverse Voltage VRVCSREF Relative to FBRTN, latchoff mode mV
Threshold CSREF is falling −370 −300
CSREF is rising −75 −10
PWRGD Low Voltage VPWRGD IPWRGD(SINK) = 4 mA 85 250 mV
PWRGD High, Leakage Current IPWRGD VPWRDG = 5.0 V 1.0 mA
PWRGD Startup Delay TSSPWRGD Measured from CLKEN neg edge to 8.0 ms
PWRGD pos edge
PWRGD Latchoff Delay TLOFFPWRGD Measured from Out−off−Good−Window 120 ms
event to Latchoff (switching stops)
PWRGD Propagation Delay TPDPWRGD Measured from Out−off−Good−Window 200 ns
(Note 3) event to PWRGD neg edge
Crowbar Latchoff Delay TLOFFCB Measured from Crowbar event to 200 ns
(Note 2) latchoff (switching stops)
PWRGD Masking Time Triggered by any VID change or OCP 100 ms
event
CSREF Soft−Stop Resistance EN = L or latchoff condition 70 W
CURRENT CONTROL
CURRENT−SENSE AMPLIFIER (CSAMP)
CSSUM, CSREF Common−Mode Voltage range of interest 0 2.0 V
Range (Note 2)
CSSUM, CSREF Offset Voltage VOSCSA CSREF – CSSUM , TA = −40°C to 85°C −1.2 +1.2 mV
CSSUM Bias Current IBCSSUM −20 +20 nA
CSREF Bias Current IBCSREF −3.0 +3.0 mA
CSCOMP Voltage Range Voltage range of interest 0.05 2.0 V
(Note 2)
CSCOMP Current ICSCOMPsource CSCOMP = 2.0 V, CSSUM forced −750 mA
200 mV below CSREF
ICSCOMPsink CSSUM forced 200 mV above CSREF 1.0 mA
CSCOMP Slew Rate (Note 2) CCSCOMP = 10 pF, CSREF = VDAC, V/ms
Open loop configuration
CSSUM forced 200 mV below CSREF 20
CSSUM forced 200 mV above CSREF −20
Gain Bandwidth (Note 2) GBWCSA Non−inverting unit gain configuration 20 MHz
RFB = 1 kW
CURRENT MONITORING and PROTECTION
CURRENT REFERENCE
IREF Voltage VREF RREF = 80 kW to set IREF = 20 mA 1.55 1.6 1.65 V
CURRENT LIMITER (OCP)
Current Limit (OCP) Threshold VLIMTH Measured from CSCOMP to CSREF, mV
RLIM = 1.5 kW,
3−ph configuration, PSI = H −75 −90 −106
3−ph configuration, PSI = L −22 −30 −38
2−ph configuration, PSI = H −75 −90 −106
2−ph configuration, PSI = L −36 −45 −54
1−ph configuration −75 −90 −106
Current Limit Latchoff Delay Measured from OCP event to PWRGD 120 ms
de−assertion
1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
2. Guaranteed by design or bench characterization, not production tested.
3. Based on bench characterization data.
4. Timing is referenced to the 90% and 10% points, unless otherwise noted.
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ADP3212, NCP3218, NCP3218G
ELECTRICAL CHARACTERISTICS
VCC = PVCC = 5.0 V, FBRTN = PGND = GND = 0 V, H = 5.0 V, L = 0 V, EN = VARFREQ = H, DPRSLP = L, PSI = 1.05 V,
VVID = VDAC = 1.2000 V, TA = −40°C to 100°C, unless otherwise noted. (Note 1) Current entering a pin (sink current) has a positive sign.
Parameter Symbol Conditions Min Typ Max Units
CURRENT MONITOR
Current Gain Accuracy IMON/ILIM Measured from ILIM to IMON −
ILIM = −20 mA 3.7 4.0 4.3
ILIM = −10 mA 3.6 4.0 4.4
ILIM = −5 mA 3.5 4.0 4.5
IMON Clamp Voltage VMAXMON Relative to FBRTN, ILIMP = −30 mA 1.0 1.15 V
PULSE WIDTH MODULATOR
CLOCK OSCILLATOR
RT Voltage VRT VARFREQ = high, RT = 125 kW, V
VVID = 1.5000 V 1.125 1.25 1.375
VARFREQ = low 0.9 1.0 1.1
See also VRT(VVID) formula
PWM Clock Frequency Range fCLK Operation of interest 0.3 3.0 MHz
(Note 2)
PWM Clock Frequency fCLK TA = +25°C, VVID = 1.2000 V kHz
RT = 72 kW 1100 1257 1400
RT = 120 kW 700 800 900
RT = 180 kW 500 550 600
RAMP GENERATOR
RAMP Voltage VRAMP EN = high, IRAMP = 60 mA 0.9 1.0 1.1 V
EN = low VIN
RAMP Current Range (Note 2) IRAMP EN = high 1.0 100 mA
EN = low, RAMP = 19 V −1.0 +1.0
PWM COMPARATOR
PWM Comparator Offset (Note 2) VOSRPM VRAMP − VCOMP ±3.0 mV
RPM COMPARATOR
RPM Current IRPM VVID = 1.2 V, RT = 215 kW −9.0 mA
See also IRPM(RT) formula
RPM Comparator Offset (Note 2) VOSRPM VCOMP − (1 + VRPMTH) ±3.0 mV
EPWM CLOCK SYNC
Trigger Threshold (Note 2) Relative to COMP sampled TCLK time mV
earlier
3−phase configuration 350
2−phase configuration 400
1−phase configuration 450
TRDET
Trigger Threshold (Note 2) Relative to COMP sampled TCLK time mV
earlier
3−phase configuration −450
2−phase configuration −500
1−phase configuration −600
TRDET Low Voltage (Note 2) VLTRDET Logic low, ITRDETsink = 4 mA 30 300 mV
TRDET Leakage Current IHTRDET Logic high, VTRDET = VCC 5.0 mA
SWITCH AMPLIFIER
SW Common Mode Range VSW(X)CM Operation of interest for current sensing −600 +200 mV
(Note 2)
SWFB Input Resistance RSW(X) SWX = 0 V, SWFB = 0 V 20 35 50 kW
ZERO CURRENT SWITCHING COMPARATOR
SW ZCS Threshold VDCM(SW1) DCM mode, DPRSLP = 3.3 V −6.0 mV
1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
2. Guaranteed by design or bench characterization, not production tested.
3. Based on bench characterization data.
4. Timing is referenced to the 90% and 10% points, unless otherwise noted.
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ADP3212, NCP3218, NCP3218G
ELECTRICAL CHARACTERISTICS
VCC = PVCC = 5.0 V, FBRTN = PGND = GND = 0 V, H = 5.0 V, L = 0 V, EN = VARFREQ = H, DPRSLP = L, PSI = 1.05 V,
VVID = VDAC = 1.2000 V, TA = −40°C to 100°C, unless otherwise noted. (Note 1) Current entering a pin (sink current) has a positive sign.
Parameter Symbol Conditions Min Typ Max Units
ZERO CURRENT SWITCHING COMPARATOR
Masked Off−Time tOFFMSKD Measured from DRVH1 neg edge to 600 ns
DRVH1 pos edge at operation max
frequency
SYSTEM I/O BUFFERS
VID[6:0], DPRSLP, PSI INPUTS
Input Voltage Refers to driving signal level V
Logic low 0.3
Logic high 0.7
Input Current V = 0.2 V, VID[6:0], DPRSLP mA
(active pulldown to GND) −1.0
PSI (active pullup to VCC) 1.0
VID Delay Time (Note 2) Any VID edge to FB change 10% 200 ns
VARFREQ
Input Voltage Refers to driving signal level V
Logic low 0.7
Logic high 4.0
Input Current 1.0 mA
EN INPUT
Input Voltage Refers to driving signal level V
Logic low 0.4
Logic high 1.9
Input Current EN = L or EN = H (static) 10 nA
0.8 V < EN < 1.6 V (during transition) −70 mA
PH1, PH0 INPUTS
Input Voltage Refers to driving signal level V
Logic low 0.5
Logic high 4.0
Input Current 1.0 mA
CLKEN OUTPUT
Output Low Voltage Logic low, Isink = 4 mA 60 200 mV
Output High, Leakage Current Logic high, VCLKEN = VCC 1.0 mA
PWM3, OD3 OUTPUTS
Output Voltage Logic low, ISINK = 400 mA 10 100 mV
Logic high, ISOURCE = −400 mA 4.0 5.0 V
THERMAL MONITORING and PROTECTION
TTSNS Voltage Range (Note 2) 0 5.0 V
TTSNS Threshold VCC = 5.0 V, TTSNS is falling 2.45 2.5 2.55 V
TTSNS Hysteresis 95 mV
TTSNS Bias Current TTSNS = 2.6 V −2.0 2.0 mA
VRTT Output Voltage VVRTT Logic low, IVRTT(SINK) = 400 mA 10 100 mV
Logic high, IVRTT(SOURCE) = −400 mA 4.5 5.0 V
SUPPLY
Supply Voltage Range VCC 4.5 5.5 V
Supply Current EN = high 7 10 mA
EN = 0 V 10 150 mA
VCC OK Threshold VCCOK VCC is rising 4.4 4.5 V
VCC UVLO Threshold VCCUVLO VCC is falling 4.0 4.15 V
1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
2. Guaranteed by design or bench characterization, not production tested.
3. Based on bench characterization data.
4. Timing is referenced to the 90% and 10% points, unless otherwise noted.
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ADP3212, NCP3218, NCP3218G
ELECTRICAL CHARACTERISTICS
VCC = PVCC = 5.0 V, FBRTN = PGND = GND = 0 V, H = 5.0 V, L = 0 V, EN = VARFREQ = H, DPRSLP = L, PSI = 1.05 V,
VVID = VDAC = 1.2000 V, TA = −40°C to 100°C, unless otherwise noted. (Note 1) Current entering a pin (sink current) has a positive sign.
Parameter Symbol Conditions Min Typ Max Units
SUPPLY
VCC Hysteresis (Note 2) 150 mV
HIGH−SIDE MOSFET DRIVER
Pullup Resistance, Sourcing BST = PVCC 1.8 3.3 W
Current (Note 3)
Pulldown Resistance, Sinking BST = PVCC 1.0 2.0 W
Current (Note 3)
Transition Times trDRVH BST = PVCC, CL = 3 nF, Figure 2 15 30 ns
tfDRVH BST = PVCC, CL = 3 nF, Figure 2 13 25
Dead Delay Times tpdhDRVH BST = PVCC, Figure 2 15 30 40 ns
BST Quiescent Current EN = L (Shutdown) 1.0 10 mA
EN = H, no switching 200
LOW−SIDE MOSFET DRIVER
Pullup Resistance, Sourcing 1.7 2.8 W
Current (Note 3)
Pulldown Resistance, Sinking 0.8 1.7 W
Current (Note 3)
Transition Times trDRVL CL = 3 nF, Figure 2 15 35 ns
tfDRVL CL = 3 nF, Figure 2 14 35
Propagation Delay Times tpdhDRVL CL = 3 nF, Figure 2 11 30 ns
SW Transition Timeout tTOSW DRVH = L, SW = 2.5 V 100 250 350 ns
SW Off Threshold VOFFSW 2.5 V
PVCC Quiescent Current EN = L (Shutdown) 1.0 10 mA
EN = H, no switching 170
BOOTSTRAP RECTIFIER SWITCH
On Resistance (Note 3) EN = L or EN = H and DRVL = H 4.0 6.0 8.0 W
1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
2. Guaranteed by design or bench characterization, not production tested.
3. Based on bench characterization data.
4. Timing is referenced to the 90% and 10% points, unless otherwise noted.
tfDRVL
trDRVL
DRVL
DRVH
VTH VTH
(WITH RESPECT TO SW)
tpdhDRVL
SW 1.0 V
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ADP3212, NCP3218, NCP3218G
TEST CIRCUITS
7−BIT CODE
5V
48
PH1
PH2
VID1
VCC
3.3 V
PSI
DPRSLP
VID0
VID2
VID3
VID4
VID5
VID6
EN 1
BST1
PWRGD DRVH1
IMON SW1
CLKEN SWFB1
FBRTN PVCC
FB DRVL1
COMP ADP3212 PGND
1 kW TRDET DRVL2
VARFREQ SWFB2
VRTT SW2
CSCOMP
TTSNS DRVH2
CSSUM
CSREF
SWFB3
PWM3
BST2
RAMP
LLINE
IREF
GND RPM
OD3
ILIM
RT
80 kW
20 kW
100 nF
5.0 V
ADP3212
37 VCC
COMP
7
5.0 V ADP3212
10 kW
37 VCC FB
6 −
CSCOMP
20 +
39 kW 100 nF LLINE
17
CSSUM
19 −
1 kW DV
CSREF CSREF
18 + 18 VID DAC
1.0 V 1.0 V
CSCOMP * 1.0 V
V OS +
12 GND 40 V 12 GND
DV FB + FB DV + DV * FB DV+0 mV
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10
ADP3212, NCP3218, NCP3218G
400 1000
VID = 1.4125 V
VID = 1.2125 V
300 VARFREQ = 0 V
FREQUENCY (kHz)
250
VARFREQ = 5 V VID = 1.1 V
200
100
VID = 0.6125 V
RT = 187 kW
50
2 Phase Mode
0 100
0.25 0.50 0.75 1.00 1.25 1.50 10 100 1000
VID OUTPUT VOLTAGE (V) Rt RESISTANCE (kW)
Figure 6. Switching Frequency vs. VID Output Figure 7. Per Phase Switching Frequency vs.
Voltage in PWM Mode RT Resistance
1 1
PWRGD
PWRGD 2
2
CLKEN
CLKEN 3
3
EN EN
4 4
1: 0.5 V/div 3: 5 V/div 1 ms/div 1: 0.5 V/div 3: 5 V/div 4 ms/div
GPU Mode CPU Mode
2: 2 V/div 4: 5 V/div 2: 2 V/div 4: 5 V/div
Output Voltage
1
PWRGD
2
EN
3
CLKEN
4
1: 0.5 V/div 3: 2 V/div 200 ms/div 1 A Load
2: 2 V/div 4: 2 V/div
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11
ADP3212, NCP3218, NCP3218G
SW1
1
1 SW1
SW2 SW2
2 2
SW3 SW3
3 3
DPRSLP PSI
4 4
1: 10 V/div 3: 10 V/div 4 ms/div 1: 10 V/div 3: 10 V/div 4 ms/div
2: 10 V/div 4: 2 V/div 2: 10 V/div 4: 0.5 V/div
Figure 11. DPRSLP Transition with PSI = High Figure 12. PSI Transition with DPRSLP = Low
SW1
SW1
1
1
SW2 SW2
2
2
SW3 SW3
3
3
DPRSLP PSI
4 4
1: 10 V/div 3: 10 V/div 4 ms/div 1: 10 V/div 3: 10 V/div 4 ms/div
2: 10 V/div 4: 2 V/div 2: 10 V/div 4: 0.5 V/div
Figure 13. DPRSLP Transition with PSI = High Figure 14. PSI Transition with DPRSLP = Low
SW1
SW1
1 1
SW2 SW2
2 2
SW3 SW3
3
3
DPRSLP DPRSLP
4 4
1: 10 V/div 3: 10 V/div 4 ms/div 1: 10 V/div 3: 10 V/div 4 ms/div
2: 10 V/div 4: 2 V/div 2: 10 V/div 4: 2 V/div
Figure 15. DPRSLP Transition with PSI = Low Figure 16. DPRSLP Transition with PSI = Low
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12
ADP3212, NCP3218, NCP3218G
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13
ADP3212, NCP3218, NCP3218G
VRMP
FLIP−FLOP
IR = AR x IRAMP Q BST1
S
VCC
GATE DRIVER
RD
BST
DRVH DRVH1 RI L
CR IN
SW
400 ns FLIP−FLOP SW1
1V DCM DRVL
Q S Q LOAD
DRVL1
Q
RD 100 W
SWFB1
R2 R1 BST2
VCC
GATE DRIVER
BST
DRVH RI L
IN DRVH2
30 mV R2 R1 SW
1V SW2
DCM DRVL DRVL2
VDC SWFB2
+ – CSREF 100 W
+ VCS –
+ +
COMP FB FBRTN LLINE CSCOMP CSSUM
RCS RPH
RA CA CB CCS RPH
CFB RFB
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14
ADP3212, NCP3218, NCP3218G
− SWFB1 100 W
AD
0.2 V
+
− SWFB2 100 W
AD
0.2 V
+
Gate Driver VCC
IR = AR x IRAMP
Flip−Flop BST
Clock PWM3 DRVH RL L
Oscillator S Q IN
SW
+ LOAD
CR RD DRVL
−
SWFB3 100 W
AD
−
0.2 V
+
VCC +
_ DAC
CSREF
_
+
RAMP S S RPH
+ +
FB + CSSUM
− + −
COMP FBRTN CSCOMP
LLINE RPH
RA RCS
CA RPH
CB
CFB CCS
RB
Figure 18. 3−Phase PWM Mode Operation
Setting Switch Frequency 7 shows the relationship between clock frequency and VID
Master Clock Frequency in PWM Mode voltage, parameterized by RT resistance.
When the APD3212/NCP3218/NCP3218G runs in To determine the switching frequency per phase, divide
PWM, the clock frequency is set by an external resistor the clock by the number of phases in use.
connected from the RT pin to GND. The frequency is
Switching Frequency in RPM Mode; Single−Phase
constant at a given VID code but varies with the VID
Operation
voltage: the lower the VID voltage, the lower the clock In single−phase RPM mode, the switching frequency is
frequency. The variation of clock frequency with VID controlled by the ripple voltage on the COMP pin, rather
voltage maintains constant VCORE ripple and improves than by the master clock. Each time the COMP pin voltage
power conversion efficiency at lower VID voltages. Figure
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15
ADP3212, NCP3218, NCP3218G
exceeds the RPM pin voltage threshold level determined by An additional resistor divider connected between the
the VID voltage and the external resistor RPM resistor, an CSCOMP and CSREF pins with the midpoint connected to
internal ramp signal is started and DRVH1 is driven high. the LLINE pin can be used to set the load line required by the
The slew rate of the internal ramp is programmed by the microprocessor specification. The current information to set
current entering the RAMP pin. One−third of the RAMP the load line is then given as the voltage difference between
current charges an internal ramp capacitor (5 pF typical) and the LLINE and CSREF pins. This configuration allows the
creates a ramp. When the internal ramp signal intercepts the load line slope to be set independent from the current limit
COMP voltage, the DRVH1 pin is reset low. threshold. If the current limit threshold and load line do not
have to be set independently, the resistor divider between the
Differential Sensing of Output Voltage CSCOMP and CSREF pins can be omitted and the
The APD3212/NCP3218/NCP3218G combines differential CSCOMP pin can be connected directly to LLINE. To
sensing with a high accuracy VID DAC, referenced by a disable voltage positioning entirely (that is, to set no load
precision band gap source and a low offset error amplifier, line), LLINE should be tied to CSREF.
to meet the rigorous accuracy requirement of the Intel To provide the best accuracy for current sensing, the CSA
IMVP−6.5 specification. In steady−state mode, the has a low offset input voltage and the sensing gain is set by
combination of the VID DAC and error amplifier maintain an external resistor ratio.
the output voltage for a worst−case scenario within ±8 mV
of the full operating output voltage and temperature range. Active Impedance Control Mode
The CPU core output voltage is sensed between the FB To control the dynamic output voltage droop as a function
and FBRTN pins. FB should be connected through a resistor of the output current, the signal that is proportional to the
to the positive regulation point; the VCC remote sensing pin total output current, converted from the voltage difference
of the microprocessor. FBRTN should be connected directly between LLINE and CSREF, can be scaled to be equal to the
to the negative remote sensing point; the VSS sensing point required droop voltage. This droop voltage is calculated by
of the CPU. The internal VID DAC and precision voltage multiplying the droop impedance of the regulator by the
reference are referenced to FBRTN and have a maximum output current. This value is used as the control voltage of
current of 200 mA for guaranteed accurate remote sensing. the PWM regulator. The droop voltage is subtracted from the
DAC reference output voltage, and the resulting voltage is
Output Current Sensing used as the voltage positioning set point. The arrangement
The APD3212/NCP3218/NCP3218G includes a results in an enhanced feed forward response.
dedicated Current Sense Amplifier (CSA) to monitor the
total output current of the converter for proper voltage Current Control Mode and Thermal Balance
positioning vs. load current and for over current detection. The APD3212/NCP3218/NCP3218G has individual
Sensing the current delivered to the load is an inherently inputs for monitoring the current of each phase. The phase
more accurate method than detecting peak current or current information is combined with an internal ramp to
sampling the current across a sense element, such as the create a current−balancing feedback system that is
low−side MOSFET. The current sense amplifier can be optimized for initial current accuracy and dynamic thermal
configured several ways, depending on system optimization balance. The current balance information is independent
objectives, and the current information can be obtained by: from the total inductor current information used for voltage
• Output inductor ESR sensing without the use of a positioning described in the Active Impedance Control
thermistor for the lowest cost. Mode section.
• Output inductor ESR sensing with the use of a The magnitude of the internal ramp can be set so that the
thermistor that tracks inductor temperature to improve transient response of the system is optimal. The
accuracy. APD3212/NCP3218/NCP3218G monitors the supply
voltage to achieve feed forward control whenever the supply
• Discrete resistor sensing for the highest accuracy. voltage changes. A resistor connected from the power input
At the positive input of the CSA, the CSREF pin is
voltage rail to the RAMP pin determines the slope of the
connected to the output voltage. At the negative input (that
internal PWM ramp. More detail about programming the
is, the CSSUM pin of the CSA), signals from the sensing
ramp is provided in the Application Information section.
element (in the case of inductor DCR sensing, signals from
External resistors are placed in series with the SWFB1,
the switch node side of the output inductors) are summed
SWFB2, and SWFB3 pins to create an intentional current
together by series summing resistors. The feedback resistor
imbalance. Such a condition can exist when one phase has
between the CSCOMP and CSSUM pins sets the gain of the
better cooling and supports higher currents the other phases.
current sense amplifier, and a filter capacitor is placed in
Resistors RSWSB1, RSWFB2, and RSWFB3 (see
parallel with this resistor. The current information is then
Figure 25) can be used to adjust thermal balance. It is
given as the voltage difference between the CSCOMP and
recommended to add these resistors during the initial design
CSREF pins. This signal is used internally as a differential
to make sure placeholders are provided in the layout.
input for the current limit comparator.
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16
ADP3212, NCP3218, NCP3218G
To increase the current in any given phase, users should PWRGD range is monitored. To prevent a false alarm, the
make RSWFB for that phase larger (that is, RSWFB = 100 W power−good circuit is masked during various system
for the hottest phase and do not change it during balance transitions, including a VID change and entrance into or exit
optimization). Increasing RSWFB to 150 W makes a out of deeper sleep. The duration of the PWRGD mask is set
substantial increase in phase current. Increase each RSWFB to approximately 130 ms by an internal timer. If the voltage
value by small amounts to achieve thermal balance starting drop is greater than 200 mV during deeper sleep entry or
with the coolest phase. slow deeper sleep exit, the duration of PWRGD masking is
If adjusting current balance between phases is not needed, extended by the internal logic circuit.
RSWFB should be 100 W for all phases.
Powerup Sequence and Soft−Start
VDC
The power−on ramp−up time of the output voltage is set
ADP3212 Phase 1 internally. The APD3212/NCP3218/NCP3218G steps
Inductor
RSWFB1 sequentially through each VID code until it reaches the boot
SWFB1 voltage. The powerup sequence, including the soft−start is
33
illustrated in Figure 20.
VDC
After EN is asserted high, the soft−start sequence starts.
Phase 2 The core voltage ramps up linearly to the boot voltage. The
Inductor
RSWFB2 APD3212/NCP3218/NCP3218G regulates at the boot
SWFB2 voltage for approximately 90 ms. After the boot time is over,
28
CLKEN is asserted low. Before CLKEN is asserted low, the
VDC
VID pins are ignored. 9 ms after CLKEN is asserted low,
Phase 3 PWRGD is asserted high.
RSWFB3 Inductor
SWFB3 VCC = 5 V
24
EN
VBOOT
Figure 19. Current Balance Resistors
VCORE
Voltage Control Mode
tBOOT
A high−gain bandwidth error amplifier is used for the
voltage mode control loop. The non−inverting input voltage CLKEN
is set via the 7−bit VID DAC. The VID codes are listed in
Table 3. The non−inverting input voltage is offset by the tCPU_PWRGD
droop voltage as a function of current, commonly known as PWRGD
active voltage positioning. The output of the error amplifier
is the COMP pin, which sets the termination voltage of the Figure 20. Powerup Sequence of
internal PWM ramps. APD3212/NCP3218/NCP3218G
At the negative input, the FB pin is tied to the output sense
location using RB, a resistor for sensing and controlling the Current Limit
output voltage at the remote sensing point. The main loop The APD3212/NCP3218/NCP3218G compares the
compensation is incorporated in the feedback network differential output of a current sense amplifier to a
connected between the FB and COMP pins. programmable current limit set point to provide the current
limiting function. The current limit threshold is set by the user
Power−Good Monitoring with a resistor connected from the ILIM pin to CSCOMP.
The power−good comparator monitors the output voltage
via the CSREF pin. The PWRGD pin is an open−drain Changing VID On−The−Fly (OTF)
output that can be pulled up through an external resistor to The APD3212/NCP3218/NCP3218G is designed to track
a voltage rail; not necessarily the same VCC voltage rail that dynamically changing VID code. As a consequence, the
is running the controller. A logic high level indicates that the CPU VCC voltage can change without the need to reset the
output voltage is within the voltage limits defined by a range controller or the CPU. This concept is commonly referred to
around the VID voltage setting. PWRGD goes low when the as VID OTF transient. A VID OTF can occur with either
output voltage is outside of this range. light or heavy load conditions. The processor alerts the
Following the IMVP−6.5 specification, the PWRGD controller that a VID change is occurring by changing the
range is defined to be 300 mV less than and 200 mV greater VID inputs in LSB incremental steps from the start code to
than the actual VID DAC output voltage. For any DAC the finish code. The change can be either upwards or
voltage less than 300 mV, only the upper limit of the downwards steps.
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17
ADP3212, NCP3218, NCP3218G
When a VID input changes, the APD3212/NCP3218/ In DCM with a light load, the APD3212/NCP3218/
NCP3218G detects the change but ignores new code for a NCP3218G monitors the switch node voltage to determine
minimum of 400 ns. This delay is required to prevent the when to turn off the low−side FET. Figure 27 shows a typical
device from reacting to digital signal skew while the 7−bit waveform in DCM with a 1 A load current. Between t1 and
VID input code is in transition. Additionally, the VID t2, the inductor current ramps down. The current flows
change triggers a PWRGD masking timer to prevent a through the source drain of the low−side FET and creates a
PWRGD failure. Each VID change resets and retriggers the voltage drop across the FET with a slightly negative switch
internal PWRGD masking timer. node. As the inductor current ramps down to 0 A, the switch
As listed in Table 3, during a VID transient, the voltage approaches 0 V, as seen just before t2. When the
APD3212/NCP3218/NCP3218G forces PWM mode switch voltage is approximately −6 mV, the low−side FET is
regardless of the state of the system input signals. For turned off.
example, this means that if the chip is configured as a Figure 26 shows a small, dampened ringing at t2. This is
dual−phase controller but is running in single−phase mode caused by the LC created from capacitance on the switch
due to a light load condition, a current overload event causes node, including the CDS of the FETs and the output inductor.
the chip to switch to dual−phase mode to share the excessive This ringing is normal.
load until the delayed current limit latchoff cycle terminates. The APD3212/NCP3218/NCP3218G automatically goes
In user−set single−phase mode, the APD3212/NCP3218/ into DCM with a light load. Figure 27 shows the typical
NCP3218G usually runs in RPM mode. When a VID DCM waveform of the APD3212/NCP3218/NCP3218G.
transition occurs, however, the APD3212/NCP3218/ As the load increases, the APD3212/NCP3218/NCP3218G
NCP3218G switches to dual−phase PWM mode. enters into CCM. In DCM, frequency decreases with load
current. Figure 28 shows switching frequency vs. load
Light Load RPM DCM Operation current for a typical design. In DCM, switching frequency
In single−phase normal mode, DPRSLP is pulled low and is a function of the inductor, load current, input voltage, and
the APD3208 operates in Continuous Conduction Mode output voltage.
(CCM) over the entire load range. The upper and lower
MOSFETs run synchronously and in complementary phase. Q1
See Figure 21 for the typical waveforms of the DRVH SWITCH OUTPUT
INPUT
APD3212/NCP3218/NCP3218G running in CCM with a 7 VOLTAGE NODE VOLTAGE
A load current. Q2 L
DRVL C LOAD
4 OUTPUT VOLTAGE
Figure 22. Buck Topology
20 mV/DIV
INDUCTOR CURRENT
5 A/DIV
2 ON
L
SWITCH NODE 5 V/DIV
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18
ADP3212, NCP3218, NCP3218G
Output Crowbar
To prevent the CPU and other external components from
damage due to overvoltage, the APD3212/NCP3218/
Inductor NCP3218G turns off the DRVH1 and DRVH2 outputs and
Current turns on the DRVL1 and DRVL2 outputs when the output
voltage exceeds the OVP threshold (1.55 V typical).
Turning on the low−side MOSFETs forces the output
capacitor to discharge and the current to reverse due to
current build up in the inductors. If the output overvoltage
is due to a drain−source short of the high−side MOSFET,
turning on the low−side MOSFET results in a crowbar
Switch across the input voltage rail. The crowbar action blows the
Node fuse of the input rail, breaking the circuit and thus protecting
Voltage the microprocessor from destruction.
When the OVP feature is triggered, the APD3212/
NCP3218/NCP3218G is latched off. The latchoff function
can be reset by removing and reapplying VCC to the
t0 t1 t2 t3 t4 APD3212/NCP3218/NCP3218G or by briefly pulling the
EN pin low.
Figure 26. Inductor Current and Switch Node in DCM Pulling TTSNS to less than 1.0 V disables the overvoltage
protection function. In this configuration, VRTT should be
4
tied to ground.
OUTPUT VOLTAGE Reverse Voltage Protection
20 mV/DIV
Very large reverse current in inductors can cause negative
VCORE voltage, which is harmful to the CPU and other
SWITCH NODE 5 V/DIV
output components. The APD3212/NCP3218/NCP3218G
2
provides a Reverse Voltage Protection (RVP) function
without additional system cost. The VCORE voltage is
INDUCTOR CURRENT monitored through the CSREF pin. When the CSREF pin
5 A/DIV voltage drops to less than −300 mV, the APD3212/
3 NCP3218/NCP3218G triggers the RVP function by
disabling all PWM outputs and driving DRVL1 and DRVL2
1
low, thus turning off all MOSFETs. The reverse inductor
LOW−SIDE GATE DRIVE 5 V/DIV
currents can be quickly reset to 0 by discharging the built−up
2 μs/DIV energy in the inductor into the input dc voltage source via the
Figure 27. Single−Phase Waveforms in DCM with 1 A forward−biased body diode of the high−side MOSFETs. The
Load Current RVP function is terminated when the CSREF pin voltage
400
returns to greater than −100 mV.
Sometimes the crowbar feature inadvertently causes
350 output reverse voltage because turning on the low−side
MOSFETs results in a very large reverse inductor current. To
300 prevent damage to the CPU caused from negative voltage,
FREQUENCY (kHz)
9 V INPUT
250
the APD3212/NCP3218/NCP3218G maintains its RVP
19 V INPUT monitoring function even after OVP latchoff. During OVP
200 latchoff, if the CSREF pin voltage drops to less than
−300 mV, the low−side MOSFETs is turned off. DRVL
150
outputs are allowed to turn back on when the CSREF voltage
100 recovers to greater than −100 mV.
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19
ADP3212, NCP3218, NCP3218G
APD3212/NCP3218/NCP3218G shuts off. In shutdown TTSNS pin. An internal comparator circuit compares the
mode, the controller holds the PWM outputs low, shorts the TTSNS voltage to half the VCC threshold and outputs a
capacitors of the SS and PGDELAY pins to ground, and logic level signal at the VRTT output when the temperature
drives the DRVH and DRVL outputs low. trips the user−set alarm threshold. The VRTT output is
The user must adhere to proper power−supply sequencing designed to drive an external transistor that in turn provides
during startup and shutdown of the APD3212/NCP3218/ the high current, open−drain VRTT signal required by the
NCP3218G. All input pins must be at ground prior to IMVP−6.5 specification. The internal VRTT comparator
removing or applying VCC, and all output pins should be has a hysteresis of approximately 100 mV to prevent high
left in high impedance state while VCC is off. frequency oscillation of VRTT when the temperature
approaches the set alarm point.
Thermal Throttling Control
The APD3212/NCP3218/NCP3218G includes a thermal Output Current Monitor
monitoring circuit to detect whether the temperature of the The APD3212/NCP3218/NCP3218G has an output
VR has exceeded a user−defined thermal throttling current monitor. The IMON pin sources a current
threshold. The thermal monitoring circuit requires an proportional to the inductor current. A resistor from IMON
external resistor divider connected between the VCC pin pin to FBRTN sets the gain. A 0.1 mF is added in parallel with
and GND. The divider consists of an NTC thermistor and a RMON to filter the inductor ripple. The IMON pin is clamped
resistor. To generate a voltage that is proportional to to prevent it from going above 1.15 V.
temperature, the midpoint of the divider is connected to the
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20
ADP3212, NCP3218, NCP3218G
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21
ADP3212, NCP3218, NCP3218G
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22
ADP3212, NCP3218, NCP3218G
C6 330p
1
1.65 k 390 pF 39.2 k
1
2 2 1 2 1
1
COMP
R11 0
3k R4 7.32 k
CLKEN#
J2 1
1
R68
PWRGD
100 k
J22
2
V3.3S
TRDET 2 1
Therm..
2
2 1
C104 69.8 k
V5S
2 1 5%
C5
VSSSense
VCCSense
R67 1 3k1
2 1n 2
1
860 pF
DNP
R46
R73 2
4.99 k
PWRGD
1
J23
C1
2 1
1
1
100
R50 2
100
R10
VRTT
10n
TTSense
X7R
R60 2
1
12p
VCCSense
IMON
VSS_S
J6
VCC_S
J5
R74
VSSSense
VR_ON
0.1 m C4
7.50 k
TTSense
2
2 1
1
2
J24
C8
2
1
12
11
10
R27
1
2 1
TRDET
GND
TTSNS
VRTT
COMP
FB
FBRTN
CLKEN
IMON
PWRGD
EN
VARFREQ
U1
VDC R18
80.6 k
R15 1
CSREF
2 13 48
IREF
1
VID0 VID0
J7 280 k
0
14 47
CON2 R16 1 RPM VID1 VID1
VCC(core) RTN
2
1 2 1n 15 46
1n 402 k VID2 VID2
VCC(core)
2 1 1 2 2 R20 1 2 1 RT
2 R17 1 16 45
DNP C11 RAMP VID3 VID3
C14
2 1 280 k 17 44
LLINE VID4 VID4 DNP1 0
R19 0 43
2 2 1
18
C33
2 1
10 mF CSREF VID5 VID5 R70 R69
2 1 19
CSSUM
ADP3212 VID6
42
VID6
V5S
C34 10 mF DNP 1 0
20 LFCSP48 41
2 2 1
C35
2 1
10 mF CSCOMP PSI PSI R72 R71
C12 R14 40
1 1 2 2 1 21
C36
2
10 mF ILIM DPRSLP DPRSLPVR
150p 4.53 k 22 39
C37
2 1
10 mF C13 OD3 PH0
1 2 23 38
C38
2 1
10 mF PWM3 PH1
R26
R25
R24
R52
R63
1.5n
R51
24 37
1
C39
2 1
10 mF SWFB3 VCC
SWFB2
DRVH2
165 k
SWFB1
DRVH1
DRVL2
R21 2
DRVL1
PGND
PVCC
1
100 W
BST2
BST1
SW2
2 1
SW1
C3 1
R66 2
2
C40 10 mF
115 k
115 k
115 k
DNP
DNP
2
DNP
2
2 1 R22 R8
C41 10 mF 1 2
25 1 mF/16 V 10
26
27
28
29
30
31
32
33
34
35
36
1
C42
2 1
10 mF 73.2 k X7R(0805)
1
1
V5S
100 W
100 W
2 1 R23
R61
R62
C43 1 2
10 mF
SW3
PH3_CS+
220kTHERMISTOR 5%
2 1
output inductor of
Place R23 close to
phase 1.
C44 10 mF
2
2
2 1
C45 10 mF
Up to 32 pieces of MLCC, X5R, 0805, 6.3 V.
4.7 mF
1
C15
2 1
C46 10 mF
2
2 1
C47 10 mF
SHORTPIN
2 1
C48 10 mF R33 2 R32 1
2
1
JP11
2
2 1
C49 10 mF C22 0 0
V5S
2 1 1 2 2 1
C50 10 mF 0.47 m C16
2 1 0.47 m
C51 10 mF
5
1
CROWBAR GND
VCC
DRVLSD
2 1
IN
SD
C52 10 mF
ADP3611
2 1
C53 10 mF
U13
2 1
C54 10 mF 4.7 mF/
16 V
DRVH
DRVL
2 4 4
1
BST
C55 10 mF X5R 5
SW
5
6 3 3 6
2 1 (1206) 4 7 2 2 7
C56 10 mF 8 1 1 8 4
C14
10
6
5 5
3 3
C57
2 1
10 mF
2 1 6
7 2 Q9 Q4 2
6
7 Q2
8 1 NTMFS4846N NTMFS4846N 1 8 NTMFS4821N
2 1
C58 10 mF R42 1 Q7
2
2 1
0 NTMFS4821N C101
C59 10 mF 2 1
C78
2 1 2 1
C60 10 mF 1n
NTMFS4821N
4
0.47 m R56 C29 C28 R55 1
C61
2 1
10 mF 5 C102 1 2 1 2 2 1 2 2 1
Q8
3 6 1 2 B A
2 1 2 7
1n DNP DNP DNP DNP C17
C62 10 mF 1 8 4
5 10 mF
2 1 3 6 C23
C63 10 mF Q22 2 7 1 2 1 2 2 1 2 1
NTMFS4821N 1 8
D8 DNP D5 DNP
2 1 10 mF C18
C64 10 mF Q20 10 mF
NTMFS4821N C24 2 1
1 2
10 mF C19
C25 10 mF
C79 R57
4 pieces of Panasonic SP CAP (SD) or Sanyo POSCAP.
2 1 2 1 1 2 2 1
VDC
1
C103
SW2
C
C20
SW1
DNP DNP 10 mF
J8
J9
2 1
10 mF
1n C26
1
2 1 1 2
NEC Tokin MPCG10LR45
1
C651 C21 L2
2 D9 0.45 mH/ESR = 1.1 mW NEC Tokin MPCG10LR45
1
DNP 2 1 10 mF L1
SW3
J26
10 mF
C66 10 10
VDC
2 1 L3 C30 1 2 2 1
0.45 mH/ESR = 2 1
330 mF Note 2 Note 2
1.1 mW
10 mF
2
C67
PH3_CS+
2 1 C31
PH1 VCORE cut
2 1
PH2 VCORE cut
DNP
PH3 VCORE cut
(Optional)
10 mF
(Optional)
C68 1
1
RS1 DNP
RS2 DNP
1
1
CSREF
CSREF
2
JP2
JP3
RS3 DNP
R64 10
C32
1
1
Note 2
VDC
DNP 2 1
JP4
C69
2
2 1 10 mF 1 2 2 1
2
2
2
330 mF 2 1
C70 R31 R30
DNP DNP
DNP
R65
2
Note 3
1
VCORE
CSREF
330 mF
IMVP−6.5 solution for Penryn
processor: 3−phase/55−65 A
VCORE
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23
ADP3212, NCP3218, NCP3218G
Application Information While in DCM, the switching frequency is reduced with the
The design parameters for a typical IMVP−6.5−compliant load current in a linear manner.
CPU core VR application are as follows: To save power with light loads, lower switching frequency
• Maximum input voltage (VINMAX) = 19 V is usually preferred during RPM operation. However, the
• Minimum input voltage (VINMIN) = 8.0 V VCORE ripple specification of IMVP−6.5 sets a limitation
• Output voltage by VID setting (VVID) = 1.05 V for the lowest switching frequency. Therefore, depending on
the inductor and output capacitors, the switching frequency
• Maximum output current (IO) = 52 A in RPM can be equal to, greater than, or less than its
• Droop resistance (RO) = 1.9 mW counterpart in PWM.
• Nominal output voltage at 40 A load (VOFL) = 0.9512 V A resistor from RPM to GND sets the pseudo constant
• Static output voltage drop from no load to full load frequency as following:
(DV) = VONL − VOFL = 1.05 V − 0.9512 V = 98 mV 2 RT A R (1 * D) V VID
R RPM + * 0.5 kW
• Maximum output current step (DIO) = 52 A V VID ) 1.0 V R R C R f SW
(eq. 3)
• Number of phases (n) = 2
• Switching frequency per phase (ƒSW) = 300 kHz where:
• Duty cycle at maximum input voltage (DMAX) = 0.13 V AR is the internal ramp amplifier gain.
• Duty cycle at minimum input voltage (DMIN) = 0.055 V CR is the internal ramp capacitor value.
RR is an external resistor on the RAMPADJ pin to set the
Setting the Clock Frequency for PWM internal ramp magnitude.
In PWM operation, the APD3212/NCP3218/NCP3218G
uses a fixed−frequency control architecture. The frequency Soft Start and Current Limit Latch−Off Delay Times
is set by an external timing resistor (RT). The clock Inductor Selection
frequency and the number of phases determine the switching The choice of inductance determines the ripple current of
frequency per phase, which relates directly to the switching the inductor. Less inductance results in more ripple current,
losses and the sizes of the inductors and input and output which increases the output ripple voltage and the conduction
capacitors. For a dual−phase design, a clock frequency of losses in the MOSFETs. However, this allows the use of
600 kHz sets the switching frequency to 300 kHz per phase. smaller−size inductors, and for a specified peak−to−peak
This selection represents the trade−off between the transient deviation, it allows less total output capacitance.
switching losses and the minimum sizes of the output filter Conversely, a higher inductance results in lower ripple
components. To achieve a 600 kHz oscillator frequency at a current and reduced conduction losses, but it requires
VID voltage of 1.2 V, RT must be 181 kW. Alternatively, the larger−size inductors and more output capacitance for the
value for RT can be calculated by using the following same peak−to−peak transient deviation. For a multi−phase
equation: converter, the practical value for peak−to−peak inductor
ripple current is less than 50% of the maximum dc current
V VID ) 1.0 V
RT + * 16 kW of that inductor. Equation 4 shows the relationship between
2 n f SW 9 pF (eq. 1)
the inductance, oscillator frequency, and peak−to−peak
where: ripple current. Equation 5 can be used to determine the
minimum inductance based on a given output ripple voltage.
9 pF and 16 kW are internal IC component values.
VVID is the VID voltage in volts. V VID (1 * D MIN)
IR + (eq. 4)
n is the number of phases. f SW L
ƒSW is the switching frequency in hertz for each phase.
V VID RO ǒ1 * (n D MIN)Ǔ
For good initial accuracy and frequency stability, it is Lw (eq. 5)
f SW V RIPPLE
recommended to use a 1% resistor.
When VARFREQ pin is connected to ground, the Solving Equation 5 for a 16 mV peak−to−peak output
switching frequency does not change with VID. The value ripple voltage yields:
for RT can be calculated by using the following equation. 1.05 V 1.9 mW (1 * 2 0.055)
Lw + 528 nH
1.0 V 300 kHz 16 mV
RT + * 16 kW
n 2 f SW 9 pF (eq. 2) If the resultant ripple voltage is less than the initially
selected value, the inductor can be changed to a smaller
Setting the Switching Frequency for value until the ripple value is met. This iteration allows
RPM Operation of Phase 1 optimal transient response and minimum output decoupling.
During the RPM operation of Phase 1, the APD3212/ The smallest possible inductor should be used to minimize
NCP3218/NCP3218G runs in pseudoconstant frequency if the number of output capacitors. Choosing a 490 nH
the load current is high enough for continuous current mode. inductor is a good choice for a starting point, and it provides
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ADP3212, NCP3218, NCP3218G
a calculated ripple current of 9.0 A. The inductor should not configured with resistor RPH(x) (summer) and resistors RCS
saturate at the peak current of 24.5 A, and it should be able and CCS (filters). The output resistance of the regulator is set
to handle the sum of the power dissipation caused by the by the following equations:
winding’s average current (20 A) plus the ac core loss. In this R CS
example, 330 nH is used. RO + R SENSE (eq. 6)
R PH(x)
Another important factor in the inductor design is the
DCR, which is used for measuring the phase currents. Too C CS + L
R SENSE R CS (eq. 7)
large of a DCR causes excessive power losses, whereas too
small of a value leads to increased measurement error. For
where RSENSE is the DCR of the output inductors.
this example, an inductor with a DCR of 0.8 mW is used.
Either RCS or RPH(x) can be chosen for added flexibility.
Selecting a Standard Inductor Due to the current drive ability of the CSCOMP pin, the RCS
After the inductance and DCR are known, select a resistance should be greater than 100 kW. For example,
standard inductor that best meets the overall design goals. It initially select RCS to be equal to 200 kW, and then use
is also important to specify the inductance and DCR Equation 7 to solve for CCS:
tolerance to maintain the accuracy of the system. Using 20% 330 nH
tolerance for the inductance and 15% for the DCR at room C CS + + 2.1 nF
0.8 mW 200 kW
temperature are reasonable values that most manufacturers If CCS is not a standard capacitance, RCS can be tuned. For
can meet. example, if the optimal CCS capacitance is 1.5 nF, adjust RCS
Power Inductor Manufacturers to 280 kW. For best accuracy, CCS should be a 5% NPO
The following companies provide surface−mount power capacitor. In this example, a 220 kW is used for RCS to
inductors optimized for high power applications upon achieve optimal results.
request: Next, solve for RPH(x) by rearranging Equation 6 as
• Vishay Dale Electronics, Inc. follows:
(605) 665−9301 0.8 mW
R PH(x) w 220 kW + 83.8 kW
• Panasonic 2.1 mW
(714) 373−7334 The standard 1% resistor for RPH(x) is 86.6 kW.
• Sumida Electric Company
Inductor DCR Temperature Correction
(847) 545−6700
If the DCR of the inductor is used as a sense element and
• NEC Tokin Corporation copper wire is the source of the DCR, the temperature
(510) 324−4110 changes associated with the inductor’s winding must be
compensated for. Fortunately, copper has a well−known
Output Droop Resistance
Temperature Coefficient (TC) of 0.39%/°C.
The design requires that the regulator output voltage
If RCS is designed to have an opposite but equal
measured at the CPU pins decreases when the output current
percentage of change in resistance, it cancels the
increases. The specified voltage drop corresponds to the
temperature variation of the inductor’s DCR. Due to the
droop resistance (RO).
nonlinear nature of NTC thermistors, series resistors RCS1
The output current is measured by summing the currents
and RCS2 (see Figure 30) are needed to linearize the NTC and
of the resistors monitoring the voltage across each inductor
produce the desired temperature coefficient tracking.
and by passing the signal through a low−pass filter. The
summing is implemented by the CS amplifier that is
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ADP3212, NCP3218, NCP3218G
The following procedure and expressions yield values for 6. Calculate values for RCS1 and RCS2 by using the
RCS1, RCS2, and RTH (the thermistor value at 25°C) for a following equations:
given RCS value. R CS1 + R CS k r CS1
1. Select an NTC to be used based on its type and (eq. 10)
R CS2 + R CS ǒ(1 * k) ) (k r CS2)Ǔ
value. Because the value needed is not yet
determined, start with a thermistor with a value For example, if a thermistor value of 100 kW is selected
close to RCS and an NTC with an initial tolerance in Step 1, an available 0603−size thermistor with a value
of better than 5%. close to RCS is the Vishay NTHS0603N04 NTC thermistor,
2. Find the relative resistance value of the NTC at which has resistance values of A = 0.3359 and B = 0.0771.
two temperatures. The appropriate temperatures Using the equations in Step 4, rCS1 is 0.359, rCS2 is 0.729,
will depend on the type of NTC, but 50°C and and rTH is 1.094. Solving for rTH yields 241 kW, so a
90°C have been shown to work well for most types thermistor of 220 kW would be a reasonable selection,
of NTCs. The resistance values are called A (A is making k equal to 0.913. Finally, RCS1 and RCS2 are found
RTH(50°C)/RTH(25°C)) and B (B is to be 72.1 kW and 166 kW. Choosing the closest 1% resistor
RTH(90°C)/RTH(25°C)). Note that the relative for RCS2 yields 165 kW. To correct for this approximation,
value of the NTC is always 1 at 25°C. 73.3 kW is used for RCS1.
3. Find the relative value of RCS required for each of
the two temperatures. The relative value of RCS is COUT Selection
based on the percentage of change needed, which The required output decoupling for processors and
is initially assumed to be 0.39%/°C in this platforms is typically recommended by Intel. For systems
example. containing both bulk and ceramic capacitors, however, the
The relative values are called r1 (r1 is 1/(1+ TC × following guidelines can be a helpful supplement.
(T1 − 25))) and r2 (r2 is 1/(1 + TC × (T2 − 25))), Select the number of ceramics and determine the total
where TC is 0.0039, T1 is 50°C, and T2 is 90°C. ceramic capacitance (CZ). This is based on the number and
4. Compute the relative values for rCS1, rCS2, and rTH type of capacitors used. Keep in mind that the best location
by using the following equations: to place ceramic capacitors is inside the socket; however, the
physical limit is twenty 0805−size pieces inside the socket.
(A−B) r 1 r 2 * A (1−B) r 2 ) B (1−A) r 1
r CS2 +
A (1 * B) r 1 * B (1 * A) r 2 * (A * B)
Additional ceramic capacitors can be placed along the outer
edge of the socket. A combined ceramic capacitor value of
(1 * A)
r CS1 + (eq. 8)
200 mF to 300 mF is recommended and is usually composed
1 A
*
1*r CS2 r1*r CS2 of multiple 10 mF or 22 mF capacitors.
Ensure that the total amount of bulk capacitance (CX) is
r TH + 1 within its limits. The upper limit is dependent on the VID
1 * 1 OTF output voltage stepping (voltage step, VV, in time, tV,
1*rCS2 rCS1
with error of VERR); the lower limit is based on meeting the
5. Calculate RTH = rTH × RCS, and then select a critical capacitance for load release at a given maximum load
thermistor of the closest value available. In step, DIO. The current version of the IMVP−6.5
addition, compute a scaling factor k based on the specification allows a maximum VCORE overshoot
ratio of the actual thermistor value used relative to (VOSMAX) of 10 mV more than the VID voltage for a
the computed one: step−off load current.
R TH(ACTUAL)
k+
R TH(CALCULATED)
(eq. 9) ȡ ȣ
wȧ * C ȧ (eq. 11)
L DI O
C X(MIN)
ȧn ǒ VOSMAX
Ǔ ȧ Z
Ȣ RO )
DIO
V VID
Ȥ
C X(MAX) v
n k2
L
RO 2
VV
V VID
ȡ
ȧ
Ȣ
Ǹ ǒ V
1 ) t v VID
VV
n k
L
RO
Ǔ
2
ȣ
ȧ
* 1 * CZ
Ȥ
where k + − ln ǒ Ǔ
V ERR
VV
(eq. 12)
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ADP3212, NCP3218, NCP3218G
To meet the conditions of these expressions and the the APD3212/NCP3218/NCP3218G, currents are balanced
transient response, the ESR of the bulk capacitor bank (RX) between phases; the current in each low−side MOSFET is
should be less than two times the droop resistance, RO. If the the output current divided by the total number of MOSFETs
CX(MIN) is greater than CX(MAX), the system does not meet (nSF). With conduction losses being dominant, the following
the VID OTF and/or the deeper sleep exit specifications and expression shows the total power that is dissipated in each
may require less inductance or more phases. In addition, the synchronous MOSFET in terms of the ripple current per
switching frequency may have to be increased to maintain phase (IR) and the average total output current (IO):
ƪǒ Ǔ Ǔƫ
the output ripple.
ǒ
2 2
For example, if 30 pieces of 10 mF, 0805−size MLC IO n IR
P SF + (1−D) n SF ) 1 n SF R DS(SF)
capacitors (CZ = 300 mF) are used, the fastest VID voltage 12
change is when the device exits deeper sleep, during which (eq. 14)
the VCORE change is 220 mV in 22 ms with a setting error of
10 mV. If k = 3.1, solving for the bulk capacitance yields where:
C X(MIN) w D is the duty cycle and is approximately the output voltage
divided by the input voltage.
ȡ ȣ IR is the inductor peak−to−peak ripple current and is
ȧ 330 nH 27.9 A
* 300 mFȧ+ 1.0 mF approximately
ǒǸ Ǔ
required RDS(ON) for the MOSFET. For 8−lead SOIC or
ǒ Ǔ
2
22ms 1.4375V 2 3.1 2.1mW 8−lead SOIC compatible MOSFETs, the junction−to−
1) −1 −300 mF
220 mV 490 nH ambient (PCB) thermal impedance is 50°C/W. In the worst
case, the PCB temperature is 70°C to 80°C during heavy
+ 21 mF load operation of the notebook, and a safe limit for PSF is
Using six 330 mF Panasonic SP capacitors with a typical about 0.8 W to 1.0 W at 120°C junction temperature.
ESR of 7 mW each yields CX = 1.98 mF and RX = 1.2 mW. Therefore, for this example (40 A maximum), the RDS(SF) per
Ensure that the ESL of the bulk capacitors (LX) is low MOSFET is less than 8.5 mW for two pieces of low−side
enough to limit the high frequency ringing during a load MOSFETs. This RDS(SF) is also at a junction temperature of
change. This is tested using: about 120°C; therefore, the RDS(SF) per MOSFET should be
less than 6 mW at room temperature, or 8.5 mW at high
LX v CZ RO 2 Q2
(eq. 13) temperature.
L X v 300 mF (2.1 mW) 2 2 + 2 nH Another important factor for the synchronous MOSFET
where: is the input capacitance and feedback capacitance. The ratio
of the feedback to input must be small (less than 10% is
Q is limited to the square root of 2 to ensure a critically
recommended) to prevent accidentally turning on the
damped system.
synchronous MOSFETs when the switch node goes high.
LX is about 150 pH for the six SP capacitors, which is low
The high−side (main) MOSFET must be able to handle
enough to avoid ringing during a load change. If the LX of
two main power dissipation components: conduction losses
the chosen bulk capacitor bank is too large, the number of
and switching losses. Switching loss is related to the time for
ceramic capacitors may need to be increased to prevent
the main MOSFET to turn on and off and to the current and
excessive ringing.
voltage that are being switched. Basing the switching speed
For this multimode control technique, an all ceramic
on the rise and fall times of the gate driver impedance and
capacitor design can be used if the conditions of
MOSFET input capacitance, the following expression
Equations 11, 12, and 13 are satisfied.
provides an approximate value for the switching loss per
Power MOSFETs main MOSFET:
For typical 20 A per phase applications, the N−channel V DC I O n MF
power MOSFETs are selected for two high−side switches P S(MF) + 2 f SW n MF RG n C ISS
and two or three low−side switches per phase. The main (eq. 15)
selection parameters for the power MOSFETs are VGS(TH),
where:
QG, CISS, CRSS, and RDS(ON). Because the voltage of the
gate driver is 5.0 V, logic−level threshold MOSFETs must be nMF is the total number of main MOSFETs.
used. RG is the total gate resistance.
The maximum output current, IO, determines the RDS(ON) CISS is the input capacitance of the main MOSFET.
requirement for the low−side (synchronous) MOSFETs. In
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27
ADP3212, NCP3218, NCP3218G
The most effective way to reduce switching loss is to use RDS is the total low−side MOSFET on resistance.
lower gate capacitance devices. CR is the internal ramp capacitor value.
The conduction loss of the main MOSFET is given by the Another consideration in the selection of RR is the size of
following equation: the internal ramp voltage (see Equation 19). For stability and
ƪǒ Ǔ Ǔƫ
noise immunity, keep the ramp size larger than 0.5 V. Taking
ǒ
2 2
IO n IR this into consideration, the value of RR in this example is
P C(MF) + D n MF ) 1 n MF R DS(MF)
12 selected as 280 kW.
(eq. 16) The internal ramp voltage magnitude can be calculated as
follows:
where RDS(MF) is the on resistance of the MOSFET.
A R (1 * D) V VID
Typically, a user wants the highest speed (low CISS) VR +
R R C R f SW (eq. 19)
device for a main MOSFET, but such a device usually has
higher on resistance. Therefore, the user must select a device 0.5 (1 * 0.061) 1.150 V
VR + + 0.83 V
that meets the total power dissipation (about 0.8 W to 1.0 W 462 kW 5 pF 280 kHz
for an 8−lead SOIC) when combining the switching and The size of the internal ramp can be increased or
conduction losses. decreased. If it is increased, stability and transient response
For example, an IRF7821 device can be selected as the improves but thermal balance degrades. Conversely, if the
main MOSFET (four in total; that is, nMF = 4), with ramp size is decreased, thermal balance improves but
approximately stability and transient response degrade. In the denominator
CISS = 1010 pF (maximum) and RDS(MF) = 18 mW of Equation 18, the factor of 3 sets the minimum ramp size
(maximum at TJ = 120°C), and an IR7832 device can be that produces an optimal combination of good stability,
selected as the synchronous MOSFET (four in total; that is, transient response, and thermal balance.
nSF = 4), with
RDS(SF) = 6.7 mW (maximum at TJ = 120°C). Solving for the Current Limit Setpoint
power dissipation per MOSFET at IO = 40 A and IR = 9.0 A To select the current limit setpoint, the resistor value for
yields 630 mW for each synchronous MOSFET and RCLIM must be determined. The current limit threshold for
590 mW for each main MOSFET. A third synchronous the APD3212/NCP3218/NCP3218G is set with RCLIM.
MOSFET is an option to further increase the conversion RCLIM can be found using the following equation:
efficiency and reduce thermal stress. I LIM R O
R LIM + (eq. 20)
Finally, consider the power dissipation in the driver for 60 mA
each phase. This is best described in terms of the QG for the where:
MOSFETs and is given by the following equation: RLIM is the current limit resistor.
P DRV + ƪ 2
f SW
n
(n MF Q GMF ) n SF ƫ
Q GSF) ) I CC VCC
RO is the output load line.
ILIM is the current limit setpoint.
(eq. 17) When the APD3212/NCP3218/NCP3218G is configured
for 3 phase operation, the equation above is used to set the
where QGMF is the total gate charge for each main
current limit. When the APD3212/NCP3218/NCP3218G
MOSFET, and QGSF is the total gate charge for each
switches from 3 phase to 1 phase operation by PSI or
synchronous MOSFET.
DPRSLP signal, the current is single phase is one third of the
The previous equation also shows the standby dissipation
current limit in 3 phase.
(ICC times the VCC) of the driver.
When the APD3212/NCP3218/NCP3218G is configured
Ramp Resistor Selection for 2 phase operation, the equation above is used to set the
The ramp resistor (RR) is used to set the size of the internal current limit. When the APD3212/NCP3218/NCP3218G
PWM ramp. The value of this resistor is chosen to provide switches from 2 phase to 1 phase operation by PSI or
the best combination of thermal balance, stability, and DPRSLP signal, the current is single phase is one half of the
transient response. Use the following expression to current limit in 2 phase.
determine a starting value: When the APD3212/NCP3218/NCP3218G is configured
for 1 phase operation, the equation above is used to set the
AR L
RR + current limit.
3 A D R DS CR
(eq. 18)
0.5 360 nH Current Monitor
RR + + 462 kW The APD3212/NCP3218/NCP3218G has output current
3 5 5.2 mW 5 pF
monitor. The IMON pin sources a current proportional to the
where: total inductor current. A resistor, RMON, from IMON to
AR is the internal ramp amplifier gain. FBRTN sets the gain of the output current monitor. A 0.1 mF
AD is the current balancing amplifier gain. is placed in parallel with RMON to filter the inductor current
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28
ADP3212, NCP3218, NCP3218G
ripple and high frequency load transients. Since the IMON Gain
pin is connected directly to the CPU, it is clamped to prevent
it from going above 1.15 V.
−20 dB/dec
The IMON pin current is equal to the RLIM times a fixed
gain of 4. RMON can be found using the following equation:
1.15 V R LIM
R MON + (eq. 21)
4 R O I FS −20 dB/dec
where:
RMON is the current monitor resistor. RMON is connected
from IMON pin to FBRTN. 0 dB
RLIM is the current limit resistor. fZ1 fP0 fP1 fZ2 Frequency
RO is the output load line resistance.
IFS is the output current when the voltage on IMON is at full Figure 32. Poles and Zeros of Voltage Error Amplifier
scale. The following equations give the locations of the poles
and zeros shown in Figure 32:
Feedback Loop Compensation Design
f Z1 + 1
Optimized compensation of the APD3212/NCP3218/ 2p CA RA
(eq. 22)
NCP3218G allows the best possible response of the
regulator’s output to a load change. The basis for f Z2 + 1 (eq. 23)
determining the optimum compensation is to make the 2p C FB R FB
regulator and output decoupling appear as an output 1
f P0 + (eq. 24)
impedance that is entirely resistive over the widest possible 2p (C A ) C B) R FB
frequency range, including dc, and that is equal to the droop
resistance (RO). With the resistive output impedance, the CA ) CB
f P1 + (eq. 25)
output voltage droops in proportion with the load current at 2p RA CB CA
any load current slew rate, ensuring the optimal position and The expressions that follow compute the time constants
allowing the minimization of the output decoupling. for the poles and zeros in the system and are intended to yield
With the multimode feedback structure of the an optimal starting point for the design; some adjustments
APD3212/NCP3218/NCP3218G, it is necessary to set the may be necessary to account for PCB and component
feedback compensation so that the converter’s output parasitic effects (see the Tuning Procedure for 12 section):
impedance works in parallel with the output decoupling. In R L V RT
addition, it is necessary to compensate for the several poles RE + n RO ) AD R DS ) )
V VID
and zeros created by the output inductor and decoupling (eq. 26)
2 L (1 * (n D)) V RT
capacitors (output filter).
A Type III compensator on the voltage feedback is n C X R O V VID
adequate for proper compensation of the output filter. LX R O * RȀ
Figure 31 shows the Type III amplifier used in the TA + CX (R O * RȀ) ) (eq. 27)
RO RX
APD3212/NCP3218/NCP3218G. Figure 32 shows the
locations of the two poles and two zeros created by this T B + (R X ) RȀ * R O) CX (eq. 28)
amplifier.
VOLTAGE ERROR
AMPLIFIER
REFERENCE
V RT ǒ L*
AD RDS
2 f SW
Ǔ
VOLTAGE TC + (eq. 29)
V VID RE
CX CZ RO 2
FB ADP3212 TD + (eq. 30)
COMP CX (R O * RȀ) ) C Z RO
where:
CFB OUTPUT
CA
RA VOLTAGE R′ is the PCB resistance from the bulk capacitors to the
ceramics and is approximately 0.4 mW (assuming an 8−layer
CB RFB motherboard).
RDS is the total low−side MOSFET for on resistance per
phase.
Figure 31. Voltage Error Amplifier
AD is 5.
VRT is 1.25 V.
LX is 150 pH for the six Panasonic SP capacitors.
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ADP3212, NCP3218, NCP3218G
I CRMS + 0.18 40 A Ǹ2 1
0.18
* 1 + 9.6 A
R RTTSET1
TTSNS
where IO is the output current.
RTH1
In a typical notebook system, the battery rail decoupling CTT
R
is achieved by using MLC capacitors or a mixture of MLC ADP3212
capacitors and bulk capacitors. In this example, the input
capacitor bank is formed by eight pieces of 10 mF, 25 V MLC Figure 33. Single−Point Thermal Monitoring
capacitors, with a ripple current rating of about 1.5 A each.
To monitor the temperature of multiple−point hot spots,
RC Snubber use the configuration shown in Figure 34. If any of the
It is important in any buck topology to use a monitored hot spots reaches the alarm temperature, the
resistor−capacitor snubber across the low side power VRTT signal is asserted. The following calculation sets the
MOSFET. The RC snubber dampens ringing on the switch alarm temperature:
node when the high side MOSFET turns on. The switch node VFD
ringing could cause EMI system failures and increased 1ń2 ) (eq. 39)
VREF
stress on the power components and controller. The RC R TTSET1 + R TH1AlarmTemperature
VFD
snubber should be placed as close as possible to the low side 1ń2 *
VREF
MOSFET. Typical values for the resistor range from 1 W to
10 W. Typical values for the capacitor range from 330 pF to where VFD is the forward drop voltage of the parallel diode.
4.7 nF. The exact value of the RC snubber depends on the Because the forward current is very small, the forward
PCB layout and MOSFET selection. Some fine tuning must drop voltage is very low, that is, less than 100 mV. Assuming
be done to find the best values. The equation below is used the same conditions used for the single−point thermal
to find the starting values for the RC subber. monitoring example—that is, an alarm temperature of
1 100°C and use of an NTHS−0603N011003J Vishay
R Snubber + (eq. 36)
2 p f Ringing C OSS thermistor—solving Equation 39 gives a RTTSET of 7.37 kW,
and the closest standard resistor is 7.32 kW (1%).
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ADP3212, NCP3218, NCP3218G
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ADP3212, NCP3218, NCP3218G
General Recommendations
1. For best results, use a PCB of four or more layers.
VTRAN1 VTRAN2
This should provide the needed versatility for
control circuitry interconnections with optimal
placement; power planes for ground, input, and
output; and wide interconnection traces in the rest
Figure 36. Transient Setting Waveform, Load Step
of the power delivery current paths. Keep in mind
2. If both overshoots are larger than desired, try the that each square unit of 1 oz copper trace has a
following adjustments in the order shown. resistance of ~0.53 mW at room temperature.
a. Increase the resistance of the ramp resistor 2. When high currents must be routed between PCB
(RRAMP) by 25%. layers, vias should be used liberally to create
b. For VTRAN1, increase CB or increase the switching several parallel current paths so that the resistance
frequency. and inductance introduced by these current paths is
minimized and the via current rating is not
c. For VTRAN2, increase RA by 25% and decrease CA
exceeded.
by 25%.
3. If critical signal lines (including the output voltage
If these adjustments do not change the response, it is
sense lines of the APD3212/NCP3218/
because the system is limited by the output
NCP3218G) must cross through power circuitry, it
decoupling. Check the output response and the
is best if a signal ground plane can be interposed
switching nodes each time a change is made to
between those signal lines and the traces of the
ensure that the output decoupling is stable.
power circuitry. This serves as a shield to
3. For load release (see Figure 37), if VTRANREL is
minimize noise injection into the signals at the
larger than the value specified by IMVP−6.5, a
expense of increasing signal ground noise.
greater percentage of output capacitance is needed.
4. An analog ground plane should be used around
Either increase the capacitance directly or decrease
and under the APD3212/NCP3218/NCP3218G for
the inductor values. (If inductors are changed,
referencing the components associated with the
however, it will be necessary to redesign the
controller. This plane should be tied to the nearest
circuit using the information from the spreadsheet
ground of the output decoupling capacitor, but
and to repeat all tuning guide procedures).
should not be tied to any other power circuitry to
prevent power currents from flowing into the
plane.
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ADP3212, NCP3218, NCP3218G
5. The components around the APD3212/NCP3218/ the liberal use of vias, both directly on the
NCP3218G should be located close to the mounting pad and immediately surrounding it, is
controller with short traces. The most important recommended. Two important reasons for this are
traces to keep short and away from other traces are improved current rating through the vias and
those to the FB and CSSUM pins. Refer to improved thermal performance from vias extended
Figure 30 for more details on the layout for the to the opposite side of the PCB, where a plane can
CSSUM node. more readily transfer heat to the surrounding air.
6. The output capacitors should be connected as close To achieve optimal thermal dissipation, mirror the
as possible to the load (or connector) that receives pad configurations used to heat sink the MOSFETs
the power (for example, a microprocessor core). If on the opposite side of the PCB. In addition,
the load is distributed, the capacitors should also improvements in thermal performance can be
be distributed and generally placed in greater obtained using the largest possible pad area.
proportion where the load is more dynamic. 3. The output power path should also be routed to
7. Avoid crossing signal lines over the switching encompass a short distance. The output power path
power path loop, as described in the Power is formed by the current path through the inductor,
Circuitry section. the output capacitors, and the load.
8. Connect a 1 mF decoupling ceramic capacitor from 4. For best EMI containment, a solid power ground
VCC to GND. Place this capacitor as close as plane should be used as one of the inner layers and
possible to the controller. Connect a 4.7 mF extended under all power components.
decoupling ceramic capacitor from PVCC to
PGND. Place capacitor as close as possible to the Signal Circuitry
controller. 1. The output voltage is sensed and regulated
between the FB and FBRTN pins, and the traces of
Power Circuitry these pins should be connected to the signal
1. The switching power path on the PCB should be ground of the load. To avoid differential mode
routed to encompass the shortest possible length to noise pickup in the sensed signal, the loop area
minimize radiated switching noise energy (that is, should be as small as possible. Therefore, the FB
EMI) and conduction losses in the board. Failure and FBRTN traces should be routed adjacent to
to take proper precautions often results in EMI each other, atop the power ground plane, and back
problems for the entire PC system as well as to the controller.
noise−related operational problems in the 2. The feedback traces from the switch nodes should
power−converter control circuitry. The switching be connected as close as possible to the inductor.
power path is the loop formed by the current path The CSREF signal should be Kelvin connected to
through the input capacitors and the power the center point of the copper bar, which is the
MOSFETs, including all interconnecting PCB VCORE common node for the inductors of all the
traces and planes. The use of short, wide phases.
interconnection traces is especially critical in this 3. On the back of the APD3212/NCP3218/
path for two reasons: it minimizes the inductance NCP3218G package, there is a metal pad that can
in the switching loop, which can cause high energy be used to heat sink the device. Therefore, running
ringing, and it accommodates the high current vias under the APD3212/NCP3218/NCP3218G is
demand with minimal voltage loss. not recommended because the metal pad may
2. When a power−dissipating component (for cause shorting between vias.
example, a power MOSFET) is soldered to a PCB,
ORDERING INFORMATION
Device Number* Temperature Range Package Package Option Shipping†
ADP3212MNR2G −40°C to 100°C 48−Lead Frame Chip Scale Pkg [QFN_VQ] CP−48−1 2500 / Tape & Reel
7x7 mm, 0.5 mm pitch
NCP3218MNR2G −40°C to 100°C 48−Lead Frame Chip Scale Pkg [QFN_VQ] CP−48−1 2500 / Tape & Reel
6x6 mm, 0.4 mm pitch
NCP3218MNTWG −40°C to 100°C 48−Lead Frame Chip Scale Pkg [QFN_VQ] CP−48−1 2500 / Tape & Reel
6x6 mm, 0.4 mm pitch
NCP3218GMNR2G −40°C to 100°C 48−Lead Frame Chip Scale Pkg [QFN_VQ] CP−48−1 2500 / Tape & Reel
6x6 mm, 0.4 mm pitch
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
*The “G’’ suffix indicates Pb−Free package.
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ADP3212, NCP3218, NCP3218G
PACKAGE DIMENSIONS
ÈÈÈ
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO THE PLATED
PIN 1
ÈÈÈ
TERMINAL AND IS MEASURED ABETWEEN
LOCATION
0.15 AND 0.30 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
E MILLIMETERS
DIM MIN MAX
A 0.80 1.00
A1 0.00 0.05
2X L A3 0.20 REF
0.15 C b 0.20 0.30
D 7.00 BSC
2X DETAIL A D2 5.00 5.20
OPTIONAL CONSTRUCTION E 7.00 BSC
0.15 C TOP VIEW 2X SCALE E2 5.00 5.20
e 0.50 BSC
K 0.20 −−−
(A3) L 0.30 0.50
0.05 C
A
0.08 C A1
NOTE 4 SEATING
SIDE VIEW C PLANE
1
E2
2X 7.30
48X
1 36
0.63
48 37
e 48X b
48X L
e/2 0.10 C A B
48X
0.05 C NOTE 3 0.30 0.50 PITCH
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
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ADP3212, NCP3218, NCP3218G
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ÉÉÉÉ
D A B L L ASME Y14.5M, 1994.
2. CONTROLLING DIMENSIONS: MILLIMETERS.
ÉÉÉÉ
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
PIN ONE L1 0.15 AND 0.30mm FROM TERMINAL TIP
ÉÉÉÉ
LOCATION
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
ÉÉÉÉ
DETAIL A
MILLIMETERS
E ALTERNATE TERMINAL
DIM MIN MAX
CONSTRUCTIONS
A 0.80 1.00
ÉÉÉ
A1 0.00 0.05
2X 0.10 C A3 0.20 REF
EXPOSED Cu MOLD CMPD b 0.15 0.25
ÉÉÉ
D 6.00 BSC
2X 0.10 C TOP VIEW D2 4.40 4.60
E 6.00 BSC
A E2 4.40 4.60
(A3) DETAIL B e 0.40 BSC
0.10 C DETAIL B K 0.20 MIN
ALTERNATE
CONSTRUCTION L 0.30 0.50
L1 0.00 0.15
0.08 C A1
NOTE 4 SIDE VIEW C SEATING SOLDERING FOOTPRINT*
PLANE
6.40 48X
D2 K
DETAIL A 4.66 0.68
13
25
E2
4.66 6.40
48X L
1
48 37
e 48X b
e/2 0.07 C A B PKG
OUTLINE
BOTTOM VIEW 0.40 48X
0.05 C NOTE 3 PITCH 0.25
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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