Tutorial 1

Ques No1: Fill In the Blank(S) With the Appropriate Word(S)

1) Turn OFF process in a BJT is associated with transition from the _______________
region to the ______________ region.

2) Negative _______________ current is required to remove excess charge carriers from the
______________ region of a BJT during Turn OFF process.

3) VCE increases rapidly in the ________________ region.

4) BJT has large switching times, since it is a _________________ carrier device.

5) BJT has _______________ ON state voltage drop.

6) BJT is inefficient at ______________ switching frequencies.

7) Turn OFF snubber circuit is used to improve _______________ withstand capacity of a

BJT.

8) Forward break over voltage of a thyristor decreases with increase in the ---------------
current.

9) Reverse ________________ voltage of a thyristor is ________________ of the gate

current.

10) Reverse saturation current of a thyristor ________________ with gate current.

11) In the pulsed gate current triggering of a thyristor the gate current pulse width should
be larger than the ________________ time of the device.

12) To prevent unwanted turn ON of a thyristor all spurious noise signals between the gate
and the cathode must be less than the gate ________________ voltage.
13) Peak non-repetitive over voltage may appear across a thyristor due to
________________ or ________________ surges in a supply network.

14) VRSM rating of a thyristor is greater than the ________________ rating but less than the
________________ rating.

15) Maximum average current a thristor can carry depends on the ________________ of the
thyristor and the ________________ of the current wave form.

16) The ISM rating of a thyristor applies to current waveforms of duration ________________
than half cycle of the power frequency where as the ∫i 2dt rating applies to current
durations ________________ than half cycle of the power frequency.

17) The gate non-trigger voltage specification of a thyristor is useful for avoiding unwanted
turn on of the thyristor due to ________________ voltage signals at the gate.

18) A thyristor is turned on by applying a ________________ gate current pulse when it is

________________ biased.

19) Total turn on time of a thyristor can be divided into ________________ time
________________ time and ________________ time.

20) During rise time the rate of rise of anode current should be limited to avoid creating local
________________.

21) A thyristor can be turned off by bringing its anode current below ________________
current and applying a reverse voltage across the device for duration larger than the
________________ time of the device.

22) Reverse recovery charge of a thyristor depends on the ________________ of the forward
current just before turn off and its ________________.

23) Inverter grade thyristors have ________________ turn off time compared to a converter
grade thyristor.
 24) A Triac is a ________________ minority carrier device
25) A Triac behaves like two ________________ connected thyristors.

26) The gate sensitivity of a Triac is maximum when the gate is ________________ with
respect to MT1 while MT2 is positive with respect to MT1 or the gate is
________________ with respect to MT1 while MT2 is negative with respect to MT1
27) A Triac operates either in the ________________ or the ________________ quadrant of
the i-v characteristics.
28) In the ________________ quadrant the Triac is fired with ________________ gate
current while in the ________________ quadrant the gate current should be
________________.

29) The maximum possible voltage and current rating of a Triac is considerably
________________ compared to thyristor due to ________________ of the two current
carrying paths inside the structure of the Triac.

Ques No 2: Which Is The Power Semiconductor Device Having?

a) Highest switching speed
b) Highest voltage / current ratings
c) Easy drive features
d) Can be most effectively paralleled
e) Can be protected against over-currents with a fuse
f) Gate-turn off capability with regenerative features
g) Easy drive and High power handling capability

ANSWER
Answer: 1. Saturation, Cut-off
2. Base, base
 3. Active
4. Minority
5. Low
6. High
7. Voltage
8. Gate
9. break down, independent
10. Increases
11. Turn ON
12. Non- trigger.
13. Switching, lightning
14. VRRM, VBRR
15. Case temperature, conduction angle;
16. greater, less
17. Noise
18. positive, forward;
19. Delay, rise, spread;
20. Hot spots
21. Holding, turn off;
22. Magnitude, rate of decrease
23. Faster
24. Bidirectional
25. Anti parallel;
26. positive, negative
27. First, third
28. first, positive, third, negative
29. Lower, interaction

Ans 2: a) MOSFET b) SCR c) MOSFET d) MOSFET e) SCR (f) GTO (g) IGBT