RESISTANCE LEVELS 37

The operating point of a diode moves from one region to another

the resistance of the diode will also change
g due to the non-linear
shape of the characteristic curve.

i. DC or Static Resistance
ii AC or Dynamic
ii. i Resistance
i
iii. Average AC Resistance
 DC or Static Resistance
38

 The application of a dc voltage to a circuit containing a semiconductor

diode will result in an operating point on the characteristic curve that will not
change with time.
 The resistance of the diode at the operating point can be found simply by
finding the corresponding levels of VD and ID.

Higher the current through a diode, RD=VD/ID

the lower is the dc resistance level

Determining the dc resistance of a diode at a particular operating point.

 39
Example 1.2. Determine the dc resistance level for the diode

a)) ID=2mA(low
2 A(l level)
l l)
b) ID=25mA(high level)
c) VD= -10V(reverse-biased)

RD=VD/ID

a. RD =250 Ω

b RD =34
b. 34 Ω

c. RD =10 MΩ
 AC or Dynamic Resisitance
40

The varying input will move the instantaneous operating point

up and down a region of the characteristics and thus defines a
specific
ifi change
h i currentt andd voltage.
in lt
With no applied varying signal, the point of operation would be
the Q-point appearing.

The lower Q-point of rd= ∆Vd/∆Id

operation
ti (smaller
( ll currentt or
lower voltage), the higher is
the resistance.
 AC or Dynamic Resistance

rd= ∆V
Vd//∆Id

4
1
 42
Example 1.3.
a) Determine the ac resistance at ID=2mA
b) Determine
D i theh ac resistance
i at ID=25mA
25 A
c) Compare the results of part (a) and (b) to
the dc resistances at each current level.

rd= ∆Vd/∆Id
a. ∆Id = 4mA - 0mA = 4mA
∆Vd = 0.76V
0 76V - 0.65V
0 65V = 0.11V
0 11V
rd =27.5 Ω

bb. ∆Id = 30mA - 20mA = 10mA

∆Vd = 0.8V - 0.78V= 0.02V
rd = 2 Ω

c)RD = VD / ID= 0.7V/2mA

=350 Ω
RD = VD / ID = 0.79V/25mA = 31.62 Ω
 AC or Dynamic Resistance
43

The derivative of a function at a point is equal to the slope

of the tangent line drawn at that point.
 44

The dynamic resistance can be found simply by substituting the

quiescent value of the diode current into the equation.

Where rB is the (body resistance + contact resistance)

Contribution of rB
25 A  rD=26mV/I
If ID = 25mA 26 V/ID=26mV/25mA=1.04
26 V/25 A 1 04 Ω
As
rD =2 Ω
The difference of 1Ω could be treated as contribution of rB.
 Average AC Resistance 45

If the input signal is sufficiently large to produce a broad swing , the

resistance associated with the device for this region is called the average ac
resistance.

The resistance
determined by a
straight line drawn
between intersection
established by the
max and min values of
the input voltage.

Determining the average ac resistance between indicated limits.

Summary  Resistance Levels 46
Home work
P-25 to 33

4
7
DIODE EQUIVALENT CIRCUITS
48

An equivalent circuit is a combination of elements properly

chosen to best represent
p the actual terminal characteristics of
a device or system in a particular operating region.

Once the equivalent circuit is defined, the device symbol

can be removed from a schematic and the equivalent circuit
inserted in its place without severely affecting the actual
behavior of the system.

ii. Piecewise-Linear
Pi i Li E i l t Circuit
Equivalent Ci it
ii. Simplified Equivalent Circuit
iii. Ideal Equivalent Circuit
 Piecewise-Linear Equivalent Circuit 49

An equivalent circuit for a diode to approximate the characteristics of

the device by straight-line segment, is called a piecewise-linear
equivalent circuit.
circuit
Piecewise-Linear Equivalent Circuit 50

Components of the piecewise-linear equivalent circuit.

 Simplified Equivalent Circuit 51

The resistance rav is sufficiently small to be ignored in comparison

to the other elements of the network.

Simplified equivalent circuit for the silicon semiconductor diode

diode.
 52
Ideal Equivalent Circuit
If 0.7 V level can be ignored in comparison to the applied
voltage level.

Ideal diode and its characteristics.

characteristics
Summary Table

5
3
 TRANSITION AND DIFFUSION
CAPACITANCE
Every electronic device is frequency sensitive.

Xc=1/2πfC XL=2πfL
In the reverse-bias region we have the transition or depletion
region capacitance (CT), where in the forward bias region we
have the diffusion (CD) or storage capacitance.
capacitance

C= εA/d capacitance
p

Q I (V )
CD  
V V
5
4
TRANSITION AND DIFFUSION 55

CAPACITANCE

Transition and diffusion capacitance versus applied bias for a

silicon
ili di
diode
d
REVERSE RECOVERY TIME
56

Recovery time=
Storage time=
Transition time =
 57

Home work
P-34 to 40