28

Common-Emitter Configuration
g
 IE  IC  I B & I C  αI E

I C  I Cmajority  I COminority

I C  αI E  I CBO
I C  α I C  I B   I CBO

 IB ICBO
IC  
1 1
When IB = 0 A the transistor is in cutoff, but there is some minority
current flowing called ICEO.
I CBO
IC I CEO  I B  0 μA
1
 29

Common-Emitter
Common Emitter Configuration

Circuit conditions related to ICEO

Approximate
A i equivalent
i l for f the
h
Transistor characteristics.
 30

Beta (β)
 represents the current amplification factor of a transistor.
IC
 dc 
IB
In the dc mode  is sometimes referred to as hFE, the term FE is
derived from Forward Current amplification and common-Emitter
configuration
g
IC
ac 
IB VCE  constant

The formal name for βac is forward-current, common-emitter,

amplification
lifi ti factor(h
f t (hfe).
)
 31

Beta (β)

IC 2.7mA
 dc    108
IB 25 A

IC
ac 
IB VCE  constant

IC 2  IC 1 3.2m  2.2m 1mA

 ac     100
IB 2  IB1 30   20 10 A

Determining βac and βdc from the collector characteristics.

 32

Beta (β)

 IC 9mA  7 mA 2mA
 ac     200
IB 45 A  35A 10A

IC 8mA
 dc    200
IB 40A

Characteristics in which βac is the same everywhere and βac = βdc.

 33

Beta (β)
IE  IC  IB IC IC
 IC 
 
1 1
 1 
 
 


1  1

I C  βIB I E  (β  1)I B

I CBO
I CEO  1
1
1
  1 I CEO  (   1)I CBO I CEO   I CBO
 34

Biasing
g

The proper biasing of a common-emitter amplifier can be

determined in a manner similar to that introduced for the common-
base configuration for the npn transistor.

Determining the proper biasing arrangement for a common-emitter npn transistor configuration.
 35

Common-Collector Configuration
g

Notation and symbols used with the common-collector configuration: (a) pnp transistor; (b) npn
transistor.
 36

Common-Collector
Common Collector Configuration

Common-collector configuration used for impedance-matching

purposes.
 37

Limits of Operation
p
 For common-emitter characteristics, the maximum dissipation
level is defined by:

PC max  VCE I C
 The transistor operates in the active region between saturation
and cutoff.
 IC and VCE must be in and their product must fall in following
range:
Cut off region
Cut-off ICEO I I
C C max

Saturation region VCE sat  VCE  VCE max

VCE I C  PC max
 38

Limits of Operation
p
PC max  VCE I C
300 mW
VCE   6V
50 mA
PC max  VCE I C
300 mW
IC   15mA
20V

PC max  VCE I C
300 mW
VCE   12V
25mA

Defining the linear (undistorted) region of operation for a transistor.

 39

Power dissipation

Common-base:
PCmax  VCB I C

Common-emitter:
PCmax  VCE I C

C
Common- collector:
ll t
PCmax  VCE I E
 40

Home work

P- 1,, 2a,, 2b,, 3a,, 3b,, 4a,, 4b,, 9,, 11,,

13, 14, 15, 17, 18, P-19, 23, 26, 27,
28, 31
 41

Transistor Specification Sheet

 42

Transistor specification sheet

 43

Transistor specification sheet

 44

Transistor Testing

Curve tracer response to 2N3904 npn transistor.

 45

Transistor Testing

Determining βac for the transistor characteristics of Fig. 3-24 at IC = 7

mA and VCE = 5V.
 46

Transistor Testing

Transistor tester. (Courtesy Computronics Technology, Inc.)

 47

Transistor Testing

Checking the forward-biased base-to-emitter junction of an npn

transistor.
 48

Transistor Testing

Checking the reverse-biased base-to-collector junction of an npn

transistor.
 49
Various types of transistors: (a) Courtesy General Electric
Company;
p y; ((b)) and ((c)) Courtesy
y of Motorola Inc.;; (c)
( ) Courtesy
y
International Rectifier Corporation.
 50

Transistor terminal identification.

 51
Internal construction of a Fairchild transistor in a
TO-92
TO 92 package. (Courtesy Fairchild Camera and
Instrument Corporation.)
 52
Internal construction of a Fairchild transistor in a
TO-92
TO 92 package. (Courtesy Fairchild Camera and
Instrument Corporation.) (Continued)
 53
Type Q2T2905 Texas Instruments quad pnp silicon
transistors: ((a)) appearance;
pp ; ((b)) p
pin connections. ((Courtesy
y
Texas Instruments Incorporated.)