SVF2N65F_Datasheet

2A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION

SVF2N65F is an N-channel enhancement mode power MOS

field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved planar
stripe cell and the improved guarding ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.

FEATURES

∗ 1A,650V, RDS(on)（typ）=4.1Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability

NOMENCLATURE

ORDERING INFORMATION

Part No. Package Marking Material Packing

SVF2N65F TO-220F-3L SVF2N65F Pb free Tube

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ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS ±30 V
TC=25°C 2.0
Drain Current ID A
TC=100°C 1.3
Drain Current Pulsed IDM 8.0 A
Power Dissipation(TC=25°C) 25 W
PD
-Derate above 25°C 0.20 W/°C
Single Pulsed Avalanche Energy (Note 1) EAS 100 mJ
Operation Junction Temperature Range TJ -55～+150 °C
Storage Temperature Range Tstg -55～+150 °C

THERMAL CHARACTERISTICS

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Case RθJC 5.0 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 120 °C/W

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

Characteristics Symbol Test conditions Min. Typ. Max. Unit

Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 650 -- -- V
Drain-Source Leakage Current IDSS VDS=650V, VGS=0V -- -- 10 µA
Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA
Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V
Static Drain- Source On State
RDS(on) VGS=10V, ID=1.0A -- 4.1 4.6 Ω
Resistance
Input Capacitance Ciss -- 261.8 --
VDS=25V, VGS=0V,
Output Capacitance Coss -- 34.3 -- pF
f=1.0MHZ
Reverse Transfer Capacitance Crss -- 1.3 --
Turn-on Delay Time td(on) VDD=325V, RG=25Ω, -- 10.67 --
Turn-on Rise Time tr ID=2.0A -- 20.0 --
ns
Turn-off Delay Time td(off) -- 12.4 --
Turn-off Fall Time tf (Note 2,3) -- 18.0 --
Total Gate Charge Qg VDS=520V, ID=2.0A, -- 5.83 --
Gate-Source Charge Qgs VGS=10V -- 1.73 -- nC
Gate-Drain Charge Qgd (Note 2,3) -- 2.0 --

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 SVF2N65F_Datasheet

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristics Symbol Test conditions Min. Typ. Max. Unit

Continuous Source Current IS Integral Reverse P-N -- -- 2.0
Junction Diode in the A
Pulsed Source Current ISM -- -- 8.0
MOSFET
Diode Forward Voltage VSD IS=2.0A,VGS=0V -- -- 1.4 V
Reverse Recovery Time Trr IS=2.0A,VGS=0V, -- 190 -- ns
Reverse Recovery Charge Qrr dIF/dt=100A/µS -- 0.53 -- µC
Notes:
1. L=30mH, IAS=2.37A, VDD=60V, RG=25Ω, starting TJ=25°C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.

TYPICAL CHARACTERISTICS

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 SVF2N65F_Datasheet

TYPICAL CHARACTERISTICS(continued)

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

600 12
Ciss=Cgs+Cgd(Cds=shorted)
VDS=130V
Coss=Cds+Cgd

Gate-Source Voltage– VGS(V)

500 Crss=Cgd 10 VDS=325V
VDS=520V
Capasistance(pF)

400 8

300 6
Ciss
200 Coss 4
Notes:
Crss
1. VGS=0V
2. f=1MHz
100 2
Note: ID=2.0A

0 0
0.1 1 10 100 0 2 4 6 8

Drain-Source Voltage – VDS(V) Total Gate Charge – Qg(nC)

Figure 7. Breakdown Voltage Variation Figure 8. On-resistance Variation

vs. Temperature vs. Temperature
1.2 3.0
Voltage(Normalized) – BVDSS(V)

Drain-Source On-Resistance

2.5
(Normalized) – RDS(ON)(Ω)
Drain-Source Breakdown

1.1
2.0

1.0 1.5

1.0
0.9
Notes: Notes:
1. VGS=10V 0.5 1. VGS=10V
2. ID=250µA 2. ID=1.0A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Junction Temperature – TJ(°C) Junction Temperature – TJ(°C)

Figure 10. Maximum Drain Current vs.

Figure 9. Max. Safe Operating Area
Case Temperature
102 2.0

Operation in This Area is

Limited by RDS(ON)
1
10 1.5
Drain Current - ID(A)

Drain Current - ID(A)

100µs
1ms

100 10ms 1.0

DC

10-1 Notes: 0.5

1.TC=25°C
2.Tj=150°C
3.Single Pulse

10-2 0
100 101 102 103 25 50 75 100 125 150

Drain Source Voltage - VDS(V) Case Temperature – TC(°C)

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 SVF2N65F_Datasheet

TYPICAL TEST CIRCUIT

Gate Charge Test Circuit & Waveform

Same Type VGS

Qg
as DUT 10V
50KΩ
VDS
12V 200nF
300nF

Qgs Qgd

VGS

DUT
3mA
Charge

Resistive Switching Test Circuit & Waveform

RL VDS
VDS
90%
VGS
VDD
RG
DUT
10%
VGS
10V
td(on) tr
ton td(off) tf
toff

Unclamped Inductive Switching Test Circuit & Waveform

1 2 BVDSS
EAS =
L 2 LIAS BVDSS - VDD
VDS
BVDSS
ID
IAS

RG
DUT VDD ID(t)
10V
VDD VDS(t)
tp
tp Time

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 SVF2N65F_Datasheet

PACKAGE OUTLINE

TO-220F-3L(One) UNIT: mm

TO-220F-3L(Two) UNIT: mm

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 SVF2N65F_Datasheet
Disclaimer:
• Silan reserves the right to make changes to the information herein for the improvement of the design and
performance without further notice! Customers should obtain the latest relevant information before placing orders
and should verify that such information is complete and current.
• All semiconductor products malfunction or fail with some probability under special conditions. When using Silan
products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with
the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of
such Silan products could cause loss of body injury or damage to property.
• Silan will supply the best possible product for customers!

ATTACHMENT

Revision History

Date REV Description Page

2011.03.08 1.0 Original

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