EE 171.

1
Section W34
Laboratory Reports

AY 2016-2017
1st term

Submitted by:
Rose Diane Pepito
Dave Carl Maghinay
Nelson Delfinado
Marven Yuson

Submitted to:
Prof. Mercedenia Lambino
 Activity No. 4

Common Base Configuration (DC Analysis)

Objectives:

1. To observe the response of every components in a Common Base Configuration.

2. To measure the voltage/current and compare it to its calculated value.
3. To study the input and output characteristics of a transistor in Common Base Configuration.

Introduction:

In this configuration the base is made common to both the input and out. The emitter is given the
input and the output is taken across the collector. The current gain of this configuration is less than unity.
The voltage gain of CB configuration is high. Due to the high voltage gain, the power gain is also high. In
CB configuration, Base is common to both input and output. In CB configuration the input characteristics
relate IE and VEB for a constant VCB. Initially let VCB = 0 then the input junction is equivalent to a forward
biased diode and the characteristics resembles that of a diode. Where VCB = +VI (volts) due to early effect
IE increases and so the characteristics shifts to the left. The output characteristics relate IC and VCB for a
constant IE. Initially IC increases and then it levels for a value IC = αIE. When IE is increased IC also increases
proportionality. Though increase in VCB causes an increase in α, since α is a fraction, it is negligible and so
IC remains a constant for all values of VCB once it levels off.

Materials:

BJT transistors (pnp or npn) Equipment:

Resistors: 1.5 kilo ohms 2 pcs Power Supplies
5.0 kilo ohms 1 pc Oscilloscope w/ 2 probes
1 pc Bread board

Procedure:

1. Connect/ construct the circuit as shown in the diagram

2. Measure the voltages as shown in table 2.
3. Calculate the current and fill up table 2.

Circuit Diagram:
MEASURE VBE
VCE
VCB
CALCULATED IB
IC
IE
 Activity No. 6

Common Base Configuration (AC Analysis)

Objectives:

4. To observe the response of every components in a Common Base Configuration.

5. To measure the voltage/current and compare it to its calculated value.
6. To study the input and output characteristics of a transistor in Common Base Configuration.

Introduction:

In this configuration the base is made common to both the input and out. The emitter is given the
input and the output is taken across the collector. The current gain of this configuration is less than unity.
The voltage gain of CB configuration is high. Due to the high voltage gain, the power gain is also high. In
CB configuration, Base is common to both input and output. In CB configuration the input characteristics
relate IE and VEB for a constant VCB. Initially let VCB = 0 then the input junction is equivalent to a forward
biased diode and the characteristics resembles that of a diode. Where VCB = +VI (volts) due to early effect
IE increases and so the characteristics shifts to the left. The output characteristics relate IC and VCB for a
constant IE. Initially IC increases and then it levels for a value IC = αIE. When IE is increased IC also increases
proportionality. Though increase in VCB causes an increase in α, since α is a fraction, it is negligible and so
IC remains a constant for all values of VCB once it levels off.

Materials:

BJT transistors (pnp or npn) β = 207 Equipment:

Resistors: 1.5 kilo ohms 2 pcs Power Supplies
5.0 kilo ohms 1 pc Oscilloscope w/ 2 probes
985 kΩ 1 pc Bread board

Procedure:

4. Connect/ construct the circuit as shown in the diagram

5. Measure the voltages as shown in table 2.
6. Calculate the current and fill up table 2.

Circuit Diagram:
MEASURE VBE
VCE
VCB
CALCULATE IB
IC
IE

Vo Frequency, f
Mid freq. Vomid=
High freq. Vomid/2=
Low freq. Vomid/2=
 Activity No. 5

Voltage Divider Configuration (DC Analysis)

OBJECTIVE

1 To analyse the voltage-divider bias circuit.

2 To measure the VBE, VCE, and VCB.

INTRODUCTION

The advantage of using voltage divider bias is that the base current is made small compared to
the currents through the two base (“voltage divider”) resistors. With this property, transistor beta
changes will no longer affect the base voltage and the collector current.

Design consideration:

1. VREQ= 1/10 to 1/5 of VCS

2. VCEQ is usually set to ½ VCC for middle of the load line operation.

3. VB=R_B2/(R_B1+R_B2 )(V_CC)

RB2 ≤ 1/10bRE for Voltage Divider Configuration.

Given that VCC=10V and IC=2mA

Transistor Code: 2N222 (NPN)

Measured Calculated
Vcc 10V 10V

Transistor Beta 207 ------

RE 985 kΩ 995Ω

RC 1.468 kΩ 1.50 kΩ

RB1 55.9 kΩ 55.7 kΩ

RB2 20.11 kΩ 20.6 kΩ

VCE 6V 5V

VRE 1.91V 2V

VRC 2.83V 3V
 Activity No. 7

Voltage Divider Configuration (AC Analysis)

OBJECTIVE

1 To analyse the voltage-divider bias circuit.

2 To measure the VBE, VCE, and VCB

INTRODUCTION

The advantage of using voltage divider bias is that the base current is made small compared to
the currents through the two base (“voltage divider”) resistors. With this property, transistor beta
changes will no longer affect the base voltage and the collector current.

By-passed UNby-passed
Transistor Code: 2N222 (NPN)

Measured Calculated
Vcc 10V 10V
Transistor Beta ------
RE 985 kΩ 995Ω
RC 1.468 kΩ 1.50 kΩ
RB1 55.9 kΩ 55.7 kΩ
RB2 20.11 kΩ 20.6 kΩ
VCE 6V 5V
VRE 1.91V 2V
VRC 2.83V 3V
RS 10 kΩ
CB 1µF
CE 1µF

Data for By-passed RE:

Vo Frequency, f
Mid freq. Vomid=
High freq. Vomid/2=
Low freq. Vomid/2=

Data for Unby-passed RE:

Vo Frequency, f
Mid freq. Vomid=
High freq. Vomid/2=
Low freq. Vomid/2=
 Activity No. 8

Emitter follower (AC Analysis)

Objective:

1. To observe the response of every components in a Emitter follower Configuration.

2. To measure the voltage/current and compare it to its calculated value.

Introduction:

A BJT is a three terminal two – junction semiconductor device in which the conduction is due to
both the charge carrier. Hence it is a bipolar device and it amplifier the sine waveform as they are
transferred from input to output. BJT is classified into two types – NPN or PNP. A NPN transistor consists
of two N types in between which a layer of P is sandwiched. The transistor consists of three terminal
emitter, collector and base. The emitter layer is the source of the charge carriers and it is heartily doped
with a moderate cross sectional area. The collector collects the charge carries and hence moderate doping
and large cross sectional area. The base region acts a path for the movement of the charge carriers. In
order to reduce the recombination of holes and electrons the base region is lightly doped and is of hollow
cross sectional area. Normally the transistor operates with the EB junction forward biased. In transistor,
the current is same in both junctions, which indicates that there is a transfer of resistance between the
two junctions. Hence known as transfer resistance of transistor.

Materials:

Materials:

Resistors: (2 pcs) 1.5 kW, 1.0 kW, Rs=10 kW Equipments: Oscilloscope with 2 probes
Transistor (npn or pnp) Power Supply
Resistors RB1 and RB2 Multitester
3 Capacitors Signal Generator
Breadboard

Circuit Diagram
 Data:
Vo Frequency, f

Mid freq. Vomid=

High freq. Vomid/2=

Low freq. Vomid/2=