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IRGPS60B120KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT
C
VCES = 1200V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF. VCE(on) typ. = 2.50V
• 10μs Short Circuit Capability.
• Square RBSOA. G
• Ultrasoft Diode Reverse Recovery Characteristics. @ VGE = 15V,
• Positive VCE (on) Temperature Coefficient.
E
• Super-247 Package.
N-channel ICE = 60A, Tj=25°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
Super-247™
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 105
IC @ TC = 100°C Continuous Collector Current 60
ICM Pulsed Collector Current 240 A
ILM Clamped Inductive Load Current 240
IF @ TC = 25°C Diode Continuous Forward Current 120
IF @ TC = 100°C Diode Continuous Forward Current 60
IFM Diode Maximum Forward Current 240
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 595
W
PD @ TC = 100°C Maximum Power Dissipation 238
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.20
RθJC Junction-to-Case - Diode ––– ––– 0.41 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Recommended Clip Force 20 (2) ––– ––– N(kgf)
Wt Weight ––– 6.0 (0.21) ––– g (oz)
Le Internal Emitter Inductance (5mm from package) ––– 13 ––– nH
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IRGPS60B120KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V VGE = 0V, IC = 500μA
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage ––– 0.40 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-125°C)
VCE(on) Collector-to-Emitter Saturation Voltage ––– 2.33 2.50 IC = 50A VGE = 15V 5, 6
––– 2.50 2.75 V IC = 60A 7, 9
––– 2.79 3.1 IC = 50A, TJ = 125°C 10
––– 3.04 3.5 IC = 60A, TJ = 125°C 11
VGE(th) Gate Threshold Voltage 4.0 5.0 6.0 VCE = VGE, IC = 250μA 9,10
ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage ––– -12 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C) 11 ,12
gfe Forward Transconductance ––– 34.4 ––– S VCE = 50V, IC = 60A, PW=80μs
ICES Zero Gate Voltage Collector Current ––– ––– 500 μA VGE = 0V, VCE = 1200V
––– 650 1350 VGE = 0V, VCE = 1200V, TJ = 125°C
VFM Diode Forward Voltage Drop ––– 1.82 2.10 IC = 50A
––– 1.93 2.20 V IC = 60A 8
––– 1.96 2.20 IC = 50A, TJ = 125°C
––– 2.13 2.40 IC = 60A, TJ = 125°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
trr Diode Reverse Recovery time ––– 180 ––– ns VCC = 600V, IF = 60A, L =200μH 20, 21
Irr Diode Peak Reverse Recovery Current ––– 50 ––– A VGE = 15V,RG = 4.7Ω, Ls = 150nH CT4,WF3
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IRGPS60B120KD
140 700
LIMITED BY PACKAGE
120 600
100 500
80
P tot (W)
400
IC (A)
60
300
40
200
20
100
0
0
0 20 40 60 80 100 120 140 160
0 50 100 150 200
T C (°C)
TC (°C)
Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
1000 1000
100 2 μs
10 μs 100
IC (A)
IC A)
10 100 μs
DC 1ms
10
1 10ms
0.1
1
1 10 100 1000 10000
10 100 1000 10000
VCE (V)
VCE (V)
ICE (A)
60 60
40 40
20 20
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE (V) VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs TJ = 25°C; tp = 80μs
120 120
IF (A)
60 60
40 40
20 20
0 0
0 1 2 3 4 5 0 1 2 3
VCE (V) VF (V)
Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 125°C; tp = 80μs tp = 80μs
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IRGPS60B120KD
20 20
18 18
16 16
14 14
12 ICE = 30A 12 ICE = 30A
VCE (V)
VCE (V)
10 ICE = 60A 10 ICE = 60A
ICE = 120A ICE = 120A
8 8
6 6
4 4
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)
Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C
20 500
18 450 T J = 25°C
400 T J = 125°C
16
350
14
ICE = 30A 300
VCE (V)
12
ICE (A)
4 50 T J = 25°C
2 0
5 10 15 20 0 5 10 15 20
VGE (V) VGE (V)
10000 tdOFF
8000
EOFF
6000 100 tdON
tF
4000 EON
2000 tR
0
10
0 20 40 60 80 100
20 40 60 80 100
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 125°C; L=200μH; VCE= 600V TJ = 125°C; L=200μH; VCE= 600V
RG= 4.7Ω; VGE= 15V RG= 4.7Ω; VGE= 15V
25000 10000
tdOFF
20000
EON
Swiching Time (ns)
1000
Energy (μJ)
15000
tdON
EOFF
10000 tR
100 tF
5000
0 10
0 50 100 150 0 50 100 150
RG (Ω) RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG
TJ = 125°C; L=200μH; VCE= 600V TJ = 125°C; L=200μH; VCE= 600V
ICE= 60A; VGE= 15V ICE= 60A; VGE= 15V
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IRGPS60B120KD
70 60
RG = 4.7Ω
60
50
50
40
40 RG = 22 Ω
IRR (A)
IRR (A)
30
30 RG = 47 Ω
20
20 RG = 100 Ω
10
10
0 0
0 20 40 60 80 100 0 50 100 150
IF (A) RG (Ω)
Fig. 17 - Typical Diode IRR vs. IF Fig. 18 - Typical Diode IRR vs. RG
TJ = 125°C TJ = 125°C; IF = 60A
60 12
RG = 4.7Ω 4.7Ω
11 90A
50 22Ω
10
60A
47 Ω
9
40
RG = 22 Ω 8
Q RR (μC)
IRR (A)
30 7
RG = 47 Ω 100Ω
6 30A
20 5
RG = 100 Ω 4
10
3
2
0
0 500 1000 1500
0 500 1000 1500
diF /dt (A/μs)
diF /dt (A/μs)
Fig. 19- Typical Diode IRR vs. diF/dt Fig. 20 - Typical Diode QRR
VCC= 600V; VGE= 15V; VCC= 600V; VGE= 15V;TJ = 125°C
ICE= 60A; TJ = 125°C
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IRGPS60B120KD
4000
3500
3000
4.7Ω
2500
Energy (μJ)
22Ω
2000
47Ω
1500
100Ω
1000
500
0
0 20 40 60 80 100
IF (A)
10000 16
Cies
14 600V
12 800V
1000
Capacitance (pF)
10
VGE (V)
Coes
8
Cres 6
100
4
0
10
0 50 100 150 200 250 300 350 400
0 20 40 60 80 100
Q G , Total Gate Charge (nC)
VCE (V)
Fig. 22- Typ. Capacitance vs. VCE Fig. 23 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 60A; L = 600μH
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IRGPS60B120KD
10
Thermal Response ( Z thJC )
D = 0.50
0.20
0.10
0.1
0.05
0.01
Notes:
0.02 SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005 0.0001 0.001 0.01 0.1 1
10
Thermal Response ( Z thJC )
D = 0.50
0.20
0.10
0.1
0.05
0.01 Notes:
0.02 SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005 0.0001 0.001 0.01 0.1 1
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IRGPS60B120KD
L
L
VCC
DUT 80 V DUT
0 1000V
1K Rg
diode clamp /
DUT
Driver L
- 5V
D
C 900V DUT /
DRIVER VCC
DUT Rg
VCC
R=
ICM
DUT VCC
Rg
ICE (A)
VCE (V)
ICE (A)
400 40 90% test current
300 45
300 30
tr 10% test current
200 20 200 30
5% V CE 5% V CE
100 10 100 15
5% ICE
0 0 0 0
Eof f Loss Eon Loss
-100 -10 -100 -15
-0.50 0.50 1.50 2.50 4.10 4.30 4.50 4.70
Time (μs) Time (μs)
1000 500
400 80
900 450
V CE
200 60 800 400
QRR
0 40 700 350
tRR ICE
600 300
-200 20
VCE (V)
ICE (A)
500 250
IF (A)
VF (V)
-1000 -60 0 0
-0.25 0.25 0.75 -5.00 0.00 5.00 10.00 15.00
time (μS)
time (μS)
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IRGPS60B120KD
Super-247™ Package Outline
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRGPS60B120KD
Super-247™ Part Marking Information
Notes:
VCC = 80% (VCES), VGE = 20V, L = 100 μH, RG = 4.7Ω.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 105A.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/08
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