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A. holes
B. electrons
C. ions
Answer: Option D
Explanation:
2. Work function is the maximum energy required by the fastest electron at 0 K to escape from the
metal surface.
A. True B. False
Answer: Option B
Explanation:
Work function is the minimum energy required by the fastest electron at 0 K to escape from the
metal surface.
A. silicon
B. germanium
Explanation:
A. Zener diode
B. Tunnel diode
C. Schottky diode
D. PIN diode
Answer: Option C
Explanation:
In schottky diode there is no charge storage and hence almost zero reverse recovery time.
5. A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
A. 100 B. 99
C. 1.01 D. 0.99
Answer: Option A
Explanation:
Answer: Option B
Explanation:
A. n type
B. p type
C. either n or p
Answer: Option B
Explanation:
Answer: Option B
Explanation:
Only the intensity of incident radiation governs the amount of photoelectric emission.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer
increases.
Answer: Option A
Explanation:
10. In the circuit of figure the function of resistor R and diode D are
A. to limit the current and to protect LED against over voltage
C. to limit the current and protect LED against reverse breakdown voltage.
Answer: Option C
Explanation:
Resistance limits current and diode is reverse connected and therefore protects LED against
reverse breakdown.
11. At very high temperatures the extrinsic semi conductors become intrinsic because
Answer: Option B
Explanation:
12. When a voltage is applied to a semiconductor crystal then the free electrons will flow.
A. towards positive terminal
D. towards positive terminal for 1 μs and towards negative terminal for next 1 μs
Answer: Option A
Explanation:
Since electrons are negatively charged they will flow towards positive terminal.
C. low resistivity
Answer: Option C
Explanation:
Ferrite is a low density material of composition with Fe2O3 x O, where x is a bivalent metal, such
as Cobart, Ni, Mn. These magnetic materials having very low loss of current and used in high
frequency circuit.
14. In a p type material the Fermi level is 0.3 eV above valence band. The concentration of acceptor
atoms is increased. The new position of Fermi level is likely to be
Answer: Option B
Explanation:
A. electrons
B. holes
Answer: Option A
Explanation:
Emitter is n type and emits electrons which diffuse through the base.
16. An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series
resistance is
A. 0 to 200 Ω
B. 200 - 400 Ω
Explanation:
R= = 400Ω.
R must be at least 400Ω so that current in LED does not exceed 10 mA.
A. 1
B. 2
C. 3
D. 1 or 2
Answer: Option B
Explanation:
18. A transistor has two p-n junctions. The batteries should be connected such that
Answer: Option C
Explanation:
Emitter-base junction is forward biased and base collector junction is reverse biased.
19. A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico
Ampere. The reverse saturation current at 40°C for the same bias is approximately.
A. 30 pA
B. 40 pA
C. 50 pA
D. 60 pA
Answer: Option B
Explanation:
A. 0
B. a total of 0.7 V
D. 0.35 V
Answer: Option C
Explanation:
Since there are two p-n junctions, there are two depletion layers and 0.7 V across each layer.
21. Recombination produces new electron-hole pairs
A. True B. False
Answer: Option B
Explanation:
22. An amplifier without feedback has a voltage gain of 50, input resistance of 1 kΩ and output
resistance of 2.5 kΩ. The input resistance of the current shunt -ve feedback amplifier using the
above amplifier with a feedback factor of 0.2 is
A. 1/11 kΩ
B. 1/5 kΩ
C. 5 kW
D. 11 kW
Answer: Option A
Explanation:
Explanation:
Cut in voltage in Schottky diode is about 0.3 V as compared to 0.7 V in ordinary semiconductor
diode.
24. Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.
Answer: Option A
Explanation:
Answer: Option C
Explanation:
Answer: Option B
Explanation:
In class B amplifier, two transistor are operated in such a way that one is amplify the half cycle
and second is amplify -ve half cycle.
C. 47 D. 45
Answer: Option B
Explanation:
28. Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic
semiconductor.
Reason (R): The addition of donor impurity creates additional energy levels below conduction
band.
Answer: Option B
Explanation:
A refers to type semiconductor while R refers to n type semiconductor. Both A and R are correct
but independent.
C. base is positive with respect to emitter and collector is positive with respect to base
Answer: Option C
Explanation:
In forward active mode emitter base junction is forward biased and base collector junction is
reverse biased.
A. True B. False
Answer: Option B
Explanation:
B. amplifier circuits
Answer: Option A
Explanation:
32. A particular green LED emits light of wavelength 5490, Å, the energy bandgap of the
semiconductor material used there is .. h = 6.6 x 10-34 J sec.
A. 2.26 eV
B. 1.98 eV
C. 1.17 eV
D. 0.74 eV
Answer: Option A
Explanation:
Answer: Option B
Explanation:
When reverse voltage equals breakdown value it starts conducting and voltage does not increase
further.
A. collector current
B. base current
C. emitter current
Explanation:
Emitter current is larger, collector current is slightly less than emitter current and base current is
very small.
35. The v-i characteristics of a FET is shown in figure. In which region is the device biased for small
signal amplification
A. AB B. BC
C. CD D. BD
Answer: Option B
Explanation:
A. True B. False
Answer: Option B
Explanation:
B. is in conduction band
Answer: Option B
Explanation:
A. 1 B. 2
C. 3 D. 4
Answer: Option B
Explanation:
39. A potential of 7 V is applied to a silicon diode. A resistance of 1 K ohm is also in series with the
diode. The current is
A. 7 mA
B. 6.3 mA
C. 0.7 mA
D. 0
Explanation:
40. Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32
nA at 50°C.
Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C
rise in temperature.
Answer: Option A
Explanation:
A. 42.53, 0.85 μA
B. 40.91, 0.58 μA
C. 40.91, 0.58 μA
D. 41.10, 0.39 μA
Answer: Option A
Explanation:
SICO = (1 + β).
51. = 42.53
ΔIC = (SICO).ΔICO
= 42.53 x 19.9 nA
= 0.85 μA.
42. A periodic voltage has following value for equal time intervals changing suddenly
from one value to next... 0, 5, 10, 20, 50, 60, 50, 20, 10, 5, 0, -5, -10 etc. Then
rms value of the waveform is
A. 31 V
B. 32 V
C. insufficient data
D. none of these
Answer: Option A
Explanation:
43. Work function of oxide coated cathode is much lower than that of tungsten cathode.
A. True B. False
Answer: Option A
Explanation:
A. tunnel diode
B. MOSFET
C. JFET
D. photo diode
Answer: Option B
Explanation:
A. Saturation region
B. Active region
C. Breakdown region
Answer: Option B
Explanation:
C. zero forward current till the forward voltage reaches cut in value
Answer: Option D
Explanation:
Answer: Option C
Explanation:
Answer: Option C
Explanation:
Answer: Option B
Explanation:
50. The minority carrier life time and diffusion constant in a semiconductor material are
respectively 100 microsecond and 100 cm2/sec. The diffusion length is
A. 0.1 cm
B. 0.01 cm
C. 0.0141 cm
D. 1 cm
Explanation:
Diffusion length = .
SECTION 2
Answer: Option A
Explanation:
2. What is the correct sequence of the following step in the fabrication of a monolithic, Bipolar
junction transistor?
1. Emitter diffusion
2. Base diffusion
3. Buried layer formation
4. E pi-layer formation
A. 3, 4, 1, 2
B. 4, 3, 1, 2
C. 3, 4, 2, 1
D. 4, 3, 2, 1
Answer: Option D
Explanation:
It is always non-linear.
3. For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than
that of the bulk (VSB > 0), the threshold voltage VT of the MOSFET will
A. remain unchanged
B. decrease
C. change Polarity
D. increase
Answer: Option A
Explanation:
VT depends upon MOSFET construction, hence it will Independent from MOSFET parameters.
4. Which of the following is used for generating time varying wave forms?
A. MOSFET
B. PIN diode
C. Tunnel diode
D. UJT
Answer: Option D
Explanation:
5. Calculate the resistivity of n-type semiconductor from the following data, Density of holes = 5 x
1012 cm-3. Density of electrons = 8 x 1013 cm-3, mobility of conduction electron = 2.3 x 104 cm2/
V-sec and mobility of holes = 100 cm2/V-sec.
A. 0.43 Ω-m
B. 0.34 Ω-m
C. 0.42 Ω-m
D. 0.24 Ω-m
Answer: Option B
Explanation:
Resistivity() = .
σ = e(neue + nnun).
6. An one sided abrupt junction has 1021/m3 of dopants on the lightly doped side, zero bias voltage
and a built-in potential of 0.2 V. The depletion width of abrupt junction.(q = 1.6 x 10-19 C, εr =16,
ε0 = 8.87 x 10-12 F/m) is
A. 0.036 nm
B. 0.6 μm
C. 3 mm
D. 1.5 mm
Answer: Option B
Explanation:
.
7. n-type semiconductors
Answer: Option C
Explanation:
8. In all metals
Answer: Option A
Explanation:
In all metals conductivity decreases (and resistance increases) with increase in temperature.
Answer: Option B
Explanation:
10. Assertion (A): Two transistors one n-p-n and the other p-n-p are identical in all respects
(doping, construction, shape, size). The n-p-n transistor will have better frequency response.
Answer: Option A
Explanation:
11. The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is
biased at a gate voltage of 3V. Pinch off would occur at a drain voltage of
A. 1.5 V
B. 2.5 V
C. 3.5 V
D. 4.5 V
Answer: Option B
Explanation:
A. Zener diode
B. PIN diode
C. Tunnel diode
D. Photo diode
Answer: Option C
Explanation:
Tunnel diode has heavily doped p and n layers called degenerate p and n materials.
13. A Schottky diode clamp is used along with switching BJT for
Explanation:
A. BJT is pnp
B. BJT is npn
C. transistor is faulty
Answer: Option C
Explanation:
According to figure, both the LED is glowing, which indicate that circuit is complete in both the half
cycle of a.c. signal.
Therefore Emitter and Base junction will act as short circuit in both direction, which indicate
transistor is faulty.
Answer: Option C
Explanation:
16. In which of the following is the width of junction barrier very small?
A. Tunnel diode
B. Photo diode
C. PIN diode
D. Schottky diode
Answer: Option D
Explanation:
17. If the reverse voltage across a p-n junction is increased three times, the junction capacitance
A. will decrease
B. will increase
Explanation:
Increase of reverse voltage widens the depletion layer and junction capacitance decreases.
However the decrease in capacitance is not proportional to increase in voltage.
A. PIN diode
B. Tunnel diode
C. Schottky diode
D. Photodiode
Answer: Option B
Explanation:
Tunnel diode has heavily doped p and n regions leading to very thin depletion layer.
Answer: Option B
Explanation:
If a potential difference is developed across a current carrying metal strip when the strip is placed
in transverse magnetic field.
A. ohms B. amperes
C. volts D. siemens
Answer: Option D
Explanation:
A. True B. False
Answer: Option B
Explanation:
Answer: Option B
Explanation:
Forward voltage decreases the width of depletion layer leading to low resistance.
B. holes
D. free electrons
Answer: Option D
Explanation:
A. hole
B. electron
C. immobile charges
Answer: Option C
Explanation:
A. True B. False
Answer & Explanation
Answer: Option B
Explanation:
When the device is being used, junction temperature is higher than room temperature.
26. The mean free path of conduction electrons in copper is about 4 x 10-8 m. For a copper block, find
the electric field which can give, on an average, 1 eV energy to a conduction electron
Answer: Option C
Explanation:
Work (Energy) = F x d
1 eV = e.E x d
27. When a p-n-p transistor is properly biased to operate in active region the holes from emitter.
Explanation:
28. Assertion (A): Silicon is preferred over germanium in manufacture of semiconductor devices.
Answer: Option A
Explanation:
Wider forbidden gap in silicon makes it less sensitive to temperature than germanium.
29. Assertion (A): A decrease in temperature increases the reverse saturation current in ap-n diode.
Reason (R): When a diode is reverse biased surface leakage current flows.
Answer: Option D
Explanation:
A. perfect insulator
B. conductor
C. slightly conducting
Answer: Option C
Explanation:
A. log I Vs log V
B. log I Vs V
C. I Vs log V
D. I Vs V
Answer: Option B
Explanation:
I = Is(eV/Vr - 1) = eV/Vr - 1
= = eVs/VR
Vs = VR .
Answer: Option A
Explanation:
A. 4.5 x 1011/m3
B. 3.33 x 104/m3
C. 5 x 1020/m3
D. 3 x 10-5/m3
Answer: Option A
Explanation:
34. A diode is operating in forward region and the forward voltage and current
are v = 3 + 0.3 sin ωt (volts) and i = 5 + 0.2 sin ωt (mA). The average
power dissipated is
A. 15 mW
B. about 15 mW
C. 1.5 mW
D. about 1.5 mW
Answer: Option B
Explanation:
35. Two identical silicon diodes D1 and D2 are connected back to back shown in
figure. The reverse saturation current Is of each diode is 10-8 amps and the
breakdown voltage VBris 50 v. Evaluate the voltages VD1 and VD2 dropped
across the diodes D1 and D2assuming KT/q to be 25 m V.
A. 4.983 V, 0.017 V
B. - 4.98 V, - 0.017 V
C. 0.17 V, 4.983 V
D. - 0.017 V, - 4.98 V
Answer: Option B
Explanation:
For Diode D2 Is = I0
Here Is = I0
eqv2/kT = 2 or ev2/0.026 = 2
V2 = 0.018 V
4.98 V
36. For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature
is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to
about
A. 100 mW
B. 250 mW
C. 450 mW
D. 600 mW
Explanation:
B. temperature
Answer: Option B
Explanation:
A. Silver B. Aluminium
C. Tungsten D. Platinum
Answer: Option A
Explanation:
39. In a bipolar junction transistor the base region is made very thin so that
A. recombination in base region is minimum
Answer: Option A
Explanation:
Answer: Option D
Explanation:
JFET is voltage controlled device. Therefore its input impedance is high. But voltage
gain is lower than in BJT.
41. The drain characteristics of JFET in operating region, are
A. inclined upwards
B. almost flat
C. inclined downwards
Explanation:
Answer: Option B
Explanation:
43. When a reverse bias is applied to a p-n junction, the width of depletion
layer.
A. decreases
B. increases
Answer: Option B
Explanation:
44. The Hall constant in Si bar is given by 5 x 103 cm3/ coulomb, the hole
concentration in the bar is given by
A. 105/cm3
B. 1.25 x 1015/cm3
C. 1.5 x 1015/cm3
D. 1.6 x 1015/cm3
Answer: Option B
Explanation:
A. NPN transistor
B. Tunnel diode
C. JFET
D. MOSFET
Answer: Option D
Explanation:
Answer: Option A
Explanation:
Answer: Option B
Explanation:
The frequency of incident radiation has to be more than threshold value. Wavelength is inversely
proportional to frequency.
48. The reverse saturation current of a diode does not depend on temperature.
A. True B. False
Explanation:
Answer: Option C
Explanation:
Commonly material used as piezoelectric crystal is Barium Nitrate. Generally ferroelectric crystals
and piezoelectric.
C. is about 0.4
D. is about 0.1
Answer: Option B
Explanation:
is about 0.98.
Section 3
A. PIN diode
B. Zener diode
C. Schottky diode
D. Photo diode
Answer: Option A
Explanation:
2. As per Einstein's equation, the velocity of emitted electron in photoelectric emission is given by
the equation
A.
mv2 = hf - Uw
B.
mv2 ≤ hf - Uw
C.
mv2 = hf + Uw
D.
mv2 ≤ hf + Uw
Answer: Option B
Explanation:
Some electrons have less energy than Fermi level E and, therefore, more energy than Uw to
escape.
Therefore, this equation has inequality sign.
3. For an P-channel enhancement type MOSFET determine the drain current if K = 0.278 x 10 -3A/V2,
VGS = -4V, VT = -2V, Voltage equivalent at 27°C = 26 mV.
A. 10 mA
B. 1.11 mA
C. 0.751 mA
D. 46.98 mA
Answer: Option B
Explanation:
= 1.11 mA.
4. The skin depth of copper is found to be 66 mm at 1 MHz at a certain temperature. At the same
temperature and at 2 MHz, the skin depth would be approximately
A. 47 μm
B. 33 μm
C. 92 μm
D. 1.22 μm
Answer: Option A
Explanation:
Skin depth =
5. When p-n junction is reverse biased the holes in p material move towards the junction and
electrons in n material move away from the junction.
A. True B. False
Answer: Option A
Explanation:
6. A semiconductor diode is biased in forward direction and carrying current I. The current due to
holes in p material is
A. I
B. 0
C. less than I
D. 0.5
Answer: Option C
Explanation:
Small current due to minority carriers also. Therefore hole current is less than.
Answer: Option A
Explanation:
In cut off mode a BJT is an open switch and in saturation mode it is a closed switch.
8. Assertion (A): When a photoconductive device is exposed to light, its bulk resistance increases.
Reason (R): When exposed to light, electron hole pairs are generated in the photoconductive
device.
Answer: Option D
Explanation:
1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Indium
A. 1, 2 and 3
B. 1, 2, 4, and 6
C. 3, 4, 5 and 6
D. 2, 4 and 5
Answer: Option D
Explanation:
Answer: Option A
Explanation:
A. is almost constant
B. is very small
Explanation:
A. tuning
B. rectification
C. amplification
Answer: Option A
Explanation:
A. True B. False
Answer: Option A
Explanation:
One electron has a charge 1.602 x 10-19 C, when it falls through 1 V, energy is 1 eV = 1.602 x 10-
19 J.
14. Assertion (A): When VDS is more than rated value the drain current in a JFET is very high.
Reason (R): When VDS is more than rated value, avalanche breakdown occurs.
A. Both A and R are true and R is correct explanation of A
Answer: Option A
Explanation:
15. If ib is plate current, eb is plate voltage and ec is grid voltage the v-i curve of a vacuum triode is
ib = 0.003 (eb + kec)n. Typical values of k and n are
A. 0.5 and 1
B. - 2 and 1
C. 30 and 1
D. 30 and 1.5
Answer: Option D
Explanation:
k has to be much higher than 1 so that grid is effective in controlling plate current n is not 1
because it is a nonlinear device.
16. In which material do conduction and valence bands overlap
A. insulators
B. conductors
D. semiconductors
Answer & Explanation
Answer: Option B
Explanation:
17. For a photoconductor with equal electron and hole mobilities and perfect ohmic contacts at the
ends, an increase in illumination results in
C. a decrease in resistance
D. an increase in resistance
Answer: Option C
Explanation:
18. Discrete transistors T1 and T2 having maximum collector current rating of 0.75 amp are connected
in parallel as shown in the figure, this combination is treated as a single transistor to carry a total
current of 1 ampere, when biased with self bias circuit. When the circuit is switched on, T 1 draws
0.55 amps and T2 draws 0.45 amps. If the supply is kept on continuously, ultimately it is very
likely that
Answer: Option C
Explanation:
T1 draws 0.55 A and T2 draws 0.45 A, T1 will get more heated and correct increase. Ultimately,
I1 = 1A and I2 = 0.
A. 0
B. 1
C. 2
D. 1 or 2
Answer: Option B
Explanation:
Semiconductor diode has one p-n junction, BJT has two and SCR has three p-njunctions.
Answer: Option A
Explanation:
Both A and R are correct. The diode is destroyed due to high reverse current.
21. When a diode is not conducting, its bias is
A. forward
B. zero
C. reverse
D. zero or reverse
Answer: Option D
Explanation:
22. The SCR would be turned OFF by voltage reversal of applied anode-
cathode ac supply of frequency of
A. 30 kHz
B. 15 kHz
C. 5 kHz
D. 20 kHz
Answer: Option C
Explanation:
For inverter grade SCR, typical turn off time (toff) is 5 to 50 μsec while
50 to 100 μsec for converter grade SCR.
Hence supply frequency of 5 kHz will turn off the SCR by voltage
reversal
A. 2 B. 3
C. 4 D. 5
Answer: Option D
Explanation:
A. 100 eV
B. 100 joules
C. (100)1.2 eV
D. (100)1.2 joules
Answer: Option A
Explanation:
Answer: Option B
Explanation:
A. a fixed capacitance
B. a fixed inductance
Answer: Option C
Explanation:
The applied bias governs the width of depletion layer. Therefore, capacitance varies with bias.
Explanation:
28. Assertion (A): In Hall effect the O.C. transverse voltage developed by a current carrying
semiconductor with a steady magnetic field perpendicular to the current direction has opposite
signs for n and p semiconductors.
Reason (R): The magnetic field pushes both holes and electrons in the same direction.
Answer: Option A
Explanation:
29. A voltage of 9 V is applied in forward direction to a semiconductor diode in series with a load
resistance of 1000 Ω. The voltage across the load resistance is zero. It indicates that
Explanation:
Since there is no voltage across load resistor, the current is zero and diode is open-circuit. If diode
is short- circuited or resistor is open-circuited almost 9 V will appear across resistor.
30. If the drift velocity of holes under a field gradient of 100 V/m in 5 m/s, their mobility (in
SI units) is
A. 0.05 B. 0.5
C. 50 D. 500
Answer: Option A
Explanation:
.
31. The derating factor for a BJT transistor is about
A. 0.5 mW/°C
B. 2.5 mW/°C
C. 10 mW/°C
D. 25 mW/°C
Answer: Option B
Explanation:
For every 1°C rise in ambient temperature the power dissipation must
be reduced by 2.5 mW so that transistor is safe.
32. An intrinsic silicon sample has 2 million free electrons. The number of
holes in the sample is
A. 2 million
B. almost zero
Answer: Option A
Explanation:
Answer: Option A
Explanation:
Answer: Option B
Explanation:
A. True B. False
Answer: Option B
Explanation:
A. True B. False
Answer: Option A
Explanation:
37. In an n type semiconductor the fermi level is 0.35 eV below the conduction band, the
concentration of donor atoms is increased to three times. The new position of Fermi level will be
A. 0.35 eV below conduction band
Answer: Option B
Explanation:
Reason (R): In p-n-p transistor most of holes given off by emitter diffuse through the base.
Answer: Option D
Explanation:
Reason (R): FETs and vacuum triode are voltage controlled devices.
Answer: Option A
Explanation:
A. 1, 2, 4 only
B. 4 only
C. 1, 2, 3, 4
D. none
Answer: Option C
Explanation:
If we apply the anode voltage above breakover voltage of SCR, SCR can be triggered. Also by
sufficiently fast rate of rise of anode voltage and large gate current will trigger SCR on.
During forward blocking most of the applied voltage appears across reverse biased junction J2.
This voltage across J2 associated with leakage current may rise temperature of this junction.
With increase in temperature, leakage current through junction J2 further increases and this
cumulative process may turn on the SCR at some high temperature.
41. In a bipolar transistor
Answer: Option A
Explanation:
Base is very thin and therefore recombination is minimum in both p-n-p and n-p-ntransistors.
42. If for a silicon n-p-n transistor, the base to emitter voltage (VBE) is 0.7 V and the collector to base
voltage VCB is 0.2 Volt, then the transistor is operating in the
B. saturation mode
Answer: Option A
Explanation:
A. 1 B. 2
C. 3 D. 4
Answer: Option C
Explanation:
p, n, p or n, p, n.
44. Donor energy level is n type semiconductor is very near valence band.
A. True B. False
Answer: Option B
Explanation:
45. GaAs has an energy gap 1.43 eV the optical cut off wavelength of GaAs would lie in the
Answer: Option B
Explanation:
GaAs has very large band gap and high carrier mobility.
46. Which of the following is basically a voltage controlled capacitance?
A. Zener diode
B. Diode
C. Varactor diode
D. LED
Answer: Option C
Explanation:
47. When the i-v curve of a photodiode passes through origin the illumination is
A. maximum
B. minimum
C. zero
Answer: Option C
Explanation:
i is plotted on y-axis and v on x-axis. When passing through origin current can be zero only.
48. An n type silicon bar 0.1 cm long and 100 μm2 in cross-sectional area has a majority carrier
concentration of 5 x 1020/m3 and the carrier mobility is 0.13 m0/V-s at 300k. If the charge of an
electron is 1.6 x 10-19 coulomb, then the resistance of the bar is
A. 106 ohm
B. 104 ohm
C. 10-1 ohm
D. 10-4 ohm
Answer: Option C
Explanation:
Resistance of bar(R) =
σ = neμn + Peμp
A. 3 alone is correct
D. 2 alone is correct
Answer: Option C
Explanation:
Increasing the substrate concentration lowers threshold voltage. Gate oxide layer has no effect an
threshold voltage.
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50. In which device does the extent of light controls the conduction
A. photovoltaic cell
C. LED
Answer: Option D
Explanation:
Section 4
Answer: Option B
Explanation:
Reverse saturation current doubles for every 10°C rise in junction temperature.
A. flux leakage
B. hysteresis loss
C. core saturation
D. heat generation
Answer: Option C
Explanation:
3. Generally, the gain of a transistor amplifier falls at high frequency due to the
C. skin effect
Answer: Option A
Explanation:
A. Zener diode
B. PIN diode
C. Photo diode
D. Schottky diode
Explanation:
5. Assertion (A): When Diode used as rectifier the reverse breakdown voltage should not be
exceeded.
Answer: Option A
Explanation:
6. A Si sample is doped with a fixed number of group N impurities. The electron density nis
measured from 4 K to 1200 k for the sample. Which one of the following is correct?
n increases first remains constant over a range and again increases with
C.
increasing temperature
Answer: Option B
Explanation:
Reason (R): As the ambient temperature increases, heat dissipation becomes slower.
Answer: Option A
Explanation:
8. If the drift velocity of holes under a field gradient of 100 V/m is 5m/sec. Their mobility is
A. 0.05 B. 0.5
C. 50 D. 500
Answer: Option A
Explanation:
E = μ . Vd μ= .
A. zero
B. 1010/cm3
C. 105/cm3
D. 1.5 x 1025/cm3
Answer: Option C
Explanation:
Electron concentration .
A. NPN transistor
B. PNP transistor
C. SCR
D. Vacuum triode
Answer: Option D
Explanation:
11. What is the effect of cut in voltage on the wave form of output as compared to input in a
semiconductor diode?
Answer: Option D
Explanation:
Since the duration of output waveform is less than 180°, output voltage is less than input voltage.
12. As temperature increases the number of free electrons and holes in an intrinsic semiconductor
A. increases
B. decreases
Answer: Option A
Explanation:
A. True B. False
Answer: Option A
Explanation:
Reason (R): When VGS < VP, the drain current in a JFET is almost constant.
Answer: Option C
Explanation:
15. In a reverse biased P-N junction, the current through the junction increases abruptly at
A. zero voltage
B. 1.2 V
C. 0.72 V
D. breakdown voltage
Answer: Option D
Explanation:
A. 10 kV/mm
B. 40 kV/mm
C. 100 kV/mm
D. 140 kV/mm
Answer: Option B
Explanation:
Answer: Option B
Explanation:
C. conducting material
Explanation:
The channel in JFET may be n type or p type. If channel is n type, gate is p type and if channel
is p type gate is n type.
19. In a bipolar junction transistor dc = 0.98, ICO= 2 μA and 1B = 15 μA. The collector current IC is
A. 635 mA
B. 735 mA
C. 835 mA
D. 935 mA
Answer: Option B
Explanation:
20. The voltage across the secondary of the transformer in a half wave rectifier with a shunt capacitor
filter is 50 volts. The maximum voltage that will occur on the reverse biased diode will be
A. 100 V
B. 88 V
C. 50 V
D. 25 V
Answer: Option A
Explanation:
21. Assertion (A): The forward resistance of a p-n diode is not constant.
Answer: Option A
Explanation:
A. master mask
B. slave mask
C. working mask
D. photo mask
Answer: Option C
Explanation:
The mask that is prepared first is called the master mask made from glass substrates covered by
thin chromium film.
From the master masks are prepared working masks by contact pointing and used for
Photolithography which means Photo engraving.
A. decrease in capacitance
B. increase in capacitance
C. no change in capacitance
Answer: Option A
Explanation:
24. In given figure a silicon diode is carrying a constant current of 1 mA. When the temperature of the
diode is 20°C, VD is found to be 700 mV. If the temperature rises to 40°C, VD becomes
approximately equal to
A. 747 mV
B. 660 mV
C. 680 mV
D. 700 mV
A. 0.103 eV
B. 0.673 eV
C. 1.03 eV
D. 1.27 eV
Answer: Option C
Explanation:
A. 10-6 metre
B. 10-10 metre
C. 10-15 metre
D. 10-21 metre
Answer: Option B
Explanation:
A. germanium B. aluminium
C. boron D. phosphorus
Explanation:
C. holes move towards junction and electrons move away from junction
D. holes move away from junction and electrons move towards junction
Answer: Option A
Explanation:
Holes and electrons move away from junction and therefore resistance increases to a high value.
29. If a sample of germanium and a sample of Si have the impurity density and are kept at room
temperature then
Answer: Option D
Explanation:
Since the majority of charge carrier is better in Ge than in Si, for the same concentration of
charge carriers, the conductivity of Ge is higher than that of Si.
30. When a large number of atoms are brought together to form a crystal
the energy levels of inner shell electrons are affected appreciably by the presence of
A.
other neighbouring atoms.
The energy levels of outer shell electrons are affected appreciably by the presence of
B.
other neighbouring atoms.
the energy levels of both inner and outer shell electrons are affected appreciably by the
C.
presence of other neighbouring atoms.
Answer: Option B
Explanation:
Inner shell electrons are tightly bound to the nucleus. Their energy levels cannot be affected by
presence of other atoms.
31. Determine the transistor capacitance of a diffused junction varicap diode of a reverse potential of
4.2 V if C(0) = 80 pf and VT = 0.7 V
A. 42 pf
B. 153.03 pf
C. 13.33 pf
D. Data inadequate
Answer: Option A
Explanation:
A. 0.1 V
B. 0.3 V
C. 0.7 V
D. 1V
Answer: Option C
Explanation:
This 0.7 V is also called cut in voltage. When forward voltage is 0.7 V or less there is no current.
C. barrier potential
Answer: Option C
Explanation:
No answer description available for this question. Let us discuss.
Answer: Option C
Explanation:
35. A reverse voltage of 18 V is applied to a semiconductor diode. The voltage across the depletion
layer is
A. 0V
B. 0.7 V
C. about 10 V
D. 18 V
Answer: Option D
Explanation:
Answer: Option B
Explanation:
Answer: Option D
Explanation:
A. JFET
Explanation:
39. Assertion (A): The amount of photoelectric emission depends on the intensity of incident light.
Reason (R): Photo electric emission can occur only if frequency of incident light is less than
threshold frequency.
Answer: Option C
Explanation:
Photo electric emission occurs only if frequency is higher than threshold frequency thus R is
wrong.
B. is in conduction band
Answer: Option A
Explanation:
41. Assertion (A): When a photoconductive device is exposed to light, its bulk resistance increases.
Reason (R): When exposed to light, electron hole pairs are generated in the photoconductive
device.
Answer: Option D
Explanation:
42. As comparated to an ordinary p-n diode, the extent of impurity atoms in a tunnel diode
A. is more
B. is less
Answer: Option A
Explanation:
D. saturate quickly
Answer: Option B
Explanation:
In active circuit, Inductors are used by Op-Amp resistors and capacitor instead of simple inductor.
44. When a p-n-p transistor is operating in active region, the current in the n region is due to
A. only holes
B. only electrons
C. mainly holes
D. mainly electrons
Answer: Option C
Explanation:
Since emitter is p-type, emitter current is mainly due to holes. This current diffuses through the
base.
45. In a JFET
Answer: Option A
Explanation:
46. Consider the following statements: The function of oxide layer in an IC device is to
Of these statements:
A. 1, 2, 3 are correct
B. 1, 3, 4 are correct
C. 2, 3, 4 are correct
D. 1, 2, 4 are correct
Answer: Option D
Explanation:
Oxide layer cannot have any effect on melting point of silicon. Moreover before melting silicon
breaks down.
47. An extrinsic semiconductor sample has 6 billion silicon atoms and 3 million pentavalent impurity
atoms. The number of electrons and holes is
A. 3 million each
B. 6 billion each
C. 3 million free electrons and very small number of holes
Answer: Option C
Explanation:
When pentavalent impurity is added, the number of fresh electrons is very large as compared to
number of holes.
48. In a reverse biased p-n junction, the reverse bias is 4V. The junction capacitance is about
A. 0.1 F
B. 4 μF
C. 10 nF
D. 20 pF
Answer: Option D
Explanation:
A. metallic conductors
C. semiconductors
Explanation:
50. Assertion (A): Oxide coated cathodes are very commonly used.
Reason (R): Work function of oxide coated cathode is 1 eV whereas it is 4.5 eV for pure
tungsten.
Answer: Option A
Explanation:
Lower work function leads to higher emission current. Therefore oxide coated cathodes are
commonly used.
Section 5
A. VGS = 0
C. VGS = is Positive
D. VGS = VDS
Answer & Explanation
Answer: Option B
Explanation:
A. 10 x 10-9 A
B. 5 x 10-6 A
C. 200 x 10-6 A
D. 5 x 10-3 A
Answer: Option C
Explanation:
A. fast turn on
Answer: Option C
Explanation:
No answer description available for this question. Let us discuss.
4. In a common emitter BJT amplifier, the maximum usable supply voltage is limited by
5. Assertion (A): In active region of CE output characteristics of BJT, collector current is nearly
constant.
Answer: Option A
6. The temperature of cathode is increased from 2500K to 2600K. The increase in thermionic
emission current is about
A. 0.1% B. 4%
C. 50% D. 150%
Answer: Option D
Explanation:
1. Increases with H
2. Decreases with H
3. Decreases with temp for constant H
A. 1
B. 2
C. 2, 3
D. 1 and 3
Answer: Option D
Explanation:
8. Ferrites have
C. low resistivity
Answer: Option C
Explanation:
A. Strong dielectric
B. Regular
C. Rough
D. High loss
Answer: Option B
Explanation:
A. Aβ > 1
B. Aβ = 1
C. Aβ = < 1
D. Aβ ≤ 1
Answer: Option B
11. The current through a PN Junction diode with v volts applied to the P region to the N region,
where (I0 is the reverse saturation current to the diode, m the ideality factor, kthe Boltzmann
constant, T the absolute temperature and q the magnitude of charge on an electron) is
A. I0 (e-qv/mkT - 1)
B. I0 e-qv/mkT
C. I0 (1 - eqv/mkT)
D. I0 (eqv/mkT - 1)
Explanation:
12. The ratio of diffusion constant for hole DP to the mobility for holes is proportional to
A. T2 B. T
C. 1/T D. T3
Answer: Option B
Explanation:
13. The carrier mobility in a semiconductor is 0.4 m2/Vs. Its diffusion constant at 300k will be (in
m2/s).
A. 0.43 B. 0.16
C. 0.04 D. 0.01
Answer: Option B
Explanation:
14. During induction heating of metals which of the following is abnormally high?
A. Frequency
B. Voltage
C. Current
D. Power factor
Answer: Option A
Explanation:
Answer: Option A
Explanation:
C. an ohmic region at low voltage value and a saturation region at high voltage
D. a saturation region at low voltage value and an ohmic region at high voltage
Answer: Option C
Explanation:
17. In a full wave rectifier, the current in each of the diodes flows for
Answer: Option B
Explanation:
18. In an ideal junction transistor the impurity concentration in emitter (E ), base (B) and collector (C)
is such that
A. E>B>C
B. B>C>E
C. C>E>B
D. C=E=B
Answer: Option A
Explanation:
A. 1 kVA
B. 350 VA
C. 175 VA
D. 108 VA
Answer: Option B
Explanation:
20. When a p-n junction is forward biased, the current remains zero till the applied voltage overcomes
the barrier potential.
A. True B. False
Answer: Option A
Explanation:
C. Bridge rectifier
Explanation:
Reason (R): A p-n junction has low resistance in forward direction and high resistance in reverse
direction.
Answer: Option A
Explanation:
B. physical strength
C. isolation
D. conducting path.
Answer: Option C
Explanation:
24. For a n-channel JFET with r0 = 10 kW, (VGs= 0 V, VP = - 6 V)the drain resistance rd at VGS= - 3 V
is given by
A. 40 kΩ
B. 2.5 kΩ
C. 4.44 kW
D. 120 kW
Answer: Option A
Explanation:
A. Vacum triode
B. FET
C. SCR
Answer: Option D
Explanation:
A. JFET
B. MOSFET
Answer: Option B
Explanation:
27. Assertion (A): The hybrid model of a transistor can be reduced to h parameter model and vice
versa.
Reason (R): Hybrid and h parameter models are interrelated as both of them describe the
same device.
Answer: Option A
Explanation:
28. Which impurity atom will give p type semiconductor when added to intrinsic semiconductor?
A. Phosphorus B. Boron
C. Arsenic D. Antimony
Answer: Option B
Explanation:
Answer: Option C
Explanation:
Answer: Option A
Explanation:
B. resistance value
Answer: Option C
Explanation:
Answer: Option D
Explanation:
A. True B. False
Answer: Option A
Explanation:
34. In which mode of BJT operation are both junctions forward biased?
A. Active
B. Saturation
C. Cut off
D. Reverse active
Answer: Option B
Explanation:
D. increased resistance
Explanation:
A. True B. False
Answer: Option A
Explanation:
No answer description
available for this question. Let
us discuss.
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Answer: Option C
Explanation:
Answer: Option C
Explanation:
1. common Emitter
2. common Base
3. emitter follower
4. emitter follower using Darlington pair.
A. 2, 1, 4, 3
B. 1, 2, 4, 3
C. 2, 1, 3, 4
D. 1, 2, 3, 4
Answer: Option B
Explanation:
Reason (R): When a high electric field is created at metal surface field emission may occur.
A. Both A and R are true and R is correct explanation of A
Answer: Option B
Explanation:
C. emitter is positive with respect to base and base is positive with respect to collector
D. emitter is negative with respect to base and base is positive with respect to collector
Answer: Option C
Explanation:
1. Etching
2. Exposure to UV radiation
3. Stripping
4. Developing
After a wafer has been coated with photo resist the correct sequence of these steps in
photolithography is
A. 2, 4, 3, 1
B. 2, 4, 1, 3
C. 4, 2, 1, 3
D. 3, 2, 3, 1
Answer: Option C
Explanation:
43. If both the emitter base and the collector base junctions of a bipolar transistor are forward biased,
the transistor is in the
A. active region
B. saturated region
D. inverse mode
Answer: Option B
Explanation:
A. zero
B. negative
C. positive
D. zero or positive
Answer: Option B
Explanation:
A. reverse biased
B. forward biased
C. biased to breakdown
D. unbiased
Answer: Option A
46. Fermi level in intrinsic semiconductor is at the centre of forbidden energy band.
A. True B. False
Answer: Option A
Explanation:
Answer: Option B
Explanation:
48. In photoelectric emission the maximum kinetic energy of emitted electron is proportional to
A. f
B. f
C. f2
D. f3
Answer: Option B
Explanation:
49. In a P-type semiconductor, the conductivity due to holes (= σP) is equal to e = charge of hole,
μP = hole mobility, P = hole concentration,
A.
B.
C. P.e.μP
D.
Answer: Option C
Explanation:
50. Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field.
The resulting electric field inside the speciment will be in
Answer: Option A
Explanation:
Section 6
1. In P-N junction, the region containing the uncompensated acceptor and donor ions is called
A. transition zone
B. depletion region
C. neutral region
D. active region
Answer & Explanation
Answer: Option B
Explanation:
A. majority carriers
B. minority carriers
Answer: Option B
Explanation:
Of these statements:
Answer: Option C
Explanation:
Answer: Option D
Explanation:
Answer: Option B
6. The conductivity of materials found in nature ranges from 109 ohm-1m-1 to nearly 1018ohm-1 m-
1 from this it can be concluded that the conductivity of silicon in ohm -1 cm-1will be nearly
A. 0.5 x 10-15
B. 0.5 x 10-21
C. 0.5 x 10-12
D. 0.5 x 10-3
Answer: Option D
Explanation:
7. At any point on the v-i characteristics of a semiconductor diode, the slope of v-icharacteristics is
called
A. resistance of diode
B. conductance of diode
Answer: Option D
Explanation:
8. The collector to emitter cutoff current (ICE0) of a transmitter is related to collector to base cut off
current (ICB0) as
A. ICE0 = ICB0
B. ICE0 = a ICB0
C.
ICE0 =
D.
ICE0 =
Answer: Option C
Explanation:
9. Which of the following statement about the photo electric emission is incorrect?
A. The maximum velocity of emission varies with the frequency of incident light
D. The quantum yield depends on the frequency and not the intensity of incident light
Answer: Option B
Explanation:
Answer: Option A
C. bridge rectifier
Answer: Option A
Explanation:
A. a hole is created
Answer: Option A
Explanation:
A. forward biased
B. reverse biased
D. unbiased
Answer: Option B
Explanation:
14. Germanium and Si phosphorus have their maximum spectral response in the
A. infrared region
B. ultraviolet region
C. visible region
D. X-ray region
Explanation:
A. Cut off
B. Saturation
C. Forward active
D. Reverse active
Answer: Option B
Explanation:
16. High purity copper is obtained by
A. rolling casting
B. casting
C. electrolytic refining
D. induction heating
Answer: Option C
Explanation:
17. Photo electric emission can occur only if the frequency of light is more than threshold frequency.
A. True B. False
Answer: Option A
Explanation:
A. gate voltage
B. drain current
C. source current
Answer: Option A
Explanation:
A. Ohms B. Ohms/°C
C. °C/ohm D. °C/watt
Answer: Option D
Explanation:
No answer description available for this question. Let us discuss.
A. Varactor
B. LED
C. Zener diode
Answer: Option D
21. For generating 1 MHz frequency signal, the most suitable circuit is
B. weinbridge oscillator
C. colpitt's oscillator
D. clapp oscillator
Answer: Option C
Explanation:
B. dipole semi-conductor
C. bipolar semi-conductor
D. extrinsic semi-conductor
Answer: Option B
Explanation:
A. is p type
B. is n type
C. is metallic
D. may be p or n type
Answer: Option A
Explanation:
24. The first and the last critical frequency of an RC driving point impedance function must
respectively by
Answer: Option A
Explanation:
Answer: Option B
26. In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is
A. P+ -doped
B. n+ -doped
Answer: Option C
Explanation:
A. Applied voltage
B. Current
C. Extent of doping
D. Temperature
Answer: Option D
Explanation:
A. gm r0
B. gm/r0
C. gm rp
D. gm/rp
Answer: Option C
Explanation:
Answer: Option B
Explanation:
Answer: Option C
31. When a ferromagnetic substance is magnetised, there are small changes in its dimensions. This
phenomenon is called
A. hysteresis
B. magnetostriction
C. diamagnetism
D. bipolar relaxation
Answer: Option B
Explanation:
Answer: Option C
Explanation:
C. CMOSFET D. NMOSFET
Answer: Option D
Explanation:
Answer: Option B
Explanation:
A. ferromagnetic materials
B. ferrimagnetic materials
C. ferroelectric materials
D. ferri-ferromagnetic materials
Answer: Option A
36. In a p-n-p transistor the main current carriers and the mechanism of flow respectively are
A. electrons, drift
B. holes, drift
C. holes, diffusion
D. electrons, diffusion
Answer: Option C
Explanation:
37. The 6 V zener diode shown in figure has zero zener resistance and a knee current of 5 mA. The
minimum value of R, so that the voltage across it does not fall below 6 V is
A. 1.2 kΩ
B. 80 Ω
C. 50 W
D. 0
Answer & Explanation
Answer: Option B
Explanation:
A. diode B. triode
C. tetrode D. pentode
Answer: Option C
Explanation:
39. In common base connection, the output characteristics of a bipolar junction transistor is drawn
between
A. IC and VCB
B. IC and VCE
C. IE and VCB
D. IE and VCE
Answer: Option A
Explanation:
40. In fabricating silicon BJT in ICs by the epitaxial process, the number of diffusions used is usually
A. 2 B. 3
C. 4 D. 6
Answer: Option D
41. Consider the following statements about diamagnetic material and diamagnetism.
A. 1 only
B. 2 only
C. Both 1 and 2
D. neither 1 nor 2
Answer: Option A
Explanation:
Answer: Option A
Explanation:
Answer: Option D
Explanation:
Explanation:
A. 105 ohm-m
B. 103 ohm-m
C. 100 ohm-m
D. 1 ohm-m
Answer: Option D
46. Which of the following exhibits negative resistance in a portion of its characteristics?
A. Tunnel diode
B. Zener diode
C. JFET
Answer: Option A
Explanation:
B. emission of electrons
Answer: Option C
Explanation:
A.
B.
C.
D.
Answer: Option A
Explanation:
C. never periodic
D. periodic only if all the sinusoidals are identical in frequency and phase
Answer: Option D
Explanation:
A. Tunnel diode
B. Capacitor
C. Transistor
D. Vacuum tube
Answer: Option B
Section 7
A. constantan
B. german silver
C. manganin
D. nichrome
Answer: Option B
Explanation:
C. bridge rectifier
Answer: Option B
Explanation:
A. IC and VCB
B. IE and VCB
C. IC and VCE
D. IE and VCE
Answer & Explanation
Answer: Option C
Explanation:
Reason (R): The reverse breakdown voltage of a p-n diode depends on the extent of doping.
Answer: Option B
Explanation:
5. An n type semiconductor is illuminated by a steady flux of photons with energy greater than the
band gap energy. The change in conductivity Δσ obeys which relation?
[ Here, e is the electron charge, μn electron mobility, μp hole mobility, Δn (Δp) is the excess
electron (hole) density ].
A. Δσ = 0
B. Δσ = e(σn + σp) Δn
C. Δσ = e(μnΔn - μpΔp)
D. Δσ = e μnΔn
Answer & Explanation
Answer: Option B
A. μ ohm
B. μ ohm/cm
C. μ ohm-cm
D. μ ohm-cm/°C
Answer: Option C
Explanation:
7. Figure shows characteristics curves for bipolar transistor. These curves are
Answer: Option B
Explanation:
A. forward bias
B. reverse bias
D. zero bias
Answer: Option B
Explanation:
9. The relation between plate current and plate voltage of a vacuum diode is called
C. Ohm's law
D. Boltzmann's law
Explanation:
10. Given that the band gap of cadmium sulphide is 2.5 eV, the maximum photon wavelength, for e--
hole pair generation will be
A. 5400 mm
B. 540 mm
C. 5400 Å
D. 540 Å
Answer: Option C
A. 100% B. 81.2%
C. 66.6% D. 40.6%
Answer: Option B
Explanation:
12. For a full wave bridge rectifier supplied with 50 Hz a.c., the lowest ripple frequency will be
A. 50 Hz
B. 100 Hz
C. 200 Hz
D. 400 Hz
Answer: Option B
Explanation:
13. When an electron rises through a potential of 100 V it will acquired an energy of
A. 100 eV
B. 100 Joules
C. 100 ergs
Answer: Option A
Explanation:
14. Which one of the following gain equations is correct for a MOSFET common-source amplifier?
(gm is mutual conductance, and RD is load resistance at the drain)
A. AV = gm/(1 - RD)
B. AV = gm/RD
C. AV = gm/(1 + RD)
D. AV = RD/gm
Answer: Option B
Explanation:
15. If 1 kVA transformer is used for all of the following rectifiers, the d.c. power availability will be
least in case of
C. bridge rectifier
Answer: Option D
16. Which of the following is the ferric electric material?
A. Rochelle salt
B. Barium titanate
Answer: Option D
Explanation:
A. life cycle
B. recombination time
C. life time
D. half life
Answer: Option C
Explanation:
18. In photo electric emission, the threshold frequency f0, work function Uw, and Planck's
constant h are related as
A.
B.
C. f0 = (Uw)(h)2
D. h = (Uw)(f0)
Answer: Option A
Explanation:
A. JFET
Answer: Option C
Explanation:
Answer: Option D
A. 1.3 eV
B. 0.7 eV
C. 1.1 eV
D. 1.4 eV
Explanation:
A. aluminium B. silver
C. porcelain D. copper
Answer: Option C
Explanation:
Answer: Option C
Explanation:
A. Tunnel diode
B. PNP transistor
Answer: Option A
Explanation:
25. If the energy gap of a semiconductor is 1.1 eV, then it would be.
Answer: Option A
26. The primary reason for the widespread use of Si in semiconductor device technology is
Answer: Option C
Explanation:
27. If the conductivity of pure germanium is 1.54 siemens/metre, its resistivity in ohm-metre will be
nearly
A. 65 B. 6.5
C. 0.65 D. 0.065
Answer: Option B
Explanation:
A. permeability B. conductivity
C. resistivity D. retentivity
Answer: Option C
Explanation:
A. True B. False
Answer: Option B
Explanation:
30. If a coil has diameter 'd' number of turns 'N' and form factor F then the inductance of the coil is
proportional to
A. N2dF
B. Nd2F
C.
D.
Answer: Option D
31. Under low level injection assumption, the infected minority carrier current for an extrinsic
semiconductor is essentially the
A. diffusion current
B. drift current
C. recombination current
D. induced current
Answer & Explanation
Answer: Option A
Explanation:
A. becomes narrow
B. widens
D. reduce to zero
Answer: Option B
Explanation:
A. CC-CB B. CE-CB
C. CB-CC D. CE-CC
Answer: Option B
Explanation:
A. 0.5 B. 1
C. 1.3 D. 2.1
Answer: Option C
Explanation:
35. If an electron move through a potential difference of 500 V, the energy possesses by it will be
A. 500 ergs
B. 500 joules
C. 500 eV
D. 500 mV
Answer: Option C
36. In which of the following does a negative resistance region exist in the v-icharacteristics?
A. PIN diode
B. Schottky diode
C. Tunnel diode
D. Zener diode
Answer: Option C
Explanation:
No answer description available for this question. Let us discuss.
A. 1 Ω-cm
B. 400 Ω-cm
C. 10000 Ω-cm
D. 230000 Ω-cm
Answer: Option D
Explanation:
Answer: Option D
Explanation:
A. CMRR
B. bandwidth
C. slew rate
D. open-loop gain
Answer: Option D
Explanation:
40. The addition of impurity in extrinsic semiconductor is about 1 part in 108 parts.
A. True B. False
Answer: Option A
C. to measure conductivity
Answer: Option D
Explanation:
No answer description available for this question. Let us discuss.
42. The v-i characteristic of an element is shown in below figure the element is
Answer: Option D
Explanation:
43. Diffusion constants Dp, Dn mobility μp, μn and absolute temperature T are related as
A.
B.
C.
D.
Answer: Option A
Explanation:
44. The probability giving distribution of electrons over a range of allowed energy levels is known as
A. Maxwell's Distribution
B. Fermi-Dirac Distribution
Answer: Option B
Explanation:
A. True B. False
Answer: Option A
46. It is required to trace the output characteristics of a CE bipolar transistor on a CRO screen. The
proper method is
apply the voltage drop across collector resistance to Y input, disconnect sweep
A.
generator and apply VCE to X input
apply VCE to Y input, disconnect the sweep generator and apply voltage drop across
D.
collector resistance to X input
Answer: Option A
Explanation:
A. 24 B. 28
C. 32 D. 36
Answer: Option C
Explanation:
Answer: Option D
Explanation:
49. A JFET
Answer: Option D
Explanation:
Section 8
Reason (R): When a specimen of semiconductor carrying current I lies in a magnetic field the
force on electrons and holes is in opposite directions.
Answer: Option A
Explanation:
A.
B.
C.
D.
Answer & Explanation
Answer: Option D
Explanation:
3. When a p-n junction is forward biased. The width of depletion layer decreases.
A. True B. False
Answer: Option A
Explanation:
4. In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a
load, will be least?
Answer: Option D
Explanation:
B. the majority carriers in both p and n materials are driven toward the junction.
C. the majority carriers in both p and n materials are away from the junction.
Answer: Option B
A. VGS = 0
C. VGS is negative
Answer: Option A
Explanation:
7. A potential difference is developed across a current carrying metal strip when the strip is placed in
a transverse magnetic field. The above effect is known as
A. Fermi's effect
C. Joule's effect
D. Hall's effect
Answer & Explanation
Answer: Option D
Explanation:
8. In a zener diode
Answer: Option C
Explanation:
9. Which one of the following bipolar transistors has the highest current gain bandwidth Product (fr)
for similar geometry?
Answer: Option B
Explanation:
B. mostly in n region
Answer: Option A
11. An increase of reverse voltage decreases the junction capacitance.
A. True B. False
Answer: Option A
Explanation:
12. The maximum forward current in case of signal diode is in the range of
A. 1 A to 10 A
B. 0.1 A to 1 A
Explanation:
A. Thomson effect
B. Seeback effect
C. Peltier effect
D. Joule effect
Answer: Option B
Explanation:
A. Semiconductor device
B. Resistors
C. Capacitors
D. Inductors
Answer: Option A
Explanation:
No answer description available for this question. Let us discuss.
15. Which of the following characteristics of a silicon p-n junction diode make it
suitable for use as ideal diode?
A. 1 and 2
B. 1, 2, 3, 4
C. 2, 3, 4
D. 1, 3
Answer: Option B
A. 10 to 70 m-ohm-cm
B. 80 to 130 m-ohm-cm
Answer: Option C
Explanation:
No answer description available for this question. Let us discuss.
A. CrSb
B. NIO
C. MnO
Answer: Option D
Explanation:
18. Assertion (A): The capacitance of a reverse biased pin diode is lower
than that of reverse biased p-n diode.
Answer: Option A
Explanation:
No answer description available for this question. Let us discuss.
A. 0.5 V
B. 15 V
C. - 0.5 V
D. - 15 V
Answer: Option A
Explanation:
Answer: Option A
21. Figure represents a
A. Esaki diode
B. Triac
C. Varactor
D. Gunn diode
Answer: Option C
Explanation:
Answer: Option A
Explanation:
A. 0.12 eV
B. 1.12 eV
C. 0.72 eV
D. 7.2 eV
Answer: Option B
Explanation:
A. in valence band
B. in conduction band
Answer: Option D
Explanation:
25. For an n-channel JEFT having drain source voltage constant if the gate
source voltage is increased (more negative) pinch off would occur for
Answer: Option C
26. An intrinsic semiconductor (intrinsic electron density = 1016 m-3) is deped with donors to a
level of 1022 m-3. What is the hole density assuming all donors to be ionized?
A. 107 m-3
B. 108 m-3
C. 1010 m-3
D. 106 m-3
Answer: Option D
Explanation:
A. the increase in ripple with load current causes a decrease in average voltage
B. the increase in ripple with load current causes a increase in average voltage
Answer: Option A
Explanation:
A. (Vr)2 B. (Vr)n
C. (Vr)-n D. (Vr)3/2
Answer: Option B
Explanation:
29. In the schematic representation of bipolar junction transistor, the direction of arrow shows the
direction of flow of
A. holes
B. electrons
Answer: Option A
Explanation:
A. μ = σKH
B. σ = μKH
C. KH = μσ
D. KH =(μσ)1.1
Answer: Option A
31. The forbidden band in semiconductors is of the order of
A. 6 eV
B. 1 eV
C. 10 eV
D. 0.01 eV
Answer: Option B
Explanation:
32. For an P-N-P transistor in normal operation its junction are biased as
Answer: Option B
Explanation:
33. A FET is to be operated as voltage variable resistor. For this drain to source voltage VDSshould be,
A. 74
B. = VP
C. < VP
D. > VP
Answer: Option C
Explanation:
34. Assertion (A): FET has characteristics very similar to that of pentode.
Reason (R): Both FET and pentode are voltage controlled devices.
Answer: Option A
Explanation:
A. transistor capacitance
Answer: Option A
36. In an intrinsic semiconductor, the intrinsic charge concentration at any absolute temperature T is
proportional to
A. T B. T2
C. T3 D. T4
Answer: Option C
Explanation:
37. The conductivity of an intrinsic semiconductor is (symbols have the usual meanings).
D. σi = ni (μn - μp)
Explanation:
A. T B. T2
C. T3 D. T4
Answer: Option B
Explanation:
A. zinc sulphide
B. gallium arsenide
C. gallium phosphide
Answer: Option A
Explanation:
D. increased resistance
Answer: Option A
41. Consider the following statements about conditions that make a metal semiconductor contact
rectifying
1. N type semiconductor with work function φs more than work function φM of metal
2. N type semiconductor with work function φs less than work function φM of metal
3. P type semiconductor with work function φs more than work function φM of metal
4. P type semiconductor with work function φs less than work function φM of metal.
Of these statements
Answer: Option A
Explanation:
42. Silicon diodes have __________ reverse resistance than germanium diodes.
A. a much smaller
B. a much larger
C. an infinite
D. a negligible
Answer: Option B
Explanation:
43. The kinetic energy of photoelectrons emitted by a photo sensitive surface depends on
Answer: Option B
Explanation:
Answer: Option D
Explanation:
45. Which of the following statements regarding two transistor model of p-n-n-p device is correct?
Answer: Option D
A. nichrome B. constantan
C. metal D. manganin
Answer: Option A
Explanation:
Answer: Option D
Explanation:
A. IC = βIB
B. IC = IB
D. IC < βIB
Answer: Option D
Explanation:
49. When a semiconductor bar is heated at one end, a voltage across the bar is developed. If the
heated is positive the semiconductor is
A. P-type
B. n-type
C. intrinsic
D. highly degenerate
Answer: Option D
Section 9
1. The O/P char, of a FET is given in the figure. In which region is the device biased for small signal
amplification?
A. AB B. BC
C. CD D. BD
Answer: Option B
Explanation:
A. True B. False
Answer: Option B
Explanation:
A. Tunnel diode
B. Zener diode
C. PIN diode
D. Schottky diode
Answer: Option A
Explanation:
4. The scaling factor of an MOS device using constant voltage scaling model, the gate area of the
device will be scaled as
A. 1/
B. 1/2
C. 1/3
D. 1/4
Answer: Option D
Explanation:
No answer description available for this question. Let us discuss.
5. A full wave bridge rectifier is supplied voltage at 50 Hz. The lowest ripple frequency will be
A. 400 Hz
B. 200 Hz
C. 100 Hz
D. 50 Hz
Answer: Option C
A. composition
B. moisture content
C. thickness
Answer: Option D
Explanation:
Answer: Option C
Explanation:
A. zero
Answer: Option B
Explanation:
Answer: Option C
Explanation:
10. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be
concluded that
Answer: Option B
A. is + vely charged
B. is electrically neutral
D. acts as a dipole
Answer: Option B
Explanation:
A. IC = βIB
B. IC > bIB
D. IC < βIB
Answer: Option B
Explanation:
13. An inductor filter has a ripple that __________ with load resistance and consequently is used only
with relatively __________ load currents.
A. decreases, low
B. decreases, high
C. increases, low
D. increases, high
Answer: Option D
Explanation:
14. In a JFET
A. the source gate junction is forward biased and gate drain junction is reverse biased
D. the source gate junction is reverse biased and gate drain junction is forward biased
Answer: Option C
Explanation:
15. Introducing a resistor in the emitter of a common amplifier stabilizes the d.c. operating
point against variations in
D. none of these
Answer: Option C
16. Consider the following statement S1 and S2.
D. S1 is true, S2 is false
Answer: Option D
Explanation:
Answer: Option B
Explanation:
Answer: Option B
Explanation:
19. The mean life time of the minority carriers is in the range of a few
A. seconds
B. milli seconds
C. micro seconds
D. nano seconds
Answer: Option D
Explanation:
20. Choose the correct match for input resistance of various amplifier
configurations shown below configuration.
Answer: Option B
21. The resistivity of a semiconductor
Answer: Option B
Explanation:
A. cut in voltage
B. barrier voltage
C. breakdown voltage
D. depletion voltage
Answer & Explanation
Answer: Option C
Explanation:
Answer: Option A
Explanation:
24. In intrinsic semiconductor the increase in conductivity per degree increase in temperature is about
A. 2% B. 6%
C. 15% D. 25%
Answer: Option B
Explanation:
A. 0.406 B. 1.21
C. 1.11 D. 2.22
Answer: Option B
26. Which of the following semi-conductor has forbidden energy gap less 1
eV?
A. Sulphur B. Phosphorous
C. Germanium D. Carbon
Answer: Option C
Explanation:
Answer: Option B
Explanation:
A. injection moulded
B. extruded
C. cast moulded
Answer: Option C
Explanation:
A. PIN diode
B. LED
C. Photo diode
D. Tunnel diode
Answer: Option B
Explanation:
30. The current in a p-n junction diode with V volts applied in p region
relative to n region (where I0 is reverse saturation current, m is ideality
factor, k is Boltzmann's constant, T is absolute temp and q is charge on
electron) is
A. I0 (e-qV/mkT - 1)
B. I0 e-qV/mkT
C. I0 (eqV/mkT)
D. I0 (eqV/mkT - 1)
Answer: Option D
31. In the BJT amplifier shown in the figure is the transistor is biased in the forward
active region. Putting a capacitor across RE will
Answer: Option B
Explanation:
A. 100 V
B. 72 V
C. 50 V
D. 38 V
Answer: Option A
Explanation:
A. 1, 2, 3
B. 1, 3, 4
C. 2, 3, 4
D. 1, 2, 4
Answer: Option D
Explanation:
No answer description available for this question. Let us discuss.
A. 0.12 eV
B. 0.32 eV
C. 0.72 eV
D. 0.92 eV
Answer: Option C
Explanation:
35. If the gate of JFET is reverse biased, the width of depletion region
A. becomes zero
B. is uniform
Answer: Option D
36. If the atomic number of germanium is 32, the number of electrons in the outer most
shell will be
A. 2 B. 3
C. 4 D. 6
Explanation:
A. bipolar dielectrics
B. non-metallic dielectrics
C. liquid dielectrics
Answer: Option A
Explanation:
A. True B. False
Answer: Option B
Explanation:
39. Figure shows small signal common base transistor circuit.The current source I and
resistor R on the output side are
A.
ie and re
B. ie and (1 - )re
D. ie and re
Answer & Explanation
Answer: Option D
Explanation:
40. Consider the following statement associated with bipolar junction transistor and JFET
Of these statements
Answer: Option B
41. The turn off time of a bipolar
transistor is about
A. 0.5 ns
B. 10 ns
C. 70 ns
D. 150 ns
Answer: Option C
Explanation:
No answer description
available for this question. Let
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A. frequency
Answer: Option D
Explanation:
A. 0.99 B. 0.9
C. 0.8 D. 0.7
Answer: Option A
Explanation:
44. For signal diodes the PIV rating is usually in the range
A. 1 V to 10V
B. 10 V to 30V
C. 30 V to 150V
D. 150 V to 400V
Answer: Option C
Explanation:
A. zero
B. negative
C. positive
D. zero or positive
Answer: Option A
Answer: Option A
Explanation:
47. If both emitter base and collector base junctions of a BJT are forward biased, the transistor is in
A. active region
B. saturated region
D. inverse mode
Answer: Option B
Explanation:
No answer description available for this question. Let us discuss.
48. Which of the following can be operated with positive as well as negative gate voltage?
A. JFET
C. MOSFET
Answer: Option C
Explanation:
49. The reverse breakdown voltage of a diode depends on the extent of doping.
A. True B. False
Answer: Option A
Explanation:
Answer: Option B
Section 10
1. At a P-N junction, the potential barrier is due to the charges on either side of the
junction, which consists of
Answer: Option A
Explanation:
A. True B. False
Answer: Option A
Explanation:
A. manganin B. porcelain
C. carbon D. aluminium
Answer: Option A
Explanation:
4. When the light falling on a photodiode increases, the reverse minority current
A. increases
B. increases or decreases
C. decreases
Answer: Option A
Explanation:
A. magnetic hystresis
B. magnetic expansion
C. magneto striction
D. magneto calorisation
Answer: Option C
6. As the temperature of an
intrinsic semiconductor
material is increased
neutrons acquire
B.
charge
Answer: Option C
Explanation:
No answer description
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7. In an insulated gate FET, the polarity of inversion layer is the same as that of
Answer: Option B
Explanation:
A. True B. False
Answer: Option A
Explanation:
9. The conductivity of germanium increases by about 6 percent per degree increase in temperature.
A. True B. False
Answer: Option A
Explanation:
B. 200 - 4000 Å
C. 4000 to 7700 Å
Answer: Option C
A. poor rectification
B. ideal rectification
Answer: Option A
Explanation:
A. increases
D. remains unaltered
Answer & Explanation
Answer: Option A
Explanation:
Answer: Option D
Explanation:
14. If an additional two diodes were used to connect the 1 kW load across a bridge rectifier circuits,
utilizing the full secondary of the transformer, how much d.c. power could be delivered using a
transformer with the rating of 105 VA?
A. 35 W
B. 60 W
C. 85 W
D. 100 W
Explanation:
A. ID is zero
C. ID is positive
Answer: Option A
A. collector current
B. base current
C. emitter current
Answer: Option B
Explanation:
A. increases
B. decreases
D. remains unaffected
Answer: Option B
Explanation:
A. avalanche current
B. zener current
Answer: Option D
Explanation:
Answer: Option C
Explanation:
20. If a sample of Ge and a sample of Si have the same impurity density are kept at room
temperature
Answer: Option D
A. True B. False
Answer: Option B
Explanation:
Answer: Option B
Explanation:
A. 1 in 100
B. 1 in 1000
C. 1 in 100, 0000
Answer: Option B
Explanation:
A. VCE B. VCB
C. VBE D. none
Answer: Option B
Explanation:
25. The impurity commonly used for realizing the base region of a n-p-n transistor is
A. gallium B. indium
C. boron D. phosphorus
Answer: Option C
Answer: Option A
Explanation:
Reason (R): The v-i curve of a tunnel diode resembles letter 'N'.
Answer: Option A
Explanation:
Answer: Option B
Explanation:
29. Which one of the following circuits is most suitable as an oscillator at a frequency of 100Hz?
A. Hartley oscillator
B. Colpitts oscillator
C. Crystal oscillator
D. Twin-T oscillator
Answer: Option A
Explanation:
Answer: Option C
31. Which of the following materials has the highest electrical conductivity?
A. Steel B. Silver
C. Aluminium D. Zinc
Answer: Option B
Explanation:
No answer description available for this question. Let us discuss.
Answer: Option D
Explanation:
33. Hay bridge is suitable for measuring inductance of which one of the following inductors?
Answer: Option B
Explanation:
A. ferromagnetic B. antiferromagnetic
C. diamagnetic D. paramagnetic
Answer: Option C
Explanation:
35. If μn is mobility of free electron and μp is mobility of holes then for silicon at 300 K
A. μn = μp
B. μn > μp
C. μn < μp
Answer: Option B
36. In a specimen of n type semiconductor, the initial concentration of holes and electrons
ispno and nno. When the specimen is subjected to radiation, the hole and electron concentration
increase to pn and nn. Then
A. pn - pno = nn - nno
B. pn + pno = nn + nno
D. pn + pno = nn - pno
Answer: Option A
Explanation:
37. Which of the following diode is designed to operate in the breakdown region?
A. Signal diode
B. Power diode
C. Zener diode
Answer: Option C
Explanation:
38. Fill in the suitable word in the blanks is the following questions. The electron in the outermost
orbit is called __________ electron.
A. valence B. covalent
C. acceptor D. donor
Answer: Option A
Explanation:
39. A silicon diode is forward biased and total applied voltage is 5 V. The voltage across p-njunction is
A. 5V
C. 0.7 V
D. 0
Answer: Option C
Explanation:
40. In a triode
Answer: Option A
41. The output characteristics of a bipolar transistor has three distinct regions. They are known as
Explanation:
Answer: Option A
Explanation:
A. -ve feedback
B. +ve feedback
Answer: Option C
Explanation:
44. Which of the following material is preferred for transformer cores operating in micro wave
frequency range?
A. Ferrites
B. Silicon steel
C. Superalloy
D. Copper
Answer: Option A
Explanation:
45. The ac resistance of a forward biased p-n junction diode operating at a bias voltage V and carrying
current 'I' is
A. 0
C.
D.
Answer: Option C
46. Photoelectric emitters in photo tubes are generally made of
A. alkali metals
B. metals
C. semiconductors
Answer: Option A
Explanation:
47. Assertion (A): Power transistors are more commonly of silicon npn type.
Answer: Option A
Explanation:
Answer: Option A
Explanation:
49. The addition of n type impurity to intrinsic material creates allowable energy levels.
Answer: Option A
Explanation:
1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Indium
A. 1, 2, 3
B. 1, 2, 4, 6
C. 3, 4, 5, 6
D. 1, 4, 5
Answer: Option D
Section 11
1. The depletion layer in a reverse biased p-n junction is due to the presence of
A. electrons
B. holes
D. immobile ions
Answer: Option D
Explanation:
A. Diamagnetic B. Paramagnetic
C. Ferromagnetic D. Ferrimagnetic
Answer: Option A
Explanation:
A. no free charges
B. no majority carriers
C. no minority carriers
Answer: Option D
Explanation:
B. silicon iron
C. ferric-oxide
D. silver nitrate
Explanation:
A. bridge rectifier
B. ring modulator
C. frequency discriminator
D. voltage doubler
Answer: Option D
6. Gold is often diffused into
silicon P-N junction devices to
increase
A.
recombination rate
reduce
B.
recombination rate
make silicon a
C. direct gap
semiconductor
make silicon
D.
semimetal
Answer & Explanation
Answer: Option B
Explanation:
No answer description
available for this question. Let
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7. In a solar cell, the photovoltaic voltages is the voltage at which the resultant current is
A. positive
B. zero
C. negative
D. rated current
Answer: Option B
Explanation:
8. The forbidden energy gap between the valence band and conduction band will be wide in case of
A. semiconductors
B. all metals
D. insulators
Answer & Explanation
Answer: Option D
Explanation:
A. 10 eV
B. 6 eV
C. 1 eV
D. 0.2 eV
Answer: Option C
Explanation:
Answer: Option B
11. Before doping the semiconductor material is
A. dehydrated B. heated
C. hardened D. purified
Answer: Option D
Explanation:
12. The atomic number of silicon is 14. It can be therefore concluded that
Answer: Option D
Explanation:
A. wood B. paper
C. lead D. aluminium
Explanation:
A. 1 to 100 ohms
B. 10 to 1 K ohms
C. 100 to 1 M ohms
Answer: Option C
Explanation:
A. J = (μn + μp)eniE
B.
J=
C.
J=
D.
J=
Answer: Option A
16. In order to achieve good stabilization in potential divider method current
I1 through R1and R2 should be
A. I1 > 20 IB
B. I1 > 15 IB
C. I1 < 5 IB
D. I1 > 10 IB
Answer: Option D
Explanation:
17. A sample of N type semiconductor has electron density of 6.25 x 108/cm2 at 300
K. If the intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3 at
this temperature, the hole density works out to be
A. 106/cm3 B. 108/cm3
C. 1010/cm3 D. 10l2/cm3
Answer: Option B
Explanation:
Answer: Option A
Explanation:
Answer: Option C
Explanation:
Answer: Option B
21. In n channel JFET, the gate voltage is made more negative
D. the channel width will decrease and drain current will increase
Answer: Option C
Explanation:
C. at triple point
Answer: Option A
Explanation:
No answer description available for this question. Let us discuss.
23. The phenomenon known as "Early effect" in a BJT refers to a reduction of the effective
base width caused by
D. the early removal of stored base charge during saturation to cut off switching
Answer: Option B
Explanation:
A. an insulator
B. a super conductor
C. a good conductor
D. a variable resistor
Answer: Option A
Explanation:
A. applied load
B. internal compensation
Answer: Option D
26. Which of the following material can be used in cable shields?
A. Copper
B. Aluminium
C. Cast iron
D. Lead
Answer: Option D
Explanation:
Answer: Option B
Explanation:
Answer: Option D
Explanation:
29. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore, it can be concluded that
A. the conductivity of silicon will be less than that of germanium at room temperature
B. the conductivity of silicon will be more than that of germanium at room temperature
Answer: Option A
Explanation:
30. Assertion (A): The resistivity of intrinsic semiconductor decreases with increase in
temperature.
Answer: Option A
31. Typical value of reverse current in a semiconductor diode is
A. 1A
B. 0.1 A
C. 1 μA
D. 0.1 μA
Answer: Option D
Explanation:
A. Silicon
B. Germanium
Answer: Option C
Explanation:
Answer: Option C
Explanation:
B. phase splitter
C. the O/P buffer
Answer: Option C
Explanation:
Answer: Option A
36. If 100 V is the peak voltage across the secondary of the transformer in a half-wave rectifier
(without any filter circuit), then the maximum voltage on the reverse-biased diode is
A. 200 V
B. 141.4 V
C. 100 V
D. 86 V
Answer: Option B
Explanation:
No answer description available for this question. Let us discuss.
37. The O/P Power of a power amplifier is several times its input power. It is possible because
D. power amplifier converts a part of I/P d.c. power into a.c. power
Answer: Option D
Explanation:
A. True B. False
Answer: Option A
Explanation:
39. Due to the formation of Schottky defects the density of the crystal
A. increases slightly
B. increases appreciably
C. decreases slightly
D. decreases appreciably
Answer: Option C
Explanation:
A. 1.36 eV
B. 1.10 eV
C. 0.80 eV
D. 0.67 eV
Answer: Option B
41. The current due to thermionic emission is given by Richardson Dushman equation.
A. True B. False
Answer: Option A
Explanation:
B. Maxwell's equation
Answer: Option C
Explanation:
emitter base junction is forward biased and base collector junction is reverse
C.
biased
emitter base junction is reverse biased and base collector junction is reverse
D.
biased
Answer: Option C
Explanation:
C. electronic charge
Answer: Option A
Explanation:
B. the temperature
C. its current
D. thermal voltage
Answer: Option C
46. The Ni-Zn ferrites are used for audio and TV transformers is that
Answer: Option A
Explanation:
C. carriers concentration
Answer: Option A
Explanation:
A. 0.1 eV
B. 0.7 eV
C. 1.1 eV to 1.2 eV
D. 5 to 15 eV
Explanation:
49. When electronic emission occurs due to bombardment of high velocity electrons on a metal
surface, it is called secondary emission.
A. True B. False
Answer: Option A
Explanation:
A. True B. False
Answer: Option B
Section 12
Answer: Option D
Explanation:
A. Pressure B. temperature
C. composition D. ageing
Answer: Option B
Explanation:
Answer: Option A
Explanation:
No answer description available for this question. Let us discuss.
A.
B.
C.
D.
Answer: Option B
Explanation:
A. True B. False
Answer: Option A
A. True B. False
Explanation:
A. 0.1 eV
B. 2 eV
C. 5 eV
D. 10 eV
Answer: Option D
Explanation:
C. randomly oriented
D. all aligned antiparallel such that the sublattice cancels out exactly
Explanation:
A. purifying it
D. increasing percentage
Answer: Option C
Explanation:
10. All of the following elements have three valence electrons EXCEPT
A. boron B. indium
C. gallium D. arsenic
Answer: Option D
11. What is the function of silicon dioxide layer in MOSFETS?
Answer: Option A
Explanation:
12. The modulation of effective base width by collector voltage is known as Early effect,
hence reverse collector voltage
Answer: Option C
Explanation:
13. Assertion (A): In intrinsic semiconductors, the charge concentration increases with
temperature.
Reason (R): At higher temperatures, the forbidden energy gap in semiconductors is
lower.
Answer: Option A
Explanation:
A. 3.8 eV
B. 4.7 eV
C. 7.4 eV
D. 12.5 eV
Answer: Option C
Explanation:
A. μ = rpgm
B. rp = μgm
C. gm = μrp
D. rpgm
Answer: Option B
16. A 2 bit binary multiplier can be implemented using
A. 2 I/P only
Answer: Option B
Explanation:
Answer: Option B
Explanation:
A. 10 to 100 ohms
B. 10 to 10 K ohms
C. 10 to 200 ohms
D. 10 to 25 M ohms
Answer: Option D
Explanation:
A. True B. False
Answer: Option A
Explanation:
No answer description available for this question. Let us discuss.
Answer: Option C
21. A sample of N-type semiconductor has electron density of 6.25 x 10 18/cm3 at 300k. If
the intrinsic concentration of carriers in this sample is 2.5 x 10 13/cm3 at this temperature
the hole density works out to be
A. 106/cm3 B. 108/cm3
C. 1010/cm3 D. 10l2/cm3
Answer: Option B
Explanation:
A. True B. False
Explanation:
Answer: Option D
Explanation:
Explanation:
25. In a JFET avalanche breakdown occurs when VDS = 22 V and VGS = 0. If VGS = -1 V, the
avalanche breakdown will occur at
A. VDS = 22 V
Answer: Option D
26. The density of states (i.e. number of states per eV per m3) in the conduction band for
energy level E is proportional to
A. E
B. E
C. E1.5
D. E2
Answer: Option A
Explanation:
A. 12.5 Ω-cm
B. 1.25 Ω-cm
C. 0.125 Ω-cm
D. 125 Ω-cm
Answer: Option B
Explanation:
Answer: Option C
Explanation:
Answer: Option B
Explanation:
A. Tunnel diode
B. Zener diode
C. Photo diode
Answer: Option B
31. Assertion (A): In n-p-n transistor conduction is mainly due to electrons.
Answer: Option A
Explanation:
32. The factor n in the equation for calculating current for a silicon diode is
A. 1
B. 2
C. 2.5
Answer: Option D
Explanation:
33. An LED is
A. an ohmic device
B. a display device
Answer: Option B
Explanation:
A. zero
B. positive
C. high
Answer: Option D
Explanation:
35.
For the n-type semiconductor with n = NP and P = , the hole concentration will fall
below the intrinsic value because some of the holes
Answer: Option D
36. For a junction FET in the pinch off region as the drain voltage is increased, the drain
current
A. becomes zero
B. abruptly decreases
C. abruptly increases
D. remains constant
Answer: Option D
Explanation:
37. To avoid thermal runaway in the design of an analog circuit, the operating point of the
BJT should be such that it satisfies the condition.
A. VCE = VCC
B. VCE ≤ VCC
C. VCE ≥ VCC
Answer: Option B
Explanation:
38. For a MOS capacitor fabricated on a P-type semiconductor, strong inversion occurs when
Answer: Option D
Explanation:
Answer: Option B
Explanation:
A. electrical breakdown
B. thermal breakdown
C. electrochemical breakdown
Answer: Option D
41. AE 139 is a
A. tunnel diode
C. photoconductive cell
D. silicon diode
Answer: Option B
Explanation:
A. 1, 2, 3
B. 1, 3, 4
C. 2, 3, 4
D. 4, 1, 2
Answer: Option D
Explanation:
A. electrons B. molecules
C. atoms D. ions
Answer: Option D
Explanation:
A. VCE
B. IB
Answer: Option A
Explanation:
Answer: Option C
46. The main purpose of using transformer coupling in a class A amplifier is to make it more
A. efficient
B. less costly
C. less bulky
D. distortion free
Answer: Option D
Explanation:
47. The effective channel length of a MOSFET in saturation decreases with increase in
A. gate voltage
B. drain voltage
C. source voltage
D. body voltage
Answer: Option A
Explanation:
48. Which of the following element does not have three valence electrons?
A. Boron B. Aluminium
C. Gallium D. Phosphorus
Answer: Option D
Explanation:
A. Hydrogen bromide
B. Oxygen
C. Ozone
D. Caustic potash
Answer: Option C
Explanation:
50. Electrons within a metal have energy levels from zero to Fermi level EF.
A. True B. False
Answer: Option A
Section13
1. A Darlington emitter follower circuit is some times used in the output stage of a TTL
gate in order to
Answer: Option C
Explanation:
2. Assertion (A): At room temperature the fermi level in p type semiconductor lies nearer
to the valence band and in n type semiconductor it lies nearer to the conduction band.
Reason (R): At room temperature, the p type semiconductor is rich in holes and n type
semiconductor is rich in electrons.
Answer: Option A
Explanation:
No answer description available for this question. Let us discuss.
3. The drift velocity of electrons and holes is proportional to electric field strength.
A. True B. False
Answer: Option A
Explanation:
Answer: Option A
Explanation:
A. microwaves
B. ultrasonic waves
C. musical waves
D. resonant waves
Answer: Option B
A. Silicon
B. Calcium arsenide
C. Germanium
D. Zinc sulphide
Answer: Option B
Explanation:
7. At absolute temperature
Answer: Option C
Explanation:
8. If E is electric field intensity, the current density due to field emission is proportional to
A. E B. E2
C. E2.5 D. E3/2
Answer: Option B
Explanation:
9. When a high voltage reference is required it is advantageous to use two or more zener diodes in
series to allow
A. higher voltage
B. higher dissipation
Answer: Option D
Explanation:
Reason (R): When a p-n junction is forward biased, free electrons cross the junction
from n to p and holes from p to n.
Answer: Option A
11. Pentavalent impurity creates n type semiconductor.
A. True B. False
Answer: Option A
Explanation:
Answer: Option A
Explanation:
A. True B. False
Answer: Option B
Explanation:
Answer: Option D
Explanation:
B. KH =
C.
KH =
D. KH = ()1.2
Answer: Option A
16. When a diode is forward biased, the diode current is
A. high
B. low
C. zero
D. low or zero
Answer: Option A
Explanation:
A.
B.
C. peμp
D.
Answer: Option C
Explanation:
A. holes
B. electrons
C. ions
Answer: Option D
Explanation:
A. PIN diode
B. LED
C. Photo diode
D. Schottky diode
Answer: Option D
Explanation:
20. A d.c. power supply has an open circuit voltage of 100 V. When the full load current is
drawn, the output drops to 80 V. The percentage voltage regulation is
A. 97.25% B. 75%
C. 50% D. 25%
Answer: Option D
increases with higher values of filter capacitance and decreases with more
A.
load current
decreases with higher values of filter capacitance and increases with more
B.
load current
decreases with higher values of filter capacitance as well as with more load
C.
current
increases with higher values of filter capacitance as well as with more load
D.
current
Answer: Option A
Explanation:
A. doping B. collision
C. recombination D. ionization
Answer: Option B
Explanation:
A. VGS = VDS
C. VGS = 0
D. VGS is negative
Answer: Option C
Explanation:
24. The holes diffuse from P-region to the N-region in a P-N junction diode because
there is greater concentration of holes in the P-region as compared to N-
A.
region
Answer: Option A
Explanation:
A. reverse current
B. forward current
C. reverse breakdown
D. forward breakdown
Answer: Option A
A. is always zero
Answer: Option C
Explanation:
27. In commercial electron tubes the current produced by the cathode at 1000 K is about
Answer: Option B
Explanation:
A. True B. False
Answer: Option A
Explanation:
A. P-type semiconductor
B. N-type semiconductor
C. N-P-N transistor
D. P-N-P transistor
Answer: Option D
Explanation:
A. maximum for VGS = 0 and minimum for VGS negative and large
B. minimum for VGS = 0 and maximum for VGS negative and large
C. maximum for VGS = 0 and minimum for VGS positive and large
D. minimum for VGS = 0 and maximum for VGS positive and large
Answer: Option A
Explanation:
A. IE = nICIEC0
B. IE = IIC + IC0
C. IE = nIC + IC0(eqVEB/KT-1)
D. IE = IIC + IE0(eqVEB/KT - 1)
Answer & Explanation
Answer: Option D
Explanation:
A. hard materials
B. brittle materials
Answer: Option D
Explanation:
No answer description available for this question. Let us discuss.
A. recombination
B. covalent bonding
C. thermal union
Answer: Option A
Explanation:
35. Which of the following semiconductor has the highest melting point?
A. Germanium
B. Silicon
C. Gallium arsenide
D. Lead sulphide
Answer: Option D
36. The equivalent circuit of an ideal diode is
A. a charging condenser
B. a discharging condenser
C. a switch
D. a resistor
Answer: Option C
Explanation:
C. Leakage current
Answer: Option A
Explanation:
38. The small signal input impedance of a transistor whose output is shorted for the measuring signal
is
A.
B.
C.
D.
Answer: Option A
Explanation:
39. Assertion (A): The frequency of light used for photoelectric emission is high.
Answer: Option A
Explanation:
Answer: Option D
41. Gel is
B. a polymer having secondary chains branching from the main molecular chain
C. a solid frame work of colloidal particles linked together and containing a fluid
D. a polymer in which the repeating unit of each molecule has vinyl group
Answer: Option C
Explanation:
Answer: Option B
Explanation:
No answer description available for this question. Let us discuss.
43. Dielectric strength of which of the following material has the highest dielectric strength?
A. Porcelain
B. Soft rubber
C. Glass
D. Joule effect
Answer: Option D
Explanation:
Answer: Option A
Explanation:
45. In common base configuration, the input characteristics of bipolar junction transistor are
drawn between
A. VEB and IE
B. VCB and IC
C. IC and VCE
D. IE and VCE
Answer: Option A
46. Fermi level is the maximum energy that an electron can possess at 0 K.
A. True B. False
Answer: Option A
Explanation:
47. The voltage across the secondary of the transformer in a half wave rectifier (without any
filter circuit) is 25 volts. The maximum voltage on the reverse biased diode will be
A. 100 V
B. 50 V
C. 25 V
D. 12.5 V
Answer: Option C
Explanation:
Answer: Option D
Explanation:
49. Which of the following insulating material is restricted to temperatures below 100°C?
A. Micanite B. Asbestos
C. Teflon D. Polythene
Explanation:
A. reduces gain
C. reduce bandwidth
D. increase noise
Answer: Option A
Section14
A. 1 : 10
B. 1 : 1000
C. 1 : 100000
D. 1 : 108
Answer: Option D
Explanation:
No answer description available for this question. Let us discuss.
Answer: Option B
Explanation:
Answer: Option C
Explanation:
No answer description available for this question. Let us discuss.
4. The kinetic energy of free electrons in a metal is (where k is the de-Broglie wave number
of the electron)
A. inversely proportional to k
C. proportional to k
Answer: Option B
Explanation:
5. The turn on time of an SCR is 5 micro second. Its trigger pulse should have
Answer: Option C
6. The cut in voltage
C. is a reverse voltage
Answer: Option D
Explanation:
C. 50 Hz in the dc output of half wave and 100 Hz in the dc output of full wave
D. 100 Hz in the dc output of half wave and 50 Hz in the dc output of full wave
Answer: Option C
Explanation:
8. For an insulating material, dielectric strength and dielectric loss should be respectively
Answer: Option C
Explanation:
9. Semiconductors have
Answer: Option C
Explanation:
10. The dipole moment per unit volume as a function of E in the case of an insulator is
given by (symbols have the usual meaning).
A. P = ε0E (εr - E)
B. P = ε0 E
C.
P=
D.
P=
Answer: Option A
11. The I/P impedance (Zi) and the O/P impedance (Zo) of an ideal trans conductance
(Voltage controlled current source) amplifier are
A. Zi = 0, Zo = 0
B. Zi = 0, Zo = ∞
C. Zi = ∞, Zo = 0
D. Zi = ∞, Zo = ∞
Answer: Option D
Explanation:
12. The relation between thermionic emission current and temperature is known as
C. Ohm's law
D. Boltzmann's law
Answer & Explanation
Answer: Option A
Explanation:
13. Assertion (A): When forward biased a p-n junction has low resistance.
Answer: Option B
Explanation:
Answer: Option A
Explanation:
15. For a P-N junction diode, the current in reverse bias may be
A. few amperes
C. few milliamperes
Answer: Option D
A. holes
B. protons
C. electrons
D. negative ions
Explanation:
A. zero
B. negative
Answer: Option C
Explanation:
18. When atoms are held together by the sharing of valence electrons
Explanation:
19. Thermal runaway is not possible in FET, because as the temperature of FET increases.
Answer: Option B
Explanation:
20. Which of the following pairs of semiconductors and current carriers is correctly matched?
Answer: Option A
21. If E is energy level of electron and EF is Fermi level, then
Answer: Option A
Explanation:
A.
B.
C. T x 11600
D.
Answer: Option B
Explanation:
B. 1 nano sec to 1 μs
Answer: Option C
Explanation:
24. In the forward blocking region of a silicon, controlled rectifier, the SCR is
A. in the off-state
B. in the ON state
C. reverse biased
Answer: Option A
Explanation:
A. Semiconductor devices
Answer: Option C
26. From an n channel JFET for VDS constant and if VGS is made more negative, pinch off would occur
at
Answer: Option C
Explanation:
27. The diode and the moving coil milliammeter of figure are assumed to be ideal. The meter reading
is
A. 0.1 mA
B.
C.
D.
Answer: Option D
Explanation:
Answer: Option D
Explanation:
29. The V-I characteristic of a semi-conductor diode is shown in figure. From this figure it can be
concluded that
A. The diode is a silicon diode
Answer: Option A
Explanation:
A. impurification B. pollution
C. deionisation D. doping
Answer: Option D
31. The electron and hole concentration in a intrinsic semiconductor are ni and Pirespectively when
doped with a P type material, these change to n and P, respectively. Then
A. n + P = ni + Pi
B. n + ni = P + Pi
C. nPi = niP
D. nP = ni Pi
Answer: Option D
Explanation:
32. The energy to cause thermionic emission is supplied by heating the cathode.
A. True B. False
Answer: Option A
Explanation:
33. Assertion (A): In an n-p-n transistor as the electrons enter the collector region, they are
accelerated towards the collector terminal.
Explanation:
34. Assertion (A): In reverse biased p-n junction, the reverse saturation current is nearly constant if
the reverse voltage is less than critical value.
Reason (R): The total reverse current is sum of reverse saturation current and surface leakage
current.
Answer: Option B
Explanation:
A. 9.1 x 10-27 kg
B. 9.1 x 10-29 kg
C. 9.1 x 10-31 kg
D. 9.1 x 10-35 kg
Answer: Option A
Explanation:
Answer: Option C
Explanation:
B. ni(T) = A (- E8/2kT)10
Answer: Option D
Explanation:
39. Electrical contact materials used in switches, brushes and relays must possess
Answer: Option A
Explanation:
A. VGS = 0
C. VGS = VDS
Answer: Option D
41. The effect of a finite gain of operational amplifier used in an integrator is that
Answer: Option B
Explanation:
42. The ripple factor from a capacitor filter __________ as the load resistance __________
.
A. decreases, decreases
B. decreases, increases
C. increases, decreases
D. increases, increases
Answer: Option B
Explanation:
43. Of the various capacitances associated with a junction transistor the gain bandwidth
product is affected to maximum extend by
Answer: Option D
Explanation:
44. Choose proper substitutes for x and y to make the following statement correct.
Tunnel diode, Avalanche photodiode are operated in x bias and y bias respectively.
A. x : Reverse, y : Reverse
B. x : Reverse, y : forward
C. x : Forward, y : Reverse
D. x : forward, y : forward
Answer: Option C
Explanation:
45. Assertion (A): When a zener diode breakdown, occurs the voltage across it is
constant.
Reason (R): The upper limit of zener current is determined by power handling
capacity.
Answer: Option B
Of these statements
A. 1, 2, 3 and 4 are correct
Answer: Option A
Explanation:
47. If 10 V is the peak voltage across the secondary of the transformer in a half wave
rectifier (without any filter circuit), then the maximum voltage on the reverse biased
diode will be
A. 20 V
B. 14.14 V
C. 10 V
D. 7.8 V
Answer: Option C
Explanation:
48. In energy band diagram of p type semiconductor the acceptor energy level is
A. in valence band
B. in conduction band
Answer: Option C
Explanation:
49. Given a power supply filter circuit, what measurements must be made of determine
percentage regulation
Answer: Option B
Explanation:
A. depletion mode
B. conduction mode
C. enhancement mode
Answer: Option C
Section 15
A. 0.051 eV
B. 0.026 eV
C. 0.01 eV
D. 0.001 eV
Answer: Option B
Explanation:
2. If E is energy level of electron and EF is fermi level, and T = 0 and E > EF, then
Answer: Option A
Explanation:
Answer: Option A
Explanation:
A. 4 B. 2
C. 1 D. 0
Answer: Option A
Explanation:
A. active region
B. ohmic region
Answer: Option C
6. Figure represents a
A. Diode rectifier
B. Schottky diode
C. Varistor
Answer: Option B
Explanation:
Answer: Option C
Explanation:
Answer: Option B
Explanation:
A. metals
B. semiconductors
C. insulators
Answer: Option A
Explanation:
Answer: Option C
11. Figure shows the terminals of a transistor in plastic package TO 18. Then
Answer: Option B
Explanation:
Answer: Option A
Explanation:
No answer description available for this question. Let us discuss.
A. forward bias
B. reverse bias
C. zero bias
Answer: Option A
Explanation:
A. PIN diode
B. Photo diode
C. Tunnel diode
D. Schottky diode
Answer: Option D
Explanation:
No answer description available for this question. Let us discuss.
B. diode rating
Answer: Option D
16. Assertion (A): When light falls at junction of p-n photodiode, its p side
becomes positive and n side becomes negative.
Answer: Option A
Explanation:
B. saturation
C. active
Answer: Option A
Explanation:
18. In a JFET
C. gate source cut off voltage is twice the pinch off voltage
Answer: Option D
Explanation:
19. A power supply has full-load voltage of 20 V. What will be its no load
voltage when its voltage regulation is 100%
A. 0V
B. 10 V
C. 20 V
D. 40 V
Answer: Option D
Explanation:
20. For a photo conductor with equal electron and hole mobilities and
perfect ohmic contacts at the ends, an increase in the intensities of
optical illumination results in
C. a reduction resistance
D. an increase of resistance
Answer: Option C
21. Holes act like
A. positive charges
B. neutral atoms
C. negative charges
D. crystals
Explanation:
22. Assertion (A): Silicon is less sensitive to changes in temperature than germanium.
Answer: Option A
Explanation:
A. 32 B. 28
C. 14 D. 4
Answer: Option C
Explanation:
Answer: Option C
Explanation:
Answer: Option A
26. An amplifier with resistive -ve feedback has two left poles in its open loop transfer function. The
amplifier
Answer: Option B
Explanation:
27. Amplification of ultrasonic waves is possible in a piezoelectric semiconductor under applied electric
field. The basic phenomenon involved is known as
A. electrostriction
B. acousto-optic interaction
C. acousto-electric interaction
Answer: Option C
Explanation:
28. For a junction FET in the pinch off region, as the drain voltage is increased, the drain current
A. becomes zero
B. abruptly decrease
C. abruptly increases
D. remains constant
Answer: Option D
Explanation:
A. IC = βIB
B. IC > βIB
D. IC < βIB
Answer: Option D
Explanation:
30. In which mode of BJT operation are both junctions reverse biased?
A. Active
B. Saturation
C. Cut off
D. Reverse active
Answer: Option C
31. In a junction transistor biased for operation at emitter current 'IE' and collector current
'IC' the transconductance 'gm' is.
A.
B.
C.
D.
Answer: Option B
Explanation:
32. Ferrities are particularly suited for high frequency applications because of their
A. low distortion
C. high conductivity
D. high mobility
Answer: Option B
Explanation:
Answer: Option A
Explanation:
A. energy only
B. momentum only
Answer: Option C
Explanation:
35. In a forward biased p-n junction current enters p material as hole current and
leaves nmaterial as electron current of the same magnitude.
A. True B. False
Answer: Option A
36. When P-N junction is in forward bias, by increasing the battery voltage
Answer: Option B
Explanation:
A. intrinsic semiconductor
B. extrinsic semiconductor
C. P-type semiconductor
D. N-type semiconductor
Answer: Option A
Explanation:
A. Transformer
C. Electric bulb
D. Loudspeaker
Answer: Option B
Explanation:
39. Assertion (A): The forward dynamic resistance of p-n diode varies inversely with
current.
Reason (R): The forward dynamic resistance of p-n diode varies with the operating
voltage.
Answer: Option B
Explanation:
40. If E (i.e., available energy state) = EF(i.e., Fermi level), then probability that state E will
be occupied is 0.5 for any temperature T.
A. True B. False
Answer: Option A
41. CE saturation resistance of n-p-n transistor is
A.
B.
C.
D.
Answer: Option B
Explanation:
A. visible region
B. infrared region
Answer: Option D
Explanation:
43. The rate of change of excess carrier density is proportional to carrier density.
A. True B. False
Answer: Option A
Explanation:
A. radio receivers
C. T.V. Receivers
D. band of freq. selected and amplified
Answer: Option B
Explanation:
45. The main reason why Ni-Zn ferrites are used for audio and T.V. transformers is that
Answer: Option A
46. Assertion (A): Intrinsic semiconductor is an insulator at 0 K.
Reason (R): Fermi level in intrinsic semiconductor is in the centre of forbidden energy
band.
Answer: Option A
Explanation:
No answer description available for this question. Let us discuss.
47. Typical values of h parameters at about 1 mA collector current for small signal audio
amplifier in CE configuration are :
Answer: Option B
Explanation:
48. A CMOS amplifier when compared to an N-channel. MOSFET, has the advantage of
D. lower current drain from the power supply, there by less dissipation
Answer: Option A
Explanation:
No answer description available for this question. Let us discuss.
49.
Dynamic resistance of diode is
A. True B. False
Answer: Option A
Explanation:
50. The presence of some holes in an intrinsic semiconductor at room temperature is due to
A. valence electrons
B. doping
C. free electrons
D. thermal energy
Answer: Option D
Section 16
Answer: Option C
Explanation:
Answer: Option A
Explanation:
A. Mica
B. Paraffin wax
C. Air
D. Mineral oil
Answer & Explanation
Answer: Option C
Explanation:
Answer: Option B
Explanation:
Answer: Option B
6. In a bipolar transistor, the base collector junction has
A. forward bias
B. reverse bias
C. zero bias
Answer: Option B
Explanation:
7. An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is
increased
B. the number of free electrons increases but the number of holes decreases
C. the number of free electrons and holes increase by the same amount
D. the number of free electrons and holes increase but not by the same amount
Answer: Option C
Explanation:
8. What is the necessary a.c. input power from the transformer secondary used in a half wave
rectifier to deliver 500 W of d.c. power to the load?
A. 1232 W
B. 848 W
C. 616 W
D. 308 W
Answer: Option A
Explanation:
Answer: Option C
Explanation:
Answer: Option A
11. For a NPN bipolar transistor, what is the main stream of current in the base region?
A. Drift of holes
B. Diffusion of holes
C. Drift of electrons
D. Diffusion of electrons
Answer: Option B
Explanation:
12. Assertion (A): A VMOS can handle much larger current than other field effect transistors.
Answer: Option C
Explanation:
A. diffusion process
B. oxidation
C. evaporation
D. none
Answer: Option A
Explanation:
B. No hysteresis
Answer: Option C
Explanation:
15. In case of photo conductor for germanium when forbidden energy gap is 0.72 eV, the critical
wavelength for intrinsic excitation will be
A. 1.43 m
B. 1.43 mm
C. 1.73 mm
D. 1.73 x 1012 m
Answer: Option C
16. In the sale of diamonds the unit of weight is carat. One carat is equal to
A. 100 mg
B. 150 mg
C. 200 mg
D. 500 mg
Answer: Option C
Explanation:
B. 1V
C. 7.07 V
D. 8.56 V
Answer: Option C
Explanation:
Answer: Option D
Explanation:
Reason (R): In beyond pinch off region the current in JFET is nearly constant.
Answer: Option A
Explanation:
20. Permalloy is
B. a polymer
Answer: Option D
21. Which of the following could be the maximum current rating of junction diode by 126?
A. 1A
B. 10 A
C. 20 A
D. 100 A
Answer: Option A
Explanation:
A. 6 MOS transistor
Answer: Option A
Explanation:
Answer: Option A
Explanation:
A. extremely small
B. -H
C. -1
D. Zero
A. 1 B. 2
C. 3 D. 4
Answer: Option C
31. For a UJT if
R1 = Resistor from emitter to the base 1
R2 = Resistor from emitter to the base 2 and RBB = R1 + R2, then the intrinsic stand off
ratio (η) is
A.
B.
C.
D.
Answer: Option D
Explanation:
32. The kinetic energy of free electrons in a metal is (where k is de-Broglie wave number of
the electrons)
A.
∝
B.
∝
C. μk
D. μk2
Answer: Option B
Explanation:
A. T B. T2
C. T3 D. T-2
Answer: Option C
Explanation:
C. is constant
Answer: Option A
Explanation:
A. thermocouple
B. thermometer
C. miniature resistance
Answer: Optio
36. When diodes are connected in series to increase voltage rating the peak inverse voltage
per junction
Answer: Option C
Explanation:
37. Hall effect is observed in a specimen when it is carrying current and is placed in a
magnetic field. The resultant electric field inside the specimen is
Answer: Option A
Explanation:
A. reverse, voltage
B. forward, current
C. forward, voltage
D. reverse, current
Answer: Option A
Explanation:
39. Silicon is not suitable for fabrication of light emitting diodes because it is
Answer: Option A
Explanation:
Answer: Option B
41. Power diodes are generally
A. silicon diodes
B. germanium diodes
Answer: Option A
Explanation:
42. The inductance of a single layer solenoid of 10 turns is 5 μH. Which one of the following
is the correct value of inductance when the number of turns is 20 and the length is
doubled.
A. 10 μH
B. 20 μH
C. 40 μH
D. 5 μH
Answer: Option A
Explanation:
Answer: Option C
Explanation:
No answer description available for this question. Let us discuss.
A. 10 eV
B. 5 eV
C. 2 eV
D. 0.78 eV
Answer: Option D
Explanation:
B. intrinsic semiconductor
Answer: Option C
46. Fermi level is the amount of energy in which
Answer: Option C
Explanation:
47. When avalanche breakdown occurs covalent bonds are not affected.
A. True B. False
Answer: Option B
Explanation:
A. True B. False
Answer: Option A
Explanation:
A. 1 μA
B. 10 μA
C. 5 μA
D. 35 μA
Answer: Option D
Explanation:
A. acceptor atoms
B. donor atoms
C. pentavalent impurity
D. trivalent impurity
Answer: Option D
51. The term efficacy, is defined by
A. same as efficiency
D. (efficiency)2
Answer: Option B
Explanation:
52. The addition of p type impurity to intrinsic material creates allowable energy levels.
Answer: Option D
Explanation:
Answer: Option B
Explanation:
A. first band
B. second band
C. third band
D. conduction band
Answer: Option D
Explanation:
A. 1.56 μ ohm-cm
B. 3.95 μ ohm-cm
C. 14.55 μ ohm-cm
D. 22.05 μ ohm-cm
Answer: Option A
56. As compared to bipolar junction transistor, a FET
A. is less noisy
Answer: Option D
Explanation:
57. For a P-N diode, the number of minority carriers crossing the junction depends on
B. potential barrier
Answer: Option C
Explanation:
A.
B.
C.
D.
Answer: Option A
Explanation:
A. LED B. Varistor
C. SCR D. Diac
Answer: Option A