Documente Academic
Documente Profesional
Documente Cultură
I. INTRODUCTION
a)
Fig. 2. Schematic view of the blocks composing the system: a) Divider-by-2. b) 18GHz output buffer. c) 36 and 72 GHz output stage.
For a given bias current of the TIA the loop gain can be For the output matching network, both buffers use baluns.
increased by increasing both RI and Rf or by increasing the Indeed, the 50 n output load is transfonned to the optimum
bias current of the transconductance stage in the double impedance at the cascode transistor collector.
balanced mixer. The cutoff frequency of the loop gain is Electromagnetic (EM ) simulations of the PAD were
determined by both the mixer and the TIA. Increasing the TIA performed to characterize it. S-parameters (for different
bias current increases its cutoff frequency. Note that RI, Rf, 11 frequencies in a broad frequency range) were taken into
(the DC current passing through Ml) and 12 (the DC current account during the simulations and all the stages of the design,
passing through M 2) should be carefully chosen to let enough including the input/output matching network. In a similar way,
voltage room for the Vds voltage of the bias transistor Ml. EM simulations for the interconnections associated to the
layout were performed and considered in the design of both
B. Output Buffers
input/output matching networks of the 36 GHz buffer. For the
The designs are based on the cascode amplifiers in figures 18 GHz buffer, a similar approach was used but, due to its
2(b) and 2(c). This topology provides good input/output port lower frequency, the impact of the interconnections in the
isolation while providing adequate power gain [ 8]. In both layout was evaluated using a RLC extraction.
buffers, for a power supply of 2.5 V, a total of 20 rnA (10 rnA Choosing the output of the common emitter node (Fig. 2(c))
per branch) of DC current was enough to provide a simulated the signal at 2 xfo can be obtained. This technique is inspired
output power> 3 dBm over a 50 Ohms load. In both buffers, from the frequency doubler described in [ 2]. Note that the
the common-emitter transistor is a high-speed NPN with resistance RbI sets the current in the amplifier. The inductance
emitter area chosen for maximum ft. For cascode transistors a LmI and capacitance Cm4 were set to maximize the output
high-voltage NPN was used. power. This modification proves to be enough for a targeted
Since the previous stage of both buffers is an emitter-follower simulated output power of -20 dBm in the frequency band.
(i.e., a stage with low output impedance), a strategy based on
strong matching 9 [ ] is used. In the strong impedance matching III. SYSTEM INTEGRATION, LAYOUT CONSIDERATIONS AND
technique a low output (input) impedance is matched with a MEASUREMENTS
high input (output) impedance. Thus, a high input impedance All blocks in the system work in differential mode up to the
buffer is targeted. This can be accomplished by resonating (at output buffers where the differential to single-ended
the frequency of interest) the capacitive input impedance of conversion of the fo and fol2 signals takes place. The sub
the buffers with a parallel inductance. The differential nature harmonic VCO (see Fig. 1) does not share the same voltage
of the signals involved led naturally to the use of a supply (VDD) with the rest of the system. By doing so it is
transfonner. In both designs 1:1 transformers are used. As possible to evaluate the unlocked condition of the system.
observed in the figures 2(b) and 2(c), the center tap at the The system is implemented in the NXP QUBIC4Xi SiGe:C
secondary winding is conveniently used for bias the input BiCM OS process [ 10]. In Fig. 3, a picture of the fabricated
transistor. circuit is presented. A highly compact layout and an area
57
efficient arrangement of the blocks were achieved thanks to 21% of the total power consumption. As a reference, the table
the transformers (baluns) in the input (output) matching II shows a comparison with previous published VCOs; note
networks of the output buffers. Indeed, the placement and that since the system is intended to generate simultaneously
routing between the blocks were carefully performed having three different tones to an external 50n load, standard figure
the LO-core in the center of the die. The block chain for the fo of-merit of VCOs are not well suited for comparisons.
andfol2 signals was disposed at opposite sides of the die and
IV. CONCLUSIONS
therefore minimizing unwanted coupling between the ports.
Since all DC-pads were located at the same side of the die, a A tri-band low phase noise LO generation system suitable for
single DC multi-contact wedge was used, thus enabling fully a Ku/E multiband front-end radio was successfully
on-die characterization of the circuit. demonstrated. Based on a low-phase noise sub-harmonic VCO
During the measurements, the fo, fol2 and 2 xfo ports were the system generates simultaneously LO signals at three
always loaded with a 50 n impedance. different RF outputs fo, fol2 and 2 xfo with adequate output
power and tuning range.
Fig. 3. Photograph of the fabricated chip. Chip size: 2000 J.lm by 800 J.lm
58
36G 000 ACKNOWLEDGMENT
59