EE1&ISE1 ANALOGUE ELECTRONICS 2008/2009

ABOUT THE COURSE

Introduction

In this course we shall look at a range of circuits built around bipolar junction transistors
(BJTs) and field effect transistors (FETs). These devices form the backbone of all analogue
and digital integrated circuits. The circuits we will be studying include single-transistor
amplifiers and switching elements, together with two of the most important building blocks
of analogue integrated circuits: the differential amplifier and the current mirror.

The emphasis throughout will be on how we, as electrical engineers, can use BJTs and FETs
to make useful circuits. Our starting point in each case will be the terminal characteristics of
the device in question. We will not spend too much time worrying about how these
characteristics come about - for those of you on the EE course, this aspect will be covered in
Dr Fobelets’ “Semiconductor Devices” course; it is also discussed in all of the textbooks
listed below. We will draw heavily on material from Mr Brookes’ “Analysis of Circuits”
course, so you should make every effort to become familiar with this.

Course Organisation

This year the Analogue Electronics course will comprise a series of 18 lectures, together with
study groups and related experiments in the First Year Laboratory.

The lectures divide into five roughly equal blocks as shown in the synopsis overleaf. Initially
we will concentrate on single-transistor circuits employing BJTs and FETs; we will then go
on to look at some more complex circuits.

Lecture notes and a problem sheet will be distributed for each part of the course. You are
strongly advised to attempt the problems, preferably as we go along. They will help you to
follow the lectured material, and prepare you for the summer exams.

Sources of Information

The recommended textbook for this course is the one by Sedra and Smith listed below; you
should obtain your own copy of this text if possible. This book contains good coverage of all
the material in the course, and there are numerous worked examples and problems for each
topic. You may also find the other two books useful.

Microelectronic Circuits (Recommended text)

AS Sedra and KC Smith, OUP, 5th Edition (3rd and 4th Editions also ok)

Electronics
AR Hambley, Prentice Hall, 2nd Edition

Microelectronic Devices and Circuits

Fonstad, McGraw Hill (out of print, but held in library)

If you have any problems relating to the course which cannot be sorted out in study
groups/tutorials, please e-mail me (a.holmes@imperial.ac.uk) to arrange a time for a meeting.
My office is Room 701, E&EE Dept.

EE1&ISE1 Analogue Electronics 2008/2009 - Intro/Synopsis ASH 1

 EE1&ISE1 ANALOGUE ELECTRONICS 2008/2009
COURSE SYNOPSIS

Part 1 - Bipolar Junction Transistors (4 lectures)

---------------------------------------------------------------------------------
Physical structure and modes of operation
Operation in active mode; operating curves
Common-emitter amplifier - a first look
Bias stabilisation
BJT as a switch
---------------------------------------------------------------------------------

Part 2 - Small-Signal Analysis (4 lectures)

---------------------------------------------------------------------------------
Introduction - basic principles
Small-signal models for 2-terminal devices
Small-signal BJT model; Early effect
Common-emitter amplifier revisited
Macro-models
Frequency response; AC and DC coupling
---------------------------------------------------------------------------------

Part 3 - Field Effect Transistors (4 lectures)

---------------------------------------------------------------------------------
Physical structure and operation; MOSFET types and symbols
Operating curves
Small-signal models
Common-source amplifier
Active loads; Body effect
---------------------------------------------------------------------------------

Part 4 - Some Important Analogue Building Blocks (3 lectures)

---------------------------------------------------------------------------------
Current mirror - as tail-current source, as active load
Differential amplifier
Emitter follower
Output stages
Operational amplifier - outline
---------------------------------------------------------------------------------

Part 5 – Transients and Oscillators (3 lectures)

---------------------------------------------------------------------------------
Transient behaviour of RC and RL networks - recap
Transients in switched transistor circuits
Transistor oscillator circuits
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EE1&ISE1 Analogue Electronics 2008/2009 - Intro/Synopsis ASH 2

 EE1&ISE1 ANALOGUE ELECTRONICS 2008/2009
AIMS and OBJECTIVES

Aims

The aim of this course is to familiarise you with bipolar junction and field effect transistors,
and to introduce a number of important circuit applications of these devices. The course also
aims to develop basic skills in linear circuit analysis.

Objectives

By the end of the course, you should be able to:

• Explain qualitatively the operation of all of the following:

• Common-emitter (or common-source) amplifier

• Active load
• Current mirror
• Differential amplifier
• Emitter follower

• Determine the operating modes and bias conditions of the transistors in the above
configurations and in other simple circuits

• Understand the small-signal models of BJTs and FETs at low frequencies, and use them
to determine the small signal parameters for the above configurations and for other simple
transistor circuits

• Determine the transient behaviour of circuits containing single transistor switches with
reactive loads

• Explain the operation of single-transistor oscillator circuits.

EE1&ISE1 Analogue Electronics 2008/2009 - Intro/Synopsis ASH 3

 VOLTAGE AND CURRENT SOURCE NOTATION
There are some differences in notation between Mr Brookes’ Analysis of Circuits notes and my notes for this course. This should not cause you
any real difficulty, but if you get confused the table below should be helpful.

Source type This course Analysis of Circuits course Notes

1) V = V1 – V2 where V1 and V2 are the terminal voltages of the
DC or bias source referred to a common ground
2) Terminal 1 is identified by long line or by “+” sign
voltage source
3) If source is unlabelled (i.e. V is unspecified), you should assume
V1 > V2

1) v = v1 – v2 where v1 and v2 are the small-signal voltages on

Small-signal terminals 1 and 2
2) Terminal 1 is identified by arrow head or by “+” sign
voltage source
3) Different shapes on RHS denote independent (circular) and
controlled (square) sources

1) Current flow is in direction of arrow if I > 0 and against arrow

DC or bias if I < 0
2) Different shapes on RHS denote independent (circular) and
current source
controlled (square) sources

1) Current flow is in direction of arrow when i > 0 and against

Small-signal arrow when i < 0
2) Different shapes on RHS denote independent (circular) and
current source
controlled (square) sources

Additional notes:
1) the symbols used in this course do not distinguish between independent and controlled sources. Instead, if a source is controlled, its current or
voltage will be expressed as a function of another current or voltage in the circuit
2) note the use throughout of upper case for DC/bias source variables and lower case for small-signal source variables

EE1&ISE1 Analogue Electronics 2008/2009 - Intro/Synopsis ASH 4

Preamble to Part 1 – The p-n Junction The p-n Junction at Equilibrium

Some key concepts: A p-n junction is formed at the interface between n-type and p-type regions in a
semiconductor.
 Electron states in a solid are grouped into ENERGY BANDS; these bands Because the electron concentration is much higher in the n-type region than in
are typically separated by ENERGY GAPS in which no electron states the p-type, electrons will tend to DIFFUSE from the n- side to the p- side.
exist. However, this leaves a nett positive charge on the n- side, resulting in an electric
field which tends to produce an electron flow in the opposite direction. At
 In a semiconductor at low empty Conduction equilibrium, these effects exactly balance, and the nett electron current is zero.
temperature, bands up to and band A similar argument applies to the hole current.
including the VALENCE Eg

Energy
BAND are full of electrons; the p-type n-type
CONDUCTION BAND (the Full Valence
band h+ diff
next band up), and all higher p >> n n >> p
energy bands, are empty. e- diff

Electrons in bands which are either completely empty or completely full

cannot contribute to conduction, so a semiconductor at low temperature
will not conduct.

 At higher temperatures, some Electron in

electrons will have enough conduction band Electric field
thermal energy to ‘jump’ across
the energy gap into the Eg
At equilibrium:

Energy
conduction band; these Hole in
electrons, and the HOLES they valence band Hole diffusion
leave behind in the valence Hole drift
band, can both contribute to Nett current = 0
Electron diffusion
conduction, so the semiconductor will show some conductivity.
Electron drift
 By doping the semiconductor, we can increase the numbers of electrons or
holes to make n-type or p-type material: Electric potential
n-type (n>>p) p-type (p>>n) (x)

Built-in voltage

Conduction predominantly by Conduction predominantly by We can think of the built-in voltage as a ‘POTENTIAL BARRIER’ which
electrons in conduction band holes in valence band opposes the diffusion of electrons from n- to p- and holes from p- to n-.

EE1&ISE1 Analogue Electronics 2008/2009 – Part 1 Preamble ASH 1 EE1&ISE1 Analogue Electronics 2008/2009 – Part 1 Preamble ASH 2
p-n Junction in FORWARD BIAS I-V Characteristics of a p-n Junction

Vd Behaviour in both forward and reverse bias is described by the Ebers-Moll

Equation:

  V  
h+ I  IS exp   1
p n   VT  
e- Barrier height
reduced
where IS is the reverse saturation current, and VT = kT/e is the thermal voltage
(x) 
Large FORWARD ( 25 mV at room temp)
CURRENT
I
V
x
p n

I
p-n Junction in REVERSE BIAS
 V
I  IS exp 
 VT 

h+ REVERSE FORWARD
p e-
n
Barrier height
increased
V
(x) 
Small REVERSE  0.7
CURRENT
I   IS (small)
x

NB: For a more detailed explanation of how a p-n junction works, see e.g.
“Microelectronic Devices” by K D Leaver, IC Press, 2nd Ed

EE1&ISE1 Analogue Electronics 2008/2009 – Part 1 Preamble ASH 3 EE1&ISE1 Analogue Electronics 2008/2009 – Part 1 Preamble ASH 4
 Bipolar Junction Transistors BJT - Operation in Active Mode
n p n
• Physical Structure & Symbols
• NPN IEn electrons
E C

n-type p-type n-type C IE { IEp holes recombination IC

Emitter Base Collector
Emitter region region region Collector
(E) (C) B
B
IB
Emitter-base Base Collector-base
junction (EBJ) (B) junction E
(CBJ)
(a) (b)
• IEn , IEp both proportional to exp(VBE/VT)
• PNP - similar, but:
• IC  IEn
• N- and P-type regions interchanged
• Arrow on symbol reversed  IC  IS exp(VBE/VT) (1.1)

• IB  IEp << IEn

• Operating Modes
 can write IC = IB where  large (1.2)
Operating mode EBJ CBJ

Cut-off Reverse Reverse -15 -12

• IS = SATURATION CURRENT (typ 10 to 10 A)
Active Forward Reverse
Saturation Forward Forward
• VT = THERMAL VOLTAGE = kT/e  25 mV at 25 C
Reverse-active Reverse Forward •  = COMMON-EMITTER CURRENT GAIN (typ 50 to 250)

• Active Mode - voltage polarities for NPN • Active Mode Circuit Model

IB IC
IC B C
VCB > 0 C  IB
B
IB IE = IB + I C
VBE > 0 E
E
IE

EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 1 EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 2
 BJT Operating Curves - 1 BJT Operating Curves - 2
-13
• INPUT-OUTPUT IC vs VBE (for IS = 10 A) • OUTPUT IC vs VCE (for  = 50)

IC (mA) IC (mA)
100 12 SAT
ACTIVE
IB = 200 µA
IC 10 IC
80 VCB > 0
ACTIVE C IB = 160 µA C
CUT-OFF 8
60 B B
IB = 120 µA VCE
6
40 IB = 80 µA
VBE E 4 IB E
20 IB = 40 µA
2
VBE (V) 0 VCE (V)
0.0 0.2 0.4 0.6 0.8 0 1 2

• ACTIVE REGION: • ACTIVE REGION (VCE > VBE):

• IC  0 for VBE <  0.5 V • IC =  IB , regardless of VCE
• IC rises very steeply for VBE >  0.5 V

• VBE  0.7 V over most of useful IC range i.e. CONTROLLED CURRENT SOURCE

• SATURATION REGION (VCE < VBE):

• IB vs VBE similar, but current reduced by factor 
• IC falls off as VCE  0

• CUT-OFF REGION: • VCEsat  0.2 V on steep part of each curve

• IC  0

• Also IB , IE  0 • In both cases:

• VBE  0.7 V if IB non-negligible

EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 3 EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 4
 Summary of BJT Characteristics Common-Emitter Amplifier
Conceptual Circuit
VCB > 0
CUT-OFF ACTIVE
RC
• IC  0 • IC = IS exp(VBE /VT)
IC
• IB  0 • IC =  IB
VCC
• VBE  0.7 V if I C non-negligible
VOUT
VBE < 0 VBE > 0 VIN

REVERSE-ACTIVE SATURATION
• IC <  IB
• VBE  0.7 V if I B non-negligible
• VCE < VBE (by definition)
• Assume active mode:
VCB < 0 IC = IS exp(VIN/VT)

• Also IE = IB + IC (always)
• Apply Ohm’s Law and KVL to output side:

• THIS TABLE IS IMPORTANT - GET TO KNOW IT ! VOUT = VCC - RCIC (1.3)

• For PNP table: = VCC - RCIS exp(VIN/VT)

• Reverse order of suffices on all voltages in table

i.e. VCB  VBC etc

• Reverse arrows on currents in circuit NOTE: Called ‘common-emitter’ because emitter is connected to

i.e. arrows on IB, IC point out of PNP device, while arrow on IE reference point for both input and output circuits. Common-Base
and Common-Collector also important.
points in.

EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 5 EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 6
 C-E Amplifier C-E Amplifier
Input-Output Relationship Small-Signal Response - 1

• e.g. VCC = 20 V, RC = 10 k, IS = 10-14 A, VT = 25 mV. Aim: to get quantitative information about the small-signal voltage gain
and the linearity of a C-E amplifier
VOUT (V)
20
VIN • Start with the large signal equations:

VOUT
15
VOUT = VCC - RCIC
= VCC - RC IS exp(VIN/VT)
10

Operating Point • Suppose we add to VIN a small input signal voltage vin, resulting in a
5
corresponding signal vout at the output. We can relate vout to vin by
expanding the above as a Taylor series:
0 VIN (V)
0.50 0.55 0.60 0.65 0.70
VOUT + vout = VCC - RC IC [1 + vin/VT + (vin/VT)2/2 + ..] (1.5)

• Plenty of voltage gain i.e. VOUT >> VIN

• Assuming vin << VT, we can neglect quadratic and higher terms, giving:

BUT:
VOUT + vout  VCC - RCIC - RC(IC/VT)vin vin << VT
• Highly non-linear
 Output distorted unless input signal very small
This is a LINEAR APPROXIMATION, valid only when vin is small
 Need to BIAS transistor to operate in correct region of graph
to get high gain without distortion
Cont’d . .

EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 7 EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 8
 C-E Amplifier Bias Stabilisation - 1
Small-Signal Response - 2
• Biasing at constant VBE is a bad idea, because IS and VT both vary with
• Using (1.3), we can separate the output voltage into BIAS and SIGNAL temperature, and we require constant IC (or IE) for stable operation.
components: Also, IS is not a well-defined transistor parameter.

VOUT = VCC - RCIC Quiescent O/P Voltage • We can obtain approximately constant IE as follows:

vout  - RC(IC /VT)vin Output Signal VCC

RC
• SMALL-SIGNAL VOLTAGE GAIN:

Av = vout/vin = - RCIC /VT = - RC gm (1.10) VBIAS

VOUT + vout
vin L
RE
e.g. If quiescent O/P voltage lies roughly mid-way between the supply
rails then RCIC  VCC /2. In this case Av = -VCC /(2VT), so for VCC = 20 V
we get AV = -400. (a)

The quantity gm= IC/VT is known as the TRANSCONDUCTANCE of the • KVL in loop L (with no signal) gives:
transistor.
IE = (VBIAS - VBE) /RE (1.11)
• LINEARITY
Include higher order terms from Equation 1.5:  (VBIAS - 0.7 V) /RE if VBIAS >> VBE

vout  - Rc gm [ vin + vin 2/2 VT + . . . . ]  IE relatively insensitive to exact value of VBE

Ratio of unwanted quadratic term to linear term is vin/2VT, so expect • Get IC from IC =  IE where  = /(1 + )  1
10 % distortion when vin/2VT  0.1, or vin  5 mV.
•  is the COMMON-BASE CURRENT GAIN
 Amplifier is linear only for very small signals

EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 9 EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 10
 Bias Stabilisation - 2 Bias Stabilisation - 3
Recovery of Small-Signal Voltage Gain
• RE provides NEGATIVE FEEDBACK
• We can recover the original value of Av for AC signals by using a
i.e. if the emitter current starts to rise as a result of some change in BYPASS CAPACITOR:
the transistor’s characteristics, then the voltage across RE rises VCC
accordingly. This in turn lowers the base-emitter voltage of the
RC
transistor, tending to bring the emitter current back down towards
its original value.
 STABILISATION
VBIAS
VOUT + vout
vin RE CE
BUT RE also:
• Reduces small-signal voltage gain:
(b)
Av = - RC gm /(1 + IERE/VT) (1.12)
• Now we have:
 -  RC/RE Av = - RC gm /(1 + IEZE/VT) (1.12b)

• Reduces output swing where ZE is the combined impedance of RE and CE:

ZE = RE /(1 + jRECE)

By making CE large enough, we can make the parallel combination appear

like a short circuit (i.e. | ZE |  0) at all AC frequencies of interest, so that
Equation 1.12b reduces to Av  - RCgm as for our original common-emitter
amplifier. On the other hand, the capacitor has no effect on biasing,
because it passes no DC current.

NB Technique only really relevant to discrete circuits (no big capacitors

inside IC’s!)

EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 11 EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 12
 The BJT as a Switch The BJT as a Switch
Input-Output Relationship - 1
• Now interested mainly in CUT-OFF and SATURATION modes
• e.g. RB = 100 k  = 50, RC = 4.7 k, VCC = 5 V
• Basic circuit:
VCC IC (mA)
2.0 IB VIN
RC
35 µA 4.2 V
IC
30 µA 3.7 V
1.5
RB 25 µA 3.2 V
I
H
VIN IB VOUT G 20 µA 2.7 V
1.0
F
15 µA 2.2 V
E Load Line
0.5 10 µA 1.7 V
D
5 µA 1.2 V
C A, B
• Input side: 0 < 0.7 V
0.0 VCE (V)
0 1 2 3 4 5
For VIN < 0.7 IB  0 (1.13a) (a)

For VIN  0.7 IB  (VIN - 0.7) /RB (1.13b) VOUT (V)

Transistor ‘OFF’
Transistor ‘ON’
• Output side:
VOUT = VCE = VCC - RC IC (1.14) 5
A B

4
• Need to solve Equation 1.14 in all three regions (cut-off, active and
C
saturated)
3
 Use LOAD-LINE METHOD
D
2

E
1 VOUT = VCEsat  0.2 V

G H I
F
0 VIN (V)
0 1 2 3 4 5
(b)

EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 13 EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 14
 The BJT as a Switch The BJT as a Switch
Input-Output Relationship - 2 Choosing IB

• Three regions in lower graph separated by dashed lines: • We need to ensure the transistor will not drift out of saturation and into
the active region when the switch is ‘ON’
Left: • VIN <  0.7 V and transistor is ‘OFF’
• IC  0 • Onset of saturation occurs when the output voltage drops to around 0.7
• VOUT  VCC, and VLOAD  0 V. If we denote the collector current at this point as ÎC, then:
ÎC  (VCC - 0.7)/RC (1.15)
Centre: • Transistor is ACTIVE
• C-E amplifier, but with series input resistance and the corresponding base current is ÎB  ÎC /.

Right: • Transistor is ‘ON’ • To ensure the transistor is driven well into saturation, we actually
i.e. SATURATED apply:
• VOUT = VCEsat  0.2 V, and VLOAD = (VCC - VCEsat) IB = n ÎB = n ÎC / (1.16)

• Key Points: where n = OVERDRIVE FACTOR (typ 2 to 10)

• Transistor provides current gain (i.e. IC >> IB), so low-current input
signal can switch relatively heavy load
• VOUT  when VIN , so circuit performs Logical NOT operation; NOR
also possible by applying several input signals. Early logic (RTL)
used this.
• As the transistor moves further into saturation, VCE drops to around 0.2
V, so the collector current well into saturation is given by:
ICsat  (VCC - 0.2)/RC (1.17)
This is the maximum current the collector circuit can support

• The effective current gain in saturation (i.e. ICsat/IB) is reduced to approx

/n. This quantity is referred to as the FORCED , because its value can
be set arbitrarily (by altering parameters in Equations 1.13b and 1.17)

EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 15 EE1&ISE1 Analogue Electronics 2008/2009 - Part 1 ASH 16
ANALOGUE ELECTRONICS
PROBLEMS 1

1. (a) Using the relation IC = ISexp(VBE/VT) calculate the base-emitter voltage required to
give a collector current of 1 mA in an active BJT for which IS = 10-14 A. (Assume VT = 25
mV)

(b) By considering the ratio of the collector currents for two different base-emitter
voltages, or otherwise, show that the collector current in an active BJT increases tenfold
for a VBE change of about 60 mV.

Hence estimate the range of VBE values for which IC varies from 100 µA to 100 mA in
the transistor of Q1(a).

2. For each of the configurations below, determine the operating mode of the transistor or, if
the mode is indeterminate, state all the possibilities.

5V 5V
5V

(a) (b) (c) (d)

3. Figure Q3a shows the IC-VBE characteristic of a given BJT at temperatures of 15, 25 and
35 ºC. The transistor is to be biased using one of the two configurations shown in Figs
Q3b and Q3c.

(a) With the aid of Figure Q3a, determine the values of VBIAS in Fig Q3b and RE in Fig
Q3c to give IC = 1 mA at 25 ºC.

(b) Using the method of load-lines estimate the maximum and minimum values of IC
occurring in each configuration as the temperature is varied from 15 ºC to 35 ºC. In the
light of your answer, comment on the usefulness of the configuration in Fig Q3b as a
practical biasing arrangement.

NOTE: You may assume IE  IC (i.e.  >> 1)

EE1&ISE1 Analogue Electronics 2008/2009 - Problems 1 ASH 1

 2.00 IC
1.75
35 o C VBIAS
1.50 25 o C
15 o C
1.25
IC 1.00 (b)
(mA)
0.75
IC
0.50
0.25
1V
0.00
0.4 0.5 0.6 0.7 0.8 0.9 1.0 RE
VBE (V)
(a) (c)

Figure Q3

4. (a) For the circuit below, calculate the values of IE and IC when VB = 5 V, assuming the
transistor is in active mode. Hence determine the value of RC required to give VO = 12.5
V when VB = 5 V. (Assume VBE  0.7 V)

(b) With RC as in part (a), what is the maximum value of VB for which the transistor will
remain in the active region?

+ 20 V

RC
VO

 = 100

VB
4.3 k

Figure Q4

EE1&ISE1 Analogue Electronics 2008/2009 - Problems 1 ASH 2

5. (a) Figure Q5 shows a common-emitter amplifier biased for operation at (almost)
constant base current. Choose the value of RB such that the quiescent output voltage lies
mid-way between the power rails for a BJT with  = 100. What is the small-signal
voltage gain of the amplifier in this case? (hint: use Equn 1.10 in the lecture notes)

(b) Assuming RB has the above value, calculate the quiescent output voltages and small-
signal voltage gains for transistors with  = 50 and  = 150.

+6V

10 k
RB
VOUT

VIN

Figure Q5

6. (a) Figure Q6 shows an alternative bias arrangement for the common-emitter amplifier.
Show that for this circuit the quiescent emitter current and output voltage are given by the
equations to the right of the diagram. Hence determine VO when VS = 6 V, RC = 10 k,
RB = 774 k and  = 100. (Assume VBE  0.7)

VS
RC
VS - VBE
RB VO IE = _______________
RC + RB/(1 +  )

VO = VS - RCIE

IE

Figure Q6

(b) Repeat the above calculation to determine the quiescent output voltages for transistors
with  values of 50 and 150. Why is this circuit more tolerant to variations in  than the
one in Question 5 i.e. why do  variations have a smaller effect on the operating point?

EE1&ISE1 Analogue Electronics 2008/2009 - Problems 1 ASH 3

7. The circuit below is to be used to buffer a 5 V logic signal so that it can switch a 1 k
load requiring 12 V. You are given a transistor with a  of 100. What value of RB will
ensure that the transistor is driven into saturation with an overdrive factor of 5? (You may
assume that the logic gate can source up to 1 mA without any drop in output voltage)

+12 V

1 k load

5 V logic
RB
1

Figure Q7

Answers
1 (a) 633 mV; (b) 573 mV to 753 mV
2 (a) active; (b) cut-off; (c) active/saturated; (d) active and PNP!
3 (a) 650 mV, 350 ; (b)  0.6 to 1.8 for Q4b and  0.95 to 1.05 for Q4c
4 (a) IE = 1 mA, IC = 0.99 mA, RC = 7.58 k; (b) 7.73 V
5 (a) 1.77 M, AV = -120; (b) VOUT = 4.5 V, 1.5 V and Av = -60, -180 for  = 50, 150
6 (a) 3.0 V; (b) 3.9 V, 2.5 V for  = 50, 150
7 7.6 k

EE1&ISE1 Analogue Electronics 2008/2009 - Problems 1 ASH 4