BUZ 102 SL

SPP47N05L

SIPMOS ® Power Transistor

• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv /dt rated
• 175°C operating temperature
• also in SMD available Pin 1 Pin 2 Pin 3
G D S

Type VDS ID RDS(on) Package Ordering Code

BUZ 102 SL 55 V 47 A 0.028 Ω TO-220 AB Q67040-S4010-A2

Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 25 °C 47
TC = 100 °C 33
Pulsed drain current IDpuls
TC = 25 °C 188
Avalanche energy, single pulse E AS mJ
ID = 47 A, V DD = 25 V, RGS = 25 Ω
L = 222 µH, Tj = 25 °C 245
Avalanche current,limited by Tjmax IAR 47 A
Avalanche energy,periodic limited by Tjmax E AR 12 mJ
Reverse diode dv/dt dv/dt kV/µs
IS = 47 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C 6
Gate source voltage V GS ± 14 V
Power dissipation P tot W
TC = 25 °C 120

Semiconductor Group 1 30/Jan/1998

 BUZ 102 SL
SPP47N05L

Maximum Ratings
Parameter Symbol Values Unit
Operating temperature Tj -55 ... + 175 °C
Storage temperature Tstg -55 ... + 175
Thermal resistance, junction - case RthJC ≤ 1.25 K/W
Thermal resistance, junction - ambient RthJA ≤ 62
IEC climatic category, DIN IEC 68-1 55 / 175 / 56

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V (BR)DSS V
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C 55 - -
Gate threshold voltage V GS(th)
V GS=V DS, ID = 90 µA 1.2 1.6 2
Zero gate voltage drain current IDSS µA
V DS = 50 V, V GS = 0 V, Tj = -40 °C - - 0.1
V DS = 50 V, V GS = 0 V, Tj = 25 °C - 0.1 1
V DS = 50 V, V GS = 0 V, Tj = 150 °C - - 100
Gate-source leakage current IGSS nA
V GS = 20 V, VDS = 0 V - 10 100
Drain-Source on-resistance RDS(on) Ω
V GS = 4.5 V, ID = 33 A - 0.022 0.028
V GS = 10 V, ID = 33 A - 0.014 0.018

Semiconductor Group 2 30/Jan/1998

 BUZ 102 SL
SPP47N05L

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance gfs S
V DS≥ 2 * ID * RDS(on)max, ID = 33 A 10 - -
Input capacitance Ciss pF
V GS = 0 V, V DS = 25 V, f = 1 MHz - 1380 1730
Output capacitance Coss
V GS = 0 V, V DS = 25 V, f = 1 MHz - 410 515
Reverse transfer capacitance Crss
V GS = 0 V, V DS = 25 V, f = 1 MHz - 230 290
Turn-on delay time td(on) ns
V DD = 30 V, VGS = 4.5 V, ID = 47 A
RG = 3.6 Ω - 15 25
Rise time tr
V DD = 30 V, VGS = 4.5 V, ID = 47 A
RG = 3.6 Ω - 30 45
Turn-off delay time td(off)
V DD = 30 V, VGS = 4.5 V, ID = 47 A
RG = 3.6 Ω - 30 45
Fall time tf
V DD = 30 V, VGS = 4.5 V, ID = 47 A
RG = 3.6 Ω - 20 30
Gate charge at threshold Qg(th) nC
V DD = 40 V, ID = 0.1 A, V GS =0 to 1 V - 2 3
Gate charge at 5.0 V Qg(5)
V DD = 40 V, ID = 47 A, VGS =0 to 5 V - 35 55
Gate charge total Qg(total)
V DD = 40 V, ID = 47 A, VGS =0 to 10 V - 60 90
Gate plateau voltage V (plateau) V
V DD = 40 V, ID = 47 A - 4.1 -

Semiconductor Group 3 30/Jan/1998

 BUZ 102 SL
SPP47N05L

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TC = 25 °C - - 47
Inverse diode direct current,pulsed ISM
TC = 25 °C - - 188
Inverse diode forward voltage V SD V
V GS = 0 V, IF = 94 A - 1.1 1.7
Reverse recovery time trr ns
V R = 30 V, IF=lS, diF/dt = 100 A/µs - 75 115
Reverse recovery charge Qrr µC
V R = 30 V, IF=lS, diF/dt = 100 A/µs - 0.15 0.25

Semiconductor Group 4 30/Jan/1998

 BUZ 102 SL
SPP47N05L

Power dissipation Drain current

Ptot = ƒ(TC) ID = ƒ(TC)
parameter: VGS ≥ 4 V

130 50

W
A
110
Ptot ID 40
100

90 35

80 30
70
25
60

50 20

40 15

30
10
20
5
10
0 0
0 20 40 60 80 100 120 140 °C 180 0 20 40 60 80 100 120 140 °C 180
TC TC

Safe operating area Transient thermal impedance

ID = ƒ(VDS) Zth JC = ƒ(tp)
parameter: D = 0, TC = 25°C parameter: D = tp / T

10 3 10 1

K/W

A 10 0
t = 21.0µs
ID p ZthJC
D
/I
DS

10 2 10 -1
V
=
n)
(o
DS

100 µs
R

10 -2
D = 0.50
0.20
10 1 10 -3 0.10
1 ms
0.05
10 ms single pulse 0.02
10 -4 0.01
DC

10 0 10 -5
0 1 2 -7 -6 -5 -4 -3 -2 -1 0
10 10 V 10 10 10 10 10 10 10 10 s 10
VDS tp

Semiconductor Group 5 30/Jan/1998

 BUZ 102 SL
SPP47N05L

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs , Tj = 25 °C parameter: tp = 80 µs, Tj = 25 °C

110 0.09
Ptot = 120W
a b c d e
A l kj i h g Ω
VGS [V]
90
ID a 2.5 RDS (on)0.07
f
b 3.0
80
c 3.5
0.06
70 d 4.0
e e 4.5

60 f 5.0 0.05
g 5.5
50 h 6.0 0.04
d
i 6.5
40 j 7.0
0.03
k 8.0
30 c f
l 10.0
0.02 g
hi
20 j
k
VGS [V] =
b 0.01
10 a b c d e f g h i j k
2.5
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0
0 a 0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0 10 20 30 40 50 60 70 80 A 100
VDS ID

Typ. transfer characteristics ID = f (V GS)

parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max

100

I 80
D

70

60

50

40

30

20

10

0
0 1 2 3 4 5 6 7 8 V 10
VGS

Semiconductor Group 6 30/Jan/1998

 BUZ 102 SL
SPP47N05L

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) V GS(th)= f (Tj)
parameter: ID = 33 A, VGS = 4.5 V parameter:VGS=VDS,ID = 90µA

0.09 3.0
V
Ω
2.6
RDS (on)0.07 VGS(th) 2.4
2.2
0.06 2.0
1.8
0.05
1.6

0.04 98% 1.4

1.2
typ
0.03 1.0
max
0.8
0.02
0.6
typ
0.4
0.01
0.2
0.00 0.0 min

-60 -20 20 60 100 °C 180 -60 -20 20 60 100 140 V 200

Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS = 0V, f = 1MHz parameter: Tj , tp = 80 µs

10 4 10 3

A
C IF
pF

10 2

Ciss
10 3

10 1
C Tj = 25 °C typ
oss
Tj = 175 °C typ

Crss Tj = 25 °C (98%)
Tj = 175 °C (98%)

10 2 10 0
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Semiconductor Group 7 30/Jan/1998

 BUZ 102 SL
SPP47N05L

Avalanche energy EAS = ƒ(Tj) Typ. gate charge

parameter: ID = 47 A, VDD = 25 V VGS = ƒ(QGate)
RGS = 25 Ω, L = 222 µH parameter: ID puls = 47 A

260 16

mJ
V
220
EAS VGS
200
12
180

160 10

140
8
120 0,2 VDS max 0,8 VDS max

100 6
80
4
60

40
2
20
0 0
20 40 60 80 100 120 140 °C 180 0 10 20 30 40 50 60 70 nC 90
Tj Q Gate

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

65

V(BR)DSS
61

59

57

55

53

51

49
-60 -20 20 60 100 °C 180
Tj

Semiconductor Group 8 30/Jan/1998