AON7408

30V N-Channel MOSFET

General Description Features

The AON7408 uses advanced trench technology and VDS (V) = 30V
design to provide excellent RDS(ON) with low gate ID = 23A (VGS = 10V)
charge. This device is suitable for use in general RDS(ON) < 20mΩ (VGS = 10V)
purpose applications. RDS(ON) < 32mΩ (VGS = 4.5V)

100% UIS Tested!

DFN 3x3 EP D
Top View Bottom View
Top View

1 8

2 7

3 6

4 5
G

Pin 1 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 23
B
ID
Current TC=100°C 15
C
Pulsed Drain Current IDM 64 A
Continuous Drain TA=25°C 10
IDSM
Current A TA=70°C 8
TC=25°C 16.7
B
PD
Power Dissipation TC=100°C 7
W
TA=25°C 3.1
PDSM
Power Dissipation A TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 25 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 62 75 °C/W
Maximum Junction-to-Case B Steady-State RθJC 6.2 7.5 °C/W

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This datasheet has been downloaded from http://www.digchip.com at this page

AON7408

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS , ID=250µA 1.5 2.1 2.6 V
ID(ON) On state drain current VGS=10V, VDS=5V 64 A
VGS=10V, ID=10A 15.3 20
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 23.3 30 mΩ
VGS=4.5V, ID=5A 22.7 32
gFS Forward Transconductance VDS=5V, ID=10A 17 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 3.8 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 373 448 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 67 pF
Crss Reverse Transfer Capacitance 41 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.2 1.8 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 7.1 8.6 nC
Qgs Gate Source Charge VGS=4.5V, VDS=15V, ID=10A 1.2 nC
Qgd Gate Drain Charge 1.6 nC
tD(on) Turn-On DelayTime 4.3 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.5Ω, 2.8 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 15.8 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs 10.5 12.6 ns
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 4.5 nC
A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
Rev4: Apr-2011

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AON7408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 15
10V 6V VDS=5V
50
12

40
4.5V 9
ID (A)

ID(A)
30
6
20 125°C
VGS=3.5V

10 3
25°C

0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
373 448
40 67
1.8
41
VGS=10V
1.2 1.8
Normalized On-Resistance

35 1.6

30
VGS=4.5V 1.4 7.1 8.6
Ω)
RDS(ON) (mΩ

3.5 VGS=4.5V
25 1.2 1.2
1.6
20 1
VGS=10V
15 0.8

10 0.6
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

60 1.0E+01

ID=10A
1.0E+00
50

1.0E-01
Ω)
RDS(ON) (mΩ

40 125°C
IS (A)

1.0E-02
125°C
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
25°CAS CRITICAL
1.0E-03
20
1.0E-04
25°C
10
1.0E-05
2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AON7408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 600

VDS=15V
ID=10A 500
8
Ciss

Capacitance (pF)
400
VGS (Volts)

6
300
4
200 Coss

2
100

0 Crss
0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

373 448
67
100 1000 41
1.2 1.8
10µs TJ(Max)=150°C
10 TA=25°C
100µs 100 7.1 8.6
Power (W)

DC
ID (Amps)

3.5
RDS(ON) 1ms
1 limited 10ms
1.2
1.6
10
0.1
TJ(Max)=150°C
TA=25°C
0.01 1
0.1 1 10 100 0.0001 0.01 1 100
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note H) Ambient (Note H)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJA=75°C/W
1

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
COMPONENTS PD NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com