MJD31 (NPN), MJD32 (PNP)

Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching www.onsemi.com
applications.

Features SILICON
• Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS
• Straight Lead Version in Plastic Sleeves (“1” Suffix)
3 AMPERES
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
40 AND 100 VOLTS
• Electrically Similar to Popular TIP31 and TIP32 Series
• Epoxy Meets UL 94, V−0 @ 0.125 in
15 WATTS
• NJV Prefix for Automotive and Other Applications Requiring COMPLEMENTARY
Unique Site and Control Change Requirements; AEC−Q101
COLLECTOR COLLECTOR
Qualified and PPAP Capable
2,4 2,4
• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS 1 1
BASE BASE
Rating Symbol Max Unit
Collector−Emitter Voltage VCEO Vdc 3 3
MJD31, MJD32 40 EMITTER EMITTER
MJD31C, MJD32C 100
Collector−Base Voltage VCB Vdc
MJD31, MJD32 40 4
MJD31C, MJD32C 100
4
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC 3.0 Adc 1 2 1
Collector Current − Peak ICM 5.0 Adc 3 2
3
Base Current IB 1.0 Adc DPAK IPAK
Total Power Dissipation PD W CASE 369C CASE 369D
@ TC = 25°C 15 W/°C STYLE 1 STYLE 1
Derate above 25°C 0.12
Total Power Dissipation PD W MARKING DIAGRAMS
@ TA = 25°C 1.56 W/°C
Derate above 25°C 0.012
Operating and Storage Junction Temperature TJ, Tstg −65 to °C AYWW YWW
Range + 150 J3xxG J3xxG
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V DPAK IPAK
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not A = Site Code
be assumed, damage may occur and reliability may be affected. Y = Year
WW = Work Week
THERMAL CHARACTERISTICS xx = 1, 1C, 2, or 2C
G = Pb−Free Package
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 8.3 °C/W
ORDERING INFORMATION
Thermal Resistance, Junction−to−Ambient* RqJA 80 °C/W See detailed ordering and shipping information in the package
Lead Temperature for Soldering Purposes TL 260 °C dimensions section on page 8 of this data sheet.

*These ratings are applicable when surface mounted on the minimum pad sizes recommended.

© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:

September, 2016 − Rev. 16 MJD31/D
 MJD31 (NPN), MJD32 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc

(IC = 30 mAdc, IB = 0)
MJD31, MJD32 40 −
MJD31C, MJD32C 100 −

Collector Cutoff Current ICEO mAdc

(VCE = 40 Vdc, IB = 0)
MJD31, MJD32 − 50
(VCE = 60 Vdc, IB = 0)
MJD31C, MJD32C − 50

Collector Cutoff Current ICES mAdc

(VCE = Rated VCEO, VEB = 0) − 20

Emitter Cutoff Current IEBO mAdc

(VBE = 5 Vdc, IC = 0) − 1

ON CHARACTERISTICS (Note 1)

DC Current Gain hFE

(IC = 1 Adc, VCE = 4 Vdc) 25 −
(IC = 3 Adc, VCE = 4 Vdc) 10 50

Collector−Emitter Saturation Voltage VCE(sat) Vdc

(IC = 3 Adc, IB = 375 mAdc) − 1.2

Base−Emitter On Voltage VBE(on) Vdc

(IC = 3 Adc, VCE = 4 Vdc) − 1.8

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2) fT MHz

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) 3 −

Small−Signal Current Gain hfe

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) 20 −

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. fT = ⎪hfe⎪• ftest.

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 MJD31 (NPN), MJD32 (PNP)

TYPICAL CHARACTERISTICS
VCC
TA TC +30 V
2.5 25
RC
25 ms
PD, POWER DISSIPATION (WATTS)

2 20 +11 V RB
SCOPE
0
1.5 15 TA (SURFACE MOUNT) -9 V 51 D1

TC tr, tf ≤ 10 ns
1 10 -4 V
DUTY CYCLE = 1%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

0.5 5 D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
0 0
25 50 75 100 125 150 REVERSE ALL POLARITIES FOR PNP.
T, TEMPERATURE (°C)

Figure 1. Power Derating Figure 2. Switching Time Test Circuit

2 3
IC/IB = 10 2 IB1 = IB2
1 TJ = 25°C ts′ IC/IB = 10
tr @ VCC = 30 V
ts′ = ts - 1/8 tf
0.7 1 tf @ VCC = 30 V TJ = 25°C
0.5 0.7
t, TIME (s)

t, TIME (s)

0.3 0.5
μ

tr @ VCC = 10 V
μ

0.3 tf @ VCC = 10 V
0.2
0.1
0.07 td @ VBE(off) = 2 V 0.1
0.05 0.07
0.03 0.05
0.02 0.03
0.03 0.05 0.07 0.1 0.3 0.5 0.7 1 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 3. Turn−On Time Figure 4. Turn−Off Time

100
Duty Cycle = 0.5
0.2
0.1
10 0.05
0.02
RqJA (°C/W)

1 0.01

0.1

Single Pulse

0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (sec)
Figure 5. Thermal Response

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 MJD31 (NPN), MJD32 (PNP)

TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)

1000
1000
150°C VCE = 4 V VCE = 2 V
150°C
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

25°C
100 −55°C 100 25°C
−55°C

10 10

1 1
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain at VCE = 4 V Figure 7. DC Current Gain at VCE = 2 V

VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)

0.6 1.2
IC/IB = 10 IC/IB = 10
VCE(sat), COLL−EMITT SATURATION

1.1
0.5
1.0
0.9 −55°C
0.4
VOLTAGE (V)

0.8
150°C 25°C
0.3 0.7
0.6
0.2 150°C
0.5
25°C 0.4
0.1
−55°C 0.3
0 0.2
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 8. Collector−Emitter Saturation Voltage Figure 9. Base−Emitter Saturation Voltage
VBE(on), BASE−EMITTER ON VOLTAGE (V)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

1.2 2
VCE = 5 V TA =
1.1 25°C
1.0 1.6
0.9
−55°C
0.8 1.2
100 mA 500 mA
0.7 25°C
0.6 0.8 IC = 3 A
0.5
150°C 1A
0.4 0.4
0.3
10 mA
0.2 0
0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
Figure 10. Base-Emitter “On” Voltage Figure 11. Collector Saturation Region

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 MJD31 (NPN), MJD32 (PNP)

TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)

1000 100
TA = 25°C

fT, CURRENT−GAIN − BANDWIDTH

VCE = 5 V
TA = 25°C
Cib
C, CAPACITANCE (pF)

PRODUCT (MHz)
100

Cob 10

10

1 1
0.1 1 10 100 0.001 0.01 0.1 1 10
VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (A)
Figure 12. Capacitance Figure 13. Current−Gain−Bandwidth Product
10
IC, COLLECTOR CURRENT (A)

0.1

0.01
1 10 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Safe Operating Area

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 MJD31 (NPN), MJD32 (PNP)

TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)

1000 1000
25°C VCE = 4 V 25°C VCE = 2 V
150°C 150°C

hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

100 100
−55°C −55°C

10 10

1 1
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 15. DC Current Gain at VCE = 4 V Figure 16. DC Current Gain at VCE = 2 V

1 1.4
IC/IB = 10 IC/IB = 10
VCE(sat), COLL−EMITT SATURATION

0.9 150°C
SATURATION VOLTAGE (V) 1.2
0.8
VBE(sat), BASE−EMITTER

−55°C
0.7
1.0
VOLTAGE (V)

0.6
−55°C
0.5 0.8
0.4 25°C
0.6
0.3
0.2 150°C
0.4
0.1 25°C

0 0.2
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 17. Collector−Emitter Saturation Figure 18. Base−Emitter Saturation Voltage
Voltage
VCE, COLLECTOR−EMITTER VOLTAGE (V)

1.2 2
VCE = 5 V TA =
1.1 500 mA 25°C
VBE(on), BASE−EMITTER ON

1.0 1.6

0.9 IC = 3 A
100 mA
VOLTAGE (V)

1.2 1A
0.8 150°C
0.7 25°C
0.6 0.8

0.5
−55°C 0.4
0.4
0.3
10 mA
0.2 0
0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
Figure 19. Base−Emitter “On” Voltage Figure 20. Collector Saturation Region

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 MJD31 (NPN), MJD32 (PNP)

TYPICAL CHARACTERISTICS

1000 100
TA = 25°C VCE = 5 V

fT, CURRENT−GAIN − BANDWIDTH

TA = 25°C
C, CAPACITANCE (pF)

Cib

PRODUCT (MHz)
100
Cob
10

10

1 1
0.1 1 10 100 0.001 0.01 0.1 1 10
VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (A)
Figure 21. Capacitance Figure 22. Current−Gain−Bandwidth Product

10
IC, COLLECTOR CURRENT (A)

1 1 ms
1s

0.1

0.01
1 10 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 23. Safe Operating Area

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 MJD31 (NPN), MJD32 (PNP)

ORDERING INFORMATION
Device Package Type Package Shipping†
MJD31CG DPAK 369C 75 Units / Rail
(Pb−Free)

NJVMJD31CG* DPAK 369C 75 Units / Rail

(Pb−Free)

MJD31C1G IPAK 369D 75 Units / Rail

(Pb−Free)

MJD31CRLG DPAK 369C 1,800 / Tape & Reel

(Pb−Free)

NJVMJD31CRLG* DPAK 369C 1,800 / Tape & Reel

(Pb−Free)

MJD31CT4G DPAK 369C 2,500 / Tape & Reel

(Pb−Free)

NJVMJD31CT4G* DPAK 369C 2,500 / Tape & Reel

(Pb−Free)

MJD31T4G DPAK 369C 2,500 / Tape & Reel

(Pb−Free)

NJVMJD31T4G* DPAK 369C 2,500 / Tape & Reel

(Pb−Free)

MJD32CG DPAK 369C 75 Units / Rail

(Pb−Free)

NJVMJD32CG* DPAK 369C 75 Units / Rail

(Pb−Free)

MJD32CRLG DPAK 369C 1,800 / Tape & Reel

(Pb−Free)

MJD32CT4G DPAK 369C 2,500 / Tape & Reel

(Pb−Free)

NJVMJD32CT4G* DPAK 369C 2,500 / Tape & Reel

(Pb−Free)

MJD32RLG DPAK 369C 1,800 / Tape & Reel

(Pb−Free)

MJD32T4G DPAK 369C 2,500 / Tape & Reel

(Pb−Free)

NJVMJD32T4G* DPAK 369C 2,500 / Tape & Reel

(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.

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 MJD31 (NPN), MJD32 (PNP)

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 MENSIONS b3, L3 and Z.
B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D OUTERMOST EXTREMES OF THE PLASTIC BODY.
DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUM
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.

L4 INCHES MILLIMETERS
NOTE 7
DIM MIN MAX MIN MAX
b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38
e SIDE VIEW A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
0.005 (0.13) M C b2 0.028 0.045 0.72 1.14
TOP VIEW b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
H Z Z D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
GAUGE SEATING
L2 PLANE C PLANE
H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L BOTTOM VIEW L3 0.035 0.050 0.89 1.27
A1 L4 −−− 0.040 −−− 1.01
L1 ALTERNATE
Z 0.155 −−− 3.93 −−−
CONSTRUCTIONS
DETAIL A
ROTATED 905 CW STYLE 1:
SOLDERING FOOTPRINT* PIN 1. BASE
2. COLLECTOR
3. EMITTER
6.20 3.00 4. COLLECTOR
0.244 0.118
2.58
0.102

5.80 1.60 6.17

0.228 0.063 0.243

SCALE 3:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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 MJD31 (NPN), MJD32 (PNP)

PACKAGE DIMENSIONS

IPAK
CASE 369D
ISSUE C

B C NOTES:
1. DIMENSIONING AND TOLERANCING PER
V R E ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
Z A 0.235 0.245 5.97 6.35
A B 0.250 0.265 6.35 6.73
S C 0.086 0.094 2.19 2.38
1 2 3
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
−T− F 0.037 0.045 0.94 1.14
SEATING G 0.090 BSC 2.29 BSC
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
J S 0.025 0.040 0.63 1.01
F V 0.035 0.050 0.89 1.27
H
Z 0.155 −−− 3.93 −−−
D 3 PL
STYLE 1:
G 0.13 (0.005) M T PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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