Experiment No: 02

Experiment Name: Creating the Geometric MOS layout (Static & Dynamic) using
Export Microwind2.

Introduction:

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS

FET) is a transistor used for amplifying or switching electronic signals. Although the
MOSFET is a four-terminal device with source (S), gate (G), drain (D), and body (B)
terminals, the body (or substrate) of the MOSFET often is connected to the source
terminal, making it a three-terminal device like other field-effect transistors. Because these
two terminals are normally connected to each other (short-circuited) internally, only three
terminals appear in electrical diagrams. The MOSFET is by far the most common
transistor in both digital and analog circuits, though the bipolar junction transistor was at
one time much more common.

In enhancement mode MOSFETs, a voltage drop across the oxide induces a conducting
channel between the source and drain contacts via the field effect. The term "enhancement
mode" refers to the increase of conductivity with increase in oxide field that adds carriers
to the channel, also referred to as the inversion layer. The channel can contain electrons
(called an nMOSFET or nMOS), or holes (called a pMOSFET or pMOS), opposite in type
to the substrate, so nMOS is made with a p-type substrate, and pMOS with an n-type
substrate (see article on semiconductor devices). In the less common depletion mode
MOSFET, described further later on, the channel consists of carriers in a surface impurity
layer of opposite type to the substrate, and conductivity is decreased by application of a
field that depletes carriers from this surface layer.

Symbol of the nMOS and pMOS is-

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Apparatus:
 Export Microwind2.

Procedure:
1. Open the Microwind2 software.

2. At first fix the distance between point-to-points in the screen is 5λ.Which is shown in

the left corner of the screen. The minimum width is 2λ.

3. Click the ‘View – Palette of Layer’ or show in the tool bar. Then shown a box right
side of the screen.
4. Now select the Polysilicon palette (Orange color) in the dialog box and draw a layer

where the layer width is minimum 2λ.

5. Then select the n+ diffusion (green color) on the palette box. The two layer is
overlap into one another.
6. The intersection between diffusion and polysilicon creates the channel of the nMOS.
7. Three nodes appear in the cross-section of the n-chennel MOS device: the gate (red),
the left diffusion called source (green) and the right diffusion called drain (green),
over a substrate (gray). A thin oxide called the gate oxide isolates the gate. Various
steps of oxidation have lead to stacked oxides on the top of the gate.
8. Now select the clock in the palette box and fix in the left diffusion and in the top of
the polysilicon. Then a box is shown on the screen. Change the Label name – Vdrain
and Vgate.
9. Then click in ‘Simulate MOS Characteristics of the tool bar and shown a graph
window.
10. In Dynamic MOS click the Visible node on the palette box and fix in the right
diffusion and change the Label Name – Vsource.
11. Then click the ‘Simulate – Run simulate – Voltage vs Time (default)’.

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MOS Layout and Output:

Static MOS characteristic:

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Dynamic MOS Characteristic:

Discussion:

Microwind showed the geometric layout of the MOS characteristics. That is use the color
code to draw the layout. The output is shown by the charging and discharging time of the
MOS.

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