POWER SEMICONDUCTOR DEVICES

Chapter 2. POWER SEMICONDUCTOR DEVICES

2.1. DIODE

Diode is the most fundamental of solid state component. There are many types of diodes
according to the characteristics and applications such as zener diode, light-emitting diode and
others. Diode is a component with two electrodes (anode and cathode) which act as conductor
in one direction. The basic type of diode is a junction pn diode consists of p-type and n-type
materials. Both materials are separated by the junction. When the doping process is carried
out on single crystals of semiconductor material with acceptor atoms on one side and the
donor atoms on the other side, p-n junction will be formed as shown in Figure 2-1.

Fig. 2-1. A diode and its symbol[1].

Under thermal equilibrium, the concentration of hole at p-side is greater than the
concentration of holes at the n-side. On the other hand, the concentration of electron at n-side
are greater than the concentration of electron at p-side. Due to differences in the
concentration of charge carriers (electron and hole), then the hole diffusion from the p-side to
n-side will occur and also the electron diffusion from n-side to p-side will occur. When holes
entering n-side (rich of electrons), the recombination occurs between holes and electrons.
Similarly, when electrons entering p-side (rich of holes), the recombination also occurs. As a
result of this recombination, charge carriers removed in the area around the junction. The
depletion region or space charge region or transition region is so named because it is formed
from a conducting region by removal of all free charge carriers, leaving none to carry the
current. The electric field is shown on the bottom of Fig 2-2, the electrostatic force on
electrons and holes and the direction in which the diffusion tends to move electrons and
holes.
 Fig. 2-2. A diode in thermal equilibrium with zero-bias voltage applied[1].

BIAS VOLTAGE

Bias is the application of a voltage across a p–n junction; forward bias is in the direction of
easy current flow, and reverse bias is in the direction of little or no current flow.

Forward Bias

DC voltage source is connected to the diode, where the positive terminal is connected to p-
type material, while the negative terminal is connected to n-type material. This relationship is
called forward bias as shown in Figure 2-3. Forward bias can produce a large current due to
the negative terminal of the DC voltage source rejected the free electrons in the n-type region
towards the junction.
 Fig. 2-3. A diode under forward bias[1].

Reverse Bias

Connecting the p-type region to the negative terminal of the battery and the n-type region to
the positive terminal corresponds to reverse bias. If a diode is reverse-biased, the voltage at
cathode is comparatively higher than at anode. Therefore, very little current will flow until
the diode breaks down.

Fig. 2-4. A diode under reverse bias[1].

DIODE CURVE

Figure 2-5 shows the current-voltage (I-V) curve of diode under forward and reverse bias. As
the magnitude of forward bias is increased, a number of electrons are flowing from n-type to
p-type region, thus increasing the value of current. When the voltage is increased
above threshold voltage (about 0.7 volts for a silicon diode), there is a sudden rise in the
magnitude of current. As the voltage is greater than the threshold voltage, the bulk resistivity
of p-region and n-region acts as a current resistance. Under reverse bias, only small current
flows (leakage current).
 Fig. 2-5. Current-Voltage (I-V) curve of diode under forward and reverse bias[2].

DIODE APPLICATION

As an electronic device, diode is widely used in various electronic circuits. Rectifier is a

circuit that uses diode. Diode also used in clipper, clamper and voltage multiplier circuits.

Half-wave Rectifier

A half-wave rectifier is a circuit that converts alternating current into direct current in half
wave cycle.

Figure 2-6 shows a half-wave rectifier circuit that consists of transformer, diode (D) and
resistor (R). The half-wave rectifier circuit is changing ac input voltage into a pulsating dc. In
other words, the load voltage is always positive or zero, depending on the half cycle in which
the load voltage V is located.
 Fig. 2-6. Half-wave rectifier[3].

Full-wave Rectifier

Full-wave rectifier can be viewed as a combination of two half-wave rectifiers that work
alternately on each half-wave input. Figure 2-7 shows a full-wave rectifier that consists of
transformer, diode (D1), diode (D2), and resistor R. During the positive half cycle, diode D1
experiences forward bias, whereas diode D2 experiences reverse bias, so that the current
flows through diode D1, R and upper half winding on the transformer. During the negative
half cycle, diode D2 experiences forward biased, while diode D1 experiences reverse bias, so
the current flows through diode D2, R and lower half winding of the transformer.

Fig. 2-7. Full-wave rectifier[3].

2.2. THYRISTOR

Thyristor is a very important power semiconductor component and used extensively in

power electronics circuit. Thyristor is a forth layer semiconductor device which including
SCR (Silicon Controlled Rectifier), DIAC, TRIAC and so on.

2.2.1. SCR (Silicon Controlled Rectifier)

SCR is a four-layer semiconductor device, i.e. P-N-P-N layers as shown in Fig 2.8. Three
terminals are there, the first terminal is connected to P layer called Anode, the second
terminal is connected to N layer called Cathode, and the thid terminal is connected to P layer
called Gate. The SCR is also a rectifier like a diode with three working modes, i.e. reverse
blocking mode, forward blocking mode and forward conduction mode.
 Fig. 2.8. SCR (Silicon Controlled Rectifier)[4].

Reverse Blocking Mode

In this mode, the reverse bias is provided by connecting Anode to negative supply terminal
and Cathode to positive supply terminal. It makes junction J1 and J3 under reverse bias
condition, while J2 under forward bias condition. So the I-V characteristic of reverse
blocking mode is shown as reverse part in Fig 2.9. Increasing the voltage will produce small
current but after the reverse voltage is greater than breakdown voltage (VBR), the current will
damage the device.

Fig. 2-9. I-V characteristic of SCR[5].

Forward Blocking Mode

In this mode, the forward bias is provided by connecting y connecting Anode to positive
supply terminal and Cathode to negative supply terminal. It makes junction J1 and J3 under
forward bias condition, while J2 under reverse bias condition. So the I-V characteristic of this
mode is shown as forward blocking part in Fig 2.9. Increasing the voltage will produce small
current.

Forward Conduction Mode

In this mode, the forward bias is provided by the same way as forward blocking mode but the
Gate is connected to positive terminal to make junction J2 under forward bias condition. So
the I-V characteristic of this mode is shown as forward conduction part in Fig 2.9. A small
increasing voltage will produce major rising current.

2.2.2. TRIAC

TRIAC is a three-electrode semiconductor device that will conduct in either direction when
triggered by a positive or negative signal at the gate electrode. This component behaves like
two SCRs that connected opposite to each other. Symbols of TRIAC is shown in Figure 2-10.
There are three terminals on TRIAC symbol. These are main terminal 1 (MT1), main
terminal 2 (MT2) and Gate (G).

Fig. 2-10. TRIAC symbol[6].

Since TRIAC conducts in both half cycle direction of the AC signal, the current-voltage
characteristic of TRIAC is in accordance with Figure 2.11. Quadrant I (upper right side) is an
area of positive voltage and current. Here, MT2 is positive with respect to MT1, so current
flows from MT2 to MT1. Quadrant III (lower left side) is an area of negative voltage and
current. Here, MT2 is negative with respect to MT1, so current flows from MT1 to MT2.

Fig. 2-11. I-V characteristic of TRIAC[7].

An AC light dimmer is an example of TRIAC application as shown in Fig 2-12. The TRIAC
is used to conduct at certain phase of sinusoidal wave of the grid.
 Fig. 2-12. An application of TRIAC as a light dimmer[6].

2.3. DIAC

DIAC is a full wave, bidirectional semiconductor switch that can be switch off or turn on
both side, forward and reverse. The DIAC name is derived from Diode Alternating Current. It
consists of two main terminal, i.e., Main Terminal 1 (MT1) and Main Terminal 2 (MT2).
Figure 2-13 shows the symbol of DIAC.

Fig. 2-13. DIAC symbol.

When DIAC is connected to AC supply, a small leakage current flows in the order of micro
Ampere. When voltage exceeds Break Over Voltage (VBO), the DIAC enters a region of
negative dynamic resistance, leading to a decrease in the voltage drop across the device. The
DIAC will remain on as long as the current is greater than holding current, IH. When current
is less than IH, the DIAC becomes off. The I-V characteristic of DIAC is shown in Fig. 2-14.

Fig. 2-14. I-V characteristic of DIAC[8].

2.3. UNIJUNCTION TRANSISTOR (UJT)

The Unijunction Transistor (UJT) is a three-lead electronic semiconductor device with only
one junction that acts exclusively as an electrically controlled switch.
 Fig. 2-15. Unijunction Transistor[9].

Original UJT is a simple device that is essentially a bar of n-type semiconductor material into
which p-type material has been diffused somewhere along its length. Meanwhile the
complementary unijunction transistor, or CUJT, that is a bar of p-type semiconductor
material into which n-type material has been diffused somewhere along its length.

Fig. 2-16. UJT and CUJT Symbol [9].

The two terminals applied on the small bar are called Base 2 (B2) and Base 1 (B1) while the
aluminum electrode is called Emitter (E). In the working out of the device, Base 2 and the
Emitter are biased positively against the Base 1.

Fig. 2-17. UJT Device

The equivalent circuit of a unijunction transistor is represented from the dashed side of Fig.
2-18 where the silicon small bar, of interbasic resistance RBB, is represented by two
resistances RB2 between B2 and emitter junction, and RB1 between emitter junction and B1.
The Diode D represents the junction between aluminum contact and N zone.
 Fig. 2-17. UJT Equivalent

The resistance RB1 is indicated as a variable resistance because its value depends on the
positive bias between E and B1 according to the value of VEB1. The resistance RB1 reduces
from some KiloOhm to some Ohm.

With the bias Emitter – Base 1 null, the RB1 acquires the maximum value and in this
condition the resistance RBB=RB2 + RB1 is called Interbase Resistance. With IE = 0, the
voltage drop to the RB1 terminal is

And the relationship

Is called Intrinsic Stand-Off Ratio.

The intrinsic ratio is a feature that is typical of the device and its typical value is about 0.6.
When the voltage VEB1 applied between the Emitter and the Base 1 gets over the VRB1 and the
threshold of the Diode D, starts circulating the current IE that brings to a RB1 decrease. This
voltage is called Peak Voltage V

The function feature of a UJT is practically the one of emitter VE=f(IE) with VB2B1 = constant
is reported in Fig. 2-18.
 Fig. 2-18. I-V Characteristic of UJT

The AB scretch is called Cut-Off Zone because the firing voltage isn’t reached yet. When this
one is reached, the device starts and presents the BC strech with negative resistance. The
voltage on Emitter decreases to the value of VV called Valley Voltage to the which Valley
Current IV corresponds. In the CD scretch, the device behaves like a normal diode.

With VE lower than firing voltage VP, the ammeter IE marks current 0, while the ammeter IB2
marks a current that is

As shown in Fig. 2-19, the Diode D1 makes rectifier of the voltage supplied from the
generator so that to the terminals of R2 represents a pulsating voltage of max value equal to
10 × 1.41 = 14.5 V that biases the Emitter E. Since VB2B1 is 12 V, surely in Emitter, the
voltage VP is reached. The Emitter current IE circulates in R1 too, so that to the terminals of
this resistance is present a voltage proportional to the same IE. This tension is sent to the X
axis and since it is positive, it determines the spot shift on the screen towards right. The
voltage VE sent to the Y axis is, on the contrary, negative so that the spot along the Y axis
moves toward the bottom.
 Fig. 2-19. UJT application
REFERENCES

1. P-N Junction, https://en.wikipedia.org/wiki/P-n_junction

2. Diode, https://en.wikipedia.org/wiki/Diode

3. Rectifier, https://en.wikipedia.org/wiki/Rectifier

4. Silicon Controlled Recitifier, https://en.wikipedia.org/wiki/Silicon_controlled_rectifier

5. Thyristor, https://en.wikipedia.org/wiki/Thyristor

6. TRIAC, https://en.wikipedia.org/wiki/TRIAC
7. V-I Characteristics of TRIAC, http://electronicspost.com/sketch-the-v-i-characteristics-of-
a-triac-describe-some-of-its-important-applications/
8. DIAC, https://en.wikipedia.org/wiki/DIAC
9. UJT, https://en.wikipedia.org/wiki/Unijunction_transistor