Leading Chip and Packaging Technology

for Maximum Energy Efficiency

Silicon Carbide
Power Modules MiniSKiiP

10kW up to 350kW SEMITOP

SEMITOP E1/E2
SEMITRANS
SEMIPACK 2
SKiM 93
 Silicon Carbide Power Modules
Various connection technologies, wide output power range and
maximum efficiency are the key features combined today in SEMIKRON
silicon carbide power modules. Both, hybrid and full SiC modules, are
available in five different packages in 1200V and 1700V, optimised for
low inductance and utilizing the unique features of each package.

Benefits
SEMIKRON hybrid silicon carbide power modules are an un-
complicated means of achieving reduced power losses and
increased switching frequencies and combine the latest IGBT
technology with SiC Schottky diodes. For efficiencies higher
than 99%, a minimum of power losses and maximum output
power and power density, full silicon carbide modules have
to be used with SiC MOSFET switches.
Thanks to the MOSFET’s body diode, an external anti-parallel
diode is never required, but can be beneficial in boosting the
efficiency even further. SEMIKRON supplies power modules
with silicon carbide chips from leading suppliers that are tested
for compliance with the well-known SEMIKRON quality and
reliability standards.
Applications
Silicon carbide power modules are the perfect technology for
creating system benefits, both technically and commercially.
With the increase in switching frequency, far fewer filter com-
ponents such as chokes in booster applications or the load-side
filters in power supplies, UPS or solar inverters are needed.
Power losses are also reduced, resulting in savings when it co-
mes to system or component cooling, lower fan power, smaller
heatsinks or the move from a forced cooled application to a
convection cooled design. Finally, a maximum of overall system
efficiency is achieved, a key benefit when it comes to meeting
the demands of state-of-the-art power
conversion systems.
Product range
Our products cover a power range from 10kW to 350kW in 1200V
and come in seven different packages. MiniSKiiP and SEMITOP
represent the low power range of up to 25kW, both without
a baseplate. The MiniSKiiP comes with tried and tested SPRiNG
Technology as a full SiC 6-pack, with or without SiC Schottky
free-wheeling diodes. The first and second generation SEMITOP
modules help achieve maximum flexibility in combination with
the standard industry package SEMITOP E1/E2.
The medium and high power range is covered by SEMITRANS 3,
SKiM63/93 and SEMiX 3 Press-Fit, available in hybrid and full SiC
topologies for up to 600A rated chip current.

MiniSKiiP SEMITOP SEMITOP E1/E2 SEMIPACK 2 SEMITRANS SKiM 93 SEMiX 3p

10kW 350kW

Key features

-- Higher switching frequencies allow for optimized -- Fully

-- Latest SiCassembled and tested
chips from leading system
suppliers
and lower-cost filter components -- Compact
-- Various andand
packages lowconnection
inductive DC link
technologies
-- Reduced power losses boost efficiency withassembly
optimisedsupported
chipsets for your application
and lower system costs and size thanks to the -- Highest
-- Standard environmental
industry packages protection
more compact cooling devices

SEMIKRON
Leading Chip and Packaging Technology
for Maximum Energy Efficiency

Hybrid SiC modules: 50% less power Switching losses

loss and easy implementation 100%

-30% -50%

Hybrid Silicon Carbide Power Modules combine IGBT switches 80%

with the benefits of Silicon Carbide Schottky free-wheeliing

diodes: Virtually no diode switching losses and drastically 60%

reduced IGBT turn-on losses. In this combination, the module

switching losses are reduced by 30%. Replacing the standard 40%

IGBT with a high-speed device would also result in lower IGBT

turn-off losses. Switching losses are reduced by as much as 20%

50%. Hybrid SiC power modules are the right choice for medium
0%
and high-power applications: easy implementation, no driver
Standard Silicon Hybrid Silicon Carbide Hybrid Silicon Carbide
change, and limited SiC chip area usage. Standard IGBT Fast IGBT

Full SiC modules 25

20A Full SiC module vs. 35A Silicon module

Full Silicon Carbide power modules use SiC MOSFETs as the 20

Output power in kW

switching device and can be built with or without SiC free-

15
wheeling diode. SiC MOSFETs boast a minimum of power losses,
thus delivering a maximum of efficiency and power density. 10

The use of SiC Schottky freewheeling diodes can help improve

5
both values. The result is a potential increase in switching +130% +90%
@40kHz @40kHz
frequency and efficiency at the same time. Alternatively, 0
0 10 20 30 40 50 60
power density can be drastically increased.
Switching frequency in kHz
Vdc=800V, Vout=400V, Tj,op=150°C

Full SiC without SiCSchottky FWD

Full SiC with SiCSchottky FWD
Silicon

Silicon Carbide chips from leading suppliers combined

with SEMIKRON packaging technology
- Soldered or sintered chip assembly for high temperature - Wide power range in multiple packages
operation and maximum reliability - Modules with and without baseplate
- Soldered or solder-free (spring/press-fit) PCB assembly - Customer-specific solutions

Topologies

SEMIKRON
 Note: All information is based on our present knowledge and is to be used for information purposes only. The specifications of our components may not be considered as an assurance of component characteristics.
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90431 Nuremberg, Germany
Tel: +49 911 6559 6663
05/2017

Fax: +49 911 6559 262

sales@semikron.com

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