Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520DX

GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 10 A
ICM Collector current peak value - 25 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W
VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V
ICsat Collector saturation current 6 - A
VF Diode forward voltage IF = 6.0 A - 2.2 V
tf Fall time ICsat = 6.0 A; IB(end) = 1.0 A 0.35 0.5 µs

PINNING - SOT399 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION case
c
1 base

2 collector
b
3 emitter Rbe

case isolated
1 2 3 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 10 A
ICM Collector current peak value - 25 A
IB Base current (DC) - 6 A
IBM Base current peak value - 9 A
-IB(AV) Reverse base current average over any 20 ms period - 150 mA
-IBM Reverse base current peak value 1 - 6 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W
Tstg Storage temperature -55 150 ˚C
Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W
Rth j-a Junction to ambient in free air 35 - K/W

1 Turn-off current.

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520DX

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink

STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A 100 - 300 mA
BVEBO Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Rbe Base-emitter resistance VEB = 7.5 V - 50 - Ω
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 5.0 V
VBEsat Base-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 1.1 V
hFE DC current gain IC = 1.0 A; VCE = 5 V - 13 -
hFE IC = 6 A; VCE = 5 V 5 7 9.5
VF Diode forward voltage IF = 6 A - - 2.2 V

DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF
Switching times (16 kHz line ICsat = 6.0 A; LC = 650 µH; Cfb = 19 nF;
deflection circuit) IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V;
(-dIB/dt = 0.8 A / µs)
ts Turn-off storage time 4.5 5.5 µs
tf Turn-off fall time 0.35 0.5 µs

2 Measured with half sine-wave voltage (curve tracer).

September 1997 2 Rev 2.300

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520DX

ICsat hFE
TRANSISTOR 100
IC DIODE
Tj = 25 C

t 5V Tj = 125 C

IB IBend
10
t

20us 26us 1V

64us

VCE
1
0.1 1 10 100
t IC / A
Fig.1. Switching times waveforms (16 kHz). Fig.4. Typical DC current gain. hFE = f (IC)
parameter VCE

ICsat VBESAT / V
1.2
90 %
Tj = 25 C
1.1
Tj = 125 C
IC
1.0

0.9
10 %
0.8
tf t
ts 0.7 IC/IB=
IB 3
IBend 0.6
4
t 0.5 5
0.4
0.1 1 10
- IBM IC / A
Fig.2. Switching times definitions. Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB

+ 150 v nominal VCESAT / V

1.0
adjust for ICsat IC/IB =
0.9
5
0.8
4
0.7
Lc 3
0.6
0.5
Tj = 25 C
0.4 Tj = 125 C
D.U.T.
IBend LB 0.3
Cfb 0.2
0.1
-VBB Rbe
0
0.1 1 10 100
IC / A
Fig.3. Switching times test circuit. Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520DX

VBESAT / V ts, tf / us
1.2 12
Tj = 25 C 11 ts
1.1 Tj = 125 C 10
9
1.0 8
7
0.9 6
IC= 5 IC =
0.8 8A 4 6A
3
6A
0.7 2 5A
5A
1 tf
4A
0.6 0
0 1 2 3 4 0.1 1 10
IB / A IB / A
Fig.7. Typical base-emitter saturation voltage. Fig.10. Typical collector storage and fall time.
VBEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz

VCESAT / V PD% Normalised Power Derating

10 120
Tj = 25 C
with heatsink compound
110
Tj = 125 C 100
90
80
8A 70
1 60
6A 50
5A 40
30
IC = 4 A 20
10
0.1 0
0.1 1 10 0 20 40 60 80 100 120 140
IB / A Ths / C
Fig.8. Typical collector-emitter saturation voltage. Fig.11. Normalised power dissipation.
VCEsat = f (IB); parameter IC PD% = 100⋅PD/PD 25˚C = f (Ths)

Eoff / uJ Zth / (K/W)

1000 10

IC = 6 A 0.5
1
0.2
0.1
5A 0.05
100 0.1
0.02

PD tp tp
0.01 D=
T

D=0 t
T
10 0.001
0.1 1 10 1E-06 1E-04 1E-02 1E+00
IB / A t/s
Fig.9. Typical turn-off losses. Tj = 85˚C Fig.12. Transient thermal impedance.
Eoff = f (IB); parameter IC; parameter frequency Zth j-hs = f(t); parameter D = tp/T

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520DX

IC / A BU2520AF
100

tp =

ICM = 0.01
30 us

ICDC
10

100 us

Ptot
1

1 ms

0.1

10 ms

DC

0.01
1 10 100 1000 VCE / V

Fig.13. Forward bias safe operating area. Ths = 25 ˚C

ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520DX

MECHANICAL DATA

Dimensions in mm
16.0 max 5.8 max
Net Mass: 5.88 g
3.0
0.7

4.5
3.3
10.0

27 25
max
25.1
25.7
22.5
max

5.1

2.2 max
18.1
4.5
min
1.1
0.4 M
2
0.95 max
5.45 5.45
3.3

Fig.14. SOT399; The seating plane is electrically isolated from all terminals.

Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

September 1997 6 Rev 2.300

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520DX

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1997 7 Rev 2.300