Data Sheet

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by MJ11028/D
SEMICONDUCTOR TECHNICAL DATA

$!!# #!%
!""#!"
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
• High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Diode Protection to Rated IC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Monolithic Construction with Built–In Base–Emitter Shunt Resistor
• Junction Temperature to + 200_C
*Motorola Preferred Device
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJ11028 MJ11030 MJ11032 50 AMPERE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating Symbol MJ11029 MJ11031 MJ11033 Unit COMPLEMENTARY
SILICON
Collector–Emitter Voltage VCEO 60 90 120 Vdc
DARLINGTON
Collector–Base Voltage VCB 60 90 120 Vdc POWER TRANSISTORS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 5 Vdc 60 – 120 VOLTS
300 WATTS
Collector Current — Continuous IC 50 Adc
Peak ICM 100
Base Current — Continuous IB 2 Adc
Total Power Dissipation @ TC = 25_C PD 300 Watts
Derate above 25_C @ TC = 100_C 1.71 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Operating and Storage Junction TJ, Tstg – 55 to + 200 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Maximum Lead Temperature for
v
TL 275 _C
Soldering Purposes for 10 seconds CASE 197A–05
TO–204AE (TO–3)
Thermal Resistance Junction to Case RθJC 0.584 _C
PNP COLLECTOR NPN COLLECTOR

MJ11029 MJ11028
MJ11031 MJ11030
MJ11033 MJ11032
BASE BASE
≈ 3.0 k ≈ 25 ≈ 3.0 k ≈ 25
EMITTER EMITTER
Figure 1. Darlington Circuit Schematic
Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Breakdown Voltage (1) MJ11028, MJ11029 V(BR)CEO 60 — Vdc
(IC = 1 00 mAdc, IB = 0) MJ11030, MJ11031 90 —
MJ11032, MJ11033 120 —
Collector–Emitter Leakage Current ICER mAdc
(VCE = 60 Vdc, RBE = 1 k ohm) MJ11028, MJ11029 — 2
(VCE = 60 Vdc, RBE = 1 k ohm, TC = 150_C) MJ11028, MJ11029 — 10
(VCE = 90 Vdc, RBE = 1 k ohm, TC = 150_C)
MJ11030, MJ11031 — 10
(VCE = 120 Vdc, RBE = 1 k ohm, TC = 150_C) MJ11032, MJ11033 — 10
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO — 5 mAdc
Collector–Emitter Leakage Current (VCE = 50 Vdc, IB = 0) ICEO — 2 mAdc
ON CHARACTERISTICS (1)
DC Current Gain hFE —
(IC = 25 Adc, VCE = 5 Vdc) 1k 18 k
(IC = 50 Adc, VCE = 5 Vdc) 400 —
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 25 Adc, IB = 250 mAdc) — 2.5
(IC = 50 Adc, IB = 500 mAdc) — 3.5
Base–Emitter Saturation Voltage VBE(sat) Vdc
(IC = 25 Adc, IB = 200 mAdc) — 3.0
(IC = 50 Adc, IB = 300 mAdc) — 4.5
v
(1) Pulse Test: Pulse Widthv 300 µs, Duty Cycle 2.0%.
100
50 There are two limitations on the power–handling ability of a
IC, COLLECTOR CURRENT (AMP)
transistor: average junction temperature and second break-

20 down. Safe operating area curves indicate IC – VCE limits of
10 the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
5 BONDING WIRE LIMITED
tion than the curves indicate.
THERMALLY LIMITED @ TC = 25°C
2 The data of Figure 2 is based on T J(pk) = 200_C; TC is
SECOND BREAKDOWN LIMITED
variable depending on conditions. At high case tempera-
1
MJ11028, 29 tures, thermal limitations will reduce the power that can be
0.5 MJ11030, 31 handled to values less than the limitations imposed by se-
MJ11032, 33 cond breakdown.
0.2
0.1
0.2 0.5 1 2 5 10 20 50 100 200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
100 k 5
VCE = 5 V MJ11029, MJ11031, MJ11033 PNP
50 k
TJ = 25°C MJ11028, MJ11030, MJ11032 NPN
20 k 4
hFE, DC CURRENT GAIN
10 k
3 TJ = 25°C
5k VBE(sat)
IC/IB = 100
2k
2
MJ11029, MJ11031, MJ11033 PNP
1k
MJ11028, MJ11030, MJ11032 NPN
500
1
80 µs 80 µs
200
(PULSED) VCE(sat) (PULSED)
100 0
1 2 5 10 20 50 100 1 2 3 5 10 20 50 100
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain Figure 4. “On” Voltage
2 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS
A
N
C NOTES:
–T– SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
PLANE
E Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D 2 PL K
INCHES MILLIMETERS
0.30 (0.012) M T Q M Y M DIM MIN MAX MIN MAX
A 1.530 REF 38.86 REF
U B 0.990 1.050 25.15 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.057 0.063 1.45 1.60
2 E 0.060 0.070 1.53 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N 0.760 0.830 19.31 21.08
Q 0.151 0.165 3.84 4.19
0.25 (0.010) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 197A–05
TO–204AE (TO–3)
ISSUE J
Motorola Bipolar Power Transistor Device Data 3

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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4 Motorola Bipolar Power Transistor Device Data
*MJ11028/D*
◊ MJ11028/D

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJ11028 MJ11030 MJ11032 50 AMPERE

PNP COLLECTOR NPN COLLECTOR

Figure 1. Darlington Circuit Schematic

 Motorola, Inc. 1995 1

transistor: average junction temperature and second break-

Figure 2. DC Safe Operating Area

Figure 3. DC Current Gain Figure 4. “On” Voltage

2 Motorola Bipolar Power Transistor Device Data

Motorola Bipolar Power Transistor Device Data 3

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4 Motorola Bipolar Power Transistor Device Data

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJ11028 MJ11030 MJ11032 50 AMPERE

PNP COLLECTOR NPN COLLECTOR

Figure 1. Darlington Circuit Schematic

 Motorola, Inc. 1995 1

transistor: average junction temperature and second break-

Figure 2. DC Safe Operating Area

Figure 3. DC Current Gain Figure 4. “On” Voltage

2 Motorola Bipolar Power Transistor Device Data

Motorola Bipolar Power Transistor Device Data 3

How to reach us:

4 Motorola Bipolar Power Transistor Device Data

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