Nama : Muhammad Sidik Kalosa

Nim : 141944810527
Fak/jur : Teknik / Elektro

Understanding Transistor
Transistor is a semiconductor device used as an amplifier , cutter ( switching ) , voltage
stabilization , signal modulation or other functions . Transistors can function sort of electric
faucet , which is based on input current ( BJT ) or voltage inputs ( FET ) , enabling highly
accurate electrical drainage from the electrical source circuit .

In general , the transistor has three terminals . Voltage or current that is placed in the terminal set
larger currents through the two other terminals . Transistor is a very important component in the
world of modern electronics . In analog circuits , transistors are used in amplifiers ( boosters ) .
Meling analog circuit .Kupi loudspeakers , the power source is stable , and the radio signal
amplifier . In digital circuits , transistors used as high-speed switch . Some transistors can also be
arranged such that it serves as a logic gate , memory , and other components .

How it works semiconductors

Basically, transistors and vacuum tubes have similar functions; both regulate the amount of
electric current flow. To understand the workings of a semiconductor, for example a glass of
pure water. If a pair of conductors inserted into it, and given the proper DC voltage below the
electrolysis voltage (before the water turns into Hydrogen and Oxygen), there will be no current
flows because the water does not have a charge carrier (charge carriers). Thus, pure water is
considered as an insulator. If a bit of salt incorporated into it, the conduction current will start to
flow, because a number of free charge carrier (mobile carriers, ion) is formed. Raising the salt
concentration will increase conduction, but not much. Salt itself is a non-conductor (insulator),
because the carrier muatanya not free. Pure silicon itself is an insulator, but if a little
contaminants are added, such as Arsenic, with a process called doping, in an amount small
enough so as not to disrupt the layout of crystalline silicon, arsenic will provide free electrons
and the results allow the conduction of electrical current. This is because arsenic has 5 atoms in
the outermost orbit, whereas silicon only 4. Conduction occurs because the free charge carrier
has been added (by excess electrons from Arsenic). In this case, an n-type silicon (n to negative,
because the charge carriers are negatively charged electrons) has been formed. Apart from that,
the silicon can be mixed with boron to make p-type semiconductor. Because Boron only has 3
electrons in the outermost orbit, the new carrier, named "hole" (hole, the positive charge carrier),
will be formed in the silicon crystal layout. In a vacuum tube, the charge carriers (electrons) are
emitted by thermionic emission from a cathode that is heated by a wire filament. Therefore, the
vacuum tube can not make positive charge carriers (holes).
Can be seen that the charge carriers are charged together will repel each other, so that in the
absence of other forces, bearers of this charge will be evenly distributed within the
semiconductor material. However, in a bipolar transistor (or diode junction) where a p-type
semiconductor and an n-type semiconductor are made in one piece of silicon, bearers of this
charge is likely to shift towards the PN junction (the boundary between p-type semiconductor
and type -n), because they are attracted by opposite charges of the opposite.
The increase of the amount of contaminants (doping level) will increase the conductivity of
semiconductor materials, provided that the layout of the silicon crystal is maintained. In a bipolar
transistor, the emitter terminal region has a doping amount larger than the terminal base. The
ratio between the emitter and base doping is one of many factors that determine the nature of the
current gain (current gain) of the transistor. The amount required doping of a semiconductor is
very small, the size of one in a hundred million, and this is the key to the success of the
semiconductor. In a metal, the charge carrier population is very high; one carrier for each atom.
In the metal, to transform metal into an insulator, the charge carriers must be swept by installing
a voltage difference. In metal, this voltage is very high, much higher than that capable of
destroying. However, in a semiconductor is only one charge carrier in a few million atoms. The
amount of voltage required to sweep a large number of charge carriers in a semiconductor can be
achieved easily. In other words, the electricity in the metal is inkompresible (can not be
compressed), like fluid. Whereas in semiconductors, electrical nature such as gas that can be
compressed. Semiconductors by doping can be converted into insulators, whereas metals do not.

How it works transistor

Of the many types of modern transistors, at first there are two basic types of transistors, bipolar
junction transistor (BJT or bipolar transistor) and field-effect transistor (FET), each of which
works differently. Bipolar transistors are so named because the main conduction channel using
two polarity charge carriers: electrons and holes, to carry electrical current. In BJT, the main
electric current must pass through an area / boundary layer called the depletion zone, and the
thickness of this layer can be set at high speed with the aim to regulate the flow of the main
stream. FET (also called a unipolar transistor) using only one type of charge carrier (electron or
hole, depending on the type FET). In the FET, the main electric current flows in a narrow
conduction channel with depletion zone on both sides (as compared with bipolar transistor in
which the base area of the main cutting direction of the electric current). And the thickness of the
border area can be changed with the change of applied voltage, to change the thickness of the
conduction channel. See the article for each type for further explanation.
The types of transistors
Transistor symbol of Various Types
PNP P -channel
NPN N -channel
JFET BJT
In general , the transistor can be differentiated based on many categories

 Semiconductor material : Germanium , Silicon , Gallium Arsenide

 Physical packaging : Through Hole Metal , Plastic Through Hole , Surface Mount , IC ,
And Others
 Type : UJT , BJT , JFET , IGFET ( MOSFET ) , IGBT , HBT , MISFET , VMOSFET ,
MESFET , HEMT , SCR And Development Of Namely transistor IC (Integrated Circuit )
And Others .
 Polarity : NPN OR N - channel , PNP OR P - channel
 Maximum capacity Power : Low Power , Medium Power , High Power
  The maximum working frequency : Low , Medium , High Frequency OR , RF transistors
, Microwave , And Others
 pplication : Amplifiers , Switches , General Purpose , Audio , High Voltage , And Others

BJT
BJT ( Bipolar Junction Transistor ) is one of two types of transistors . How it works BJT can be
thought of as two diodes are the positive or negative terminal huddle , so there are three
terminals . The third terminal is the emitter ( E ) , collector ( C ) , and base ( B ) .
Changes in electrical current in small quantities in the terminal base can produce changes in
electrical current in large numbers at the collector terminal . This principle underlies the use of a
transistor as an electronic amplifier . The ratio between the currents in koletor with the current at
the base is usually denoted by ß or hFE . ß typically ranges from about 100 to transistor -
transisor BJT .

FET
FET is divided into two families: Junction FET (JFET) and Insulated Gate FET (IGFET) or also
known as Metal Oxide Silicon (or Semiconductor) FET (MOSFET). In contrast to the IGFET,
JFET gate terminal forms a diode with the channel (semiconductor material between the Source
and Drain). In its function, it makes the N-channel JFET becomes a solid-state version of
vacuum tubes, which also forms a diode between the grid and cathode. And also, both (JFET and
vacuum tubes) are employed in "depletion mode", both of which have high input impedance, and
both conduct electricity under the control of the input voltage. FET is further subdivided into
types of enhancement mode and depletion mode. Mode indicates the polarity of the gate voltage
in comparison with the current source FET conduct electricity. If we take the N-channel FET as
an example: in the depletion mode, the gate is negative compared to the source, while the
enhancement mode, the gate is positive. For both modes, if the gate voltage is made more
positive, the flow of current between the source and the drain will increase. For the P-channel
FET, polarities all are reversed. Most IGFET is the type of enhancement mode, and nearly all are
the type of depletion mode JFET.

MOSFET
MOSFET , stands Metal Oxyde Semi Conductor or field-effect transistors , is a type of transistor
that works with the modulation of the electric field within the semiconductor material . Between
FET and MOSFET there is no difference , only distinguishing :
The existence of the mambatasi S1O2 layer gate and channel .
Incoming electric current is very small.
IGBT
Transistor IGBT (Insulated-Gate Bipolar Transistor) is a semiconductor device which is
equivalent to a combination of a bipolar transistor (BJT) and a field-effect transistor (MOSFET).
Input of Gate terminal of the IGBT is a MOSFET, being the Source terminal of the MOSFET is
connected to the terminal base of BJT. Thus, the drain current of the MOSFET will go out and be
a base current of the BJT. Because of the size of the incoming prisoners MOSFET, the IGBT
input terminal will only draw a small current from the source. On the other hand, the drain
current as the output current of the MOSFET will be great to make BJT cukuo reached a state of
saturation. With the combined properties of these two elements, the IGBT has a behavior quite
ideal as an electronic switch. On the one hand IGBT not overload the source, on the other hand is
able to generate a large current for the electrical load control.
The main components in the application Electronics power (power electronics) today is the
switch solids (solid-state switches) are realized with semiconductor devices such as bipolar
transistor (BJT), field effect transistors (MOSFETs), and Thyristor. An ideal switch in power
electronics applications will have the following properties: when the state does not deliver
(OFF), the switch has a huge prisoner, approaching infinite value. In other words, the value of
leakage current is very small switch structure
Conversely, when the state deliver (ON), the switch has custody deliver (R_on) is as small as
possible. This will make the value of the voltage drops (voltage drop) also deliver a state as small
as possible, as well as the magnitude of lesapan power (power dissipation) that occurred, and
switching speed (switching speed) is high. The nature of numbers (1) can generally be met by all
types of semiconductor devices mentioned above, because the commercial semiconductor
devices in general has a value of leakage current is very small. For a number of properties (2),
superior BJT MOSFET, because the voltage falls on the collector-emitter terminals, the state
deliver VCE (ON) can be made as small as possible by making transitor BJT are in a state of
saturation (saturation).
Instead, for the performance element number (3), namely switching speed, superior MOSFET
BJT, because as device that works based on the flow of majority carriers (majority carrier), the
MOSFET is not found Aruh storage of minority carriers during the switching process, which
tends to memperlamnat the switching process.
Since the 1980s has emerged as a new type of device switch components for power electronics
applications known as Insulated Gate Bipolar Transistor (IGBT).
According to which the name suggests, this new device is a device that combines the structure
and properties of both types of transistors mentioned above, BJT and MOSFET. In other words,
IGBT have the nature of work that combines the advantages of the properties of both types of
transistors. Terminal gate of the IGBT, as a control terminal also has a structure insulator
(insulator) as the MOSFET.
Thus, the input terminal IGBT has extremely high impedance values, so as not to overload the
circuit controller which generally consists of a logic circuit. It will simplify the design of the
controlling circuit (controller) and driver (driver) of the IGBT.