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TPC8117
Lithium Ion Battery Applications
Notebook PC Applications Unit: mm
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TPC8117
Thermal Characteristics
Marking (Note 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 FR-4
25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8
(Unit: mm) (Unit: mm)
(a) (b)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 500 μH, RG = 25 Ω, IAR = −18 A
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
Note 6: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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Electrical Characteristics (Ta = 25°C)
Rise time tr 0V ⎯ 10 ⎯
ID = −9 A
VGS
−10 V VOUT
Turn-ON time ton ⎯ 20 ⎯
RL = 1.7Ω
Switching time 4.7 Ω ns
Fall time tf ⎯ 300 ⎯
VDD ≈ −15 V
Turn-OFF time toff Duty ≤ 1%, tw = 10 μs ⎯ 800 ⎯
Drain reverse
Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −72 A
current
Forward voltage (diode) VDSF IDR = −18 A, VGS = 0 V ⎯ ⎯ 1.2 V
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ID – VDS ID – VDS
−20 −50
−4 −3 −2.8 −2.6 −3 −2.8
−3.2 Common source
−6 −4 Ta = 25°C
−16 −40
Common source −6 Pulse test
(A)
(A)
−8
Ta = 25°C −10
−10 Pulse test −2.6
ID
ID
−12 −30
Drain current
Drain current
−2.4
−8 −20 −2.4
−4 −10
VGS = −2.2 V VGS = −2.2 V
0 0
0 −0.2 −0.4 −0.6 −0.8 −1 0 −1 −2 −3 −4
VDS = −10 V
Pulse test
Pulse test −0.4
(A)
−60
ID
−0.3
Drain−source voltage
Drain current
−40
−0.2
−20 −4.5
100 −0.1 −9
Ta = −55°C ID = −18 A
25
0 0
0 −1 −2 −3 −4 0 −4 −8 −12 −16 −20
Drain−source ON resistance
100
RDS (ON) (mΩ)
10
Ta = −55°C −4
|Yfs| (S)
100 25
10
VGS = −10 V
1
Common source
VDS = −10 V
Pulse test
0.1 0.1
−0.1 −1 −10 −100 −0.1 −1 −10 −100
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(A)
ID = −4.5, −9, −18 A
Drain-source ON-resistance
8 −5
IDR
−1
RDS (ON) (mΩ)
−10 VGS = 0 V
VGS = −4 V
4
ID = −4.5, −9, −18 A −1
2
VGS = −10 V Common source
Ta = 25°C
Pulse test
0 −0.1
−80 −40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1 1.2
Ciss −1.6
(pF)
−1.2
C
Capacitance
1000 Coss
Crss −0.8
Common source
Common source −0.4 VDS = −10 V
VGS = 0 V ID = −1 mA
f = 1 MHz Pulse test
Ta = 25°C
100 0
−0.1 −1 −10 −100 −80 −40 0 40 80 120 160
PD – Ta Dynamic input/output
characteristics
2 −30 −30
(1) Device mounted on a Common source
glass-epoxy board (a) (Note 2a) ID = −18 A
(W)
(1)
VDS (V)
(V)
VGS
t = 10 s
−20 −20
Drain power dissipation
1.2 VDS
Drain−source voltage
Gate−source voltage
(2) −6
−12
0.8 VDD = −24V
−10 −10
−12
−6
0.4 VGS
0 0 0
0 40 80 120 160 200 0 40 80 120 160 200
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rth − tw
1000
(1)Device mounted on a glass-epoxy board (a)(Note 2a)
Transient thermal impedance (2)Device mounted on a glass-epoxy board (b)(Note 2b) (2)
(1)
100
rth (°C/W)
10
Single pulse
0.1
0.001 0.01 0.1 1 10 100 1000
ID max (Pulse) *
1 ms *
(A)
t = 10 ms *
−10
ID
Drain current
−1
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature. VDSS max
−0.1
−0.1 −1 −10 −100
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