Optical Electronics 光電子學 (Final Exam 期末考)

OPEN BOOK or ONE A4 page free, Calculator Use. Total 100 points.
June/20/2014. (Exam Time 9:00-11:30 AM)

1. AlGaAs LED emitter (20 Points)

An AlGaAs LED emitter for use in a local optical fiber network has the output spectrum shown in
Figure 1. It is designed for oeak emission at 820 nm at 25 ℃.
(a) When is the linewidth △λ between half power points at temperatures -40 ℃, 25℃, and 85℃?
What is the empirical relationship between △λ and T given three temperatures and how does this
compare with △(hv) ≈ 2.5 kBT－3 kBT ?
(b) What is the bandgap of AlGaAs in the LED ?
(c) The bandgap, Eg, of the ternary alloys AlxGa1-xAs follows the empirical expression,
Eg(ev)=1.424 +1.266x + 0.266x2
What is the composition of the AlGaAs in this LED ?
(d) When the foreard current is 40 mA, the voltage across the LED is 1.5 V, and the optical power
that is coupled into a multimode fiber through a lens is 25 µW. What is the overall efficiency ?

Fig. 1 The output spectrum from AlGaAs LED. Values normalized to peal emission at 25℃.

2. A GaAs quantum well (20 Points)

Effective mass of conduction electrons in GaAs is 0.07me where me is the electron mass in vacuum.
Calculate the first three electron energy levels for a quantum well of thickness 8 nm. What is the
hole energy below Ev if the effective mass of the hole is 0.47me ? What is the change in the
emission wavelength with respect to bulk GaAs which has an energy bandgap of 1.42 eV.

3. Open circuit voltage and Shunt resistance (20 Points)

(a) A solar cell under an illumination of 100 Wm-2 has a short circuit current Isc of 50 mA and an
open circuit output voltage Voc, of 0.55V. What are the short circuit current and open circuit
voltages when the light intensity is halved?
(b) Consider the equivalent circuit of a solar cell as shown in Fig.2
 (i) Show that
𝑉 𝑒𝑉 𝑉
I = −𝐼𝑝ℎ + 𝐼𝑑 + = −𝐼𝑝ℎ + 𝐼𝑜 𝑒𝑥𝑝 ( ) − 𝐼𝑜 +
𝑅𝑝 𝑛𝑘𝐵 𝑇 𝑅𝑝
(ii) Plot I vs. V for a polycrystalline Si solar cell that has n = 2 and Io = 3x10-4 mA, for an
illumination such that Iph=5mA. Use Rp =∞, 1000 Ω and then Rp 100 Ω. What is your
conclusion?

Fig.2 The equivalent circuit of a solar cell (a) Ideal pn junction solar cell (b) Parallel and series
resistances.

4. The SQW laser (20 Points)

Consider a SQW (single quantum well) laser which has an ultrathin active InGaAs of bandgap 0.7
eV and thickness 10 nm between two layers of InAlAs which has a bandgap of 1.45 eV. Effective
mass of conduction electrons in InGaAa is about 0.04me and that of the holes in the valence band is
0.44me where me is the mass of the electron in vacuum. Calculate the first and second electron
energy levels above Ec and the first hole energy level below Ev in the QW. What is the lasing
emission wavelength for this SQW laser? What is this wavelength if the transition were to occur in
bulk InGaAs with the same bandgap?

5. What is Raman (20 Points)

(a) Please explain the phenomenon of the Raman effect (raman scattering)?
(b) What is Raman spectroscopy ? Please explain the Energy-level diagram showing the states in Fig.
3 (i),(ii),(iii),(iv) ?

Fig. 3. Energy-level diagram showing the

states involved in Raman signal.

(i) (ii) (iii) (iv)

(c) What is Surface-enhanced Raman spectroscopy (SERS) ?
(d) Please explain the Stokes and anti-Stokes scattering ?