CEA6426

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

60V, 4.6A, RDS(ON) = 90mΩ @VGS = 10V.

RDS(ON) = 110mΩ @VGS = 4.5V.
High dense cell design for extremely low RDS(ON).

Rugged and reliable.

D
Lead free product is acquired.

SOT-89 package.

G
D
S
D
G
SOT-89
S

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

Parameter Symbol Limit Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 4.6 A
Drain Current-Pulsed a
IDM 18.4 A

Maximum Power Dissipation PD 3 W

Operating and Store Temperature Range TJ,Tstg -55 to 150 C

Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient b RθJA 42 C/W

Rev 2. 2011.July
Details are subject to change without notice . http://www.cet-mos.com
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 CEA6426
Electrical Characteristics TA = 25 C unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Units

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 V
Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V 1 µA
Gate Body Leakage Current, Forward IGSSF VGS = 20V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -20V, VDS = 0V -100 nA
On Characteristics
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 1 3 V
Static Drain-Source VGS = 10V, ID = 3A 64 90 mΩ
RDS(on)
On-Resistance VGS = 4.5V, ID = 2.4A 80 110 mΩ
Dynamic Characteristics d

Input Capacitance Ciss 530 pF

VDS = 25V, VGS = 0V,
Output Capacitance Coss f = 1.0 MHz 70 pF
Reverse Transfer Capacitance Crss 50 pF
Switching Characteristics d
Turn-On Delay Time td(on) 9 18 ns
Turn-On Rise Time tr VDD = 30V, ID = 1A, 4 8 ns
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time td(off) 28 56 ns
Turn-Off Fall Time tf 3 6 ns
Total Gate Charge Qg 13 17 nC
VDS = 30V, ID = 4.5A,
Gate-Source Charge Qgs VGS = 10V 1 nC
Gate-Drain Charge Qgd 4 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b IS 3 A
Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 3A 1 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.

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20 8
VGS=10,9,8V
ID, Drain Current (A)

ID, Drain Current (A)

15 6

10 4

25 C
TJ=125 C
5 VGS=3V 2
-55 C

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

900 2.2
ID=3A
RDS(ON), On-Resistance(Ohms)

VGS=10V
750 1.9
C, Capacitance (pF)

RDS(ON), Normalized

600 Ciss 1.6

450 1.3

300 1.0

Coss
150 0.7
Crss
0 0.4
0 5 10 15 20 25 -100 -50 0 50 100 150 200

VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation

with Temperature
1.3
VDS=VGS VGS=0V
Gate-Source Threshold Voltage

ID=250µA
IS, Source-drain current (A)

1.2
1
1.1 10
VTH, Normalized

1.0

0.9
0
10
0.8

0.7

-1
0.6 10
-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4

TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage

with Temperature Variation with Source Current

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2
10 V =30V 10
VGS, Gate to Source Voltage (V)

DS
ID=4.5A RDS(ON)Limit
8

ID, Drain Current (A)

1
10 1ms
10m
6
0 1s
10
4 DC

-1
10
2 TA=25 C
TJ=150 C
Single Pulse
0 -2
10 -2 -1 0 1 2
0 3 6 9 12 15 10 10 10 10 10

Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge Figure 8. Maximum Safe

Operating Area

VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 9. Switching Test Circuit Figure 10. Switching Waveforms

0
10
Transient Thermal Impedance

D=0.5
r(t),Normalized Effective

0.2
-1
10 0.1

0.05

PDM
0.02
-2 t1
10 0.01 t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet
Single Pulse 3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
-3
10
-4 -3 -2 -1 0 1 2
10 10 10 10 10 10 10

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance Curve