FORMAT: QP09 KCE/DEPT.

OF EEE

DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING

SUBJECT: ELECTRON DEVICES AND CIRCUITS

SEMESTER: III

QUESTION BANK (EC 8351)

(Version : 1)

PREPARED BY
P.Raja Pirian AP/ ECE

EDC 5.1 KCE/EEE/QB/II YR/EDC

FORMAT: QP09 KCE/DEPT. OF EEE

EC8351 ELECTRONIC DEVICES AND CIRCUITS LTPC

3003

UNIT I- PN JUNCTION DEVICES 9

PN junction diode –structure, operation and V-I characteristics, diffusion and transient
capacitance - Rectifiers – Half Wave and Full Wave Rectifier,– Display devices- LED, Laser
diodes- Zener diode characteristics- Zener Reverse characteristics – Zener as regulator

UNIT II- TRANSISTORS 9

BJT, JFET, MOSFET- structure, operation, characteristics and Biasing UJT, Thyristor and IGBT
- Structure and characteristics.

UNIT III- AMPLIFIERS

9
BJT small signal model – Analysis of CE, CB, CC amplifiers- Gain and frequency response –
MOSFET small signal model– Analysis of CS and Source follower – Gain and frequency
response- High frequency analysis.

UNIT IV- MULTISTAGE AMPLIFIERS AND DIFFERENTIAL AMPLIFIER 9

BIMOS cascade amplifier, Differential amplifier – Common mode and Difference mode
analysis – FET input stages – Single tuned amplifiers – Gain and frequency response –
Neutralization methods, power amplifiers –Types (Qualitative analysis).

UNIT V- FEEDBACK AMPLIFIERS AND OSCILLATORS 9

Advantages of negative feedback – voltage / current, series , Shunt feedback –positive

feedback – Condition for oscillations, phase shift – Wien bridge, Hartley, Colpitts and Crystal
oscillators.
TOTAL: 45 PERIODS

STAFF INCHARGE HOD/ECE

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DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING

COURSE PLAN

Sub. Code : EC8351 Branch / Year / Sem: B.E /EEE / II /III

COURSE PLAN
Sub. Name : Electron Devices and Circuits Batch : 2017-2021
Staff Name : Mr.P.Raja Pirian Academic Year : 2018-19 (ODD)

COURSE OBJECTIVE

1. Be familiar with the structure of basic electronic devices.

2. Be exposed to the operation and applications of electronic devices
3. To explain the structure of the basic transistors.
4. To design applications using feedback amplifiers.
5. To expose the various types of oscillators.

TEXT BOOKS

T1. David A. Bell,”Electronic Devices and Circuits”, Prentice Hall of India, 2004
T2. Sedra and smith, “Microelectronic Circuits “Oxford University Press, 2004.

REFERENCE BOOKS

R1. Thomas L.Floyd, “Electronic Devices” conventional current version,Pearson prentice

hall 10th Edition, 2017.
R2. Robert L.Boylestad, “Electronic Devices and Circuit theory”, 2002.
R3. S.Salivahanan “Electronic Devices and Circuits” Tata McGraw Hill Publishing Company
Limited, 1998.
R4. B.L.Theraja & R.S.Sedha “Electronic Devices and Circuits” S.Chand & Companyn Ltd.

WEB RESOURCES
W1. http://www.electronics-tutorials.ws/diode/diode_3.html- Operation and V-I
characteristics (Topic.No:2)
W2. http://freevideolectures.com/Course/2261/Basic-Electronics-and-Lab/9
(Topic No: 8)
W3. http://nptel.ac.in/courses/117103063/17 (Topic No: 12)
W4. http://users.ece.gatech.edu/phasler/.../MOSFET01.ppt- MOSFET small signal model
(Topic.No:22)
W5. http://electronics.howstuffworks.com/amplifier.html- Common mode and Difference
mode analysis (Topic.No:29)
W6. http://www.ee.bgu.ac.il/~paperno/Positive_Feedback_Oscillators- FET input stages
& Positive feedback (Topic.No:30, 39)
W7. http://www.electronics-tutorials.com/oscillators/crystal-oscillators.htm
(Topic.No:45)
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FORMAT: QP09 KCE/DEPT. OF EEE

No. of Cumulative
Topic Books for Teaching
Topic Page No. Hours No. of
No Reference Methodology
Required periods
UNIT I PN JUNCTION DEVICES (9+1)
PN junction diode –
1 R2 7-10 BB
structure
1 1
Operation and V-I
2 W1 Web BB
characteristics
Diffusion and transient
3 R2 50-56 BB 1 2
capacitance
Rectifiers – Half Wave
4 R1 56-64 BB 1 3
Rectifier
Full Wave Rectifier, R1 79-81,
5 Display devices, LED, 148-149 BB 2 5
Laser diodes R2 41-48
6 Zener diode R1 114-122 BB 1 6
Diode characteristics-
7 Zener Reverse R2 38-41 BB 2 8
characteristics
8 Zener as regulator W2 90-92 PPT 1 9

9 Revision 1 10

LEARNING OUTCOME
At the end of unit, students should be able to
 Analyze the concept of PN Junction diode and its structure.
 Describe V-I Characteristics.
 Know about the various types of diodes.

UNIT II TRANSISTORS (9+1)

10 BJT R2 131-156 BB 1 11
11 JFET R2 360-379 BB 1 12
MOSFET ( structure,
W3 Web NPTEL
12 operation & 2 14
T2 236-248 BB
characteristics)
13 Biasing UJT R2 838-846 BB 2 16
14 Thyristor R3 200-210 BB 2 18
19
IGBT (structure &
15 R3 210-217 PPT 1
characteristics)

16 Revision 1 20

LEARNING OUTCOME
At the end of unit, students should be able to
 Outline knowledge on various types of transistors.
 Explain the structure and characteristics of transistors.
 State the working principle of thyristor.
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No. of Cumulative
Topic Books for Teaching
Topic Page No. Hours No. of
No Reference Methodology
Required periods
UNIT III AMPLIFIERS (9+1)

17 BJT small signal model R2 238-240 BB 1 21

18 Analysis of CE amplifiers T2 467-470 BB 1 22

19 Analysis of CB amplifiers T2 475-478 BB 1 23

20 Analysis of CC amplifiers T2 478-483 BB 1 24

Gain and frequency
21 R2 281-282 BB 1 25
response
MOSFET small signal R2 489-494
22 PPT 1 26
model W4 Web
Analysis of CS and Source
23 R2 495-497 BB 1 27
follower
Gain and frequency
24 R2 608-611 BB 1 28
response
25 High frequency analysis R3 264-285 BB 1 29

26 Revision 1 30
LEARNING OUTCOME
At the end of unit, students should be able to
 Acquire knowledge on the various types of amplifiers.
 Understand the various configurations of transistorized amplifiers.
UNIT IV MULTISTAGE AMPLIFIERS AND DIFFERENTIAL AMPLIFIER (9+1)

27 BIMOS cascade amplifier R2 352-366 BB 1 31

28 Differential amplifier R2 392-396 BB 1 32

Common mode and
29 W5 Web BB 1 33
Difference mode analysis
30 FET input stages W6 Web BB 1 34

31 Single tuned amplifiers T3 397-399 BB 1 35

Gain and frequency
32 T3 400-404 BB 1 36
response
33 Neutralization methods R2 404-412 BB 1 37

34 Power amplifiers –Types R2 412-414 PPT 2 39

35 Revision 1 40
LEARNING OUTCOME
At the end of unit, students should be able to
 Analyze & Compare the functioning of gain and frequency response of differential
amplifiers.
 Describe the power amplifiers.

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FORMAT: QP09 KCE/DEPT. OF EEE

UNIT V FEEDBACK AMPLIFIERS AND OSCILLATORS (9+1)

Advantages of negative
36 R1 591-593 BB 1 41
feedback
37 Voltage / Current, series R2 737-741 BB
1 42
38 Shunt feedback R2 741-742 BB

39 Positive feedback W6 Web BB

1 43
40 Condition for oscillations R2 745-746 BB

41 Phase shift R2 746-748 BB 2 45

42 Wien bridge oscillator T1 460-462 PPT 1 46

43 Hartley oscillator T1 457-462 PPT 1 47

44 Colpitts oscillator T1 453-457 PPT 1 48

R2 753-756
45 Crystal oscillator PPT 1 49
W7
46 Revision 1 50

LEARNING OUTCOME
At the end of unit, students should be able to
 Describe the feedback amplifiers.
 Understand the various types of oscillators.

COURSE OUTCOME

At the end of the course, the students will be able to

 Explain the working principle of various types of diodes and its applications.
 Describe the structure and working principle of BJT, UJT, MOSFET and IGBT.
 Analyze the various configurations of transistorized amplifiers such as CB, CC and CE
amplifiers.
 Describe the principle of single tuned amplifiers and differential amplifiers.
 State the use of positive and negative feedback and describe the principle of various
types of oscillators.

CONTENT BEYOND THE SYLLABUS

1. Sensors

INTERNAL ASSESSMENT DETAILS

ASSESSMENT
I II MODEL
NUMBER
Topic Nos. 1-13 14-26 1-46

Date

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 FORMAT: QP09 KCE/DEPT. OF EEE

ASSIGNMENT DETAILS

ASSIGNMENT
I II III
NUMBER
Topic Nos. 1-13 14-26 1-46

Date 21.07.18 18.08.18 22.09.18

ASSIGNMENT-I(30 Marks) ASSIGNMENT-II (30 Marks)

(Before AT-I) (Before AT-II)
Topics for reference
1-13 14-26
Part-A Part-A
1. What is rectifier? and list its types. 1. Which is the most commonly used
2. Distinguish between Zener breakdown transistor configuration? Why?
and Avalanche breakdown. 2. What is thermal runaway?
3. State any four application of LCD. 3. List the advantages of CC configuration.
4. What is pinch-off voltage in FET? 4. What are the types of breakdown in
5. Mention some applications of UJT. transistor?
Part-B 5. Define holding current and latching current.
1. With neat diagram explain the Part-B
construction and working of LED. 1. Explain the construction and working
2. Explain the operation of a Half wave principle of DIAC and TRIAC with
rectifier and derive its various parameters. diagrams.
3. With neat sketch, explain the construction 2. Explain the important characteristics of
and operation of SCR. optocoupler.
3. What are the applications of JFET? Explain
JFET as VVR.
ASSIGNMENT-II PRESENTATION TOPICS (Subject:5-Batch No:5)
1. Wien bridge Oscillator
2. Hartley Oscillator,
3. Colpitts Oscillator
4. Crystal oscillator
5. RC Phase Shift Oscillator

Prepared by verified by

P.Raja Pirian. HOD\ECE

Approved by
PRINCIPAL

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