2SB1260 / 2SB1181 / 2SB1241

Transistors

Power Transistor (−80V, −1A)

2SB1260 / 2SB1181 / 2SB1241

!Features !External dimensions (Units : mm)

1) High breakdown voltage and high
2SB1260 2SB1181
current.
6.5±0.2 2.3+0.2
−0.1
BVCEO= −80V, IC=−1A

1.5±0.3
C0.5
5.1+0.2
−0.1 0.5±0.1
4.5+0.2
0.5±0.1
−0.1
2) Good hFE linearity. 1.6±0.1 1.5 +0.2
−0.1

3) Low VCE(sat).

5.5+0.3
−0.1

9.5±0.5
0.9

1.5
4.0 ±0.3

4) Complements the 2SD1898 /

2.5+0.2
−0.1

2.5
0.75 0.65±0.1
2SD1863 / 2SD1733. (1) (2) (3) 0.9
0.4+0.1
−0.05 0.55±0.1
1.0±0.2

0.4±0.1 0.5±0.1 0.4±0.1 2.3±0.2 2.3±0.2 1.0±0.2

1.5±0.1 1.5±0.1
3.0±0.2
!Structure (1) (2) (3)
Epitaxial planar type (1) Base (1) Base
ROHM : CPT3 (2) Collector
PNP silicon transistor ROHM : MPT3 Abbreviated (2) Collector
EIAJ : SC-62 symbol: BH ∗ (3) Emitter
EIAJ : SC-63 (3) Emitter

2SB1241
6.8±0.2 2.5±0.2
4.4±0.2
0.9
1.0

0.65Max.
14.5±0.5

0.5±0.1

(1) (2) (3)

2.54 2.54
1.05 0.45±0.1

(1) Emitter
ROHM : ATV (2) Collector
(3) Base
* Denotes hFE

!Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO -80 V
Collector-emitter voltage VCEO -80 V
Emitter-base voltage VEBO -5 V
IC -1 A(DC)
Collector current
ICP -2 A(Pulse) *1

0.5
2SB1260 *2
Collector power 2 W
PC *3
dissipation 2SB1241, 2SB1181 1
2SB1181 10 W(Tc=25˚C)
Junction temperature Tj 150 ˚C
Storage temperature Tstg -55~+150 ˚C
*1 Single pulse, Pw=100ms
*2 When mounted on a 40×40×0.7 mm ceramic board.
*3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
 2SB1260 / 2SB1181 / 2SB1241
Transistors

!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO -80 - - V IC=-50µA
Collector-emitter breakdown voltage BVCEO -80 - - V IC=-1mA
Emitter-base breakdown voltage BVEBO -5 - - V IE=-50µA
Collector cutoff current ICBO - - -1 µA VCB=-60V
Emitter cutoff current IEBO - - -1 µA VEB=-4V
Collector-emitter saturation voltage VCE(sat) - - -0.4 V IC/IB=-500mA/-50mA
2SB1260, 2SB1181 82 - 390 -
DC current transfer ratio hFE VCE=-3V, IC=-0.1A
2SB1241 120 - 390 -
2SB1260, 2SB1241 - 100 - MHz VCE=-5V, IE=50mA, f=30MHz
Transition frequency fT
2SB1181 - 100 - MHz VCE=-10V, IE=50mA, f=30MHz
Output capacitance Cob - 25 - pF VCB=-10V, IE=0A, f=1MHz

!Packaging specifications and hFE

Package Taping
Code TL TV2 T100
Basic ordering 2500 2500 1000
Type hFE unit (pieces)
2SB1260 PQR - -
2SB1241 QR - -
2SB1181 PQR - -

hFE values are classified as follows :

Item P Q R
hFE 82~180 120~270 180~390

!Electrical characteristic curves

-1000 Ta=25˚C 1000
Ta=25˚C Ta=25˚C
COLLECTOR CURRENT : IC (mA)

-1.0
VCE=-5V
COLLECTOR CURRENT : IC (mA)

-0.45mA 500
DC CURRENT GAIN : hFE

-100 -0.8 -0.4mA

-0.35mA 200
-0.6 -0.3mA
VCE=-3V
-10 -0.25mA 100

-0.4 -0.2mA -1V

50
-0.15mA
-1 -0.1mA
-0.2
-0.05mA 20
IB=0mA
0 10
-0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1 -2 -5 -10 -20 -50-100 -200-500-1000-2000

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 DC current gain vs.
characteristics characteristics collector current
 2SB1260 / 2SB1181 / 2SB1241
Transistors

1000 1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

Ta=25˚C Ta=25˚C Ta=25˚C

TRANSITION FREQUENCY : fT (MHz)

500 VCE=-5V 500 f=1MHz
-2 IE=0A
200 200
-1
100 100
-0.5
50 50
-0.2
20 20
IC/IB=20
-0.1 10 10 10
-0.05
5 5

-0.02 2 2
-0.01 1 1
-1 -2 -5 -10 -20 -50-100-200-500-1000-2000 1 2 5 10 20 50 100 200 500 1000 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.4 Collector-emitter saturation Fig.5 Gain bandwidth product vs. Fig.6 Collector output capacitance
voltage vs. collector current emitter current vs. collector-base voltage
EMITTER INPUT CAPACITANCE : Cib (pF)

1000 10
Ta=25˚C Ta=25˚C Ta=25˚C
f=1MHz -2
IC Max. (Pulse)
* Single
5
IC Max. (Pulse)
* Single
nonrepetitive

COLLECTOR CURRENT : IC (A)

500 IC=0A nonrepetitive 2
COLLECTOR CURRENT : IC (A)

pulse pulse

PW
DC
-1 IC Max. 1

=1
PW

0m
500m
PW

=1
200

s
=1

00
-0.5 200m
PW

m
0ms

s
=1

100 100m
00
m
DC

50m
s

-0.2
50 20m
-0.1 10m
5m
20 *Printed circuit board:
-0.05 1.7 mm thick with collector
2m 2
10 1m copper plating at least 1 cm .
-0.1 -0.2 -0.5 -1 -2 -5 -10 0.1 0.2 0.5 1 2 5 10 20 50 100200 5001000
-0.5 -1 -2 -5 -10 -20 -50 -100
EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig. 7 Emitter input capacitance Fig. 8 Safe operating area Fig.9 Safe operating area (2SB1241)
vs. emitter-base voltage (2SB1260)

-5
Ta=25˚C

-2
*Single
nonrepetitive
COLLECTOR CURRENT : IC (A)

pulse
-1
PW

-0.5
=1
00m
s

-0.2

-0.1

-0.05

-0.02

-0.01
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.10 Safe operating area

(2SB1181)