Transistor

2SC1383, 2SC1384
Silicon NPN epitaxial planer type

For low-frequency power amplification and driver amplification

Unit: mm
Complementary to 2SA683 and 2SA684
5.9±0.2 4.9±0.2

■ Features

8.6±0.2
● Low collector to emitter saturation voltage VCE(sat).
● Complementary pair with 2SA683 and 2SA684.
0.7±0.1

+0.3
0.7–0.2
■ Absolute Maximum Ratings (Ta=25˚C)
2.54±0.15
Parameter Symbol Ratings Unit

13.5±0.5
Collector to 2SC1383 30
VCBO V
base voltage 2SC1384 60
Collector to 2SC1383 25
VCEO V
emitter voltage 2SC1384 50 0.45–0.1
+0.2 +0.2
0.45–0.1
1.27 1.27
Emitter to base voltage VEBO 5 V
1:Emitter
Peak collector current ICP 1.5 A 2:Collector
1 2 3

3.2
3:Base
Collector current IC 1 A
EIAJ:SC–51
Collector power dissipation PC 1 W TO–92L Package

Junction temperature Tj 150 ˚C

Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 20V, IE = 0 0.1 µA
Collector to base 2SC1383 30
VCBO IC = 10µA, IE = 0 V
voltage 2SC1384 60
Collector to emitter 2SC1383 25
VCEO IC = 2mA, IB = 0 V
voltage 2SC1384 50
Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V
hFE1 *1 VCE = 10V, IC = 500mA*2 85 160 340
Forward current transfer ratio
hFE2 VCE = 5V, IB = 1A*2 50 100
Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA*2 0.2 0.4 V
Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA*2 0.85 1.2 V
Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 MHz
Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11 20 pF
*2 Pulse measurement

*1h Rank classification

FE1

Rank Q R S
hFE1 85 ~ 170 120 ~ 240 170 ~ 340

1
Transistor 2SC1383, 2SC1384

PC — Ta IC — VCE IC — I B
1.2 1.5 1.2
Ta=25˚C VCE=10V
Collector power dissipation PC (W)

Ta=25˚C
1.0 1.25 1.0
IB=10mA

Collector current IC (A)

Collector current IC (A)

9mA
8mA
0.8 1.0 0.8
7mA
6mA
0.6 0.75 5mA 0.6

4mA

0.4 0.5 3mA 0.4

2mA
0.2 0.25 0.2
1mA

0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0 2 4 6 8 10 12
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA)

VCE(sat) — IC VBE(sat) — IC hFE — IC

10 100 600
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 IC/IB=10
Base to emitter saturation voltage VBE(sat) (V)

VCE=10V

Forward current transfer ratio hFE

3 30
500

1 10
Ta=75˚C
400
0.3 25˚C 3
25˚C
Ta=–25˚C
–25˚C
0.1 1 300
75˚C
Ta=75˚C
0.03 0.3
200
25˚C
0.01 0.1
–25˚C
100
0.003 0.03

0.001 0.01 0
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

fT — IE Cob — VCB VCER — RBE

200 50 120
VCB=10V
IE=0 IC=10mA
Collector output capacitance Cob (pF)

Ta=25˚C
Collector to emitter voltage VCER (V)

180 45 f=1MHz Ta=25˚C

Ta=25˚C
Transition frequency fT (MHz)

100
160 40

140 35
80
120 30

100 25 60
2SC1384
80 20
40
60 15
2SC1383
40 10
20
20 5

0 0 0
–1 –3 –10 –30 –100 1 3 10 30 100 0.1 0.3 1 3 10 30 100
Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ)

2
Transistor 2SC1383, 2SC1384

ICEO — Ta Area of safe operation (ASO)

104 10
VCE=10V Single pulse
Ta=25˚C
3
ICP

Collector current IC (A)

103 1
IC
ICEO (Ta=25˚C)

t=10ms
0.3
ICEO (Ta)

t=1s

102 0.1

0.03

2SC1383
2SC1384
10 0.01

0.003

1 0.001
0 20 40 60 80 100 120 140 160 0.1 0.3 1 3 10 30 100
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V)