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Description
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
1. Gate
G 2. Drain (Flange)
3. Source
1
2
3
S
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS –100 — — V ID = –10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — –250 µA VDS = –80 V, VGS = 0
Gate to source cutoff voltage VGS (off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V
Ω
Note 3
Static drain to source on state resistance RDS (on) — 0.12 0.16 ID = –10 A, VGS = –10 V
Ω
Note 3
RDS (on) — 0.16 0.22 ID = –10 A, VGS = –4 V
Note 3
Forward transfer admittance |yfs| 7.5 12 — S ID = –10 A, VDS = –10 V
Input capacitance Ciss — 1800 — pF VDS = –10 V
Output capacitance Coss — 680 — pF VGS = 0
Reverse transfer capacitance Crss — 145 — pF f = 1 MHz
Turn-on delay time td (on) — 15 — ns ID = –10 A
Rise time tr — 115 — ns VGS = –10 V
Turn-off delay time td (off) — 320 — ns RL = 3 Ω
Fall time tf — 170 — ns
Body to drain diode forward voltage VDF — –1.05 — V IF = –20 A, VGS = 0
Body to drain diode reverse recovery time trr — 280 — ns IF = –20 A, VGS = 0
diF/dt = 50 A/µs
Note: 3. Pulse test
Main Characteristics
10 0 µ
µs s
10
–30
ID (A)
PW Op
1
D
–10
= era
80
m
C
10 tio
s
Channel Dissipation
m n(
s
Drain Current
(1 c =
–3
sh
ot 25°
T
Operation in
)
40 –1 this area is
limited by RDS (on)
C
)
–0.3
Ta = 25°C
0 –0.1
0 50 100 150 –1 –3 –10 –30 –100 –300 –1000
ID (A)
–40
–5 V
–30 –12
Drain Current
Drain Current
–4 V
–20 –8
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
Drain to Source Saturation Voltage VDS (on) (V)
–10 5
Pulse Test 3 Pulse Test
–8
1
–6 0.3
VGS = –4 V
0.1 –10 V
–4
–20 A
0.03
–2
–10 A
ID = –5 A 0.01
0 0.005
0 –4 –8 –12 –16 –20 –0.1 –0.3 –1 –3 –10 –30 –100
30 –25°C
0.8 Tc = 25°C
10
0.6 ID = –20 A
3
–5 V, –10 A 75°C
0.4
VGS = –4 V 1
0.2
–20 A 0.3
VDS = –10 V
–10 V –5 V, –10 A Pulse Test
0 0.1
–40 0 40 80 120 160 –0.1 –0.3 –1 –3 –10 –30 –100
3000
3000
Ciss
Capacitance C (pF)
1000
1000
Coss
300
300
100
Crss
100
30
di / dt = 50 A / µs 30 VGS = 0
10
VGS = 0, Ta = 25°C f = 1 MHz
5 10
–0.1 –0.3 –1 –3 –10 –30 –100 0 –10 –20 –30 –40 –50
Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)
VGS (V)
–20 –4
1000
td(off)
Drain to Source Voltage
30 tr
–80 –16 td(on)
ID = –20 A 10
–100 –20 5
0 20 40 60 80 100 –0.1 –0.3 –1 –3 –10 –30 –100
–30
–20
–10 V
–5 V
–10
VGS = 0, 5 V
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.1 θch – c (t) = γ s (t) • θch – c
0.05 θch – c = 1.67°C/W, Tc = 25°C
2 PW
0.0 PDM D=
T
0.03 1 se
0.0 p ul PW
h ot
T
1s
0.01
10 µ 100 µ 1m 10 m 100 m 1 10
Pulse Width PW (S)
Vin
Vin Monitor Vout 10%
Monitor
D.U.T.
90%
RL
90% 90%
Vin VDD
50 Ω = –30 V
–10 V
Vout 10% 10%
td(on) tr td(off) tf
Package Dimensions
JEITA Package Code RENESAS Code Package Name MASS[Typ.]
Unit: mm
SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g
11.5 Max
2.79 ± 0.2
10.16 ± 0.2 4.44 ± 0.2
9.5 +0.1
φ 3.6 –0.08 1.26 ± 0.15
8.0
–0.1
+0.2
6.4
15.0 ± 0.3
1.27
18.5 ± 0.5
2.7 Max
1.5 Max
14.0 ± 0.5
7.8 ± 0.5
0.76 ± 0.1
Ordering Information
Part Name Quantity Shipping Container
2SJ221-E 500 pcs Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.