MUR1220CTR thru MUR1260CTR

MUR1220CTR/MUR1240CTR/MUR1260CTR Pb
Pb Free Plating Product
12.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifiers

Features TO-220AB(TO-220-3L) Unit:inch(mm)

※ Fast switching for high efficiency
.419(10.66) .196(5.00)
※ Low forward voltage drop .387(9.85) .163(4.16)
※ High current capability .139(3.55)
MIN
.054(1.39)

※ Low reverse leakage current .045(1.15)

※ High surge current capability

.269(6.85)
.226(5.75)

.624(15.87)
.548(13.93)
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.

.50(12.7)MIN
.177(4.5)MAX
.038(0.96) .025(0.65)MAX
.019(0.50)

Mechanical Data
※ Case: Heatsink TO-220AB .1(2.54) .1(2.54)

※ Epoxy: UL 94V-0 rate flame retardant

※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
Case Case Case
※ Mounting position: Any Case

※ Weight: 2.0 gram approximately Positive Negative Doubler Series

Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "CT" Suffix "CTR" Suffix "CTD" Suffix "CTS"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
MUR1220CT MUR1240CT MUR1260CT
MUR1220CTR MUR1240CTR MUR1260CTR
PARAMETER SYMBOL UNIT
MUR1220CTD MUR1240CTD MUR1260CTD
MUR1220CTS MUR1240CTS MUR1260CTS
Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V
Maximum RMS Voltage VRMS 140 280 420 V
Maximum DC Blocking Voltage VDC 200 400 600 V
Maximum Average Forward Rectified
Current Tc=100°C IF(AV) 12.0 A
(Total Device 2x6.0A=12.0A)

Peak Forward Surge Current, 8.3ms single Half

sine-wave superimposed on rated load (JEDEC IFSM 100 A
method)

Maximum Instantaneous Forward Voltage

@6.0A VF 0.98 1.3 1.7 V
(Per Diode/Per Leg)

Maximum DC Reverse Current @TJ=25°C 5.0 μA

IR
At Rated DC Blocking Voltage @TJ=125°C 100 μA

Maximum Reverse Recovery Time (Note1) Trr 35 nS

Typical Junction Capacitance (Note 2) CJ 65 pF
Typical Thermal Resistance (Note 3) RθJC 1.5 °C/W

Operating Junction and Storage

TJ,TSTG -55 to +150 °C
Temperature Range

Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.

Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.

Rev.08T Page 1/2

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/

 MUR1220CTR thru MUR1260CTR

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

12 100
Pulse Width 8.3ms

PEAK FORWARD SURGE CURRENT,

Single Half-Sire-Wave
AVERAGE FORWARD RECTIFIED

(JEDEC Method)
80
CURRENT, AMPERES

AMPERES
60

40

20

60 Hz Resistive or
Inductive load
0
0 50 100 150 1 10 100

o NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE, C

FIG.3 - TYPICAL INSTANTANEOUS FIG.4 - TYPICAL REVERSE CHARACTERISTICS

FORWARD CHARACTERISTICS
12 1000
IINSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS REVERSE CURRENT,

MUR1220CTR
o
TJ=125 C
100
MUR1240CTR
MICROAMPERES

MUR1260CTR
AMPERES

10

o
TJ=25 C

o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100

INSTANTANEOUS FORWARD VOLTAGE, PERCENT OF RATED PEAK REVERSE VOLTAGE,%

VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1000 o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
JUNCTION CAPACITANCE, pF

100

10
0.1 1.0 4.0 10 100

REVERSE VOLTAGE, VOLTS

Rev.08T Page 2/2

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/