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G 09/03
SAFEIR Series
40TPS..
PHASE CONTROL SCR
IT(AV) Sinusoidal 35 A
waveform
IRMS 55 A
VRRM/ VDRM Range 800 - 1200 V
ITSM 500 A
VT @ 40 A, TJ = 25°C 1.45 V
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40TPS.. SAFEIR Series
Bulletin I2107 rev. G 09/03
Voltage Ratings
VRRM/ VDRM, max. repetitive VRSM , maximum non repetitive IRRM/ IDRM
Part Number peak and off-state voltage peak reverse voltage 125°C
V V mA
ITSM Max. Peak One Cycle Non-Repetitive 500 A 10ms Sine pulse, rated VRRM applied Initial
Surge Current 600 10ms Sine pulse, no voltage reapplied TJ = TJ max.
I2t Max. I 2t for Fusing 1250 A2s 10ms Sine pulse, rated VRRM applied
1760 10ms Sine pulse, no voltage reapplied
2 2 2
I √t Max. I √t for Fusing 12500 A √s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low Level Value of Threshold 1.02 V TJ = 125°C
Voltage
VT(TO)2 High Level Value of Threshold 1.23
Voltage
Slope Resistance
VTM Max. Peak On-state Voltage 1.85 V @ 110A, TJ = 25°C
dv/dt Max. Rate of Rise 40TPS08 500 V/µs TJ = TJ max., linear to 80% VDRM , Rg-k = open
of Off-state Voltage 40TPS12 1000
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40TPS.. SAFEIR Series
Bulletin I2107 rev. G 09/03
Triggering
Parameters 40TPS.. Units Conditions
PGM Max. peak Gate Power 10 W
PG(AV) Max. average Gate Power 2.5
IGM Max. peak Gate Current 2.5 A
80 TJ = 125°C
40 TJ = 25°C, for 40TPS08A and 40TPS12A
V GD Max. DC Gate Voltage not to trigger 0.25 V TJ = 125°C, V DRM = rated value
IGD Max. DC Gate Current not to trigger 6 mA
Thermal-Mechanical Specifications
Parameters 40TPS.. Units Conditions
TJ Max. Junction Temperature Range - 40 to 125 °C
Tstg Max. Storage Temperature Range - 40 to 125
RthCS Max. Thermal Resistance Case 0.2 Mounting surface, smooth and greased
to Heatsink
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40TPS.. SAFEIR Series
Bulletin I2107 rev. G 09/03
130 130
110 110
Conduction Angle Conduction Period
100 100
30°
60° 30°
90 90° 90 60°
120° 90°
180° 120°
80 80 180°
DC
70 70
0 10 20 30 40 0 10 20 30 40 50 60
60 80
Maximum Avera g e On-state Power Loss (W)
180° DC
70 180°
50 120°
90° 120°
60° 60 90°
40 30° RMS Limit 60°
50 30°
30 40 RMSLimit
30
20 Conduction Angle Conduction Period
20
10 40TPS.. Series 40TPS.. Series
TJ= 125°C 10 TJ = 125°C
0 0
0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60
Avera ge On-sta te Current (A) Avera ge On-sta te Current (A)
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
550 600
At Any Ra ted Load Condition And With Ma ximum Non Rep etitive Surge Current
Peak Half Sine Wave On-state Current (A)
Rated V RRM Ap plied Following Surge. Versus Pulse Train Duration. Control
500 Initia l TJ= 125°C 550 Of Conduction May Not Be Maintained.
@60 Hz 0.0083 s Initial TJ = 125°C
@50 Hz 0.0100 s 500 No Voltage Reap p lied
450 Rated VRRM Reap p lied
450
400
400
350
350
300
40TPS.. Series 300 40TPS.. Series
250 250
1 10 100 0.01 0.1 1
Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Tra in Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Fig. 6 - Maximum Non-Repetitive Surge Current
Current
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40TPS.. SAFEIR Series
Bulletin I2107 rev. G 09/03
100
10 TJ= 25°C
TJ= 125°C
40TPS.. Series
1
0.5 1 1.5 2
Instantaneous On-state Voltag e (V)
Fig. 7 - On-state Voltage Drop Characteristics
100
Rec tangular gate pulse (1) PGM = 100 W, tp = 500 µs
a)Rec ommended load line for (2) PGM = 50 W, tp = 1 ms
rated di/ dt: 20 V, 30 ohms
Instantaneous Gate Voltage (V)
(3) PGM = 20 W, tp = 25 ms
tr = 0.5 µs, tp >= 6 µs
b)Rec ommended load line for (4) PGM = 10 W, tp = 5 ms
<= 30% rated di/ dt: 20 V, 65 ohms
10 tr = 1 µs, tp >= 6 µs
(a)
(b)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
1
(4) (3) (2) (1)
VGD
IGD
40TPS.. Frequenc y Limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100 1000
Instantaneous Gate Current (A)
Fig. 8 - GateCharacteristics
1
Transient Thermal Impeda nc e Z thJC (°C/W)
Single Pulse
40TPS.. Series
0.01
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
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40TPS.. SAFEIR Series
Bulletin I2107 rev. G 09/03
Outline Table
3. 65 ( 0 .14 4)
DIA. 5. 30 ( 0 .20 9)
15 .90 (0 .626 )
3. 55 ( 0 .13 9)
4.70 ( 0.185) 2.5 ( 0.098)
15 .30 (0 .602 )
1.5 ( 0.059)
5. 70 (0 .22 5)
5.30 ( 0.208)
20 .30 (0 .800 )
19 .70 (0 .775 ) 5.50 ( 0.217)
4. 50 (0 .17 7)
1 2 3 ( 2 PLCS.)
14. 80 ( 0.583)
14 .20 (0 .559 ) 4. 30 ( 0 .17 0)
3. 70 ( 0 .14 5)
2. 20 (0 .08 7) 2. 40 (0 .09 5)
1. 40 ( 0 .05 6)
M AX. M AX.
1. 00 ( 0 .03 9)
0.80 ( 0.032)
0. 40 ( 0 .21 3)
10. 94 ( 0.430)
10 .86 ( 0 .427 )
Marking Information
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40TPS.. SAFEIR Series
Bulletin I2107 rev. G 09/03
Device Code
40 T P S 12 2
(A)
1 2 3 4 5 6
1 - Current Rating
2 - Circuit Configuration:
1 (K) (G) 3
T = Thyristor
3 - Package:
P = TO-247
4 - Type of Silicon:
S = Standard Recovery Rectifier
08 = 800V
5 - Voltage code: Code x 100 = VRRM
12 = 1200V
6 - None = Standard Igt selection
A = Low Igt selection 40mA max. for 40TPS08A
and 40TPS12A
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