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I. INTRODUCTION mil thick and 25 mil thick alumina. The surrounding metalization
is 24 mils square. A microstrip line of width w could then be con-
Most thin film fabrication facilities have a via hole process avail-
nected to one side of square. Because the component designer is
able to microwave component designers. In most cases the designer
most likely to use the minimum via hole diameter and metalization
will choose the minimum via hole diameter and spacing allowed
area allowed, the equivalent inductance of this structure can be
by the process. Earlier work [ l ] has focused on analytical models
computed as a function of only line width and frequency. The
for a single via hole as a function of hole diameter and substrate
equivalent inductance is computed at a reference plane defined by
thickness. But the actual via hole configuration used by the de-
the junction of the microstrip line and the square pad around the
signer is often a more complex combination of several via holes
via hole. For lines other than 24 mils wide it is clear that the model
and other microstrip discontinuities. And the significant interac-
includes a step junction, the inductance of the via hole and the
tions between several discontinuities in close proximity cannot be
capacitance of the pad surrounding the via.
accurately described by combining analytical models for isolated
The analysis of this structure was carried out on a full wave field
elements. In this work, an electromagnetic field solver has been
solver [2] for several line widths over the 2 to 20 GHz frequency
used to compute the equivalent inductance of two different via hole
range. The round via hole was approximated by an octagonal hole
topologies as a function of frequency, substrate thickness and a
in the analysis. The results of this analysis for 15 mil thick alu-
microstrip discontinuity variable.
mina, E , = 9.8 are shown in Fig. 2. A similar analysis for 25 mil
thick alumina, E,. = 9.8 was also performed with the results shown
11. SINGLE
VIA HOLES in Fig. 3. These graphs provide a convenient look-up table for the
Fig. 1 is the preferred geometry for a single via hole in alumina designer using single via holes.
at Watkins-Johnson. The 13 mil diameter hole is used in both 15
111. DOUBLEVIA HOLES
Manuscript received August 5, 1991; revised February 4, 1992.
The author is with Watkins-Johnson Company, 3333 Hillview Ave., Double via holes are often used to decrease the parasitic induc-
Stanford Research Park, Palo Alto, CA 94304.1204. tance of the ground connection or to ground a wider microstrip line.
IEEE Log Number 9200862. Fig. 4 is the preferred geometry for double via holes at Watkins-
.I9 w=4
-
W
.27 1 w=4 : F
E. . I 8
w W=8
g .26 r g .I7
a w=8 : w=12
63 .25
20
.16
w=16
n w=12 : .15 w = 20
z .24 f z ~ = 2 4:
w=l6 : .I4 w=28 :
.
.23 : w=20
.13 ~ = 4 0
.22
0 5 10 15 20 25 0 5 10 15 20 25
REF PLANE 1
Fig. 4. Microstrip double via holes and microstrip line of width w. All
dimensions are mils.
-: : 1
z . 1 1 o - - - - = = = t o
Fig. 7. Current density on microstrip double via, alumina substrate, h
15 mil, E, = 9.8, w = 20 mil, freq = 18 GHz.
=
I 6
-10
rr
3 -20
rn
v)
5 -30
z
E 4 0
171.7
i
K
W
v) -50
z
-60
-70
4.0 4.5 5.0 5.5 6.0
1 FREQUENCY (GHz)
Fig. 10. Measured and computed insertion loss for the microstrip inter-
digital filter. The computer analysis includes equivalent double via hole
Fig. 8. Microstrip interdigital filter, alumina substrate, h = 15 mil, E, = inductances from Fig. 5.
9.8. All dimensions are mils.