Junction Field Effect Transistor (JFET)

Basics of Electronic Engineering

A bipolar junction transistor (BJT) is a current
controlled device. i.e. output characteristics of the
device are controlled by base current and not base
Vivek Maik voltage.
(Email) vivek.maik@alliance.edu.in
(Office) 080 30938229
In field effect transistor (FET), the output
(Mobile) 77608 77215 characteristics are controlled by input voltage and
not by input current. Voltage controlled device

College of Engineering and Design There are two types of field effect transistors
Alliance University (FET’s)

Lecture – 14 (i)Junction field effect transistor (JFET)

Oct 8th , 2012
(ii)Metal oxide field effect transistor (MOSFET)

Basics of Electronics Engineering EC-114, Electronics and Communication Department Basics of Electronics Engineering EC-114, Electronics and Communication Department

Types of Field Effect Transistors Junction Field Effect Transistor (JFET)

A junction field effect transistor is a three terminal semiconductor device in which current
n-Channel JFET conduction is by one of the carrier either electrons or holes.
» JFET
FET p-Channel JFET
Construction details
MOSFET (IGFET) of a n-channel JFET

Enhancement Depletion
MOSFET MOSFET

n-Channel p-Channel n-Channel p-Channel

EMOSFET EMOSFET DMOSFET DMOSFET

Basics of Electronics Engineering EC-114, Electronics and Communication Department Basics of Electronics Engineering EC-114, Electronics and Communication Department
Symbol of JFET JFET Biasing

Drain Drain
Drain
The Gate-Source region is reverse biased. This
means that the device has high input impedance.

The drain is so biased that drain current flows

from drain to source.

Gate Gate Since gate current is equal to zero in all JFET’s the
Gate
drain current is equal to source current. Is = ID

N-channel JFET Biasing Circuit.

Source Source
Source

n-channel JFET p-channel JFET

n-channel JFET
Offset-gate symbol

Basics of Electronics Engineering EC-114, Electronics and Communication Department Basics of Electronics Engineering EC-114, Electronics and Communication Department

Principle and Working of JFET at various GATE Another schematic with color coding
potentials

Drain
-
N

Gate
+ +
P P
-

-
N
+
Source

Basics of Electronics Engineering EC-114, Electronics and Communication Department Basics of Electronics Engineering EC-114, Electronics and Communication Department
Output Characteristics For different values of VGS
At the pinch-off point:

Any further increase in VGS does

not produce any increase in ID.

VDS at pinch-off is denoted as

Vp.

ID is at saturation or maximum.
It is referred to as IDSS.

The ohmic value of the channel is

at maximum

Pinch off point

Eventually ID will reach 0A. VGS at this point is called VGS(off).

VGS(off) = Gate Source Cutoff Voltage

Basics of Electronics Engineering EC-114, Electronics and Communication Department Basics of Electronics Engineering EC-114, Electronics and Communication Department

Trans Conductance Curve Expression for Drain Current

The transconductance curve of JFET is the curve between ID and VGS.

Note that current increases faster when VGS approaches zero.

Basics of Electronics Engineering EC-114, Electronics and Communication Department Basics of Electronics Engineering EC-114, Electronics and Communication Department
Drain current Advantages of JFET
(i) It has very high input impedance.

(ii) JFET has negative temperature coefficient of resistance. This avoids the risk of thermal
runaway.

(iii) JFET has a high power gain. This eliminates the necessity of driver changes.

(iv) A JFET has a smaller size, longer life and high efficiency.

Basics of Electronics Engineering EC-114, Electronics and Communication Department Basics of Electronics Engineering EC-114, Electronics and Communication Department

Numerical You should know by now

Difference between JFET and BJT

Features of JFET

Operating Principles of JFET

Construction of JFET n-channel and p-channel

Drain curves of JFET (output characteristics)

Basics of Electronics Engineering EC-114, Electronics and Communication Department Basics of Electronics Engineering EC-114, Electronics and Communication Department