Documente Academic
Documente Profesional
Documente Cultură
G1 E1 G2 E2
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol Conditions Rating Unit
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltaga VGES ±20 V
Collector current IC Continuous Tc=25°C 200 A
Tc=80°C 150
ICp 1ms Tc=25°C 400
Tc=80°C 300
-IC 150
-IC pulse 300
Collector Power Dissipation PC 1 device 780 W
Junction temperature Tj +150 °C
Storage temperature Tstg -40 to +125
Isolation voltage between terminal and copper base *1 Viso AC:1min. 2500 VAC
Screw Torque Mounting *2 3.5 N·m
Terminals *2 3.5
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5)
400 400
100 100
8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip
400 10
Collector - Emitter voltage : VCE [ V ]
T j=25°C T j=125°C 8
300
Collector current : Ic [A]
200
100 Ic=300A
2
Ic=150A
Ic=75A
0 0
0 1 2 3 4 5 5 10 15 20 25
Cies
10.0 VGE
Gate - Emitter voltage : VGE
Cres
1.0
Coes
VCE
0.1
0 10 20 30 0 300 600 900
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=4.7Ω, Tj= 25°C Vcc=600V, VGE=±15V, Rg=4.7Ω, Tj=125°C
10000 10000
Switching time : ton, tr, toff, tf [ nsec ]
100 100
tf
tf
10 10
0 100 200 300 0 100 200 300
Collector current : Ic [ A ] Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C Vcc=600V, VGE=±15V, Rg=4.7Ω
10000 30
Eoff(125°C)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
Eon(125°C)
ton 25
toff
1000 20
Eoff(25°C)
15 Eon(25°C)
tr
100 10
Err(125°C)
tf
5
Err(25°C)
10 0
1.0 10.0 100.0 0 100 200 300
Gate resistance : Rg [ Ω ] Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)
Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C +VGE=15V,-VGE <= 15V, RG >= 4.7Ω ,Tj <= 125°C
150 400
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon
300
Collector current : Ic [ A ]
100
200
50
Eoff
100
Err
0 0
1.0 10.0 100.0 0 400 800 1200
Gate resistance : Rg [ Ω ] Collector - Emitter voltage : VCE [ V ]
2MBI150UB-120 IGBT Module
Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.)
chip Vcc=600V, VGE=±15V, Rg=4.7Ω
400 1000
300
trr (125°C)
Irr (125°C)
Irr (25°C)
Tj=125°C
200 100 trr (25°C)
100
0 10
0 1 2 3 4 0 100 200 300
Forward on voltage : VF [ V ] Forward current : IF [ A ]
1.000
Thermal resistanse : Rth(j-c) [ °C/W ]
FWD
IGBT
0.100
0.010
0.001
0.001 0.010 0.100 1.000
Pulse width : Pw [ sec ]
Outline Drawings, mm
M233