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BY
BHAVANA.POTTURI
STEPS
Czochralski process
APPARATUS
OXIDATION
TYPES OF LITHOGRAPHY
1.POSITIVE PHOTO LITHOGRAPHY
2.NEGATIVE PHOTO LITHOGRAPHY
DIFFUSION
P- TYPE
B₂O₃,BCl₃
N –TYPE
P₂0₅
ION IMPLANTATION
DIFFERENCE BETWEEN DIFFUSION
AND ION IMPLANTATION AND DOPING
Doping is adding atoms to a material to modify the conduction properties, for example
to make an N type conductor or a P type conductor.
Diffusion is allowing atoms of one material to move by heating it enough that the atoms
can move to other positions. One can dope silicon by putting arsenic (or other dopants)
on the silicon surface, and putting the silicon wafer in an oven at a temperature that
allows the arsenic atoms to diffuse (or move) into the silicon and modify the conduction
properties. By choosing the proper temperature and diffusion time it can be possible to
control the depth and concentration of the arsenic in a way that is useful for making a
desired semiconductor device.
Ion implantation is making a beam of energetic ions and allowing them to hit a surface
made of some material -- a material different from the ions. It is used to modify the
properties of the material being bombarded. It can also be used to dope
semiconductors. The high energy of the ions can damage the lattice structure that is
being doped, so it is usually necessary to anneal the semiconductor by heating to allow
it to "heal itself". Ion implantation can also be used to harden metal surfaces or change
their friction properties by choosing the right type of ions to implant.
METALLIZATION
WORK FUNCTIONS
OHMIC CONTACTS
RECTIFYING CONTACTS
1.Filament Evaporation
2.Flash Evaporation
3.Electron-beam Evaporation
4.Sputtering
TESTING
PASSIVATION
PACKAGING
Example:nmos fabrication
Why gallium arsenide?
ON ARRANGEMENT
TYPES OF EPITAXY
1.VAPOUR PHASE EPITAXY
2MOLECULAR –BEAM EPITAXY
3LIQUID-PHASE EPITAXY
MESFET
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