AZ 5200-E Photoresist Offers High Resolution for Semiconductor Applications

AZ 5200-E Photoresist
Data Package
Original i-line resists Various viscosity grades

for a multitude of applications.
Sensitive in i-line and g-line Can be developed

in a variety of metal ion free
and inorganic developers
(with and without surfactants)
High thermal stability. Can be used in a positive mode

and with a special
image reversal process.
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are
registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow,
SWG, and TARP are trademarks of AZ Electronic Materials.
i-line Resolution at Specific Film Thickness
6
Film Thickness (µm)
AZ 5218-E
3
AZ 5214-E
2
AZ 5209-E
0.5 0.6 0.7 0.8 0.9 1.0 ~ 1.5 ~ 2

Resolution (µm)
Spin Speed Curves
6
F ilm T h ic k n e s s , µ m
5
4 AZ 5218-E
3 AZ 5209-E
2
1 AZ 5214-E
0
0 1000 2000 3000 4000
rpm
DTC Swingcurve for AZ 5214-E Resist

AZ 1:1 Developer
65
60
max = 1.326µm
55
mJ/cm²
50 max =1.194µm
min = 1.381µm
45
min = 1.250µm
40
1.14 1.18 1.22 1.26 1.3 1.34 1.38 1.42 1.46 1.5
Film Thickness [µm]
Optical Parameters
◊ Refractive Index
Bleached 365nm 405nm 435nm
n 1.6904 1.6667 1.6534
k 0.0012 0.0005 0.0004
Unbleached
n 1.6990 1.6888 1.6758
k 0.0175 0.0179 0.0040
Optical Parameters
◊ Dill Parameters
i-line: g-line:
A = 0.6181 (µm-1) A= NA
B = 0.0314 (µm-1) B= NA
C = 0.0284 (cm2/mJ) C= NA
◊ Cauchy Coefficients
A B C
Bleached 1.5908 0.011525µm² 6.70E-07µm4
Unbleached 1.6035 0.005574µm² 2.34E-03µm4

Optical Parameters - Absorptivity
0.035
0.030
0.025
322 nm 385 nm
0.020
abs
0.015
0.010
0.005
0.000
300 350 400 450 500 550 600 650
wave length, nm
Image Reversal Process
1. Prepare wafers (e.g. HMDS prime) Improved Adhesion
2. Spin coat 0.6-2.6µm
3. Soft bake 90-100°C/ 45-60sec hot plate Oven bake 90°C/ 30min
4. Expose (g-line, i-line, broad band) Under-exposure gives

lift off profile
5.PEB 110-120°C/ 45 sec or two step Inducing cross linking
6. Flood exposure (365-405nm/ 1-2J/cm²) Solubilization of previously

unexposed resist
Optimum resolution and

Line-width control with
7. Develop (MIF or IN developers) more dilute developers
AZ 5214E Photoresist
Process Conditions
Dense Lines
FT: 1.25µm
SB: 100°C/ 42 sec
NIKON 0.54 NA i-Line
No PEB
AZ 300 MIF Developer ,70 sec double puddle @ 20.0°C
2.0 µm L/S Exposure Latitude on Si, FT = 1.25 µm
E nominal = 84 mJ/cm², Exposure Latitude = 81%
2.40
D9813-S : Nominal 84 mJ/cm²

2.30 Exp. latitude 81 %
D9721: Nominal 77 mJ/cm²
Measured Linewidth [µm]
2.10
2.00
1.90
1.80
1.70
40 50 60 70 80 90 100 110 120
Exposure Dose [mJ/cm²]

SB: 100°C, 42 sec; PEB: None
AZ 300 MIF Developer ,70 sec double puddle @ 20.0°C
2.0 µm L/S Exposure Latitude on Si, FT = 1.25 µm
45mJ/cm² 55mJ/cm² 65mJ/cm² 75mJ/cm²
E nom = 84 mJ/cm²
80mJ/cm²
EXP.Lat. = 81%

AZ 300 MIF Developer ,70sec double puddle @ 20.0°C
Linearity on Si, FT = 1.25 µm Focus = 0.0 µm
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
75 mJ/cm² 85 mJ/cm² 95 mJ/cm²
0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Nominal Linewidth [µm]
Linearity on Si, FT = 1.25 µm
1.5µm 1.2µm 1.1µm 1.0µm
75 mJ/cm²
0.9µm
0.5µm 0.6µm 0.7µm 0.8µm

1.5µm 1.1µm 0.8µm 0.7µm
85 mJ/cm² 0.65µm
0.45µm 0.5µm 0.55µm 0.6µm

1.5µm 1.2µm 1.1µm 1.0µm
95 mJ/cm² 0.9µm
0.65µm 0.7µm 0.75µm 0.8µm

2.0 µm L/S Focus Latitude on Si, FT = 1.25 µm
2.4
2.2
2.0
1.8
1.6
1.4
-1.6 -1.2 -0.8 -0.4 0.0 0.4 0.8 1.2 1.6
Focus [µm]
1.4µm 1.0µm 0.6µm 0.2µm
75 mJ/cm²
0.0µm
-1.4µm -1.0µm -0.6µm -0.2µm

1.4µm 1.0µm 0.6µm 0.2µm
85 mJ/cm² 0.0µm
-1.4µm -1.0µm -0.6µm -0.2µm

1.4µm 1.0µm 0.6µm 0.2µm
95 mJ/cm² 0.0µm
-1.4µm -1.0µm -0.6µm -0.2µm

3µm L/S Image Reversal Process
Process conditions
FT: 4µm, SB: 110°C/90 sec
Exp. PE 400mJ/cm² with i-Line filter, PEB: 50°C/60sec then 110°C/90sec
Develop: AZ 917 MIF developer, 90sec spray @ room temperature
Thermal Stability of Large Pad
No Bake 110°C 115°C
120°C
SB: 100°C, 42 sec; PEB: None 125°C

Hard Bake: 120 sec/ hot plate
Process Conditions
Dense Lines
FT: 1.25µm
SB: 100°C/ 42 sec;
No PEB
AZ 1:1 Developer, 60 sec Immersion @ 24.5°C
Exposure Latitude 2.0 µm L/S on Si, FT = 1.25µm
75mJ/cm²
SB: 100°C/ 42 sec;

NIKON 0.54 NA i-Line 85mJ/cm² 80mJ/cm²
AZ 1:1 Developer 60sec immersion @ 24.5°C
2.40
E nominal = 68 mJ/cm², Exposure Latitude = 59%
D9822-S: Nominal 65 mJ/cm²
D9811 : Nominal 68 mJ/cm²
Exp. latitude 59 %
2.20
2.10
2.00
1.90
1.80
1.70
50 60 70 80 90
SB: 100°C/ 42 sec; Exposure Dose [mJ/cm²]
E nom = 68 mJ/cm²
75mJ/cm²
Exp.Lat. = 59%
SB: 100°C/ 42 sec;

NIKON 0.54 NA i-Line 85mJ/cm² 80mJ/cm²
Linearity on Si, FT = 1.25µm
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Nominal Linewidth [µm]
SB: 100°C/ 42 sec;
1.2µm 1.0µm 0.90µm 0.80µm
0.75µm
60 mJ/cm²
0.60µm 0.65µm 0.70µm

SB: 100°C/ 42 sec;
1.2µm 1.0µm 0.90µm 0.80µm
0.75µm
65 mJ/cm²
0.55µm 0.60µm 0.65µm 0.70µm

SB: 100°C/ 42 sec;
1.2µm 1.0µm 0.90µm 0.80µm
0.75µm
75 mJ/cm²
0.55µm 0.60µm 0.65µm 0.70µm

SB: 100°C/ 42 sec;
Focus Latitude 2.0 µm L/S on Si, FT = 1.25µm
2.4
2.2
2.0
1.8
65 mJ/cm²
1.6
1.4
-1.6 -1.2 -0.8 -0.4 0.0 0.4 0.8 1.2 1.6
SB: 100°C/ 42 sec; Focus [µm]
Focus Latitude 2.0 µm L/S on Si, FT = 1.25µm
1.4µm 1.0µm 0.60µm 0.20µm
0.00µm
65 mJ/cm²
-1.40µm -1.0µm -0.60µm -0.20µm

SB: 100°C/ 42 sec;

AZ 5200-E Photoresist Offers High Resolution for Semiconductor Applications

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AZ 5200-E Photoresist Offers High Resolution for Semiconductor Applications

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Drepturi de autor:

Formate disponibile

AZ 5200-E Photoresist

Original i-line resists Various viscosity grades

Sensitive in i-line and g-line Can be developed

High thermal stability. Can be used in a positive mode

0.5 0.6 0.7 0.8 0.9 1.0 ~ 1.5 ~ 2

DTC Swingcurve for AZ 5214-E Resist

Unbleached 1.6035 0.005574µm² 2.34E-03µm4

1. Prepare wafers (e.g. HMDS prime) Improved Adhesion

2. Spin coat 0.6-2.6µm

4. Expose (g-line, i-line, broad band) Under-exposure gives

5.PEB 110-120°C/ 45 sec or two step Inducing cross linking

6. Flood exposure (365-405nm/ 1-2J/cm²) Solubilization of previously

Optimum resolution and

D9813-S : Nominal 84 mJ/cm²

Exposure Dose [mJ/cm²]

115mJ/cm² 105mJ/cm² 95mJ/cm² 85mJ/cm²

0.5µm 0.6µm 0.7µm 0.8µm

0.45µm 0.5µm 0.55µm 0.6µm

0.65µm 0.7µm 0.75µm 0.8µm

-1.4µm -1.0µm -0.6µm -0.2µm

-1.4µm -1.0µm -0.6µm -0.2µm

-1.4µm -1.0µm -0.6µm -0.2µm

SB: 100°C, 42 sec; PEB: None 125°C

SB: 100°C/ 42 sec;

SB: 100°C/ 42 sec;

0.60µm 0.65µm 0.70µm

0.55µm 0.60µm 0.65µm 0.70µm

0.55µm 0.60µm 0.65µm 0.70µm

-1.40µm -1.0µm -0.60µm -0.20µm

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