P1203BV

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

30V 12mΩ @VGS = 10V 11A

SOP- 08

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ±20
TA = 25 °C 11
Continuous Drain Current2 ID
TA = 100 °C 7
1,2
A
Pulsed Drain Current IDM 40
Avalanche Current IAS 28
Avalanche Energy L = 0.1mH EAS 40 mJ
TA = 25 °C 2.5
Power Dissipation PD W
TA = 100 °C 1
Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 25
°C / W
Junction-to-Ambient RqJA 50
1
Pulse width limited by maximum junction temperature.
2
Limited only by maximum temperature allowed

Ver 1.0 1 2012/4/13

P1203BV
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1 1.8 3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS = 24V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 20V, VGS = 0V , TJ = 125 °C 10
On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 70 A
Drain-Source On-State VGS = 4.5V, ID = 11A 14 17.5
RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 11A 8.5 12
Forward Transconductance1 gfs VDS = 5V, ID = 10A 40 S
DYNAMIC
Input Capacitance Ciss 846
Output Capacitance Coss VGS = 0V, VDS = 20V, f = 1MHz 225 pF
Reverse Transfer Capacitance Crss 126
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.65 Ω
2 Qg
Total Gate Charge 17
2
VDS = 0.5V(BR)DSS,
Gate-Source Charge Qgs 2.7 nC
ID = 8.8A, VGS = 10V
2 Qgd
Gate-Drain Charge 4
2 td(on)
Turn-On Delay Time 9
2 tr
Rise Time VDD = 15V, ID = 12.5A, VGS = 10V, 40
nS
Turn-Off Delay Time2 td(off) RG=6Ω 20
Fall Time2 tf 6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 1.9 A
1 VSD IF = 25A, VGS = 0V
Forward Voltage 1.3 V
Reverse Recovery Time trr 21 nS
IF = 11 A, dlF/dt = 100A / mS
Reverse Recovery Charge Qrr 10 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

Ver 1.0 2 2012/4/13

P1203BV
N-Channel Enhancement Mode MOSFET

Ver 1.0 3 2012/4/13

P1203BV
N-Channel Enhancement Mode MOSFET

Ver 1.0 4 2012/4/13

P1203BV
N-Channel Enhancement Mode MOSFET

Ver 1.0 5 2012/4/13