Ceramics International 44 (2018) 3993–3999

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Ceramics International
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Dielectric and impedance spectroscopy of Bi(Ca0.5Ti0.5)O3 ceramic T

a,⁎ b a
Varsa Purohit , Rajib Padhee , R.N.P. Choudhary
a
Department of Physics, Siksha 'O' Anusandhan University, Bhubaneswar 751030, Odisha, India
b
School of Physics, Sambalpur University, Jyoti Vihar, Burla, Sambalpur 768019, Odisha, India

A R T I C L E I N F O A B S T R A C T

Keywords: Bismuth calcium titanate (BiCa0.5Ti0.5O3) ceramic, fabricated by a ceramic processing technique, has been
Solid state reaction characterized using a variety of experimental techniques. Analysis of basic crystal structure using X-ray dif-
X-ray diffraction fraction data exhibits the orthorhombic system. Measurements and detailed analysis of some electrical para-
Dielectric properties meters (i.e.,dielectric constant, loss tangent (energy loss), electrical impedance and modulus, conductivity, etc.)
Conductivity
of Bi(Ca0.5Ti0.5)O3 in a wide range of frequency (103–106 Hz) and temperature (30–500 °C) have provided some
interesting and useful data and results on structure–properties relationship, conduction mechanism, etc.The role
of interface, space charge polarization and Maxwell–Wagner dielectric relaxation in getting high dielectric
constant of the material at low frequencies and high temperatures has been discussed. Study of temperature
dependence of Nyquist plots clearly shows the contributions of grains in resistive and capacitive properties of the
material. The frequency of the applied electric field and temperature strongly affect the dielectric (permittivity
and dissipation of energy) and electrical (impedance, electrical modulus and conductivity) characteristics of the
material.

1. Introduction general formula (A1…. An)(B1…. Bm)O3 (A=mono/divalent, B=tri-

Nowadays, a large number of natural and synthetic materials of
different classes and structural families are available for application on
a daily basis and industrial purposes. Among them, dielectric materials,
best known for their efficient and functional essentiality in electronic
industries, have received much attention of researchers (based on ex-
perimental and theoretical consideration) for a large varieties of ap-
plications. For designing and fabrication of solid state devices and
sensors, much attention is paid on some important dielectric parameters
(i.e., dielectric constant, dissipation factor, impedance, conductivity,
etc). A good dielectric material must possess high dielectric strength,
(i.e., capable of sustaining high voltage without undergoing through the
mortification) and low dissipation factor (low energy loss) for some
device fabrication. Apart from macroscopic picture, it is essential to
have the microscopic data for better understanding of the dielectric
relaxation in the material for applications [1]. Determination of di-
electric constant and loss tangent as a function of temperature and
frequencies is one of the most convenient and responsive approach to
study materials in ceramic form. Some special class of dielectrics,
namely, ferroelectrics, pyroelectrics and piezoelectrics are much more
important and useful for fabrication of devices and sensors. These
materials belong to various structural families, including perovskite,
tungsten bronze, pyrochlore, etc. Out of these families, a large number
of materials belong to a simple or distorted perovskite family of a
pentavalent ions, n/m=number of elements). Some of the compounds
or solid solutions of this family, such as Pb(ZrTi)O3 (PZT), Pb(MgNb)O3
(PMN), etc., are widely and extensively used for devices. Recenly, much
attention has been paid on to manufacture devices using non-lead and
eco-friendly perovskite materials including barium titanate BaTiO3,
(BaSr)TiO3 (BST), Bi(Mg0.5Ti0.5)O3 (BMT) [2], Bi(Ni0.5Ti0.5)O3(BNT)
[3], BiFeO3 (BFO) etc. Nowadays, much attention has been paid on to
bismuth based lead-free dielectrics. Recent discovery of multiferroic
properties in BFO [4–6] has encouraged much to develop bismuth
based compounds for devices. Detailed literature survey on such type of
compounds shows that not much work on structural and electrical
characteristics of titled compound (Bi(Ca0.5Ti0.5)O3) has been reported
so far. In view of the importance of such type of eco-friendly material,
we have mainly studies the dielectric and impedance characteristics of
(Bi(Ca0.5Ti0.5)O3) ceramics for new experimental data and under-
standing for applications.
2. Experimental
The ceramic sample of Bi(Ca0.5Ti0.5)O3 (BCT) was prepared using
high-purity (~99.9%) oxides and carbonate: Bi2O3(M/s. M/s Central
Drug House Co), TiO2(M/s. Loba Chemie Co.) and CaCO3 (M/s. Loba
Chemie Co) via a mixed oxide route. The required amount (to satisfy
stoichiometry of BCT) of the above materials was carefully weighed

⁎
Corresponding author at: Department of Physics, Siksha 'O' Anusandhan University, Bhubaneswar 751030, Odisha, India.

https://doi.org/10.1016/j.ceramint.2017.11.194
Received 14 October 2017; Accepted 27 November 2017
Available online 06 December 2017
0272-8842/ © 2017 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
V. Purohit et al.
with high-precession electronic Mettler balance. The fine powder of the
above compounds was mixed thoroughly, first in air for an hour and
then in methanol, by using an agate mortar and pestle. The homo-
geneously mixed powder (kept in a high-purity alumina crucible) was
calcined in a high-temperature furnance at an optimized temperature of
850 °C for 4 h. The resulting calcined hard block was squashed to make
fine powder of the desired compound. To obtain preliminary informa-
tion on structural data and system to confirm of desired material in
single phase, diffraction data and pattern with X-ray radiation (wave-
length =1.5418 Å) were collected using powder diffractometer of M/S
Bruker (model D8 advance) in a wide range of Bragg scattering angles
with slow scan. The calcined powder was mixed with an organic binder
such as polyvinyl alcohol (PVA) to fabricate compacted (pellet) sample.
Since PVA is an organic binder, it can be volatilized from the cylindrical
pellets during high-temperature sintering. Then small disk-shaped cy-
lindrical pellets (12 mm diameter and 1–2 mm in thickness) were fab-
ricated from the calcined powder taking the help of a KBR press at a
pressure of 5 × 106 N/m2. The fabricated pellets were sintered at an
optimized temperature of 850 °C for 4 h. Then, both the parallel sur-
faces of the pellet sample were made flat and smooth by polishing the
surfaces by fine emery (polishing) paper. A layer of metallic silver paste
was applied on to both the parallel surfaces of the pellet sample fol-
lowed by anneling at 1500C for an hour before the measurement of
dielectric and impedance parameters. Some dielectric and electrical
parameters (i.e., capacitance, dissipation factor, impedance, phase
angle, resistanmce, etc) were recorded in a wide temperature range of
30–500 °C at different frequencies (103–106 Hz) using a computer-
controlled impedance analyzer (model 1735 of N4L). The highly sen-
sitive and precession electrometer of M/S Keithley (model 6517B) was
used to obtain current-voltage (J-E) characteristics of BCT.
3. Results and analysis
3.1. Determination of crystal data and basic structure
Basic crystal data (crystal system, unit cell parameters, etc) of BCT
were obtained using diffraction pattern (Fig. 1). To obtain the crystal
parameters of above unknown system and structure, almost all the
peaks of diffraction pattern were indexed in seven crystal classes in
three unit/lattice cell option (configuration) using a computer software
‘PowdMult’ [7]. The selection of valid and possible lattice parameters of
the BCT compound was made on the basis of the best fit (negligibly
small difference of experimentally measured and theoretically de-
termined interplanar distance of each reflection). Based on the best
possible fit and minimum standard deviation, the structure of the ma-
terial was considered in orthorhombic crystal system. The least-squares
refined lattice parameters are: a = 18.1836 (25)Å, b = 4.1569 (25)Å, c
= 22.688 (25) Å (with estimated standard deviation of unit cell length
in parenthesis). The normalized cell dimension of the sample can be
Fig. 1. XRD pattern of Bi(Ca0.5Ti0.5)O3.
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Ceramics International 44 (2018) 3993–3999
written as: a´= a/b = 4.374, b = 4.1569 and c´= c/b = 5.537 Å
which is consistent with those of distorted perovskite. The broadness of
some peaks suggests that the sample has small particles of nano size.
The linear dimension of the scattered crystallite, referred as particle size
(P) of sample, can be estimated using Debye–Scherrer's formula P =
0.89 . λ
where ß is the broadening of the diffraction line at half height of
ßcosθ
maximum intensity (in radian) and wavelength λ = 1.5406 Å (wave-
length of Cu-Kα) and θ is the Bragg's angle ( 20° ≤ 2θ ≤ 80°) [8]. Using
the above formula, the estimated particle (crystallite) size of the pre-
pared sample is found to be 63 nm. As powder sample was used to
obtain x-ray profile, broadening of diffraction peaks attributable to
instrumental effect and lattice strain has been ignored.
3.2. Study of dielectric characteristics
3.2.1. Effect of frequency on dielectric parameters
Using some geometrical and physical parameters (i.e., area (a),
thickness (t) and capacitance (C) of the sample) in a simple expression,
εr = Ct/ε0a, the relative dielectric constant (εr) or permittivity of the
samples can be calculated.Fig. 2 shows the effect of frequency on di-
electric parameters such as (a) relative permittivity (εr) and (b) tangent
loss (tan δ) in the frequency range of 1 kHz to 1 MHz at selected tem-
peratures. It is found that first the value of εr smoothly decreases with
rise in frequency, and then it becomes almost constant at higher fre-
quency showing saturation. This type of behavior is observed at all the
temperatures. In the region of low-frequency, generally diverse types of
many polarizations are present. Therefore, relative permittivity of
material is more in the region of low-frequency [9]. A decrease in di-
electric constant on rising field frequency is expected in almost all in-
sulators. It is on account of the existence of relaxation process in ma-
terial. It is commonly observed that on increasing frequency,total
polarization of material drops because polarization mechanism of dif-
ferent reasons ceases to contribute, as a result, permittivity drops down
[10]. Temperature and frequency dependence of dielectric loss or dis-
sipation factor is shown in Fig. 2(b). It exhibits a similar type of be-
havior as dielectric constant. This nature of variation of dissipation
factor can be understood with Maxwell and Wagner two-layer model
which has been developed on the basis of Koop's phenomenological
theory [11,12]. As per this model, the dielectric structure of material
has two layers: conducting grains and insulating grain boundaries. In
transport process, the electrons as charge carriers are more active at
grain boundaries at lower frequencies but at higher frequency, electrons
are active at conducting grains. It is found that at low frequencies,
electrons (charge carriers) need more energy for their motion due to
high value of resistance of grain boundaries. Because of this, the value
of dissipation factor (tan δ) is large at high temperatures. At high fre-
quencies, a small energy is required for motion of electrons due to small
resistance. Thus dissipation factor is small in the said temperature
range. The loss factor is significant for device quality, since it describes
the energy dissipation in insulators. A small value of tangent loss is
considered necessary to guarantee low power loss for a good dielectric
material.
3.2.2. Temperature dependence of dielectric properties
Fig. 3(a) exhibits the effect of temperature and frequency on in-
sulating (permittivity) properties of the material studied. It is noted that
dielectric parameters of the material below 240 °C is independent of
frequency and temperature signifying the important role of electronic
and/or ionic polarization [9]. The dielectric permittivity (dielectric
constant) increases sharply on rising the temperature. This nature of
variation in the dielectric parameters may be explained by scattering of
temperature dependent charge carriers or/and defects/impurities pre-
sent in the sample [13].
Fig. 3(b) explains the temperature dependence of tan δ at selected
frequency of the ac electric field. The nature of variation of tan δ as a
V. Purohit et al. Ceramics International 44 (2018) 3993–3999

Fig. 2. (a, b) Frequency dependence of ε r and tan δ of BiCa0.5Ti0.5O3 at different temperatures.

function of temperature is similar as of εr. The tan δ increases with rise j

Complex impedance (Z *) Z *=Z ′ − j Z ′′ = R s − …… .
in temperature and sharply increases at higher temperatures. This sharp ωcs (2)
increase is strongly influenced by the electrical conductivity [14].
Dielectric modulus (M *), M *=M ′ + j M ′′ = j ωCo Z *ω …. (3)

3.3. Impedance spectroscopy ε′′ −Z ′ M ′′

The electrical properties of the electro-ceramics and ionic con-
ductors (like impedance of grain, grain boundaries and electrodes) can
be studied by a nondestructive complex impedance method. It is a
powerful characterization technique to provide data and interpretation
on the real (resistive) and imaginary (reactive) components of complex
impedance of materials. We can not only obtain impedance and elastic
modulus, but also many related parameters can be achieved by means
of this spectroscopy technique. In this method, on application of an ac
electric field to the sample, a sinusoidal perturbation is created, as a
result, above properties of the materials can be obtained as a function of
frequency and temperatures [15–18].
Generally, the frequency dependence of dielectric properties of the
materials is described in terms of complex capacitive and impedance
quantities as follows,
Complex dielectric constant (ε*), ε* = ε´ − jε´´…………
Dielectric loss (tan δ)tan δ = = = ……
ε′ Z ′′ M′ (4)
Where ω = angular frequency, Rs and Cs = resistance and capacitance
in series respectively. With the above equations, there is a wide scope
for graphical representation to estimate the contributions of the above
parameters of the electrode/ceramic/electrode system.
Fig. 4(a, b) reveals the frequency and temperature dependence of Z'
as well as Z''. The response of applied ac electric field frequency on the
sample is commonly understood regarding some complex physical
quantities such as dielectric constant, impedance, electric modulus and
dielectric loss. In addition to above equations, the following equations
can also be used to get real and imaginary components of impedance
[19–21],
Z ′ = R/{(1 + (ωτ)2}and Z ′′ = ωR τ /{1 + (ωτ)2} ……………… (5)
Where R is a measured resistance, ω is the angular frequency of the
(1) electric field and relaxation time= τ = RC (C=capacitance). Relaxa-
tion time for bulk sample can be estimated by using the formula τ =

Fig. 3. (a, b) temperature dependence of ε r and tan δ of BiCa0.5Ti0.5O3at different frequency.

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Fig. 4. (a, b) Variation of Z' and Z′' with frequency of applied field at some selected temperatures of BiCa0.5Ti0.5O3.

Table 1 temperature and the release of space charge [24]. As observed in

Values of Rg, Cg for BCT ceramic at different temperatures. Fig. 4(b), there is no peak, as a result, the less or no dissipation of
current in the sample at low temperatures is observed. The presence of
Temperature(°C) Rg(Ω) Cg(F)
peak at higher temperature recommends the existence of dielectric re-
400 8.229 × 10 5
1.564 × 10−10 laxation in the material. The peak (maximum value) frequency at which
420 4.628 × 105 1.558 × 10−10 the imaginary value Z'' reaches the highest limit (Z''max) moves to the
440 2.648 × 105 1.555 × 10−10 higher frequency region on increasing temperature. Peaks broadening
460 1.68 × 105 1.556 × 10−10
and decreasing highest limit of imaginary impedance component (with
480 1.229 × 105 1.556 × 10−10
500 8.231 × 104 1.552 × 10−10 regard to temperature) specify that the dielectric relaxation mechanism
is temperature dependent. Therefore, this dielectric processes related to
relaxation occurs due to the lattice deformation and vacancies present
RgCg. The value of resistance Rg and capacitance Cg of grains can be in the material at higher temperatures [25,26].
taken from Table 1. As shown in Fig. 4(a), the value of Z' decreases on
rising temperature at low frequencies demonstrating the semi-
conducting nature of the material. As a consequence, the negative 3.3.1. Nyquist diagram
temperature coefficient of resistance (NTCR) or semiconducting beha- Fig. 5(a) shows the Nyquist diagram (i.e., complex impedance plots
vior of the material at higher temperatures [22] is observed. Hence, the (Z' vs Z′')) in the frequency range of (1 kHz to MHz) which illustrates a
relaxation properties of the sample is established [23]. The value of Z' temperature dependent semicircular arcs. When experimental data
smoothly rising on increasing both temperature and frequency (up to (real and imaginary component of Z) is compared, the components of
certain ranges), suggesting an increase in ac conductivity at low fre- circuit consisting of resistors and capacitors, we get fitting parameters.
quency (100 kHz) and temperature. As observed in figure, at higher In the circuit, the capacitor represents the polarization with storage of
frequencies, the value of Z' merges to a line at higher temperatures energy and resistor represents a conductive path. As the impedance is
displaying the existence of a mechanism which is strongly related to found to be decreasing on rise of temperature, it depends on con-
ductivity of the sample. Based on Debye, when we observe a perfect

Fig. 5. (a, b) Variation of Z′ with Z′' of BiCa0.5Ti0.5O3 at different temperatures with angle of depression at 400 °C.

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V. Purohit et al.
semicircle which centre falls exactly on the x-axis (real impedance
component), the system has Debye-type dielectric relaxation, and then
we observe single semicircle. But when semicircle has its centre below
the axis (normally observed at high temperatures), the relaxation pro-
cess is of non-Debye type. In the later case, we get two circle or semi-
circles [27,28]. When the centre of first semicircle falls at the Z′ axis, it
gives grain resistance or effect, and the second one is caused due to
grain boundary resistance. But in the present study, only one single
semicircle (with centre below the x-axis) is observed even at higher
frequencies and temperatures. This semicircles are endorsed to con-
duction of the material owing to grain effect. The dielectric relaxation
of Debye type is mainly responsible for the formation of such type of
single semicircle which magnitude can be estimated with the electric
circuit having parallel combination of a condenser (with capacity Cg)
and a resistor (with resistance Rg) as shown in Fig. 5. As the tempera-
ture dependent semicircle or circle has its own relaxation or char-
acteristic frequency, the relaxation time (τ) related to the circle can be
estimated using the relaxation time τ = Rg Cg [29]. As can be seen in
the figure, the grain boundaries do not contribute to the impedance or
electrical parameters particularly at said frequency and temperature
ranges. Therefore, for the transport properties or electrical conduction
in the material, only grains are responsible. The value of grain or bulk
resistance (Rg) can be determined with the help of diameter of the
semicircle. The best agreement between experimental and model
parameter ( obtained from the circuit using the software Z Simp Win
version 2) suggests the accuracy and validity of the experimental data
and theoretical proposed model.
3.4. Modulus analysis
To estimate the resistive and capacitive parameters of dielectrics in
ac electrical field, an electric modulus spectroscopy technique is used.
Study of frequency dependence of electrical modulus helps to analyse
the occurence of relaxation processes in materials. Using this technique,
various electrical processes and properties of the materials can be
analysed including polarization, role of grain boundary in the con-
duction, ac/dc electrical conductivity, dielectric relaxation, etc [21,24].
The effect of temperature and frequency on the above parameters can
also be explored with this technique [30]. The following real and
imaginary components of complex modulus important (M*) can be used
to calculate an important parameter of relaxation process (relaxation
time, τ);
(ωRC )2 ⎤ ω2τ 2 ⎤
M′ = A ⎡ = A⎡ …………… .
⎢ 2 ⎥ ⎢ 2 2
⎣ 1 + (ωRC ) ⎦ ⎣1 + ω τ ⎥ ⎦
Fig. 6. (a, b)Variation of M' and M′' with frequency at different temperatures of BiCa0.5Ti0.5O3.
Ceramics International 44 (2018) 3993–3999
ωRC ⎤ = A ⎡ ωτ
M″ = A ⎡ ⎤ …………… .
⎢ 2
⎣ 1 + (ωRC ) ⎥⎦ ⎣ 1 + ω2τ 2 ⎦ (7)
Where A=ratio of capacitance (C) in vacuum and dielectric (Co/C),
R=resistance and ω =angular frequency of applied ac field.
Using grains and grain boundary effect in electric modulus tech-
nique, we can easily study inhomogeneous nature of polycrystalline
samples. This information cannot be obtained from complex impedance
graphs. This technique is also used effectively to estimate electrode
contribution in the total resistance. It is to be seen that impedance
technique cannot provide electrode contribution in the resistive /ca-
pacitive characteristics of the material.
Fig. 6(a, b) represents the frequency of the electric field (1 kHz to
1 MHz) and temperatures (400° to 500 °C) on modulus components; M'
and M''. A continuous decrease in the value of M′ in the low-frequency
region is observed here. Then, there is a continuous increase in its value
on increasing frequency and reached to a saturated asymptotic value at
higher frequencies for all temperatures. To explain the transport
properties and conduction mechanism in the material, a short-range
mobility of charge carriers is considered. It suggests that under the
influence of dc electric field there is a lack of restoring force which
affect the flow of charge carriers [31]. As observed in Fig. 6(b), initially,
the value of M′' increases with frequency upto its maximum (peak)
value (M′max), then decreases. It is also seen that with increasing tem-
perature, position of M''max moves to the higher frequency side. As peak
position shifts to the higher frequency side at higher temperatures, the
thermal energy is found to be responsible for activation of charge car-
riers. When the broadening of the asymmetric peak increases on rising
temperature, the relaxation time of charge carriers decreases. This si-
tuation is observed only in case of non-Debye type of relaxation me-
chanism.
3.5. Electrical conductivity
Fig. 7(a) discusses the impact of frequency and temperature on ac
conductivity (σ ac) of the material. To get the value of ac conductivity
(σac), some measured dielectric parameters of the sample have been
introduced in the expression; σ ac = ω εr εo tan δ,where all the symbols
have their usual meanings [32].
The frequency variation of σac in the range of 1 kHz to 1 MHz of the
compound is studied in the high temperature range (400–500 °C). The
obtained results are plotted as log σac(ω) versus log frequency (f) at a
few selected temperature (Fig. 7(a)). A linear increase in σac (ω) with
increase of frequency is observed. Initially, a plateau region (frequency
independent) is observed which is related to σdc. On further increase of
(6) frequency of the applied field, an increase of conductivity is established
in the graph. The nature of the frequency reliant conductivity follows
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Fig. 7. (a, b) Frequency and temperature dependence of ac conductivity (σac) of BiCa0.5Ti0.5O3.

ωn rule and hopping process of the conduction mechanism. Tempera-

ture has considerable effect on hopping frequency. Experimental results
of frequency and temperature dependence of conductivity can be ex-
plained using Jonscher's power law [33]: σac(ω) = σdc+Aωn where A
is a pre-exponential factor, angular frequency (ω) = 2пf, n is the ex-
ponential power factor with its limiting value of 0 < n < 1, and other
parameters have their usual meaning. This universal power law can be
correlated to hopping conduction process. Some other physical pro-
cesses can be related to the value of power exponent n. For example, for
n < 1, hopping of the charge carriers is related to the translational
motion. But, for n > 1, a localized small hopping of the charge carriers
is considered. This situation and observation clearly suggests an im-
portant role of thermal effect in the conduction process. Based on the
Jonscher power law, the origin of the ac conductivity, relaxation pro-
cess and role of conduction electrons in the transport properties of the
material can be explained. The low-frequency plateau dispersion region
(dc conductivity), associated with ac conductivity, and high frequencies
dispersion region related to dc concuctivity, can be understood with Fig. 8. Electric field-temperature dependent current density of BiCa0.5Ti0.5O3.
power law [34].
Fig. 7(b) shows the temperature (inverse) and frequency depen- 4. Conclusion
dence of ac conductivity (σac). An increase in value of log σac is ob-
served when we increase the temperature. This semiconducting nature Polycrystalline Bi(Ca0.5 Ti0.5)O3 material has been synthesised by
of conductivity variation is understood with the motion of charge car- ceramic processing technique (i.e., mixed oxide route). Preliminary
riers due to hopping process at higher temperatures. Using the standard structural analysis using x-ray diffraction data has revealed the single
Arrhenius Equation:σdc=σ0 exp(-Ea/KBT) (KB =Boltzmann constant, [phase of orthorhombic system. The frequency of the applied ac electric
σ0 = pre-exponential factor, and T= working temperature), the tem- field and temperature have an effect on the dielectric parameters
perature dependence of activation energy Ea of the sample can be ob- (permittivity and dissipation factor). The electrical parameters have
tained. Based on the above equation, the estimated value of Ea of 0.9, been obtained from the dielectric and impedance measurements. The
0.76, 0.6, 0.55, 0.45 is found to be at 1, 10, 100, 500 kHz and high dielectric constant of the material has been explained using
1 MHz.respectively at high temperatures. As observed, the activation Maxwell–Wagner model and space charge polarization. Though dis-
energy of the compound is significantly effect by frequency. It is as- sipation factor is relying on temperature, the compound has low energy
sumed that this energy is contributed from the motion of charge carriers loss even at higher temperatures (500 °C at 500 kHz), which also de-
and creation of vacancies at higher temperatures. In addition to the creases as frequency increases. Owing to the small energy dissipation
above, structural defects also play an important in the process at higher factor, the quality factor of the material is found to be high, as a result,
temperatures in the polycrystalline sample [35]. As a result, the acti- the material can be used as microwave device component. The com-
vation energy is diminished by reduction of the contribution of acceptor plex-impedance plots provide valid explanation and applications of
at higher temperatures. conduction phenomenon of the material. The frequency dependence of
the ac conductivity follows Jonscher's universal power law.
3.6. Leakage current characteristics

Fig. 8 displays the graphical plot of electric field (E) dependent of Acknowledgements
current density (J) of the sample in the temperature range of
260–360 °C. An increase of leakage current with increase in tempera- The authors are grateful to Dr. Satyabati Das (IIT BBSR) for her kind
ture is observed suggesting the important role of thermally assisted helps in some experimental work.
conduction process in the material. As the plot is not linear, it may
prove the existence of non Ohmic characteristics in the system [36].

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