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DATA SHEET
TDA9850
I2C-bus controlled BTSC
stereo/SAP decoder
Preliminary specification 1995 Jun 19
File under Integrated Circuits, IC02
Philips Semiconductors Preliminary specification
FEATURES
• Quasi alignment-free application due to automatic
adjustment of channel separation via I2C-bus
• Dbx noise reduction circuit
• Dbx decoded stereo, Second Audio Program (SAP) or
mono selectable at the AF outputs
• Additional SAP output without dbx, including GENERAL DESCRIPTION
de-emphasis The TDA9850 is a bipolar-integrated BTSC stereo/SAP
• High integration level with automatically tuned decoder (I2C-bus controlled) for application in TV sets,
integrated filters VCRs and multimedia.
• Input level adjustment I2C-bus controlled
• Alignment-free SAP processing
• Stereo pilot PLL circuit with ceramic resonator,
automatic adjustment procedure for stereo channel
separation, two pilot thresholds selectable via I2C-bus
• Automatic pilot cancellation
• Composite input noise detector with I2C-bus selectable
thresholds for stereo and SAP off
• I2C-bus transceiver.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
TDA9850 SDIP32 plastic shrink dual in-line package; 32 leads (400 mil) SOT232-1
TDA9850T SO32 plastic small outline package; 32 leads; body width 7.5 mm SOT287-1
1995 Jun 19 2
Philips Semiconductors Preliminary specification
License information
A license is required for the use of this product. For further information, please contact:
COMPANY BRANCH ADDRESS
THAT Corporation Licensing Operations 734 Forest St.
Marlborough, MA 01752
USA
Tel.: (508) 229-2500
Fax: (508) 229-2590
Tokyo Office 405 Palm House, 1-20-2 Honmachi
Shibuya-ku, Tokyo 151
Japan
Tel.: (03) 3378-0915
Fax: (03) 3374-5191
1995 Jun 19 3
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BLOCK DIAGRAM
Philips Semiconductors
I2C-bus controlled BTSC stereo/SAP decoder
C3 +
C4 ceramic
C2 + C5 Q1 resonator C6 + C7 +
R1
13 14 15 16 17 18 19
L+R stereo
27
DEMATRIX OUTL mono
+ SAP
STEREO DECODER MODE to
L − R/SAP 21
SELECT OUTR audio
processing
TDA9850
C8
22
composite INPUT NOISE STEREO/SAP
11 DE-EMPHASIS
+
23
input ADJUST SAP without DBX
C1
7
SAP STEREO SUPPLY LOGIC, I2C-
DBX ADJUST TRANSCEIVER
DEMODULATOR 28
MAD
5 4 26 3 1 2 32 31 30 29 25 20 10 12 6 24 8 9
MHA010
R2
+ + + + + + + + + +
C16 C15 C17 C19 C18
C14 C12 C11 C10 C9 CL CR
R3 SDA SCL
Preliminary specification
TDA9850
Fig.1 Block, application and test diagram.
Philips Semiconductors Preliminary specification
COMPONENT LIST
Electrolytic capacitors ±20%; foil capacitors ±10%; resistors ±5%; unless otherwise specified; see Fig.1.
COMPONENT VALUE TYPE REMARK
C1 10 µF electrolytic 63 V
C2 470 nF foil
C3 4.7 µF electrolytic 63 V
C4 220 nF foil
C5 10 µF electrolytic 63 V; Ileak < 1.5 µA
C6 4.7 µF electrolytic 63 V
C7 4.7 µF electrolytic 63 V
C8 15 nF foil
C9 10 µF electrolytic 63 V ±10%
C10 10 µF electrolytic 63 V ±10%
C11 1 µF electrolytic 63 V
C12 1 µF electrolytic 63 V
C13 47 nF foil ±5%
C14 10 µF electrolytic 63 V
C15 100 nF foil
C16 4.7 µF electrolytic 63 V
C17 100 nF foil
C18 100 µF electrolytic 16 V
C19 100 µF electrolytic 16 V
CR 2.2 µF electrolytic 63 V
CL 2.2 µF electrolytic 63 V
R1 2.2 kΩ
R2 8.2 kΩ ±2%
R3 160 Ω ±2%
Q1 CSB503F58 radial leads
CSB503JF958 alternative as SMD
1995 Jun 19 5
Philips Semiconductors Preliminary specification
PINNING
1995 Jun 19 6
Philips Semiconductors Preliminary specification
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Philips Semiconductors Preliminary specification
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Philips Semiconductors Preliminary specification
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage 0 10 V
VVCAP voltage of VCAP to GND 0 VCC V
VVEO voltage of VEO to GND 0 1⁄
2VCC V
VSDA voltage of SDA to GND 0 8.5 V
VSCL voltage of SCL to GND 0 8.5 V
Vn voltage of all other pins to GND VCC ≥ 8.5 V 0 8.5 V
VCC < 8.5 V 0 VCC V
Tamb operating ambient temperature Tj < 125 °C −20 +70 °C
Tstg storage temperature −65 +150 °C
Ves electrostatic handling HBM; note 1
Note
1. Human Body Model (HBM): C = 100 pF; R = 1.5 kΩ; V = 2 kV; charge device model: C = 200 pF; R = 0 Ω;
V = 300 V.
THERMAL CHARACTERISTICS
1995 Jun 19 9
Philips Semiconductors Preliminary specification
REQUIREMENTS FOR THE COMPOSITE INPUT SIGNAL TO ENSURE CORRECT SYSTEM PERFORMANCE
Notes
1. Low-ohmic preferred, otherwise the signal loss and spreading at COMP, caused by ZO and the composite input
impedance (see Chapter “Characteristics”; row head “Input level adjustment control”) must be taken into account.
2. In order to prevent clipping at over-modulation (maximum deviation in the BTSC system for 100% modulation is
73 kHz).
3. For example colour bar or flat field white; 100% video modulation.
1995 Jun 19 10
Philips Semiconductors Preliminary specification
CHARACTERISTICS
All voltages are measured relative to GND; VCC = 9 V; Rs = 600 Ω; RL = 10 kΩ; AC-coupled; CL = 2.5 nF; fi = 1 kHz;
Tamb = +25 °C; see Fig.1; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
VCC supply voltage 8.5 9 9.5 V
Vripple(p-p) allowed supply voltage fi = 50 Hz to 100 kHz − − 100 mV
ripple (peak-to-peak
value)
ICC supply current − 58 75 mA
Vref internal reference voltage − 3.7 − V
at pin Vref
αct crosstalk between bus notes 1 and 2 − 110 − dB
inputs and signal outputs
Input level adjustment control
GLA input level adjustment −3.5 − +4.0 dB
control
Gstep step resolution − 0.5 − dB
Vi(rms) maximum input voltage 2 − − V
level (RMS value)
Zi input impedance 29.5 35 40.5 kΩ
Stereo decoder
MPXL+R input voltage level for input level adjusted via − 250 − mV
100% modulation L + R; I2C-bus (L + R;
25 kHz deviation fi = 300 Hz); monitoring
(RMS value) OUTL or OUTR
MPXL−R input voltage level for − 707 − mV
100% modulation L − R;
50 kHz deviation
(peak value)
MPX(max) maximum headroom for fmod < 15 kHz; 9 − − dB
L + R, L, R THD < 15%
MPXpilot nominal stereo pilot − 50 − mV
voltage level (RMS value)
STon(rms) pilot threshold voltage data STS = 1 − − 35 mV
stereo on (RMS value) data STS = 0 − − 30 mV
SToff(rms) pilot threshold voltage data STS = 1 15 − − mV
stereo off (RMS value) data STS = 0 10 − − mV
Hys hysteresis − 2.5 − dB
OUTL+R output voltage level for input level adjusted via 480 500 520 mV
100% modulation L + R at I2C-bus (L + R;
OUTL, OUTR fi = 300 Hz); monitoring
OUTL or OUTR
1995 Jun 19 11
Philips Semiconductors Preliminary specification
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Philips Semiconductors Preliminary specification
1995 Jun 19 13
Philips Semiconductors Preliminary specification
1995 Jun 19 14
Philips Semiconductors Preliminary specification
I2C-BUS PROTOCOL
NAME DESCRIPTION
S START condition; generated by the master
Standard SLAVE ADDRESS (MAD) 1011011 pin MAD not connected
Pin programmable SLAVE ADDRESS 1011010 pin MAD connected to ground
R/W 1 (read); generated by the master
A acknowledge; generated by the slave
DATA slave transmits an 8-bit data word
MA acknowledge; generated by the master
P STOP condition; generated by the master
The master generates an acknowledge when it has received the first data word, ALR1, then the slave transmits the next
data word ALR2. The master next generates an acknowledge, then slave begins transmitting the first data word ALR1,
and so on until the master generates no acknowledge and transmits a STOP condition.
1995 Jun 19 15
Philips Semiconductors Preliminary specification
If more than 1 byte of DATA is transmitted, then auto-increment is performed, starting from the transmitted subaddress
and auto-increment of subaddress in accordance with the order of Table 5 is performed.
Table 6 Definition of third byte, third byte after MAD and SAD
MSB LSB
FUNCTION REGISTER
D7 D6 D5 D4 D3 D2 D1 D0
Control 1 CON1 0 0 0 0 ST3 ST2 ST1 ST0
Control 2 CON2 0 0 0 0 SP3 SP2 SP1 SP0
Control 3 CON3 SAP STEREO 0 SMU LMU 0 0 0
Control 4 CON4 0 0 0 0 L3 L2 L1 L0
Alignment 1 ALI1 0 0 0 A14 A13 A12 A11 A10
Alignment 2 ALI2 STS 0 0 A24 A23 A22 A21 A20
Alignment 3 ALI3 ADJ 0 0 0 0 TC2 TC1 TC0
1995 Jun 19 16
Philips Semiconductors Preliminary specification
FUNCTION DATA
IS RANGE TC2 TC1 TC0
+30% 1 0 0
+20% 1 0 1
+10% 1 1 1
Nominal 0 1 1
−10% 0 1 0
−20% 0 0 1
−30% 0 0 0
1995 Jun 19 17
Philips Semiconductors Preliminary specification
GL DATA DATA
THRESHOLD
(dB) L3 L2 L1 L0 SP3 SP2 SP1 SP0
+4.0 1 1 1 1 SAP1 0 0 0 0
+3.5 1 1 1 0 SAP2 0 0 0 1
+3.0 1 1 0 1 SAP3 0 0 1 0
+2.5 1 1 0 0 SAP4 0 0 1 1
+2.0 1 0 1 1 SAP5 0 1 0 0
+1.5 1 0 1 0 SAP6 0 1 0 1
+1.0 1 0 0 1 SAP7 0 1 1 0
+0.5 1 0 0 0 SAP8 0 1 1 1
0.0 0 1 1 1 SAP9 1 0 0 0
−0.5 0 1 1 0 SAP10 1 0 0 1
−1.0 0 1 0 1 SAP11 1 0 1 0
−1.5 0 1 0 0 SAP12 1 0 1 1
−2.0 0 0 1 1 SAP13 1 1 0 0
−2.5 0 0 1 0 SAP14 1 1 0 1
−3.0 0 0 0 1 SAP15 1 1 1 0
−3.5 0 0 0 0 SAP16 1 1 1 1
1995 Jun 19 18
Philips Semiconductors Preliminary specification
Table 16 Alignment data for expander in read register ALR1 and ALR2 and in write register ALI1 and ALI2
DATA
FUNCTION D4 D3 D2 D1 D0
AX4 AX3 AX2 AX1 AX0
Gain increase 1 1 1 1 1
1 1 1 1 0
1 1 1 0 1
1 1 1 0 0
1 1 0 1 1
1 1 0 1 0
1 1 0 0 1
1 1 0 0 0
1 0 1 1 1
1 0 1 1 0
1 0 1 0 1
1 0 1 0 0
1 0 0 1 1
1 0 0 1 0
1 0 0 0 1
Nominal gain 1 0 0 0 0
0 1 1 1 1
Gain decrease 0 1 1 1 0
0 1 1 0 1
0 1 1 0 0
0 1 0 1 1
0 1 0 1 0
0 1 0 0 1
0 1 0 0 0
0 0 1 1 1
0 0 1 1 0
0 0 1 0 1
0 0 1 0 0
0 0 0 1 1
0 0 0 1 0
0 0 0 0 1
0 0 0 0 0
1995 Jun 19 19
Philips Semiconductors Preliminary specification
MHA011
10 3
handbook, full pagewidth
VSAP
(1)
(mV RMS)
(2)
2
10
(3)
10
1
10 −1 1 fi (kHz) 10
150 µs de-emphasis.
(1) 100% modulation.
(2) 14% modulation.
(3) 1% modulation.
1995 Jun 19 20
Philips Semiconductors Preliminary specification
1 Vb
Vb
MHA013
600 Ω
MHA014
3 4
Vb Vb
10 kΩ
10 kΩ
MHA015 MHA016
5
8
Vb
1.8 kΩ
20 kΩ
20 kΩ
MHA018
MHA017
1995 Jun 19 21
Philips Semiconductors Preliminary specification
12 10
9 4.7 kΩ
300 Ω
1.8 kΩ
200 Ω
MHA019
Vb
MHA020
Fig.10 Pin 9; SCL. Fig.11 Pin 10; VCC and pin 12; VCAP.
11
Vb
13
Vb
30 kΩ
3.5 kΩ
MHA022
MHA021
Vb 14
15
Vb
8.5 kΩ
10 kΩ
12 kΩ
10 kΩ
MHA024
MHA023
1995 Jun 19 22
Philips Semiconductors Preliminary specification
17
16
Vb
Vb
3 kΩ
MHA025
MHA026
20
18
Vb
Vb
20 kΩ
10 kΩ
10 kΩ 20 kΩ
MHA027
MHA028
Fig.18 Pin 18; CMO and pin 19; CSS. Fig.19 Pin 20; CR and pin 25; CL.
Vb
21
22
Vb
5 kΩ
10 kΩ
MHA030
MHA029
Fig.20 Pin 21; OUTR and pin 27 OUTL. Fig.21 Pin 22; CSDE.
1995 Jun 19 23
Philips Semiconductors Preliminary specification
24
Vb
23
Vb
3.4 kΩ
3.4 kΩ
MHA031
MHA032
26 28
Vb Vb
30 kΩ 1.8 kΩ
MHA033 MHA034
31
29
Vb Vb
4.6 kΩ
MHA035
MHA036
Fig.26 Pin 29; CTW and pin 30; CTS. Fig.27 Pin 31; CW and pin 32; CS.
1995 Jun 19 24
Philips Semiconductors Preliminary specification
PACKAGE OUTLINES
SDIP32: plastic shrink dual in-line package; 32 leads (400 mil) SOT232-1
D ME
seating plane
A2 A
L A1
c
Z e w M (e 1)
b1
MH
b
32 17
pin 1 index
E
1 16
0 5 10 mm
scale
UNIT
A A1 A2
b b1 c D (1) E (1) e e1 L ME MH w Z (1)
max. min. max. max.
1.3 0.53 0.32 29.4 9.1 3.2 10.7 12.2
mm 4.7 0.51 3.8 1.778 10.16 0.18 1.6
0.8 0.40 0.23 28.5 8.7 2.8 10.2 10.5
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
92-11-17
SOT232-1
95-02-04
1995 Jun 19 25
Philips Semiconductors Preliminary specification
SO32: plastic small outline package; 32 leads; body width 7.5 mm SOT287-1
D E A
X
y HE v M A
32 17
Q
A2 A
A1 (A 3)
pin 1 index
θ
Lp
1 16 L
w M detail X
e bp
0 5 10 mm
scale
0.3 2.45 0.49 0.27 20.7 7.6 10.65 1.1 1.2 0.95
mm 2.65 0.25 1.27 1.4 0.25 0.25 0.1
0.1 2.25 0.36 0.18 20.3 7.4 10.00 0.4 1.0 0.55 8o
0.012 0.096 0.02 0.011 0.81 0.30 0.419 0.043 0.047 0.037 0o
inches 0.10 0.01 0.050 0.055 0.01 0.01 0.004
0.004 0.086 0.01 0.007 0.80 0.29 0.394 0.016 0.039 0.022
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
95-01-25
SOT287-1
97-05-22
1995 Jun 19 26
Philips Semiconductors Preliminary specification
Apply a low voltage soldering iron (less than 24 V) to the During placement and before soldering, the package must
lead(s) of the package, below the seating plane or not be fixed with a droplet of adhesive. The adhesive can be
more than 2 mm above it. If the temperature of the applied by screen printing, pin transfer or syringe
soldering iron bit is less than 300 °C it may remain in dispensing. The package can be soldered after the
contact for up to 10 seconds. If the bit temperature is adhesive is cured.
between 300 and 400 °C, contact may be up to 5 seconds. Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
SOLDERING SO 10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Introduction
A mildly-activated flux will eliminate the need for removal
There is no soldering method that is ideal for all of corrosive residues in most applications.
IC packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed Repairing soldered joints
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for Fix the component by first soldering two
printed-circuits with high population densities. In these diagonally-opposite end leads. Use only a low voltage
cases reflow soldering is often used. soldering iron (less than 24 V) applied to the flat part of the
lead. Contact time must be limited to 10 seconds at up to
This text gives a very brief insight to a complex technology. 300 °C. When using a dedicated tool, all other leads can
A more in-depth account of soldering ICs can be found in be soldered in one operation within 2 to 5 seconds at
our “IC Package Databook” (order code 9398 652 90011). between 270 and 320 °C.
1995 Jun 19 27
Philips Semiconductors Preliminary specification
DEFINITIONS
Purchase of Philips I2C components conveys a license under the Philips’ I2C patent to use the
components in the I2C system provided the system conforms to the I2C specification defined by
Philips. This specification can be ordered using the code 9398 393 40011.
1995 Jun 19 28
Philips Semiconductors Preliminary specification
NOTES
1995 Jun 19 29
Philips Semiconductors Preliminary specification
NOTES
1995 Jun 19 30
Philips Semiconductors Preliminary specification
NOTES
1995 Jun 19 31
Philips Semiconductors – a worldwide company
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Korea: Philips House, 260-199 Itaewon-dong,
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