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 Lecture Plan
Topics to be Covered

Module 1-- Introduction to Solid State Devices : Solid state device, Solid state
devices, Conductors, Semi-Conductors, Insulaters, Doping

Elemental and compound semiconductors : Examples (Si, GaAS,III-V Compounds,

II-VI Compounds), Fermi level, Fermi-Dirac distribution function
Equilibrium and steady state conditions , Equilibrium concentration of electrons and
holes : Mass action Law
Temperature dependence of carrier concentration : Intrinsic carrier concentration with
temperature, Temperature dependence of Majority carrier concentration in extrinsic
semi conductor
Carrier transport in semiconductors
Drift : Drift of carriers in electric field , Drift velocity, Mean free time, Impurity
scattering
Conductivity and Mobility : Electron mobility, Derivation of conductivity of
Semiconductor
Variation of mobility with temperature and doping : Effective mobility ,
Variation of mobility with doping
High Field Effects : Electron drift velocity vs electric field, Hall effect : Hall coefficient

Module 2--Excess carriers in semiconductors : Introduction

Generation mechanisms of excess carriers: Photo generation, Photo conductivity

Regeneration mechanisms of excess carriers : Direct band to band recombination,
Indirect Recombination
Quasi Fermi levels

Diffusion : Diffusion current derviation

Einstein relations

Continuity equations : Diffusion equations

Diffusion length : Steady state carrier injection and diffusion length

Gradient of quasi Fermi level

Module 3-- PN junctions : PN junctions under thermal equilibrium , Contact
potential
Electrical Field
Potential and Charge density at the junction : Distribution of carrier concentration,
Electric field and charge density
Energy band diagram : Energy band diagram of P-N junction

Built in potential, Electric field , potential distribution, Minority carrier distribution

Ideal diode equation : Diode parameters

Electron and hole component of current in forward biased p-n : Majority and
minority carrier currents

Piecewise linear model of a diode effect of temperature on V-I characteristics

Piecewise linear model of a diode effect of temperature on V-I characteristics

Module 4-- Diode capacitances : Depletion layer capacitance , Equilibrium Depletion

layer capacitance, Junction capacitance
Switching transients

Electrical Breakdown in PN junctions

Avalanche breakdown
Zener break down (abrupt PN junctions only) : comparison between Avalanche
breakdown and Zener breakdown
Tunnel Diode basics only : Reverse and forward bias
Metal Semiconductor contacts : Ideal metal semi conductor contact, Metal n type
semiconductor schottky contact, Metal P type semiconductor schottky contact
Ohmic and Rectifying Contacts,

Current voltage characteristics

Module 5--Basics of transistor

Bipolar junction transistor : Working

Current components : Terminal currents

Minority carrier distributions : Minority carrier distributions in a p-n-p ntraansistor,
in saturation mode of operation
Basic parameters : Performance parameters , injection efficiency, Base transport
factor
Collector Region
Evaluation of terminal currents : Derivation
Transistor action : Common base configuration , CE configuration
Transistor action

Base width modulation , Early effect

Module 6-- Metal Insulator semiconductor devices ,The ideal MOS capacitor, Band
bending in MOS devices, Accumulation, Depletion
Band diagrams at equilibrium

Depletion and inversion,

Surface potential,CV characteristics

Effects of real surfaces

Work function difference

Interface charge, threshold voltage

MOSFET: Output characteristics, transfer characteristics, sub threshold

characteristics
MOSFET scaling (basic concepts),Principle of operation, Linear Region , I-V
characteristics
FinFET-structure and operation
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