Bipolar Junction Transistor (BJT) &

Field Effect Transistor (FET)

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 ONE Mark Questions
01. The transit time of the current carriers through the channel of an JFET decides its ____
characteristic (GATE - 94)
(a) Source (b) Drain
(c) Gate (d) Source and drain

02. Channel current is reduced on application of a more positive voltage to the gate of
the depletion mode n-channel MOSFET. (TRUE / FALSE) (GATE - 94)

03. The break down voltage of a transistor with its base open is BVCEO and that with emitter
open is BVCBO, then (GATE - 95)
(a) BVCEO = BVCBO
(b) BVCEO > BVCBO
(c) BVCEO < BVCBO
(d) BVCEO is not related to BVCBO

04. A BJT is said to be operating in the saturation region if

(GATE - 95)
(a) Both junctions are reverse biased
(b) Base-emitter junction is R.B and base collector junction is forward biased
(c) base-emitter junction is forward biased and base-collector junction reverse biased
(d) both the junctions are forward biased

05. The Ebers-Moll model is applicable to

(GATE - 95)
(a) Bipolar junction transistors
(b) NMOS transistors
(c) Unipolar junction transistors
(d) Junction field – effect transistors

06. The Early-Effect in a bipolar junction transistor is caused by (GATE - 95)

(a) Fast – turn – on
(b) Fast – turn – off
(c) large collector – base reverse bias.
(d) large emitter – base forward bias.
07. MOSFET can be used as a (GATE - 01)
(a) Current controlled capacitor
(b) Voltage controlled capacitor
(c) Current controlled inductor
(d) Voltage controlled inductor

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08. If the transistor in the figure is in saturation then, (GATE - 01)

C
(a) IC is always equal to dcIB.
(b) IC is always equal to -dcIB.
B dc denotes the
(c) IC is greater than or equal to dcI dc
dc current gain
(d) IC is less than dcI B IB

09. For a BJT, the common-base current gain  = 0.98 and the collector base junction
reverse bias saturation current IC0 = 0.6A. This BJT is connected in the common
emitter mode and operated in the active region with a base drive current IB = 20A. The
collector current IC for this mode of operation is
(GATE - 11)
(a) 0.98 mA (b) 0.99 mA
(c) 1.0 mA (d) 1.01 mA

10. An increase in the base recombination of a BJT will increase (GATE - 14)(Set2)

(a) the common emitter dc current gain 

(b) the breakdown voltage BVCE0
(c) the unity-gain cut-off frequency fT
(d) the trans conductance gm

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 TWO Marks Questions
01. The pinch off voltage for a n-channel JFET is 4 V, when VGS = 1 V, the pinch off
occurs for VDS equal to (GATE - 87)
(a) 3 V (b) 5 V (c) 4 V (d) 1 V

02. In an n-channel JFET, VGS is held constant. VDS is less than the breakdown voltage. As
VDS is increased (GATE - 88)
(a) Conducting cross sectional area of the channel ‘S’ and the channel current density
‘J’ both increase
(b) ‘S’ decrease and ‘J’ decrease
(c) ‘S’ decreases and ‘J’ increase
(d) ‘S’ increases and ‘J’ decreases

03. In MOSFET devices the n-channel type is better than the P-channel type in the
following respects (GATE - 88)
(a) it has better noise immunity
(b) it is faster
(c) it is TTL compatible
(d) it has better drive capability

04. In a MOSFET, the polarity of the inversion layer is the same as that of the
(GATE - 89)
(a) charge on the electrode
(b) minority carries in the drain
(c) majority carries in the substrate
(d) majority carries in the source

05. The ‘Pinch off’ voltage of a JFET is 5.0 Volts. Its ‘cut off’ voltage is (GATE - 90)
(a) (5.0)1/2V (b) 2.5 V
(c) 5.0 V (d) (5.0)3/2 V

06. Which of the following effects can be caused by a rise in the temperature?
(GATE - 90)
(a) increase in MOSFET current (IDS)
(b) increase in BJT current (IC)
(c) decrease in MOSFET current (IDS)
(d) decrease in BJT current (IC)

07. In a transistor having finite , the forward bias across the base emitter junction is kept
constant and the reverse bias across the collector base junction is increased. Neglecting
the leakage across the collector base junction and the depletion region generations
current, the base current will _______ (increase/decrease/ remains constant)
(GATE - 92)

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08. An n-channel JFET has a pinch off voltage VP =  5 V, VDS (max) = 20 V, and
gm = 2mA/V. the min ‘ON’ resistance is achieved in the JFET for _______
(GATE - 92)
(a) VGS = - 7 V and VDS = 0 V
(b) VGS = 0 V and VDS = 0 V
(c) VGS = 0 V and VDS = 20 V
(d) VGS = - 7 V and VDS = 20 V

09.  - cut off frequency of a bipolar junction transistor

(GATE - 93)
(a) Increase with the increase in base width
(b) Increase with the increase in emitter width
(c) Increases with the increase in collector width
(d) Increase with the decrease in the base width

10. Match the following. (GATE - 94)

List – I
A. The current gain of a BJT will be increased
B. The current gain of a BJT will be reduced
C. The break-down voltage of a BJT will be reduced
List – II
1. The collector doping concentration is increased
2. The base width is reduced.
3. The emitter doping concentration to base doping concentration ratio is reduced
4. The base doping concentration is increased keeping the ratio of the emitter doping
concentration to base doping concentration constant
5. The collector doping concentration is reduced
11. In a JFET (GATE - 95)
List – I
A. The pinch off voltage decreases
B. The trans conductance increases
C. The transit time of the carriers in the channel is reduced.
List – II
1. The channel doping is reduced.
2. The channel length increases.
3. The conductivity of the channel is increased.
4. The channel length is reduced.
5. The gate area is reduced

12. If a transistor is operating with both of its junctions forward biased, but with the
collector base forward bias greater than the emitter-base forward bias, then it is
operating in the (GATE - 96)

(a) Forward active mode

(b) Reverse saturation mode
(c) Reverse active mode
(d) Forward saturation mode

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13. In a bipolar-transistor at room temperature, if the emitter current is doubled, the voltage
across its base-emitter junction (GATE - 97)

(a) Doubles
(b) Halves
(c) Increases by about 20 mV
(d) Decreases by about 20 mV

14. An n –channel JFET has IDSS = 2 mA and Vp = 4V. It’s transconductance g m (in
mA/V) when applied gate to source voltage VGS = –2V is
(GATE - 99)
(a) 0.25 (b) 0.5 (c) 0.75 (d) 1.0

15. For a BJT CKT shown, assume that the ‘’ of the transistor is very large and V BE = 0.7
V. The mode of operation of the BJT is
(GATE - 06)

10 K

R1
+
(a) Cut-off (b) Saturation + 10 V
(c) Normal active (d) Reverse active
2V R2 
1K


16. Group I lists four different semiconductor device. Match each device in Group I with
its characteristics property in Group II
(GATE - 06)
Group –I
P. BJT
Q. MOS Capacitor
R. LASER diode
S. JFET
Group – II
1. Population inversion
2. Pinch-off Voltage
3. Early Effect
4. Flat-band Voltage

P Q R S
(a) 3 1 4 2
(b) 2 4 3 2
(c) 3 4 1 2
(d) 3 2 1 4

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17. The DC current gain () of a BJT is 50. Assessing that the emitter junction Efficiency is
0.995, the base transport factor is
(GATE - 07)
(a) 0.980 (b) 0.985
(c) 0.990 (d) 0.995

18. Consider the following two statements about the internal conditions in an n-channel
MOSFET operating in the active region.
S1: The inversion charge decreases from source to drain.
S2: The channel potential increases from source drain
which of the following is correct.
(GATE - 09)
(a) Only S2 is true.
(b) Both S1 and S2 are false.
(c) Both S1 & S2 are true, but S2 is not a reason for S1 .
(d) Both S1 & S2 are true, and S2 is a reason for S1 .

19. In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and
collector doping in atomos/cm3 respectively. If the emitter injection efficiency of the
BJT is close to unity which one of the following is true?
(GATE - 10)
(a) N E  N B  N C
(b) N E  N B and N B  N C
(c) N E  N B and N B  N C
(d) N E  N B  N C

Common Data for Q. 20 & 21

The channel resistance of an N-channel JFET shown in the fig. below is 600 when
the full channel thickness (tch) of 10A is available for conduction. The built-in
voltage of the gate P+N junction (Vbi) is –1V. When the gate to source voltage (VGS)
is 0V, the channel is depleted by 1m on each side due to the built-in voltage and
hence the thickness available for conduction is only 8m. (GATE -11)
+
Gate
VGS
P+
Drain
 Source tch N

P+

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20. The channel resistance when VGS = 0V is
(a) 480  (b) 600 
(c) 750  (d) 1000 

21. The channel resistance when VGS = 3V is

(a) 360  (b) 917 
(c) 1000  (d) 3000 

22. Consider two BJT’s biased at the same collector current with area A1=0.2 m  0.2m
and A2= 300m  300m. Assuming that all other device parameters are identical,
kT/q=26mV,the intrinsic carrier concentration is 11010cm-3, and q=1.610-19C, the
difference between the base–emitter voltages (in mV) of the two BJT ’s (i.e. VBE1 –
VBE2) _______. (GATE - 14)(Set4)

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 TEN Marks Questions

01. It is required to use a JFET of fig. below as a linear resistor. The parameters of the
JFET are as follows: W = 100 m, L = 10 m, a = 2.5 m. the doping in the n-layer is
ND = 1016/cm3 and the electron mobility is 1500cm2/V-sec. the depletion layer width of
each junction due to the built in potential is .25 m. the two P+ gate regions are
connected together externally. The resistances of the regions outside the gate are
negligible, determine the minimum value of the linear resistor which can be realized
using this JFET without forward biasing the gate junctions.
(GATE - 91)

P  gate
a n-layer
Drain
Source P gate
L

02. The reverse saturation current of the collector base junction (ICBO) of a BJT is found to
be 10 nA at lower collector voltages. The low voltage current amplification factor () is
0.98. Find reverse saturation current with base open (ICEO)

ADDITIONAL QUESTIONS

One Mark Questions

11. The quiescent collector current IC, of a transistor is increased by changing the biasing
resistance. As a result.
(a) gm will not be affected
(b) gm will decrease
(c) gm will increase
(d) gm will increase (or) decrease depending upon bias stability.

12. The built in potential of the gate junction of a n-channel JFET is 0.5 volts. The drain
current saturates at VGS = 4 volts. When VGS = 0. The pinch off voltage is

13. An channel JFET has IDSS = 1mA, Vp   5V . Its maximum transconductance is

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 Two Marks Questions

22. The cross section of a JFET is shown in the following fig. Let V G = – 2V and let Vp be
the initial pinch-off voltage. If the width ‘w’ is doubled (with other geometrical
parameters and doping levels remaining the same), then the ratio between mutual
transconductance of the initial and modified JFET is

VG
Gate

p+

Source n Drain

p+

VG
 2 
 1 
 Vp 
(a) 4 (b)  
1 1 V 
 2
p

 

  2    2 
 1    1 
 V    Vp 
 p  
(c)   (d)
  1   1 
1   1 
  2V   2 Vp 
  p 
 

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23. A given NPN transistor has normal and inverse alpha values of 0.96 and 0.15
respectively. Its parasitic collector bulk resistance is 0 . The transistor is connected in
a circuit shown in fig. find the resistance RB required to bring the transistor to the
threshold of saturation (VCB = 0), assuming the VBE = 0.7 V.

+5V

RB RL = 50

+
0.7
+

0.7


24. Emitter, base and collector regions, where in the doping concentrations are 1019 /cm3,
1017/cm3 and 1015/cm3 respectively. The minority carrier diffusion lengths in the emitter
and the base regions are 5 microns and 100 microns respectively. Assuming 10 W level
injection conditions and using the level of the junction, calculate the collector current
density and the base current density due to base recombination. [Suitable
approximations may be made if required]. In all the regions of the transistor

Dp = 8 cm2/sec
Dn = 16 cm2/sec
ni = 1.5  1010 / cm3 P N P
NA =1019/cm3 NA =1017/cm3 N =1015/cm3
kT/q = 26 mV A
Ln =5 microns Ln=100mns  200 m
q = 1.6  1019 C  10 m  5 m

+  + 
0.78V 10V

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