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Assignment 4
Assignment #4.
5.1 (1.0 %), 5.2 (0.6 %), 5.3 (1.0 %), 5.5 (0.4 %), 5.8 (1.0 %), 5.9 (0.4 %), 5.10
(0.6 %)
Solution.
a)
hc
E=
λ
6.626 × 10 −34 × 3 × 108
E= −9
= 3.313 × 10 −19 J or 2.07 eV
600 × 10
b)
I ph P0
# of EHP generated per second = # of incident photons per second = =
e hν
where Iph/e is # of electrons per second and P₀/hν is # photons per second
P0 (2 ×10−3 × 5 ×10−2 )W
Therefore, # of EHP generated per second = = −19
= 3.02 ×1014 s −1
hν (3.313 ×10 ) J
ELEC425/1-2012 2
Assignment 4
c)
hc 1.24
λ= = ≈ 0.873 µm this is infrared light and it is not in visible region.
E 1.42
d)
The cut-off wavelength of GaAs is shorter (873 nm) than cut-off wavelength of Si
(1.107 μm); thus, Si photodetector will be sensitive to the radiation from a GaAs
laser. In other words, the bandgap of the silicon is smaller than it is in GaAs and
emitted photons from laser (GaAs) will have higher energy than silicon’s energy
bandgap. Consequently, photons will result in generation of EHP in silicon
photodetector.
Ge In0.7Ga0.3As0.64P0.36
1×107
In0.53Ga0.47As
Si
1×106
GaAs
α (m-1)
InP
1×105
a-Si:H
1×104
1×103
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Wavelength (µm)
Absorption coefficient (α) vs. wavelength (λ) for various semiconductors
(Data selectively collected and combined from various sources.)
Figure 5.3. S. O. Kasap “Optoelectronics and Photonics”
Solution.
a)
let I₀ is incoming radiation which is represented by energy flowing per unit area
per second and I₀[1-exp(-αd)] is the absorbed intensity.
Photon flux is the number of photons arriving per unit area per unit second,
P₀/(hνArea)=I₀/hν.
I 0 [1 − exp(− αd )]
So, absorbed photon flux per unit area is .
hν
I 0 [1 − exp(− αd )]
# of photons absorbed per volume =
dhν
ELEC425/1-2012 4
Assignment 4
b)
from Fig. 5.3 α ≈ 6.0 × 10⁵ m⁻¹ is the absorption coefficient for Ge at 1.5 μm
incident radiation
I (d ) = I 0 exp(− αd ) = 0.1I 0
exp(− αd ) = 0.1
ln 0.1
d =−
α
ln 0.1
d =− ≈ 3.84 µm
6.0 × 105
from Fig. 5.3 α ≈ 7.5 × 10⁵ m⁻¹ is the absorption coefficient for In0.53Ga0.47As at 1.5
μm incident radiation
I (d ) = I 0 exp(− αd ) = 0.1I 0
exp(− αd ) = 0.1
ln 0.1
d =−
α
ln 0.1
d =− ≈ 3.07 µm
7.5 × 105
c)
I ph P I / area I 0 (1 − exp(− αd ))
= = =
e hν hν hν × area
I ph e × I 0 [1 − exp(− αd )] e × 0.9 I 0 × λ
J ph = = =
area hν hc
−19 −6
1.6 × 10 × 100 × 0.9 × 1.5 × 10
J ph = −34 8
= 108.663 A/m 2 or 10.866 A/cm 2
6.626 × 10 × 3 × 10
The reflection of the light from the surface of the photodetector is neglected.
Assumed that the anti-reflective coating has efficiency 100%.
5.3. Ge Photodiode.
reverse bias of 10 V when the dark current is 0.3 μA and the junction capacitance
is 4 pF. The rise time of the photodiode is 0.5 ns.
Solution.
a)
Rhν hcR
η EQ = =
e eλ
b) Iph = Id = 0.3 μA
c)
The energy band gap is increasing with the decreasing of the temperature;
consequently, the cut-off wavelength is decreasing as temperature is decreasing.
So, the higher photon energy is needed to initiate photon absorption. For instance,
the curves representing the relationship between absorption coefficient and
wavelength demonstrated in Figure 5.3 will be shifted to the left, when temperature
is decreased. Hence, the same absorption coefficient for a given semiconductor
will be at lower wavelength and at higher photon energy when temperature is
decreased. The change in the absorption coefficient attributable to the variations in
temperature means that the optical power absorbed in the depletion region and the
quantum efficiency vary with temperature. The peak of the responsivity in Figure
5.20 will move to the left, to the lower values of the wavelength, with decreasing
ELEC425/1-2012 7
Assignment 4
temperature, since the amount of the optical power absorbed in depletion region
increases with the decreasing in temperature value.
d)
e)
Responsivity(A/W)
1
0.8
0.6
0.4
0.2
0
800 1000 1200 1400 1600 1800
Wavelength(nm)
Solution.
a)
I ph
R= = 0.87 from Figure 5.22
P0
2 × I dark 2 × 5 × 10 −9
I ph
P0 = = = ≈ 11.49 nW
R R 0.87
From the dimensional identities: [Iph] = A=C/s, [P₀] = W = J/s, [R] = A/W = C/J
b)
I ph
P0 = = 11.49 nW from part (a)
R
where Ne and Nh are the overall electron and hole concentration in the sample at
time t. Assume for convenience that the cross sectional area A = 1 (derivations
below are not affected as we are interested in the photocurrent densities).
a) Sketch the hole distribution at a time t where τh > t > 0 and τh = hole drift
time = W/vdh.
b) The electron concentration distribution n(x) at time t corresponds to that at t
= 0 shifted by vdet. Thus the total electrons in W is proportional to
integrating this distribution n(x) from A at x = vdet to B at x = W.
ELEC425/1-2012 10
Assignment 4
and
Total number electrons at time t
Ne =
Volume
Then
1 W n0 t
N e (t ) =
W ∫
vdet
n0 exp[− α ( x − vdet )]dx =
W
1 − exp − α W
τ
1 −
e
where Ne(0) is the initial overall electron concentration at time t = 0, that is,
1 W n0
N e (0 ) =
W ∫ 0
n0 exp(− αx )dx =
Wα
[1 − exp(− αW )]
We note that n₀ depends on the intensity I of the light pulse so that n₀ ∝ I.
Show that for holes,
n0 exp(− αW ) t
N h (t ) = exp αW 1 − − 1
Wα τ h
c) Given W = 40 μm, α = 5 × 10⁴ m⁻¹, vde = 10⁵ m/s, vdh = 0.8 × 10⁵ m/s, n₀ =
10¹³ cm⁻³, calculate the electron and hole transit times, sketch the
photocurrent densities je(t) and jh(t) and hence jph(t) as a function of time,
and calculate the initial photocurrent. What is your conclusion?
ELEC425/1-2012 11
Assignment 4
v de
x
A B
W
hυ > E g E
e–
h+
iph R
Vr
An infinitesimally short light pulse is absorbed throughout the
depletion layer and creates an EHP concentration that decays
exponentially
© 1999 S.O. Kasap, Optoelectronics (Prentice Hall)
Solution.
a)
b)
1 W −vdht n0
N h (t ) =
W
0 ∫ n0 exp[− α ( x + vdht )]dx =
Wα
[exp(− αvdht ) − exp(− αW )]
n exp(− αW ) t
N h (t ) = 0 exp αW 1 − − 1
Wα τ h
c)
40 × 10 −6
τ e = W / vde = = 400 ps
105
40 × 10 −6
τ h = W / vdh = = 500 ps
0.8 × 105
je (0 ) = eN e (0 )vde = 1.6 × 10 −19 × 4.3 × 1018 × 105 ≈ 6.9 × 10 4 A/m 2 or 6.9 A/cm 2 or 69 mA/mm2
jh (0 ) = eN h (0 )vdh = 1.6 × 10 −19 × 4.3 × 1018 × 0.8 × 105 ≈ 5.5 × 10 4 A/m 2 or 5.5 A/cm 2 or 55 mA/mm2
the total initial photocurrent is je(0)+jh(0) = 69+55= 124 mA/mm²
en0vde t
je (t ) = eN e (t )vde = 1 − exp − αW 1 − for t < τ e
Wα τ e
en0vdh exp(− αW ) t
jh (t ) = eN h (t )vdh = exp αW 1 − − 1 for t < τ h
Wα τ h
The response is determined by the slowest transient time. There is a kink in the
photocurrent waveform when all the electrons have been swept out at τe = 400 ns.
ELEC425/1-2012 13
Assignment 4
x 10
4 Photocurrent density
14
12
10
Photocurrent density (A/m2)
j (t)
t
8
j (t)
e Total photocurrent density
j (t) electrons
4 h
holes
2
0
0 1 2 3 4 5 6
Time (sec) x 10
-10
τe τh
Solution.
I ph 5 ×10−9
Power absorbed by photodiode = P0 = = = 6.173 × 10−9 W
R 0.81
ELEC425/1-2012 14
Assignment 4
2 × 10 −3
The attenuation loss is 10 log10 (Pin / Pout ) = 10 log10 = 55.105 dB
−9
6.173 × 10
a) What are the transit times, te and th, of an electron and a hole across L? What
is the photoconductive gain?
b) It should be apparent that as electrons are much faster than holes, a
photogenerated electron leaves the photoconductor very quickly. This leaves
behind a drifting hole and therefore a positive charge in the semiconductor.
Secondary (i.e. additional electrons) then flow into the photoconductor to
maintain neutrality in the sample and the current contributes to flow. These
events will continue until the hole has disappeared by recombination, which
takes on average a time τ. Thus more charges flow through the contact per
unit time than charges actually photogenerated per unit time. What will
happen if the contacts are not ohmic, i.e. they are not injecting?
c) What can you say about the product ∆σ and the speed of response which is
proportional to 1/τ.
Solution.
a)
from given length and applied voltage E=V/L=10 V/100 μm = 10⁵ V/m
from the inside cover of the textbook: µe = 1350 cm 2V −1s −1 , µ h = 450 cm 2V −1s −1
L 100 × 10 −6
te = = = 7.41 ns
µ e E 1350 × 10−4 × 105
L 100 × 10 −6
th = = = 22.22 ns
µ h E 450 × 10−4 × 105
Another way to solve for transit times of an electron and hole across L in Si is by
using Figure 5.7: ve =1.3 × 10⁴ m/s at E = 10⁵ V/m and vh ≈ 4.5 × 10³ m/s
L 100 × 10 −4
te = = = 7.69 ns
ve 1.3 × 10 4
L 100 × 10 − 4
th = = = 22.22 ns
vh 4.5 × 103
Photoconductive gain is
Rate of electron flow in external circuit τ (µ e + µ h )E
G= =
Rate of electron generation by light absorption L
1× 10 −6 (1350 + 450 ) × 10 −4 × 105
G= = 180
100 × 10 −6
b) if the contacts are not ohmic, secondary electrons cannot flow into the
photoconductor to maintain neutrality. So, only the photogenerated charges can
flow through the external circuit; no excess charge can flow and we will not get
photoconductive gain. If the contacts cannot inject carriers, then there will be no
photocurrent gain, G = 1.