the values fm equation 22.5 In above fp tleo,*alo toy Ip = (4+ eo, +o, ae (e973) can be condeed_ a2 tl reve [Sse Ret of neon fy. Tis cet can Be nok bye Ton Then above equation cn be 026) P el 27) Fea) a stare fp 6 the revere leskge caren of he ac Baset uncon fp And ee en TOOT gu o nd ys common Se Se a of ny who var aioe Shan (fay) & very sll and esha 1. Hence enS bedi came se given by enon 227 {2% soul Slowed olage appl aos Gites Inaeuer De values of and 0 ako Pee “Ven (oy eq) nds. uty he rpproaches nity 2 en By equation 227. At tare irl rogeeraton sas and be fhyiter goo Ine forward conduction (ON) ose Toe came tuvagh te tyeitor i oly Timed by te eterna fad once the thyistor goes ito concn the two frsitor model is wo more appale. Here note that the intemal regeneration takes place in the thyriter doe to avaandie brakdown of reve biaed jnelon Jy dos not take place when hyo is revewe Based. When the cient through the thystor falls below holding cent the forward Bocing state regained, Ten and tof transistors are ls reduced to small ats Wen the gate curent I, i applied, then equation 227 il be writen 228) Thus the forward leakage current (Ip) is increased die to gate drive (I. Ths leakage cument flows through junction Jp and its avalanche breskedown ‘occurs at lower forward voltage. Thus wih the gate drive, the SCR is tured on at voltages less than Vgo: Hence gate becomes convenient way of teggering the thyristor. Once the thyristor is tumed-an, the gate has no control over its conduction. t || 1. Dawe err moll of riser |, Define hing cavent and ching current f 4 Ealain thes raster mel of rita and eam exeson fr ana caren ier of tent apiiation flr and lenge core 6 Dra the tye transistor model of Uyritor and near the eclatonhip between gate cent Che anode curent Before the thyristor comes io scoductonasing device expeson, expla baw nama ge current can rigger the device into conduction 7. Explain te foo transistor model of SCR and alg * Fen, * cao, a) mame | tj ing ting ren ling current i) Ft rating. Derive expression for anode cwent using towtrasistor model im case \ gs Prise none] 9, Espa th Vl chances of SCR by clay citing diferent aes on characteristics. Also cals ier makes of operation. erie the formal. Ly | 10. With tuo transistor analogy ofa thyristor obtain the equation for anode cute. d derive am expression forthe anode current interms of the common base current cin a and 01 of TRETETALIINE | | Leenin the forward bodecathode voltage changes rapidly, leakage RE thought the deer incene due to vitor, The leads 0 turn of the internal capa ‘of Gate Drive J Mont coment 10 apply gate dive Yo tur om sm Gate drive can be eadly generated by conta ‘reais tip gate can be controle as required by simple [232] tum-on Dynamic Characterstes Cig. 231 shows the carent and voltage of the Teeter during turn-on The gate pols is applied wrreo. Dating the dy ime (I) the anode cee. thas very slowly and ows only near the narow Tepion of the gate, Oberve that anode to cathode ‘Hoes oot reduce during ty. 1k remains to the foward blocking value. During the rise time (>) fhe anode current increases rapidly and anode Yo ‘Binode voltage falls reid. The high voltage and SMivene we present ic he hyricr. Hence IRE ispation takes place in the thyristor. Fi. 234 Dynamic charctrise of tyre dig ron _ T Tome ARI ie at ne‘ig. 232 Dyname characteris of tystor ding trot Tis power dlsiption is ele svitching oss of | he visor Te cent stats spreading in the reining area ofthe tyes. During the rel | tine (i), the conducon spreads ver he complete | cosesttion ofthe Uyrisor. The anede curent | ‘a of asim van Ant he anode 2 | Catoe vtige fas Fes vase Ges than | 2) The disipation nthe histori also reduced. | Tie tra on ie (lq) of eyo i given as | total of yt, and fy. Ths, | leg eat Hy | ‘The tum on ine can be defined 25 The ten tne of he hyn i defied asthe ne from itton of gee Arie toe time whe anode ‘arent esha ‘The turnan tine of the thyristors Is about 1 to Smicosconds. The tron tine can be effectively reduced by applying higher values of gate curents, Because of high gate currents, more electron-holes | are injected near junction Jy. Hence avalanche | Ieak-down of Jp takes place fst. Therefore anode cent ries fast Thus elfeive tumvon time is ‘ued. To tumon the thyristor, the gate pulse is thus sufcent Kelle i 2.33 Thytistor Tumof . ie Know that yee can be tamed when ee" ey tw ong cue THe ‘arte done by two methods : i) Natural “Sontation and i Forced commutation. 2) Natural commuation «In thie type of tural the supply ologe becomes 2210 or negative, ence this is reverse based. Therefore iis fumed 4 Fored commutation : When the supply voltage is DG, then extemal commutation component are sed to tuff the tystor. The Commutation components apply reverse bias across the thyrstor temporarily or pass impulse i negative coment, Therefore thyristor tums-of 234 | Tum-off Dynamic Characteristics ‘Fig. 232 shows the thyristor current and voltage during turn-off. Te thyristors are not tured off by gate, They need extemal circuit for turn-off, These circuits are called commutation circuits. These commutation cirats has to held negative voltage across the thyristor during tum-off period, The yrstor i said to ke ‘umed-off when it regains forward blocking capability after forward. conduction. In the above figure observe that anode TEOWNCALPUSLEATONS An at ron —