Fuji Discrete Package IGBT n Outline Drawing

n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Minimized Internal Stray Inductance

n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply

n Maximum Ratings and Characteristics n Equivalent Circuit

• Absolute Maximum Ratings ( Tc=25°C)

Items Symbols Ratings Units
Collector-Emitter Voltage VCES 600 V
Gate -Emitter Voltage VGES ± 20 V
DC Tc= 25°C IC 25 24
Collector Current DC Tc=80°C IC 80 15 A
1ms Tc= 25°C IC PULSE 96
IGBT Max. Power Dissipation PC 90 W
Operating Temperature Tj +150 °C
Storage Temperature Tstg -40 ∼ +150 °C
Mounting Screw Torque 40 Nm

• Electrical Characteristics ( at Tj=25°C )

Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current ICES VGE=0V VCE=600V 1.0 mA
Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 20 µA
Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=15mA 5.5 8.5
V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V IC=15A 3.0
Input capacitance Cies VGE=0V 1000
Output capacitance Coes VCE=10V 200 pF
Reverse Transfer capacitance Cres f=1MHz 40
tON VCC=300V 1.2
Turn-on Time
tr IC=15A 0.6 µs
tOFF VGE=±15V 1.0
Turn-off Time
Switching Time tf RG=160Ω 0.35
tON VCC=300V 0.16
Turn-on Time
tr IC=15A 0.11
µs
tOFF VGE=+15V 0.30
Turn-off Time
tf RG=16Ω 0.35

• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
Thermal Resistance Rth(j-c) 1.04 °C/W
 Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C T j= 1 2 5 ° C
60 60

V GE = 2 0 V V GE = 2 0 V
15V
50 50
[A]

[A]
40 40 15V
C

C
Collector Current : I

Collector Current : I
12V
30 30 12V

20 20

10V
10V
10 10

8V 8V
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage : V CE [V]

Collector-Emitter Voltage vs. Gate-Emitter Voltage Collector-Emitter Voltage vs. Gate-Emitter Voltage
T j= 2 5 ° C T j= 1 2 5 ° C
12 12
[V]

[V]

10 10
CE

CE

8 8
Collector-Emitter Voltage : V

Collector-Emitter Voltage : V

6 6

4 4
IC = IC =

30A 30A
2 15A 2 15A
7.5A 7.5A

0 0
0 5 10 15 20 25 0 5 10 15 20 25

Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V]

Switching Time vs. Collector Current Switching Time vs. Collector Current
V CC = 3 0 0 V , R G= 1 6 Ω , V GE = ± 1 5 V , T j= 2 5 ° C V CC = 3 0 0 V , R G = 1 6 Ω , V GE = ± 1 5 V , T j= 1 2 5 ° C
1000 1000

t off
, t r, t off , t f [nsec]

, t r, t off , t f [nsec]

tf

t off
t on t on
100 100
on
on

tf
Switching Time : t

Switching Time : t

tr
tr

10 10
0 5 10 15 20 25 30 0 5 10 15 20 25 30

Collector Current : I C [A] Collector Current : I C [A]

 Switching Time vs. R G Switching Time vs. R G
V CC =300V, I C = 1 5 A , V GE = ± 1 5 V , T j= 2 5 ° C V CC =300V, I C = 1 5 A , V GE = ± 1 5 V , T j= 1 2 5 ° C
, t r, t off , t f [nsec]

, t r, t off , t f [nsec]
1000 1000 t off
t on t on
t off tf
on

on
tr tr
Switching Time : t

Switching Time : t
tf
100 100

10 10
0 100 0 100

Gate Resistance : R G [ Ω ] Gate Resistance : R G [ Ω ]

Capacitance vs. Collector-Emitter Voltage Dynamic Input Characteristics

T j= 2 5 ° C T j= 2 5 ° C
500 25

V C C =200V, 300V, 400V

, C res , C ies [pF]

[V]

C ies 400 20

[V]
1000
CE

GE
Collector-Emitter Voltage : V

Gate-Emitter Voltage : V
300 15
oes

C oes
Capacitance : C

100
200 10

C res 100 5

10

0 0
0 5 10 15 20 25 30 35 0 10 20 30 40 50 60 70 80 90
G a t e C h a r g e : Q G [nQ]

Reverse Recovery Time vs. Forward Current Reverse Recovery Current vs. Forward Current
-di -di
V R= 2 0 0 V , / dt= 1 0 0 A / µ s e c V R= 2 0 0 V , / dt = 1 0 0 A / µ s e c
200 8
[nsec]

[A]

125°C
150 6
rr
rr

Reverse Recovery Current : I

125°C
Reverse Recovery Time : t

100 4

25°C 25°C

50 2

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

Forward Current : I F [A] Forward Current : I F [A]

 Reverse Biased Safe Operating Area Typical Short Circuit Capability
+ V GE = 1 5 V , - V GE < 15V, T j<125°C, R G >1 6 Ω V CC = 4 0 0 V , R G = 1 6 Ω , T j= 1 2 5 ° C
35 250 100

30
200 80
I SC

[A]

[µs]
25
[A]

SC
t SC

SC
C

Short Circuit Current : I

150 60
20

Short Circuit Time : t

Collector Current : I

15
100 40

10

50 20
5

0 0 0
0 100 200 300 400 500 600 700 5 10 15 20 25
Gate Voltage : V GE [V]
Collector-Emitter Voltage : V CE [V]

-di
Reverse Recovery Characteristics vs. / dt
Forward Voltage vs. Forward Current
I F = 1 5 A , T j= 1 2 5 ° C
60 200 20

T j= 1 2 5 ° C 2 5 ° C
50
[nsec]

[A]
150 15

rr
[A]

rr

40

Reverse Recovery Current : I

Reverse Recovery Time : t
F
Forward Current : I

I rr
30 100 10

20

50 5
t rr
10

0 0 0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0 100 200 300 400 500 600
-di
Forward Voltage : V F [V] / dt [A/µsec]

Transient Thermal Resistance

Thermal Resistance : Rth(j-c) [°C/W]

1
10

0
10 IGBT

-1
10

-2
10
-4 -3 -2 -1 0
10 10 10 10 10

Pulse Width : P W [sec]

P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com