Q1.

Why low power has become an important issue in the

present day VLSI circuit realization?
Ans: In deep submicron technology the power has become as one of the most
important issue because of:

Increasing transistor count : the number of transistors is getting doubled in

every 18 months based on moore’s Law

Higher speed of operation : the power dissipation is proportional to the clock

frequency.

Greater device leakage currents : In nanometer technology the leakage

component becomes a significant percentage of the total power and the leakage
current increases at a faster than dynamic power in technology generations.

Q2. How reliability of a VLSI circuit is related to its power

dissipation?
Ans: It has been observed that every 10ºC rise in temperature roughly doubles
the failure rate because various failure mechanisms such as silicon interconnect
fatigue, electromigration diffusion, junction diffusion and thermal runaway starts
occurring as temperature increases.

Q3. Distinguish between energy and power dissipation of VLSI

circuits. Which one is more important for portable systems?
Ans: Power (P) is the power dissipation in Watts at different instances of time. On
the other hand energy (E) refers to the energy consumed in Joule over a period
of time (E = P*t).

Now a days power dissipation is more important for portable devices. For
portable device low power design is very important issue.
Q4:Make comparison between LSI,VLSI,ULSI?

Q5: Define moore’s law

sheet of sir page 1
Q6: what do you know about SSI LSI VLSI?
sheet of sir page 2
Q7: what are the challenges in VLSI design?
The central challenge of VLSI design is making good trade-offs between
performance and power for a particular application.
 1. Conquest over Complexity
2. Efficient Design process and manufacture
3. High Speed Design .
4. Low Power Design
5. Handling mixed Digital, Analog and RF circuits
6. Efficient Test and Verification

Q8: Define VLSI? Write down the advantages of VLSI design?

Q12: Compare between the Iv characteristics of enhancement

type and depletion type mos
Q10. What is the threshold voltage of a MOS transistor? How
it varies with the body bias?
Sheet of sir 8 page

Q12.Draw the ideal characteristics of a CMOS inverter and

compare it with the actual characteristics.
Ans: The ideal and actual characteristics are given below. In the ideal
characteristics, the output voltage is Vdd for input voltage from o to Vdd/2 and 0
for input voltage from Vdd/2 to Vdd. This is not true in case of the actual
characteristics as shown below.

Q 11: Draw the basic layer structure of depletion type MOS