48 Electronics

6. A 2V battery is connected across the points A and

B as shown in the figure given below. Assuming
that the resistance of each diode is zero in forward
bias and infinity in reverse bias, the current
supplied by the battery when its positive terminal
is connected to A is [UPSEAT 2002]
1. A silicon speciman is made into a P-type semi- 10 
conductor by dopping, on an average, one Indium
atom per 5 107 silicon atoms. If the number (a) 0.2 A
10 
density of atoms in the silicon specimen is (b) 0.4 A
5  1028atoms/ m3 then the number of acceptor
atoms in silicon per cubic centimetre will be (c) Zero
[MP PMT 1993, 2003] (d) 0.1 A A B
30
(a) 2.5  10 atoms/ cm 3 (b) 7. In the circuit, if the forward voltage drop for the
1.0  1013atoms/ cm3 diode is 0.5V, the current will be
[UPSEAT 2003]
(c) 1.0  1015atoms/ cm3 (d) 0.5V
36 3
2.5  10 atoms/ cm (a) 3.4 mA
2. The probability of electrons to be found in the (b) 2 mA
conduction band of an intrinsic semiconductor at a 8V 2.2K
(c) 2.5 mA
finite temperature
[IIT-JEE 1995; DPMT 2004] (d) 3 mA
(a) Decreases exponentially with increasing band 8. A P-type semiconductor has acceptor levels 57
gap meV above the valence band. The maximum
(b) Increases exponentially with increasing band wavelength of light required to create a hole is
gap (Planck’s constant h = 6.6  1034 J-s)
(c) Decreases with increasing temperature [MP PET 1995]
(d) Is independent of the temperature and the (a) 57 Å (b) 57 103 Å
band gap
(c) 217100 Å (d) 11.61 1033 Å
3. The typical ionisation energy of a donor in silicon
is 9. Current in the circuit will be
[IIT-JEE 1992] [CBSE PMT 2001]

(a) 10.0 eV (b) 1.0 eV 5

(a) A
40 20 
(c) 0.1eV (d) 0.001eV
5
4. In PN-junction diode the reverse saturation current (b) A 30 
50
is 105 amp at 27C. The forward current for a
5 i
voltage of 0.2volt is [MP PMT 1993] (c) A
10 20  5V
(a) 2037.6  103 amp(b) 203.76 103 amp
5
(c) 20.376 103 amp(d) 2.0376 103 amp (d) A
20
7.62)  2038.6, K  1.4  1023 J / K ]
[exp( 10. The diode used in the circuit shown in the figure
has a constant voltage drop of 0.5 V at all currents
5. When a potential difference is applied across, the
current passing through [IIT-JEE 1999] and a maximum power rating of 100 milliwatts.
What should be the value of the resistor R,
(a) An insulator at 0K is zero connected in series with the diode for obtaining
(b) A semiconductor at 0K is zero maximum current [CBSE PMT 1997]

R 0.5 V
(c) A metal at 0K is finite
(a) 1.5 
(d) A P-N diode at 300K is finite, if it is reverse
biased (b) 5 

(c) 6.67 
1.5 V
 49 Electronics
(d) 200 
11. For a transistor amplifier in common emitter
configuration for load impedance of 1 k (hfe = 50
and hoe = 25 A/V) the current gain is
[AIEEE 2004]

(a) – 5.2 (b) – 15.7 (a) 4.3 k (b) 860 k

(c) – 24.8 (d) – 48.78 (c) 4.3  (d) 860 
16. In the circuit given below, V(t) is the sinusoidal
12. In the following common emitter configuration an
voltage source, voltage drop VAB(t) across the
NPN transistor with current gain  = 100 is used. resistance R is
The output voltage of the amplifier will be D1 D2 [IIT 1993]
[AIIMS 2003]

R VAB
(a) 10 mV R2=150
R1=100 
(b) 0.1 V 10K 
1K V(t
1mV Vout )
(c) 1.0 V

(d) 10 V (a) Is half wave rectified

(b) Is full wave rectified
13. In semiconductor the concentrations of electrons
(c) Has the same peak value in the positive and
and holes are 8  1018/m3 and 5  1018/m
negative half cycles
respectively. If the mobilities of electrons and hole
(d) Has different peak values during positive and
are 2.3 m2/volt-sec and 0.01 m2/volt-sec
negative half cycle
respectively, then semiconductor is
17. The peak voltage in the output of a half-wave
(a) N-type and its resistivity is 0.34 ohm-metre diode rectifier fed with a sinusoidal signal without
(b) P-type and its resistivity is 0.034 ohm-metre filter is 10 V. The dc component of the output
voltage is [CBSE PMT 2004]
(c) N-type and its resistivity is 0.034 ohm-metre
(a) 10 / 2V (b) 10/ V
(d) P-type and its resistivity is 3.40 ohm-metre
14. A sinusoidal voltage of peak value 200 volt is (c) 10 V (d) 20/ V
connected to a diode and resistor R in the circuit 18. A transistor is used as an amplifier in CB mode
shown so that half wave rectification occurs. If the with a load resistance of 5 k  the current gain of
forward resistance of the diode is negligible
amplifier is 0.98 and the input resistance is 70 ,
compared to R the rms voltage (in volt) across R is
the voltage gain and power gain respectively are
approximately
[Pb. PET 2003]

(a) 70, 68.6 (b) 80, 75.6

E0= 200 Volt R
(c) 60, 66.6 (d) 90, 96.6
19. The Bohr radius of the fifth electron of phosphorus
(atomic number = 15) acting as dopant in silicon
(a) 200 (b) 100 (relative dielectric constant = 12) is
200 (a) 10.6 Å (b) 0.53 Å
(c) (d) 280
2 (c) 21.2 Å (d) None of these
15. The junction diode in the following circuit requires 20. In the following circuits PN-junction diodes D1, D2
a minimum current of 1 mA to be above the knee and D3 are ideal for the following potential of A
point (0.7 V) of its I-V characteristic curve. The
and B, the correct increasing order of resistance
voltage across the diode is independent of current
above the knee point. If VB = 5 V, then the between A and B willDbe
1 R
maximum value of R so that the voltage is above
the knee point, will be
D2 R
R 0.7 V

D3 R
R R
4 4

A B
VB
 Electronics 50

m2
0.14 respectively, then the current
volt sec
flowing through the plate will be
(a) 0.25 A (b) 0.45 A
(c) 0.56 A (d) 0.64 A
(i) – 10 V, – 5V (ii) – 5V, – 10 V
25. The contribution in the total current flowing
(iii) – 4V, – 12V through a semiconductor due to electrons and
(a) (i) < (ii) < (iii) (b) (iii) < (ii) < (i) 3 1
holes are and respectively. If the drift
(c) (ii) = (iii) < (i) (d) (i) = (iii) < (ii) 4 4

21. The circuit shown in following figure contains two 5

velocity of electrons is times that of holes at
diode D1 and D2 each with a forward resistance of 2
50 ohms and with infinite backward resistance. If this temperature, then the ratio of concentration
the battery voltage is 6 V, the current through the of electrons and holes is
100 ohm resistance (in amperes) is (a) 6 : 5 (b) 5 : 6
[IIT-JEE 1997] (c) 3 : 2 (d) 2 : 3
150
26. Ge and Si diodes conduct at 0.3 V and 0.7 V
D1 respectively. In the following figure if Ge diode
50
connection are reversed, the valve of V0 changes
D2 by [Based on Roorkee
100
2000]
6V
Ge

(a) Zero (b) 0.02 V0

(c) 0.03 (d) 0.036
12 V
Si 5 k
22. Find VAB [RPMT 2000]

(a) 10 V
10
(b) 20 V 30V (a) 0.2 V (b) 0.4 V
(c) 30 V VAB 10 (c) 0.6 V (d) 0.8 V
10
(d) None of these 27. In the circuit shown in figure the maximum output
voltage V0 is
23. A diode is connected to 220 V (rms) ac in series +
with a capacitor as shown in figure. The voltage Vi D1 D2
across the capacitor is 10 V
2k
T
(a) 220 V 0 + –
T/2 t V0
2k 2k
(b) 110 V
220 V C –
(c) 311.1 V ac
(a) 0 V (b) 5 V
220
(d) V 5
2 (c) 10 V (d) V
2
24. A potential difference of 2V is applied between the 28. In the following circuit find I1 and I2
opposite faces of a Ge crystal plate of area 1 cm2
2k
and thickness 0.5 mm. If the concentration of (a) 0, 0 i2
electrons in Ge is 2  1019/m3 and mobilities of
(b) 5 mA, 5 mA
m2 (c) 5 mA, 0
10 V 14k 12k
electrons and holes are 0.36 and

volt sec i1
(d) 0, 5 mA
 51 Electronics
29. For the transistor circuit shown below, if  = 100, 35. The diagram of a logic circuit is given below. The
voltage drop between emitter and base is 0.7 V output F of the circuit is represented by
then value of VCE will be (a) W.(X  Y ) W
X
100
 (b) W  (X  Y )
C F
(a) 10 V 8.6 k
VCE
18 V (c) W  (X  Y ) W
(b) 5 V B Y
E
(c) 13 V (d) W  (X  Y )

(d) 0 V 5V 36. The plate current ip in a triode valve is given

30. 10
In NPN transistor, 10 electrons enters in emitter i p  K (Vp   Vg )3 / 2 where ip is in milliampere
region in 10–6 sec. If 2% electrons are lost in base
and Vp and Vg are in volt. If rp = 104 ohm, and
region then collector current and current
amplification factor () respectively are gm  5  103 mho, then for ip  8 mA and
(a) 1.57 mA, 49 (b) 1.92 mA, 70 Vp  300volt, what is the value of K and grid
(c) 2 mA, 25 (d) 2.25 mA, 100 cut off voltage [Roorkee 1992]

31. The following configuration of gate is equivalent to (a) – 6V, (30) 3/2
(b)  6V, (1 / 30)3 / 2
[AMU 1999] (c) + 6V, (30)3/2 (d) + 6V, (1/30)3/2
(a) NAND OR
A 37. The linear portions of the characteristic curves of a
B AND triode valve give the following readings
(b) XOR G1 Y
[Roorkee 1985]
NAND
(c) OR G3 0 –2 –4 –6
Vg (volt)
(d) None of these G2
I p(mA) for 15 12.5 10 7.5
32. Figure gives a system of logic gates. From the
Vp  150 volts
study of truth table it can be found that to produce
a high output (1) at R, we must have I p(mA) for 10 7.5 5 2.5

(a) X = 0, Y = 1 X P Vp  120 volts

(b) X = 1, Y = 1 Y R The plate resistance is
(c) X = 1, Y = 0 (a) 2000 ohms (b) 4000 ohms
(d) X = 0, Y = 0 O (c) 8000 ohms (d) 6000 ohms
33. The combination of gates shown below produces 38. The relation between dynamic plate resistance (rp-
) of a vacuum diode and plate current in the
(a)
A AND
G1 gate
space charge limited region, is
(b) XOR gate Y
(a) rp  I p
3/ 2
G3 G4 (b) rp  I p
(c) NOR gate
B G2 1 1
(d) NAND gate (c) rp  (d) rp 
Ip (I p)1 / 3
34. The shows two NAND gates followed by a NOR
gate. The system is equivalent to the following 39. The relation between Ip and Vp for a triode is
logic gate I p  (0.125Vp  7.5) mA

A X Keeping the grid potential constant at 1V, the

(a) OR value of rp will be

(b) AND Z (a) 8 k (b) 4 k

B

(c) NAND (c) 2 k (d) 8 k

40. An alternating voltage of 141.4V (rms) is applied
(d) None of these C Y
to a vacuum diode as shown in the figure. The
 Electronics 52
maximum potential difference across the k then root mean square current flowing through
condenser will be RL  12k will be
(a) 100 V P (a) 1.27 mA (b) 10 mA

(b) 200 V (c) 1.5 mA (d) 12.4 mA

141.4
K F F 46. For a triode  = 64 and gm =1600  mho. It is used
(c) 100 2V ac (rms)
as an amplifier and an input signal of 1V (rms) is
C RL applied. The signal power in the load of 40 k will
(d) 200 2V be

41. A metallic surface with work function of 2 eV, on (a) 23.5 mW (b) 48.7 mW
heating to a temperature of 800 K gives an (c) 25.6 mW (d) None of these
emission current of 1 mA. If another metallic
surface having the same surface area, same 47. Amplification factor of a triode is 10. When the
emission constant but work function 4 eV is plate potential is 200 volt and grid potential is – 4
heated to a temperature of 1600 K, then the volt, then the plate current of 4mA is observed. If
emission current will be plate potential is changed to 160 volt and grid
potential is kept at – 7 volt, then the plate current
(a) 1 mA (b) 2 mA
will be
(c) 4 mA (d) None of these
(a) 1.69 mA (b) 3.95 mA
42. A change of 0.8 mA in the anode current of a
triode occurs when the anode potential is changed (c) 2.87 (d) 7.02 mA
by 10 V. If  = 8 for the triode, then what change 48. On applying a potential of – 1 volt at the grid of a
in the grid voltage would be required to produce a triode, the following relation between plate
change of 4 mA in the anode current
voltage Vp (volt) and plate current I p(in mA) is
(a) 6.25 V (b) 0.16 V
found
(c) 15.2 V (d) None of these
I p  0.125Vp  7.5
43. The plate current in a triode is given by
If on applying – 3 volt potential at grid and 300 V
I p  0.004(Vp  10Vg)3 / 2mA
potential at plate, the plate current is found to be
where Ip, Vp and Vg are the values of plate current, 5mA, then amplification factor of the triode is
plate voltage and grid voltage, respectively. What
(a) 100 (b) 50
are the triode parameters , rp and gm for the
(c) 30 (d) 20
operating point at Vp  120volt and
49. The slopes of anode and mutual characteristics of
Vg   2 volt ?
a triode are 0.02 mA V–1 and 1 mA V–1 respectively.
(a) 10, 16.7 k, 0.6 m mho (b)15, 16.7 k, 0.06 What is the amplification factor of the valve
[MP PMT 1990]
m mho
(a) 5 (b) 50
(c) 20, 6 k, 16.7 m mho (d) None of these
(c) 500 (d) 0.5
44. A triode whose mutual conductance is 2.5 m A/volt
and anode resistance is 20 kilo ohm, is used as an 50. The voltage gain of the following amplifier is
amplifier whose amplification is 10. The resistance [AIIMS 2005]
connected in plate circuit will be [MP PET 1989;
100k
RPMT 1998]

(a) 1 k (b) 5 k 1k

–
(c) 10 k (d) 20 k +
Vi Vo
45. In the grid circuit of a triode a signal 10k

E  2 2 cost is applied. If  = 14 and rp =10
 53 Electronics
(a) 10 (b) 100 (c) (d)
(c) 1000 (d) 9.9

Graphical Questions

1. The temperature (T) dependence of resistivity ()

of a semiconductor is represented by
[AIIMS 2004]
(a)  (b) 

O T O T
(c) (d)

 

2. In O T
a forward biased PN-junction
O diode, theT
potential barrier in the depletion region is of the
form … [KCET 2004]
V V

(a) (b)

p n p n

V V

(c) (d)

p n p n

3. Different voltages are applied across a P-N junction

and the currents are measured for each value.
Which of the following graphs is obtained between
voltage and current
[MP PET 1996; UPSEAT 2002]
I I
(a) (b)

– +V – +V
V V

I I

– – +V
+V
V V