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I. INTRODUCTION
Ultra-Wideband (UWB) is a wireless digital
communication system exchanging data using short duration
pulses. Low cost implementation of the UWB promises high
throughput at short distances without interfering with other
existing wireless communication system[1].
In our design, we have proposed a Low Noise Amplifier
(LNA) for a UWB receiver using IBM 90nm CMOS process.
LNA is the first block of the UWB receiver end. It amplifies
the transmitted signal received by the receiving antenna. We
have used CS-CS (Common Source-Common Source)
Cascode stage topology of LNA, as this topology offers
higher gain and bandwidth compared to other topologies of Fig. 1 Schematic of LNA
LNA implementation [2]. We have included differential
output in our design as it gives better immunity against noise Our design is a modified version of a previously
due to supply voltage variation[3]. proposed LNA circuit [4]. There was a current source
After system level analysis, the proposed circuit has been which is replaced by a current mirror circuit. This
simulated in circuit level. In the simulation stage, we have current mirror circuit exist between node 18 and ground .
focused on optimizing LNA parameters like gain, bandwidth, A high pass filter circuit is placed between node 18
center frequency, power consumption etc. From circuit level and node 19. This high pass filter circuit is due to the
simulation, the gain is found to be around 13dB with center elimination of DC offset voltage in the output
frequency of 18.3GHz. The bandwidth is around 5.2 GHz waveform. At the end, our output of the circuit is
which is about 28% of the centre frequency. This is a differential output. We get this differential output from
promising finding since UWB process requires the bandwidth node 20 and node 23.
to be at least 20% of the centre frequency. Besides the power
consumption of our circuit is around 70 microwatts which is III. SIMULATION RESULT
also a optimistic result in terms of power dissipation. For observing the simulation result we have used
In a word, despite being a circuit level simulated design, HSpice A-2008.03 software as a simulator of our circuit.
our design promises to bring out a highly effective LNA We have used rf_9 model of mosfet in our design. We
system through the process of further development. have seen result for different process corners of mosfet.
II. SCHEMATIC DESIGN
Schematic design for our LNA circuit is given
below :
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Power consumption of the circuit is 64.63133 From the frequency response curve, we get two -
microwatt. Now, it has been observed that power 3db frequency limit. They are 19.9 GHz and 14.2 GHz.
consumption of LNA circuit is changed when we are So . -3db bandwidth is (19.9-14.2)GHz or 5.7 GHz
using slow-slow corner. The value of power consumption 3 ) Power Consumption : Power consumption of the
is decreased when we change the process corner from circuit is 66.14786 microwatt. The value of power
fast-fast process corner to slow-slow process corner. consumption is increased when we change the process
D. Fast-Slow (FS) Corner corner from fast-slow process corner to slow-fast process
1) Gain Calculation : corner.
F. Result Comparison between Various Corner Simulation
We can compare the results for various corner
simulation having a glance in the following table.
TABLE I
COMPARISON BETWEEN DIFFERENT CORNER SIMULATION
[2] Choong-Yul Cha , Sang-Gug Lee, “A low power, high gain LNA
topology” , Microwave and Millimeter Wave Technology, 2000, 2nd
International Conference on. ICMMT 2000 p. 420-423
[3] Behzad Razavi Design of Analog CMOS Integrated Circuits . sixteen
reprint 2002 , Tata McGraw- Hill Edition 2002 .
Fig 10 Frequency Response at output (SS corner)
[4] Hangue PARK, Sungho LEE, Jaejun LEE , Sangwook NAM , “A 2.3-7
Gain at centre frequency = 20*log10(Vout/Vin) dB GHz CMOS High Gain LNA using CS-CS Cascode with Coupling C” IEICE
= 20*log10(719.9m/150m) dB TRANS. ELECTRON. ,VOL.E92-C, NO. 8 AUGUST 2009.
= 13.6248 dB
2 ) Bandwidth Calculation : For finding -3dB
bandwidth we have to find corresponding output
voltage due to gain of (13.6248-3) or 10.6248 dB.
Corresponding voltage is 509.71 millivolt.
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