1N4001W THRU 1N4007W

Surface Mount General Purpose Silicon Rectifiers

Reverse Voltage - 50 to 1000 V PINNING

Forward Current - 1 A PIN DESCRIPTION

1 Cathode
FEATURES 2 Anode
▪For surface mounted applications
▪Low profile package
1
▪Glass Passivated Chip Junction 2

▪Ideal for automated placement

Top View
▪Lead free in comply with EU RoHS 2011/65/EU directives Marking Code： A1-A7
Simplified outline SOD-123FL and symbol
MECHANICAL DATA
▪Case: SOD-123FL
▪Terminals: Solderable per MIL-STD-750, Method 2026
▪Approx. Weight: 15mg / 0.00053oz

Maximum Ratings and Electrical characteristics

Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.

Parameter Symbols 1N4001W 1N4002W 1N4003W 1N4004W 1N4005W 1N4006W 1N4007W Units

Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V

Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V

Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V

Maximum Average Forward Rectified Current

I F(AV) 1 A
at T c = 125 °C

Peak Forward Surge Current 8.3 ms Single Half

Sine Wave Superimposed on Rated Load
I FSM 30 A

Maximum Instantaneous Forward Voltage at 1 A VF 1.1 V

Maximum DC Reverse Current T a = 25 °C 5

IR μA
at Rated DC Blocking Voltage T a =125 °C 50

（1）
Typical Junction Capacitance Cj 11 pF

（2）
Typical Thermal Resistance RθJA 90 °C/W

Operating and Storage Temperature Range T j , T stg -55 ~ +150 °C

（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C

（2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.

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 1N4001W THRU 1N4007W

Fig.1 Forward Current Derating Curve Fig.2 Typical Instaneous Reverse

Characteristics
1.2 100

Instaneous Reverse Current ( μ A)

Average Forward Current (A)

T J=150°C
1.0
T J=125°C
10
0.8

0.6 1.0
T J=75°C

0.4
0.1
0.2
Single phase half-wave 60 Hz T J =25°C
resistive or inductive load 1N4007W
0.0 0.01
25 50 75 100 125 150 175 0 200 400 600 800

Case Temperature (°C) Instaneous Reverse Voltage (V)

Fig.3 Typical Forward Characteristic Fig.4 Typical Junction Capacitance

1.0 Junction Capacitance ( pF) 100

Instaneous Forward Current (A)

T J=25°C

0.5
0°C

C
0°C

10
2 5°
15

10

TJ =
TJ =

TJ =

0.2

0.1 1
0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 1.0 10 100

Instaneous Forward Voltage (V) Reverse Voltage (V)

Fig.5 Maximum Non-Repetitive Peak

Forward Surage Current
Peak Forward Surage Current (A)

35

30

25

20

15

10

05
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1 10 100

Number of Cycles

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 1N4001W THRU 1N4007W

PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-123FL

∠ALL ROUND ∠ALL ROUND

A
C

HE VM A E

D A g g

pad

pad
E

Top View Bottom View

UNIT A C D E e g HE ∠

max 1.1 0.20 2.9 1.9 1.1 0.9 3.8

mm
min 0.9 0.12 2.6 1.7 0.8 0.7 3.5
7°
max 43 7.9 114 75 43 35 150
mil
min 35 4.7 102 67 31 28 138

The recommended mounting pad size Marking

Type number Marking code

1.2 2.0 1.2 1N4001W A1
(47) (79) (47)
1N4002W A2

1N4003W A3

1N4004W A4
(47)
1.2

1N4005W A5

1N4006W A6
Unit： mm 1N4007W A7
(mil)

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0 Page 3 of 3