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Amplifiers

Measuring RF parameters in GSM/EDGE


power amplifiers
GSM/EDGE RF power amplifiers used in mobile communications in North
America, Europe and elsewhere must conform to a strict ETSI standard in order
to obtain type approval by the end user, the service provider and the public
in general. In this article, a method for conducting RF lab measurements is
presented using commercially available test equipment and following common
RF practices. Usually, this involves testing in four bands and two modes. It also
requires measuring the “Five Golden Parameters” (power vs. time, modulation
spectrum, transient spectrum, phase error and error vector magnitude.
By Antonio Eguizabal

G lobal system mobile (GSM) or enhanced


data rate for GSM evolution (EDGE)
modulated signal delivered by the mobile
������������� ���������

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station (MS) uses the random access channel ������������
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(RACH) link to initially communicate with ���������
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the base transceiver station (BTS). Once ����� ��� �������� �����
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the BTS to MS instructions are decoded via �� ���������
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the slow associated control channel (SACCH), ��� ������������
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the RF output power level in the MS is ����������������� ���
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dynamically set. The purpose is to provide ���������
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the minimum necessary output power[1], in ������
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such a way that the BTS receives signals ��������
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from many MS at approximately the same ����� �������
received signal strength (RSS). The end effect ����
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is that overall parameters such as talk time ���
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and standby time are vastly improved, with �������� �����
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minimum interference. Hence, it is paramount ���������
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that the RF power amplifier (PA) be tested �����������
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and evaluated at all required power levels. ���

High efficiency is accomplished by ������������


operating the amplifier in class D for GSM ��������
����� ���������
(non-linear mode) and class AB2 in EDGE ���������
(quasi-linear mode). ����������������
�����������������������

Methodology
The RF input and RF output of the ampli- ������������������������� ��������������������������
fier device mounted in a typical evaluation ����������������� ������
������� ����
PC board are connectorized with SMA-type ��������
miniature coaxial connectors. These are part ����������
��������� ��������
of the 50  impedance system together with ���������� ������������
��������� ������������������ ����������
the microstrip traces on the board. Hence, ��������
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����������
������� ���������
������������
it is important that all RF connections are ��������� ����� ���������
low-loss 50  coaxial type.
To minimize any source of error or uncer-
tainty during the measurement, it is impor- ���������������������������������
tant that the RF coaxial contacts are clean. ��������������������
������������������������
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Use laboratory-grade alcohol to remove any ������� ��������������� ��������� ��������������������
contaminant. Due to “skin effect,” most if ������������������ ������������������������������� ��������������������������� ���������
not all, of the RF current flows near the surface ������������������������������� ��������������������� ����������������
��������������� ����������������������
of the conductor.
A GSM/EDGE modulated signal from
a suitable generator is applied to the RF Figure 1. Typical laboratory bench test equipment line-up.

38 www.rfdesign.com October 2006


RF Design www.rfdesign.com 39
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Figure 2. The GMSK signal spectrum at full power, +33 dBm at 824 MHz (a). Phase error display of the same signal is shown in (b). Power vs. time repre-
sentation of the same signal in (c).
amplifier evaluation board via the bench
setup as shown in Figure 1. The RF output ������������������� ����������� ������������������� ���������������
under a 50  load is monitored via an RF ����������������������������������
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power meter, spectrum analyzer and an ����������������

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optional vector signal analyzer. ����
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The spectrum analyzer displays the trans- �


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mitted spectrum. Due to the pulsed nature
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of the GSM signal, it has two main com- ���
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ponents: the modulation and switching (or ���
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transient) spectrum. These two must be
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measured separately and carefully measured ���

following[3] and compared to[2] for a pass/fail ���

criteria. While the vector signal analyzer gives ���
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the value of the modulation quality in error ���������������� ���������

vector magnitude (EVM) and phase error. ��� ���


The transmitted EDGE spectrum contains ������������������ �����������
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additional energy due to AM/AM and AM/PM ��������������
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conversion by virtue of the quasi-linear class ����������������


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AB2 amplification (spectral re-growth). The ����


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figure of merit is usually adjacent-channel ��
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power ratio (ACPR), given in [dBc] at an ��
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offset frequency that corresponds to the first ���� ��
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RF adjacent and first RF alternate channels. �


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The RF PA is dc biased under typical ��� ���������


���������
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operating conditions as given in the data ���
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sheet for the particular device under test ���
� ���
(DUT). Typical values are: Vcc1 = Vcc2 = ���
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��
��
���
+3.5 Vdc; Vreg = +2.7 Vdc. ���
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���������������� �������� ������������

The minimum acceptable levels are given ��� ���


in references 2 and 3. Also, Table 1 provides
a summary of the relevant portions of the Figure 3. The EDGE signal spectrum at full power, +26 dBm at 1910 MHz, is shown in (a). Error vector
magnitude display of the EDGE signal as demodulated by the test equipment is displayed in (b).
ETSI standard and its application to GSM/ Power vs. time display of the same EDGE signal at 1910 MHz in (c). Transient or switching spectrum
EDGE RF PAs. of the EDGE modulated signal at +26 dBm is delineated in (d).

Test setup RF power meter and sensors be zeroed ed by the arbitrary function generator. In
A detailed block diagram is shown in and calibrated and set to the correct operat- order to maintain a bounded spectrum dur-
Figure 1. ing frequency before any measurements ing RF power increase or decrease, a gradual
The input section has: take place. change is required on Vramp. This is usu-
 RF digital signal generator; Then, a bench calibration is performed, ally implemented with a ¼ period sin2(x) or
 bandpass filter; to determine the input and output insertion sin3(x) function applied to the rising edge. In
 isolator; losses, entered as offsets into the power similar fashion a ¼ period cos2(x) or cos3(x)
 directional coupler; and meter. Hence, channel 1 (assigned to the input) is applied to the falling edge. In general, the
 RF power sensor. measures exactly the input RF power and cubic function will provide a gentler rise and
The output section has: channel 2 (assigned to the output) measures fall than the square function, however, the latter
 RF load attenuator; the output power. The gain of the device has a faster time response.
 directional coupler; in dB is determined immediately by taking A proper ramping profile can be generated
 RF power sensor; the difference of these readings in dBm. by considering the following:
 spectrum analyzer; and  The maximum amplitude (typically
 vector signal analyzer. Ramp control signal 2 V to 2.5 V).
It is important that the dual-channel The Vramp control signal is generat-  The pulse duration is 577 µs for one

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RF Design www.rfdesign.com 41
Parameters Typical RF PA No. 1 Typical RF PA No. 2 System Specifications ETSI Section
Bands 850; 900; 1800 & 1900 850; 900; 1800 & 1900 GSM; EGSM; DCS & PCS GSM05.05: § 2.0
MHz MHz
Power Class +33 dBm 850/900 +34.7 dBm 850/900 +33 dBm (class 4) GSM05.05: § 4.1.1
+30 dBm1800/1900 +32.4 dBm1800/1900 +30 dBm (class 1)
Power Levels Power control range is Power control range PL5 to PL19 for 850 & 900 GSM05.05: § 4.1.1
55 dB (Vramp 0.1 to is 55 dB (Vramp 0.1 to bands (in 4 Tables)
2.2 V) 2.2 V) PL0 to PL15 for 1800 & GSM11.10 Tables 13-2 &
1900 bands 13-3
Power vs. Time Not given Not given GMSK time mask for MS GSM05.05: Annex B
Modulation Spectrum Not given Not given -30 dBc @ ± 200 kHz GSM05.05: § 4.2.1
GMSK -60 dBc @ ± 400 kHz GSM05.05: Annex A
etc. GSM11.10: § 13.4
Switching Spectrum Not given Not given  -23 dBm @ ± 400 kHz GSM05.05: § 4.2.2
 -26 dBm @ ± 600 kHz GSM11.10: § 13.4
etc. Tables 13-9 & 13-10
Spurious Conducted -30 dBm LB & HB -13 dBm LB harm.  -36 dBm over range GSM05.05: § 4.3.3
harmonics -30 dBm HB harm. 9 kHz to 12.75 GHz GSM11.10: § 12.1
Spurious Radiated System and circuit design System and circuit design  -59 dBm worst case GSM05.05: § 4.3.3
dependent dependent 30 MHz to 12.75 GHz GSM11.10: § 12.2 and
Table 12.9
Modulation Accuracy Not given. Mostly system Not given. Mostly system Peak phase error  20 ° GSM05.05: § 4.6.1
GMSK and circuit dependent and circuit dependent rms phase error  5 ° GSM11.10: § 13.1
Modulation Spectrum  -33 dBc@ ±200 kHz  -33 dBc @ ± 200kHz  -30 dBc @ ± 200 kHz GSM05.05: § 4.2.1
EDGE  -57 dBc@ ±400 kHz  -57 dBc @ ± 400kHz  -54 dBc @ ± 400 kHz Tables a1; b1 and c1
 -63 dBc@ ±600 kHz  -63 dBc @ ± 600kHz  -60 dBc @ ± 600 kHz
Modulation Accuracy EVM  6% rms worst EVM  6% rms worst EVM  9% rms GSM05.05: § 4.6.2
EDGE case case  30% peak
Frequency Error N/A N/A  0.1 ppm GSM05.10: § 6.1
(i.e., 85 Hz @ 850 MHz) GSM11.10: § 13.1
Residual Output Power Po= -25 dBm max Po= -25 dBm max  -36 dBm or  -59 dBc GSM05.05: § 4.5.2
(Fwd Isol 2) Vramp = 0 (Fwd Isol 2) Vramp = 0 whichever is greater GSM11.10: Table 13-4
Table 1. GSM and EDGE minimum system parameters.

active slot (i.e., slot 0) and 12.5% duty cycle. A typical display of the frequency spectrum Bench calibration
 The repetition rate is 4615 µs or as obtained by the spectrum analyzer with No PA module is required, only the input
approximately 217 Hz. a GSM/EDGE personality is shown in Figure and output component sections. The input
 The rise and fall times of the pulse 2 (GMSK at 824 MHz) and Figure 3 (EDGE insertion loss is determined first, then the
are such, that they conform with Annex B in[2]. at 1910 MHz). output section loss. The first is entered as
 In general, more than one ramping profile Required test equipment includes: an offset in channel 1 of the RF power meter,
is required to satisfy[2] over RF power output,  RF digital signal generator GMSK and thus moving the measuring plane exactly at
battery voltage and temperature. EDGE modulation capable in the bands of the input of the PA. The second is entered
As a starting point, rise and fall times of interest; as an offset in channel 2 of the same meter,
the ramp can be approximated to those in  spectrum analyzer with GSM personality; thus moving the measuring plane exactly
annex B[2], that is approximately 14 µs to 16 µs  vector signal analyzer with GSM at the output of the PA.
and same time frame rate of 4615 µs. personality; Proceed as follows:
To communicate with the ArbFuncGen  printer for the above units, if required;  Isolate the input section.
a GPIB/IEEE 488.2 controller card (available,  RF power meter, dual channel with  Calibrate and zero both channels of the
for example, from National Instruments or sensors calibrated to the band of interest; RF power meter. Set to the desired frequency.
equivalent) and GPIB control software (such  arbitrary function generator, for Vramp  Set the RF signal generator to 0 dBm CW
as NI 488.2) installed in the PC is needed. generation; output connected to the input section.
Then install the waveform creation software  oscilloscope, four channels with 10x  Connect channel 1 power sensor to the
(such as Tektronix AXW-100 for model voltage probes and 1x current probes; coupled port at the directional coupler. Connect
AFG-310 function generator or an Agilent  directional couplers, 10 dB coupling channel 2 to the output of the input section.
34811A for model HP 33120A function genera- (input) and 20 dB coupling (output);  Measure the insertion loss in dB by
tor). Interconnecting GPIB cables are required  bandpass filter and isolator for the bands taking the difference in dBm between channel
between the computer and function generator. of interest; 2 and 1 readings.
In developing the Vramp profiles, it is  load attenuator 20 dB, 5 W;  Enter this value as a channel 1 offset in
useful to have an oscilloscope connected to  dc power supplies, regulated 0 to 5 Vdc, the RF power meter.
the output of the arbitrary function genera- 2 A output (two);  Confirm that both channel 1 and chan-
tor. Final verification can be made in the RF  DVM for accurate voltage measurements nel 2 measure exactly the same value. If not,
output power with a spectrum analyzer in the (two); and repeat the procedure.
zero-span (time domain) mode.  interconnecting RF and dc cables.  Isolate the output section.

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RF Design www.rfdesign.com 43
 Apply 0 dBm CW from the RF signal gen-
erator connected to the load attenuator input.
 Connect channel 2 power sensor to the
directional coupler main output.
 Load the coupled port with a 50 
termination.
 Measure the insertion loss in dB by
taking the difference between 0 dBm and
channel 2 reading.
 Enter this value as channel 2 offset in
the RF power meter.
 Confirm that the channel 2 reading is
0 dBm. If not, repeat procedure.

Conclusion
A method for measuring RF parameters in
mobile handset power amplifiers is presented
with a bench test equipment line-up and its
calibration method. A summary table contain-
ing the minimum standards set out by ETSI
for GMSK and EDGE modulation is given to
facilitate the user’s access and understanding
of the limiting values. Representative power
amplifier waveforms are shown from a typi-
cal RF power amplifier under test using the
methodology herein described. RFD

References:
1. US CFR Title 47, Part 24, § 24.232(c)
(“Mobile/portable stations are limited to 2 W
EIRP peak power and the equipmentmust em-
ploy means to limit the power to the minimum
necessary for successful communications.”)
See also US CFR 47, Part 24, §24.52 ”RF
Hazards.” These are FCC regulations from
www.fcc.gov.
2. ETSI TS 100 910 Digital Cellular
Telecommunication System-Radio Transmis-
sion and Reception-3GPP TS 05.05. Euro-
pean Telecommunications Standard Institute
(ETSI Sophia Antipolis France, available from
www.etsi.org).
3. ETSI GSM 11.10 Digital Cellular
Telecommunication System-Mobile Station
Conformance Specification. European Tele-
communications Standard Institute (ETSI
Sophia Antipolis France, available from
www.etsi.org.

ABOUT THE AUTHOR


Antonio L. Eguizabal is an applications
engineer with Freescale Semiconductor’s
RF Devices Division in Tempe, AZ. He
obtained his B.Sc. E.E. (Hons) at the
University of Santiago and his M.A.Sc at
the University of British Columbia, both
in Electrical Engineering specializing in
Electronics. He was awarded one patent in
2003 and has several years experience with
RF power amplifiers for mobile use. He can
be reached at a.eguizabal@freescale.com.

44 www.rfdesign.com October 2006

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