BJT AC Analysis

BJT Transistor Modeling

 A model is an equivalent circuit that represents the AC

characteristics of the transistor.
 A model uses circuit elements that approximate the
behavior of the transistor.
 There are two models commonly used in small signal AC
analysis of a transistor:
1) re model - any region of operation, fails to account for
output impedance, less accuracy

2) Hybrid equivalent model- limited to a particular

operating conditions, more accuracy
 re equivalent
Hybrid equivalent model model

Fig. 1: Model for AC analysis

 Two-port networks
• Circuits can be considered by theirs terminal variables
• Voltages and currents are terminal’s variables
• Complex circuit can be analyzed more easily.
• There are many kinds of two port parameters.

I1 I2
+ +
V1 Two port V2
- network -

Fig. 2: A two port network

 Fig. 3: A two port network

No inter-port connection
INTRODUCTION:TRANSISTOR MODELING

• To begin analyze of small-signal AC response of BJT

amplifier the knowledge of modeling the transistor is
important.
• The input signal will determine whether it’s a small
signal (AC) or large signal (DC) analysis.
• The goal when modeling small-signal behavior is to
make of a transistor that work for small-signal enough to
“keep things linear” (i.e.: not distort too much)
•There are two models commonly used in the small signal
analysis:
a) re model
b) hybrid equivalent model
 How does the amplification be done?
• Conservation; output power of a
system cannot be larger than its
input and the efficiency cannot
be greater than 1
• The input dc plays the important
role for the amplification to
contribute its level to the ac
domain where the conversion
will become as η=Po(ac)/Pi(dc)
Disadvantages

• Re model
• Fails to account the output impedance level of device and
feedback effect from output to input
• Hybrid equivalent model
• Limited to specified operating condition in order to obtain
accurate result
 VCC

R1 RC

C1
C2 +
RS + Vo
Vi R2 RE C3
VS - Voltage-divider configuration
- under AC analysis

R1 RC

Redraw the voltage-divider

+ configuration after removing dc
RS + Vo supply and insert s/c for the
Vi R2
capacitors
VS -
-
 Modeling of
BJT begin
HERE!

Ii Transistor small- Io
B signal ac C
R1 RC + equivalent cct
Zi +
E
RS Rc
+ Vi R1 R2
Zo Vo
RS + Vo
Vi R2
VS
- - -
VS
-

Redrawn for small-signal AC analysis

Fig. 6: circuit for AC analysis

 AC bias analysis :

1) Kill all DC sources

2) Coupling and Bypass capacitors are short cct.

The effect of there capacitors is to set a lower cut-off
frequency for the cct.

3) Inspect the cct (replace BJTs with its small signal

model:re or hybrid).

4) Solve for voltage and current transfer function,

i/o and o/p impedances.
 Vi Zi
re
 IMPORTANT PARAMETERS

• Input impedance, Zi
• Output impedance, Zo
• Voltage gain, Av
• Current gain, Ai

Input Impedance, Zi(few ohms  M)

The input impedance of an amplifier is the value as a
load when connecting a single source to the I/p of
terminal of the amplifier.
 Two port system-determine input impedance, Zi

Rsense
i
Vi
+
Ii
+ Zi 
VS Zi Vi Two-port Ii
- system
- Vs  Vi
Ii 
Determining Zi
Ri

• The input impedance of transistor can be approximately

determined using dc biasing because it does not simply
change when the magnitude of applied ac signal is change.
 Demonstrating the impact of Zi
Rsource

+ 600 Ω +
Zi
VS=10mV 1.2 k Ω
Vi Two-port
- system
-

Ideal source,Rsource  0Ω
Full 10mV applied to the system

With sourceimpedance,Rsource  600 Ω

ZiVs 1.2k (10 m)
Vi    6.6mV
Zi  Rsource 1.2k  600
Example 1: determine the level of input impedance

1k Ω

+ Rsense +
Zi
VS=2mV Two-port
Vi=1.2mV
- system
-

Solution:
Vs  Vi 2m  1.2m 0.8m
Ii     0.8A
Rsense 1k 1k

Vi 1.2m
Zi    1.5k
Ii 0.8
 Output Impedance, Zo (few ohms  2M)
The output impedance of an amplifier is determined at the output
terminals looking back into the system with the applied signal set
to zero.

Rsense
Rsource V  Vo
+
Io +
Io 
Vo V
Rsense
Vs=0V Two-port Zo
system -
-
Vo
Zo 
Determining Zo
Io
Iamplifier
IL

IRo For Ro  RL
Zo  RL  Zo become open cct
Zo=Ro
RL
IL  IRo
Example 2: determine the level of output impedance

Rsense

Two-port + 20 k Ω
system +
Zo
V=1 V
Vs=0V Vo=680mV -
-

Solution:
V  Vo 1  680 m 320 m
Io     16A
Rsense 20 k 20 k

Vo 680 m
Zo    42.5k
Io 16
Example 3: determine Zo if V=600 mV, Rsense=10 k and
Io=10 A
Rsense
Rsource
+
Io +
Vs=0V Two-port Vo V
Zo
system -
-

Solution
:
V  Vo
Io 
Rsense Vo 500 m
Zo    50 k
Vo  V  IoRsense Io 10
 600 m  10 10 k
 500 mV
Example 4: Using the Zo =50 kΩ obtained in example 3,
determine IL for the configuration of Fig below if
RL=2.2 k and Iamplifier=6 mA.

Solution :
Iamplifier
IL Current divider rule :
IRo Zo(Iamplifier)
IL 
Zo=Ro
RL
Zo  RL
50 k (6m)

50 k  2.2k
 5.747 mA
Voltage Gain, AV

• DC biasing operate the transistor as an amplifier.

Amplifier is a system that having the gain behavior.
• The amplifier can amplify current, voltage and power.
• It is the ratio of circuit’s output to circuit’s input.
• The small-signal AC voltage gain can be determined
by:

Vo
Av 
Vi
By referring the network below the analysis are:

no load
Rsource
Vo
+ + + AvNL  RL  Ω (open cct)
VS Zi
AvNL Vo
Vi
Vi
-
- -

with source resistance :

Determining the no load voltage gain
Vo
Avs 
Vs
 Example 5: For the BJT amplifier of fig. below,
determine: a)Vi b) Ii c) Zi d) Avs
Rs Solution:
+ Vo
+ 1.2 kΩ
Zi
+
BJT amplifier a) AvNL 
VS=40mV AvNL=320 Vo=7.68V
Vi
Vi Vo 7.68
-
- - Vi    24 mV
AvNL 320

Vs - Vi 40m  24m
b) Ii    13.33A
Rs 1.2k
Rs  Rsource

Vi 24m
c) Zi    1.8k
Ii 13.33

Zi 1.8k
d) Avs  AvNL  (320 )  192
Zi  Rs 1.8k  1.2k
 Current Gain, Ai

• This characteristic can be determined by:

Io
Ii

Vo
+
+
BJT
Io  
Zi
amplifier RL Vo
Vi

-
-
RL
Determining the loaded current gain

Io Vo / RL VoZi Zi
Ai    Ai   Av
Ii Vi / Zi ViRL RL
 re TRANSISTOR MODEL

• employs a diode and controlled current source to

duplicate the behavior of a transistor.
• BJT amplifiers are referred to as current-controlled
devices.

Common-Base Configuration

Common-base BJT transistor

re model
re equivalent cct.
 Ic Ie
E
C
26mV
re   IE is the DC lev el of
IE(dc)
B B

Common-base BJT transistor - pnp

emitter current

the input impedance, Zi = re

Ie Ic
e c
For the output impedance, it will be as
Ic  α Ie
follows;
b b Ie=0A Ic
re model for the pnp common-base e c
configuration

Vs=0V re Ic  0A
b b
Ie Ic
e c
isolation Determining Zo for common-base
re Ic  α Ie part,
b b Zi=re Zo  
common-base re equivalent cct
The common-base characteristics
 Ie BJT common-base
e transistor amplifier c Ic  α Ie Io
+
+
Vi re Zo   RL
Zi Vo
-
- b b

Defining Av=Vo/Vi for the common-base configuration

Vo  IoRL   Ic RL  IeRL

Vi  IeZi  Iere
Voltage gain,
Vo IeRL  RL
Av   Av  
RL
Vi Iere re re
 Ie BJT common-base
e transistor amplifier c Ic  α Ie Io
+
+
Vi re Zo   RL
Zi Vo
-
- b b

Defining Ai=Io/Ii for the common-base configuration

Io Ic Ie
Ai   
Ii Ie Ie

Current gain,
Ai    1
Example 6: For a common-base configuration in figure
below with IE=4mA, =0.98 and AC signal of 2mV is
applied between the base and emitter terminal:
a) Determine the Zi
b) b) Calculate Av if RL=0.56k
c) Find Zo and Ai
Ie Ic
e c

re Ic  α Ie
b b

common-base re equivalent cct

Solution:
26m 26 m
a) Zi  re    6.5
IE 4m

RL 0.98(0.56k)
b) Av    84.43
re 6.5

c) Zo  Ω
Io
Ai      0.98
Ii
Ii  Ie Ic
e c

re Ic  α Ie
b b

common-base re equivalent cct

Example 7: For a common-base configuration in previous
example with Ie=0.5mA, =0.98 and AC signal of 10mV is
applied, determine:
a) Zi b) Vo if RL=1.2k c) Av d)Ai e) Ib

Solution :
d) Ai    0.98
Vi 10m
a) Zi    20
Ie 0.5m e) Ib  Ie - Ic
 Ie - Ie
b) Vo  IcRL  IeRL
 0.5m(1   )
 0.98(0.5m)(1.2k)
 0.5m(1  0.98)
 588mV  10A
Vo 588 m
c) Av    58.8
Vi 10m
 Common-Emitter Configuration

Common-emitter BJT transistor

re model
re equivalent cct.
Still remain controlled-current source (conducted
between collector and base terminal)
Diode conducted between base and emitter terminal

Input Output
Base & Emitter terminal Collector & Emitter terminal
 c
C
Ic
Ic
Ic   Ib
Ib
b
Ib
B

E E
e e
common-emitter BJT transistor
re model npn common-emitter configuration
Vi
Zi  (1)
Ii
c
Vi  Vbe  I ere  I bre and
Ic

s ubt it ut e
int o( 1)gives Ic   Ib
Ii=Ib
b
Vbe  Ibre
Zi   + + Ie
Ib Ib Vi Vbe re

Zi   re -
e - e

Determining Zi using re equivalent model

Z i ranges bet w eenhundred t o6 ~ 7k
The output graph

36
 Output impedance Zo
Ii=Ib
b c

 Ib
re ro

e e
re model for the C-E transistor configuration

Ii=Ib = 0A
b c

Vs=0V Ib  0A
re ro Zo
e e

Zo  ro
if ro is ignored thus the
Zo  Ω (open cct, high impedance)
 Ii=Ib BJT common-emitter Io  Ic   Ib
transistor amplifier Io
e c
+
+
Vi re Zo   RL
Zi  re Vo
-
- b b

Determining voltage and current gain for the

common-emitter amplifier

Vo  IoRL  Ic RL  IbRL Current gain,

Vi  IiZi  Ibre Io Ic  Ib
Ai   
Ii Ib Ib
Voltage gain,
Vo IbRL
Ai  
Av  
Vi Ibre

RL
Av  
re
Example 8: Given =120 and IE(dc)=3.2mA for a common-
emitter configuration with ro=  , determine:

a) Zi b)Av if a load of 2 k is applied c) Ai with the 2 k load

Solution :
26m 26 m
a) re    8.125 
IE 3 .2 m
Zi  re  120 (8.125 )  975 

RL 2k
b)Av      246 .15
re 8.125

Io
c) Ai     120
Ii
Example 9: Using the npn common-emitter configuration,
determine the following if =80, IE(dc)=2 mA and ro=40 k

a) Zi b) Ai if RL =1.2k  c) Av if RL=1.2k 
Ii=Ib
b c Solution :
Io
26m 26 m
 Ib a) re    13
re ro RL IE 2m
Zi  re  80(13)  1.04 k
e
re model for the C-E transistor configuration
Solution (cont)
Io IL
b)Ai  
Ii Ib
ro( Ib)
IL 
ro  RL
ro(Ib)
ro  RL ro 40 k
Ai     (80)
Ib ro  RL 40 k  1.2k
 77.67

RL ro 1.2k 40 k
c)Av      89.6
re 13
Hybrid Equivalent Model

• re model is sensitive to the dc level of operation that result input

resistance vary with the dc operating point
• Hybrid model parameter are defined at an operating point that may
or may not reflect the actual operating point of the amplifier
 Hybrid Equivalent Model

The hybrid parameters: hie, hre, hfe, hoe are developed and used to model the transistor.
These parameters can be found in a specification sheet for a transistor.

43
Determination of parameter

Vi  h11Ii  h12 Vo
Vi
h11 
Ii Vo  0V

Vi
h12 
Vo Vo  0V

IO  h21Ii  h22 Vo
Solving Vo  0V ,
Ii
h21 
Io Vo  0V

Io
h22 
Vo Io  0A

H22 is a conductance! 44
 General h-Parameters for any
Transistor Configuration

hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)
hf = forward transfer current ratio (Io/Ii)
ho = output conductance
Common emitter hybrid equivalent circuit
Common base hybrid equivalent circuit
 Simplified General h-Parameter Model
The model can be simplified based on these approximations:

hr  0 therefore hrVo = 0 and ho   (high resistance on the output)

Simplified
 Common-Emitter re vs. h-Parameter Model

hie = re
hfe = 
hoe = 1/ro
Common-Emitter h-Parameters

hie  re [2]

h fe   ac [3]
 Common-Base re vs. h-Parameter Model

hib = re
hfb = -
Common-Base h-Parameters

hib  re [4]

h fb    1 [5]