The MJ15003 and MJ15004

ON Semiconductor
NPN
Complementary Silicon Power MJ15003 *
PNP
Transistors MJ15004 *
The MJ15003 and MJ15004 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear *ON Semiconductor Preferred Device
applications.
• High Safe Operating Area (100% Tested) — 20 AMPERE
POWER TRANSISTORS
250 W @ 50 V COMPLEMENTARY
• For Low Distortion Complementary Designs SILICON
• High DC Current Gain — 140 VOLTS
hFE = 25 (Min) @ IC = 5 Adc 250 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Rating Symbol Value Unit
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Collector–Emitter Voltage VCEO 140 Vdc
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Collector–Base Voltage VCBO 140 Vdc
CASE 1–07
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Emitter–Base Voltage VEBO 5 Vdc TO–204AA
(TO–3)
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Collector Current — Continuous IC 20 Adc
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Base Current — Continuous IB 5 Adc
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Emitter Current — Continuous IE 25 Adc
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Total Power Dissipation @ TC = 25C PD 250 Watts
Derate above 25C 1.43 W/C
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Operating and Storage Junction
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Temperature Range
TJ, Tstg –65 to +200 C
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Unit
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎ
ÎÎÎ
Maximum Lead Temperature for Soldering
RθJC
TL
0.70
265
C/W
C
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Purposes:
1/16″ from Case for 10 seconds
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

March, 2001 – Rev. 9 MJ15003/D
MJ15003 MJ15004
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ Characteristic Symbol Min Max Unit
ÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Emitter Sustaining Voltage (1) VCEO(sus) 140 — Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 200 mAdc, IB = 0)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current ICEX
µAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc) — 100
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) — 2 mAdc
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Collector Cutoff Current
ÎÎÎÎ
ÎÎÎ
(VCE = 140 Vdc, IB = 0)
ICEO — 250 µAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter Cutoff Current IEBO — 100 µAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VEB = 5 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
SECOND BREAKDOWN
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Second Breakdown Collector Current with Base Forward Baised IS/b Adc
(VCE = 50 Vdc, t = 1 s (non repetitive)) 5 —
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 100 Vdc, t = 1 s (non repetitive)) 1 —
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Current Gain hFE 25 150
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 5 Adc, VCE = 2 Vdc)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Emitter Saturation Voltage VCE(sat) — 1 Vdc
(IC = 5 Adc, IB = 0.5 Adc)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base Emitter On Voltage
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 5 Adc, VCE = 2 Vdc)
VBE(on) — 2 Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current Gain — Bandwidth Product fT 2 — MHz
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Output Capacitance cob — 1000 pF
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.
20 There are two limitations on the powerhandling ability of

15 TC = 25°C a transistor: average junction temperature and second
10
IC, COLLECTOR CURRENT (AMP)
breakdown. Safe operating area curves indicate IC – VCE

7
limits of the transistor that must be observed for reliable
5
operation; i.e., the transistor must not be subjected to greater
3 dissipation than the curves indicate.
2 TJ = 200°C The data of Figure 1 is based on TJ(pk) = 200C; TC is
BONDING WIRE LIMITED
variable depending on conditions. At high case
1 THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED temperatures, thermal limitations will reduce the power that
0.7
CURVES APPLY BELOW RATED VCEO can be handled to values less than the limitations imposed by
0.5
second breakdown.
0.3
0.2
2 3 5 7 10 20 30 50 70 100 150 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active–Region Safe Operating Area
http://onsemi.com
2
MJ15003 MJ15004
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
–T– SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO-204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U B --- 1.050 --- 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
http://onsemi.com
3
MJ15003 MJ15004
PowerBase is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION

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 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

20 There are two limitations on the powerhandling ability of

breakdown. Safe operating area curves indicate IC – VCE

PowerBase is a trademark of Semiconductor Components Industries, LLC.

PUBLICATION ORDERING INFORMATION

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