SemiWell Semiconductor STN1A60/80

Bi-Directional Triode Thyristor

Symbol
○ 3.T2
Features

◆ Repetitive Peak Off-State Voltage : 600/800V ▼▲

◆ R.M.S On-State Current ( IT(RMS)= 1 A ) ○ 2.Gate
◆ High Commutation dv/dt 1.T1 ○

TO-92
General Description

This device is suitable for low power AC switching applica-

tion, phase control application such as fan speed and tem-
perature modulation control, lighting control and static
switching relay. 1
2
3

Absolute Maximum Ratings ( TJ = 25°C unless otherwise specifed )

Symbol Parameter Condition Ratings Units

VDRM Repetitive Peak Off-State Voltage 600 800 V

IT(RMS) R.M.S On-State Current TC = 58 °C 1.0 A

One Cycle, 50Hz/60Hz, Peak,

ITSM Surge On-State Current 9.1/10 A
Non-Repetitive

I2t I2t 0.41 A2s

PGM Peak Gate Power Dissipation 1.0 W

PG(AV) Average Gate Power Dissipation 0.1 W

IGM Peak Gate Current 0.5 A

VGM Peak Gate Voltage 6.0 V

TJ Operating Junction Temperature - 40 ~ 125 °C

TSTG Storage Temperature - 40 ~ 150 °C

Mass 0.2 g

Apr, 2003. Rev. 3 1/6

copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
STN1A60/80

Electrical Characteristics
Ratings
Symbol Items Conditions Unit
Min. Typ. Max.

VD = VDRM, Single Phase, Half

Repetitive Peak Off-State
IDRM Wave - - 0.5 mA
Current
TJ = 125 °C

VTM Peak On-State Voltage IT = 1.5 A, Inst. Measurement - - 1.6 V

I+GT1 I - - 5

I -GT1 II - - 5
Gate Trigger Current VD = 6 V, RL=10 Ω mA
I -GT3 III - - 5

I+GT3 IV - 7 12

V+GT1 I - - 1.8

V-GT1 II - - 1.8
Gate Trigger Voltage VD = 6 V, RL=10 Ω V
V-GT3 III - - 1.8

V+GT3 IV - - 2.0

VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 - - V

Critical Rate of Rise Off- TJ = 125 °C, [di/dt]c = -0.5 A/ms,

(dv/dt)c State 2.0 - - V/㎲
VD=2/3 VDRM
Voltage at Commutation

IH Holding Current - 4.0 - mA

Rth(j-c) Thermal Resistance Junction to case - - 50 °C/W

Rth(j-a) Thermal Resistance Junction to Ambient - - 120 °C/W

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 STN1A60/80

Fig 1. Gate Characteristics Fig 2. On-State Voltage

1
10

1
10
VGM (6V)

PGM (1W) o
TJ = 125 C

On-State Current [A]

Gate Voltage [V]

25 ℃ PG(AV) (0.1W)
+ 0
I 10
0
25 ℃ GT3
10

IGM (0.5A)
+
I GT1
_ o
I GT1 TJ = 25 C
_
I GT3

VGD(0.2V)
-1 -1
10 10
10
0 1
10 10
2
10
3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Gate Current [mA] On-State Voltage [V]

Fig 3. On State Current vs. Fig 4. On State Current vs.

Maximum Power Dissipation Allowable Case Temperature
1.5 130
Allowable Case Temperature [ oC]

o
θ = 180o 120
π θ θ = 150
2π
1.2 o
Power Dissipation [W]

θ θ = 120 110
o
θ = 90 100
360°
0.9 o
θ = 60
θ : Conduction Angle 90 o
o θ = 30
θ = 30 θ o
80 π 2π θ = 60
0.6 o
70 θ θ = 90
o
θ = 120o
0.3 60 360° θ = 150
o
θ : Conduction Angle θ = 180
50

0.0 40
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2
RMS On-State Current [A] RMS On-State Current [A]

Fig 5. Surge On-State Current Rating Fig 6. Gate Trigger Voltage vs.
( Non-Repetitive ) Junction Temperature
12 10

10
Surge On-State Current [A]

+
V GT1
8 60Hz V
_
GT1
VGT (25 C)

+
V
VGT (t C)
o

GT3
o

6 1 _
V GT3

50Hz
4

0.1
0 -50 0 50 100 150
0 1 2
10 10 10
o
Time (cycles) Junction Temperature [ C]

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 STN1A60/80

Fig 7. Gate Trigger Current vs. Fig 8. Transient Thermal Impedance

Junction Temperature
10 1000

Transient Thermal Impedance [ C/W]

Rθ (J-A)

o
+
I GT1 100
_
I
IGT (25 C)
IGT (t oC)

GT1
o

_
I
1 GT3 Rθ (J-C)

10

+
I GT3

0.1 1
-2 -1 0 1 2 3
-50 0 50 100 150 10 10 10 10 10 10
o
Junction Temperature [ C] Time (sec)

Fig 9. Gate Trigger Characteristics Test Circuit

10Ω 10Ω 10Ω 10Ω

▼▲ ▼▲ ▼▲ ▼▲
● A ● A ● A ● A
6V 6V 6V 6V
RG RG RG RG
V V V V

● ● ● ●

Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ Test Procedure Ⅳ

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 STN1A60/80
TO-92 Package Dimension

mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.

A 4.2 0.165

B 3.7 0.146

C 4.43 4.83 0.174 0.190

D 14.07 14.87 0.554 0.585

E 0.4 0.016

F 4.43 4.83 0.174 0.190

G 0.45 0.017

H 2.54 0.100

I 2.54 0.100

J 0.33 0.48 0.013 0.019

A
E

1
D 2
1. T1
3
2. Gate
3. T2

H J
I

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STN1A60/80
TO-92 Package Dimension, Forming

mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.
A 4.2 0.165
B 3.7 0.146
C 4.43 4.83 0.174 0.190
D 14.07 14.87 0.554 0.585
E 0.4 0.016
F 4.43 4.83 0.174 0.190
G 0.45 0.017
H 2.54 0.100
I 2.54 0.100
J 0.33 0.48 0.013 0.019
K 4.5 5.5 0.177 0.216
L 7.8 8.2 0.295 0.323
M 1.8 2.2 0.070 0.086
N 1.3 1.7 0.051 0.067

A
E

C N

M
G

1
D L
2 1. T1
3 2. Gate
3. T2

K
H I J

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